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High Temperature Wafer Probing of Power Devices Masatomo Takahashi ACCRETECH Georg Franz T.I.P.S Messtechnik GmbH
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High Temperature Wafer Probing of Power Devices...Power Devices - Applications ... ABB. PowerDevices – Wide Band Gap ... It is mostly related to air pressure value, not to test time

Jul 18, 2020

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  • High Temperature Wafer Probing of Power Devices

    Masatomo TakahashiACCRETECH

    Georg FranzT.I.P.S Messtechnik GmbH

  • OverviewGeorg Franz

    1. Introduction to Power Devices2. Testing Requirements3. Probe Card SolutionMasatomo Takahashi

    4. Prober Chuck Improvement5. Experiment: Chuck Thermal Stability6. Conclusion, Follow-On Work

    2Takahashi, Franz

  • Power Devices - Applications• Power supplies• Air Condition• Electric Vehicles• Industrial Automation• Trains, Wind Turbines,

    Photovoltaic• Power Transmission

    3Takahashi, Franz

    image source: Tsunenobu Kimoto, Japanese Journal of Applied Physics 54, 040103, 2015

  • Power Devices - Applications in HEV/EV• Rectifiers

    Grid AC -> DC charger

    • InvertersDC 800V -> AC motor winding

    • ConvertersDC 24V -> HV busGenerator -> HV bus

    4Takahashi, Franz

    image source: ST Microelectronics

  • Power Devices - Types• Si-based devices:– PIN, SBD– IGBT– GTO

    • SiC/GaN-based devices:– MOSFET– BJT– JFET

    5Takahashi, Franz

    image source: Littelfuse

    image source: ABB

  • PowerDevices – Wide Band Gap• Silicon Carbide• Gallium Nitride

    • Smaller Devices• Higher Efficiency• Less Cooling Effort

    • Higher Operating Voltage!• Higher Operating Temperature!

    6Takahashi, Franz

    image source: ST Microelectronics

  • Test Requirements - Overview• Reverse Voltage (Breakdown Voltage)

    -> Up to several kV

    • Reverse Voltage (Leakage Current)• Forward Current (On-state resistance)

    -> Up to several kA

    • UIS – Unclamped Inductive Switching (max power dissipation)

    -> Up to several kA / kV

    7Takahashi, Franz

    image source: Wolfspeed,

    SiC-MOSFET

    image source: ABB, 6.5kV-

    600A Si-IGBT

  • Wafer Test• Current test applications:

    – Bare Die– Engineering/Characterization

    • Potential test applications:– Tri-Temp Automotive– Move from package to wafer test– Reduce test cost by 50%

    8Takahashi, Franz

    $

  • High Voltage Wafer Test• Vertical Device• Wafer Bulk on HV• Flash-over risk to

    dicing frame!

    9Takahashi, Franz

    C

    E G E G

    Floating (HV) GND

    HV

    6 kVDUT2 DUT1

    Example: Vertical Device, IGBT (Insulated Gate Bipolar Transistor)

  • Flash-Over SuppressionApproaches:

    10Takahashi, Franz

    Liquid Inert Gas high breakdown

    strength possible

    immersion necessary

    not useful for wafer test

    flushing prober at ambient pressure

    pure SF : 3-fold breakdown strengthof ambient air

    high cost, greenhouse gas

    Pressure linear increase of

    breakdown voltage with pressure

    works with any gas

    compressed air

  • Flash-Over Suppression - Solution• Air under higher pressure (Paschen)

    – whole prober under pressure– whole wafer under pressure– chip-scale chamber– contactless chip-scale chamber

    11Takahashi, Franz

    C

    E G E G

    Floating (HV) GND

    HV

    6 kVDUT2 DUT1

  • Contactless chip scale pressure chamber

    12Takahashi, Franz

  • Contactless Seal Operation

    13Takahashi, Franz

  • HV-HT Probe Card• Hot compressed

    air supply• Dual hot-cold

    air streamto protect probe card

    14Takahashi, Franz

    hot compressed air inlet

    hot chuck

    probe needles

    wafer

    pressure chamber

    gap

    PCB moveable Lupo seal ring

    cold air flow

    hot airflow

    150°C

    150°C

    25°C

  • High Voltage – High Temperature• Hot air has lower density

    -> reduced breakdown strength • Pressure must be increased

    to get same breakdown strength• At 125°C -> 36% higher

    pressure needed!

