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High Power Semiconductors Best-in-class products to meet your application demands www.infineon.com/highpower
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High Power Semiconductors | Infineon Technologies

Jan 19, 2015

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Page 1: High Power Semiconductors | Infineon Technologies

High Power Semiconductors Best-in-class products to meet your application demands

www.infineon.com/highpower

Page 2: High Power Semiconductors | Infineon Technologies

High power semiconductors for your industrial applications

What sets our products apart is based on a deep understanding of our customer’s current and future applications needs. The core values of quality, reliability, longevity and innovation are an essential part of any new development and product improvement. This applies to our chip design, as well as our module development and manufacturing.

Accordingly, we offer a broad portfolio of power semiconductor products for industrial applications in the power range from 50 W up to several MW. The applications range from traditional industrial drives and complete systems for renewable energies (wind and solar), transportation (traction, construction and utility vehicles), power supplies, welding applications, to medical equipment and Major Home Appliances.

With this brochure, we offer an overview of our product range.

Page 3: High Power Semiconductors | Infineon Technologies

EasyPIM™, EasyPACKThe easy way with compact modules

EconoPIM™, EconoPACK™Trendsetting in case design and IGBT technology

Product range n 600 V, 6 A – 200 A

n 1 200 V, 10 A – 150 A

Circuit design n Bridge rectifier

n PIM

n fourpack, sixpack

n Dual, halfbridge

n 3-level one phase

n Solar 1~

n Solar 3~ and booster

module

Applications n Air-conditioning

n Household appliances

n General purpose drives

from 150 W up to 30 kW

n Pumps, fans

n Uninterruptible power

supplies

n Renewable energy systems

Features n Compact module concept

n High reliability and power

density

n PressFIT technology

available

n Configuration flexiblity

n High quality and reliability

n Modules without base

plates

n Latest IGBT4 1200 V chip

technology with Tjop of

150 °C

n IGBT3 600 V with Tjop of

150 °C

n Highly automated produc-

tion line

n RoHS compliant

n available with SiC

Product range n 600 V, 30 A – 200 A

n 650 V, 50 A – 200 A

n 1 200 V, 15 A – 200 A

n 1 700 V, 50 A – 150 A

Circuit designn PIM

n fourpack, sixpack

n tripack

n 12pack

n sixpack active front-end

Applications

n Variable speed drives

n Uninterruptible Power

Supplies

n Welding applications

n Inductive heating

n Renewable energy systems

Features

n Modules with copper base

plate

n Optimized heat spreading

n Included thermistor (NTC)

n High reliability and power

density

n New mounting technology

PressFIT for EconoPACK™

and EconoPIM™ modules

n IGBT4 650 V / 1200 V /

1700 V with Tvjop of 150 °C

and 10 μs short circuit

robustness

Page 4: High Power Semiconductors | Infineon Technologies

34 mm, 62 mm, EconoPACK™ 4, EconoPACK™ +, EconoDUAL™ modulesThe most competitive line of IGBTs from the expert

IGBT high current modules IHM, PrimePACK™The best in class solution for high power applications

Product rangen 34 mm / 62 mm modules

600 V, 50 A – 400 A 650 V, 300 A – 400 A 1 200 V, 50 A – 900 A 1 700 V, 50 A – 600 A

n EconoPACK™ 4 650 V, 100 A – 400 A 1 200 V, 100 A – 400 A 1700V, 100 A – 150 A

n EconoPACK™ + 1 200 V, 150 A – 600 A 1 700 V, 150 A – 500 A

n EconoDUAL™ 3 600 V, 300 A – 600 A 650 V, 300 A – 600 A 1200 V, 100 A – 600 A 1 700 V, 100 A – 600 A

Circuit designn 34 mm / 62 mm modules

n Single and Half bridge n Chopper modules n Diode modules n Single switch with series

diode

n EconoPACK™ 4, EconoPACK™ +, EconoDUAL™ n sixpack n dual modules n fourpack n chopper modules

n 3-level one phase

Applications n Variable speed drives n Uninterruptible power

suppliesn Resonant converters n Welding applicationsn Renewable energy systemsn Inductive heatingn Commercial cooking

Features n High reliability n Full product range in

various configurationsn State-of-the-art IGBT4 chip

technology for maximum power density and best parallel switching performance

n Symmetrical module design for best switching performance

n RoHS-compliant

Product rangen IHM

1 200 V, 600 A – 3 600 A

1 700 V, 400 A – 3 600 A

n PrimePACK™

1 200 V, 450 A – 1 400 A

1 700 V, 450 A – 1 400 A

Circuit designn Single

n Dual

n Half bridge

n Chopper modules

n Diode modules

Applications

n Variable speed drives

n Commuter trains

n Tramways and trolleybuses

n Welding applications

n Medical

n Uninterruptible power

supplies

n Renewable energy systems

n Inductive heating

Features

n High power density for

compact converter designs

n Modules setting a world

standard in their class

n Broad range of products

n Increased creepage and

clearance for use in rough

environments

n Robust module design

n Good saturation and

switching characteristics

with wide RBSOA

n Latest IGBT4 chip technology

Page 5: High Power Semiconductors | Infineon Technologies

IGBT high voltage modules IHVDevices for traction and high power industrial drives

Bridge rectifiers and AC controllers, EasyBRIDGE, eupec™ EconoBRIDGE™, eupec™ IsoPACK™... for a more compact converter design

Product range n 3300 V, 200 A – 1500 A

n 4500 V, 400 A – 1200 A

n 6500 V, 250 A – 750 A

Circuit design n Single

n Dual

n Chopper modules

n Diode modules

Applications n Industrial drives for

medium voltage

n Traction (commuter trains

as well as high speed trains)

n VSC HVDC and FACTS

n Large wind turbines

Features n High power density for

compact converter design

n AlSiC base plate for highest

reliability and high power

cycling capability

n Increased creepage and

clearance for use in rough

environments

n Package material with CTI

up to 600

n IHV B-series, the second

generation with operating

temperature up to 150 °C

available

n Lightweight materials for

reduction of overall conver-

ter weight

n Extended DC stability

Product rangen EasyBRIDGE

800 V, 30 A – 50 A

1 600 V, 30 A – 65 A

n eupec™ IsoPACK™

1 600 V, 85 A up to 