    15Takahashi, Franz

    50%

    60%

    70%

    80%

    90%

    100%

    25 75 125 175 225Temperature [°C]

    Relative Breakdown Strength

  • HV-HT Probe Card• production wafer sort• hot wafer chuck 150°C• hot compressed air 150°C• non-contact Lupo seal

    16Takahashi, Franz

  • High Temperature Pressurized Air Supply• Electrical heater• Heats cold compressed air to 150°C• closed-loop temperature control• temperature sensor in probe card• fast settling, stable operation• integrated air cooling for probe card

    17Takahashi, Franz

  • High temperature testConventional high temperature test condition.

    18Takahashi, Franz

    Chuck Top

    Wafer

    Blow ambient air

    Heater & Temp. Sensor(High temp.)

    Probe Card

    Chuck (wafer) temperature goes down !

  • Current issue and improvements

    19Takahashi, Franz

    105

    110

    115

    120

    125

    130

    135

    140

    145

    150

    155

    0 500 1000 1500 2000 2500 3000 3500 4000

    Chuc

    k te

    mp(

    deg)

    Time(sec)

    Condition: set temp.=150℃/0.5MPa/Die size=2.5㎜/Test time=1000msAir blow start

    Probing

    Waiting temp. stability

    Stronger heater with some sensors

    Original heater witha sensor

    Original heater with some sensors

  • High temperature test with Hot air controller

    20Takahashi, Franz

    Prober:UF2000

    Hot air controller: LMH150

    Probe card: ACTP001-HT

  • High temperature test enhancementBlow hot air into probe card instead ambient air.

    21Takahashi, Franz

    Chuck Top

    Wafer

    Blow hot air

    Heater & Temp. Sensor(High temp.)

    Probe Card

    better Temperaturestability

  • Experiments• Temp. test-1 :

    – Chuck temperature stability time after hot air blow start.

    • Temp. test-2 : – Chuck temperature variation during probing.

    by changing compressed air pressure, Die size, Testing time, etc.

    • Flash-over spark test : – With compressed hot air & T.I.P.S. HV demo wafer.

    22Takahashi, Franz

  • Temp. test-1– Chuck temperature stability time after air blow start.– Result: Return to chuck set temperature (150℃) within 3min using LMH150

    23Takahashi, Franz

    135

    137

    139

    141

    143

    145

    147

    149

    151

    153

    155

    0 200 400 600 800 1000 1200Time(sec)

    Chuck temperature after air blow

    A:High temp air blow Room temp air brow

    Air blow start(0.5Mpa)

    Approx. 3minStandard probe card (ACTP001) with room temp. air blow.

    ACTP001-HT with hot air blow.

  • Temp. test-2– Chuck temp. during probing with different conditions

    24Takahashi, Franz

    Chuck Temp.(℃)

    Pressure(MPa) Chip size(㎜)

    Test time(msec)

    100 0.3 5.0 300

    100 0.5 5.0 1000

    150 0.3 5.0 300

    150 0.5 5.0 300

    150 0.5 5.0 1000

    150 0.5 2.5 1000

  • Temp. test-2– Chuck temp. variation during probing-1– Condition: Set temp.=100℃/0.3MPa/Die size=5㎜/Test time=300ms– Result: Chuck temp. is very stable. (Set temp. ±1℃ during probing)

    25Takahashi, Franz

    85

    87

    89

    91

    93

    95

    97

    99

    101

    103

    105

    0 200 400 600 800 1000 1200 1400 1600Time(sec)

    Chuck temperature during probing

    Room temp air brow High temp air blow

    Air blow start

    Waiting temp. stability Probing

  • 85

    87

    89

    91

    93

    95

    97

    99

    101

    103

    105

    0 500 1000 1500 2000 2500Tim(sec)

    Chuck temperature during probing

    Room temp air blow High temp air blow

    Temp. test-2– Chuck temp. variation during probing-2– Condition: Set temp.=100℃/0.5MPa/Die size=5㎜/Test time=1000ms– Result: Chuck temp. is very stable. (Set temp. ±1℃ during probing)

    26Takahashi, Franz

    Waiting temp. stability Probing

    Air blow start

  • Temp. test-2– Chuck temp. variation during probing-3– Condition: Set temp.=150℃/0.3MPa/Die size=5㎜/Test time=300ms– Result: Chuck temp. is very stable. (Set temp. ±1℃ during probing)

    27Takahashi, Franz

    135

    137

    139

    141

    143

    145

    147

    149

    151

    153

    155

    0 200 400 600 800 1000 1200 1400 1600Time(sec)

    Chuck temperature during probing

    Room temp air blow High temp air blow

    Air blow start

    Waiting temp. stability Probing

  • Temp. test-2– Chuck temp. variation during probing-4– Condition: Set temp.=150℃/0.5MPa/Die size=5㎜/Test time=300ms– Result: Chuck temp. is very stable. (Set temp. ±1℃ during probing)

    28Takahashi, Franz

    135

    137

    139

    141

    143

    145

    147

    149

    151

    153

    155

    0 200 400 600 800 1000 1200 1400 1600

    Time(sec)

    Chuck temperature during probing

    Room temp air blow High temp air blow

    Air blow start

    Waiting temp. stability Probing

  • Temp. test-2– Chuck temp. variation during probing-5– Condition: Set temp.=150℃/0.5MPa/Die size=5㎜/Test time=1000ms– Result: Chuck temp. is very stable. (Set temp. ±1℃ during probing)

    29Takahashi, Franz

    135

    137

    139

    141

    143

    145

    147

    149

    151

    153

    155

    0 500 1000 1500 2000 2500

    Chuck temperature during probing

    Room temp air blow High temp air blow

    Air blow start

    Waiting temp. stability Probing

  • Temp. test-2– Chuck temp. variation during probing-6– Condition: Set temp.=150℃/0.5MPa/Die size=2.5㎜/Test time=1000ms– Result: Chuck temp. is very stable. (Set temp. ±1℃ during probing)

    30Takahashi, Franz

    135

    137

    139

    141

    143

    145

    147

    149

    151

    153

    155

    0 1000 2000 3000 4000 5000 6000 7000

    Chuck temperature during probing

    Room temp air blow High tep air blow

    Probing

    Waiting temp stability

    Air blow start

  • Temp. test-2– Chuck temp. during probing – Test result summary

    • Summary:– When using standard probe card with ambient air at 150 ℃, the variation of chuck temp. is +5 to -14℃

    max. It is mostly related to air pressure value, not to test time and die size. If using LMH150 with ACTP001-HC, the variation is +/-1℃ under all above conditions.

    31Takahashi, Franz

    Chuck Temp.(℃)

    Pressure(Mpa) Chip size(㎜)

    Test time(ms) Result

    100 0.3 5.0 300 +/-1℃100 0.5 5.0 1000 +/-1℃150 0.3 5.0 300 +/-1℃150 0.5 5.0 300 +/-1℃150 0.5 5.0 1000 +/-1℃150 0.5 2.5 1000 +/-1℃

  • Flash-Over Spark TestHigh voltage at 100°C

    If the test area temp. (inside of Lupo-Ring) is going up, the flash-over voltage is dropped. In case of ACTP001 with ambient air even if chuck temp. is 100℃, the test area temp. must be lower. So the flash-over voltage is just a little bit dropped.

    32Takahashi, Franz

    1

    1,5

    2

    2,5

    3

    3,5

    0 0,1 0,2 0,3 0,4 0,5 0,6

    Flas

    h-ov

    er V

    olta

    ge (k

    V)

    Compress Air (MPa)

    Flash-over voltage comparison

    Drop flash-over voltage approx. 25 %.

    Chuck=AmbientCard=ACTP001Air=Ambient

    Chuck=100℃Card=ACTP001Air=Ambient

    Chuck=100℃Card=ACTP001-HTAir=100℃

    Graph1

    0.30.30.3

    0.40.40.4

    0.50.50.5

    ambient

    100℃

    100℃(高温カード)

    Compress Air (MPa)

    Flash-over Voltage (kV)

    Flash-over voltage comparison

    2.56

    2.44

    1.92

    2.96

    2.82

    2.16

    3.32

    3

    2.34

    Sheet1

    再現が少し悪い サイゲンスコワル

    120-137121-137122-137123-137124-137120-137121-137122-137123-137124-137125-137126-137127-137128-137129-137

    201808151回目 カイメ0.53.43.333.13.10.222.42.12.12.12.22.32.62.62.7

    0.43.22.82.933.10.32.72.42.52.22.72.32.52.52.12.1

    0.32.52.82.22.42.70.42.832.833.12.62.832.82.6

    0.22.12.42.22.32.40.53.53.43.13.33.23.13.13.33.13

    2回目 カイメ0.53.23.33.13.22.90.22.12.42.322.52.222.222

    0.42.82.92.92.63.10.32.22.42.72.62.62.42.42.42.32.7

    0.32.32.32.32.72.70.43.23.12.92.92.62.92.832.62.9

    0.22.22.322.42.20.53.43.33.33.23.23.33.13.33.33.3

    500uA

    2.2

    ウェーハ再クリーニング サイ2.5

    20180816120-137121-137122-137123-137124-1373.2

    1回目 カイメ222.52.12.22.33.4

    0.32.52.62.32.32.7

    0.432.92.82.92.6

    0.53.33.33.23.13.2

    2回目 カイメ0.22.12.52.12.22.4

    0.32.52.82.52.62.6

    0.42.63.232.82.9

    0.53.53.43.23.23.2

    20180816120-137121-137122-137123-137124-137AVE

    28℃1回目 カイメ0.32.42.62.72.42.72.56

    0.42.82.93.12.93.12.96

    0.53.43.53.13.13.53.32

    2回目 カイメ0.32.72.92.62.42.5

    0.42.932.83.13

    0.53.43.43.43.43.5

    20180816120-137121-137122-137123-137124-137

    100℃1回目 カイメ0.32.32.72.12.62.52.44

    0.43.12.82.82.92.52.82

    0.53.2332.92.93

    2回目 カイメ0.3

    0.4

    0.5

    20180817120-137121-137122-137123-137124-137

    100℃1回目 カイメ0.32.52.32.12.62.3

    42%0.42.92.92.72.82.5

    0.53.33333.1

    2回目 カイメ0.32.12.42.52.32.6

    0.42.832.52.52.9

    0.53.43.12.933

    20180817120-137121-137122-137123-137124-137

    150℃1回目 カイメ0.3

    42%0.4

    0.5

    2回目 カイメ0.3

    0.4

    0.5

    20180817120-137121-137122-137123-137124-137

    室温(再) シツオンサイ1回目 カイメ0.32.62.72.62.52.72.62

    劣化確認 レッカカクニン0.42.92.62.92.932.86

    40%0.53.43.63.13.23.43.34

    2回目 カイメ0.32.52.52.62.72.8

    0.4333.13.23.3

    0.53.53.53.43.43.7

    高温カード コウオン

    20180820120-137121-137122-137123-137124-137

    100℃1回目 カイメ0.321.91.91.91.91.92

    0.42.222.12.22.32.16

    0.52.32.32.42.32.42.34

    2回目 カイメ0.3221.91.91.9

    0.42.32.12.22.22.3

    0.52.72.42.52.42.5

    温度上昇後、厚さ合わせ出来ず。セラミックの反り?

    Sheet1

    室温(従来カード)

    100℃(従来カード)

    100℃(高温カード)

    気圧(MPa)

    スパーク電圧(KV)

    高温でのスパーク電圧比較

    Sheet2

    Sheet3

  • Flash-Over Spark TestHigh voltage at 100°C

    33Takahashi, Franz

    Test wafer Check flash-over by camera & monitor.

  • Conclusion & Follow-On WorkConclusion

    – Proven Solution for High-Temperature High- Voltage Wafer Test– Achieved the improvement by chuck design change and using hot air

    controller.

    Follow-On Work– More field test– Integrate hot air controller into prober– Extend Temperature Range

    34Takahashi, Franz

  • Thank you for your attention!

    35Takahashi, Franz

    For questions, please contact:

    Masatomo Takahashi

    ACCRETECH

    [email protected]

    +81 426 42 0381

    For questions, please contact:

    Georg FRANZ

    T.I.P.S. Messtechnik GmbH

    [email protected]

    +43 4242 319 720 19

    High Temperature Wafer Probing of Power DevicesOverviewPower Devices - ApplicationsPower Devices - Applications in HEV/EVPower Devices - TypesPowerDevices – Wide Band GapTest Requirements - OverviewWafer TestHigh Voltage Wafer TestFlash-Over SuppressionFlash-Over Suppression - SolutionContactless chip scale pressure chamberContactless Seal OperationHV-HT Probe CardHigh Voltage – High TemperatureHV-HT Probe CardHigh Temperature Pressurized Air SupplyHigh temperature testCurrent issue and improvementsHigh temperature test with Hot air controllerHigh temperature test enhancementExperimentsTemp. test-1Temp. test-2Temp. test-2Temp. test-2Temp. test-2Temp. test-2Temp. test-2Temp. test-2Temp. test-2Flash-Over Spark TestFlash-Over Spark TestConclusion & Follow-On WorkThank you for your attention!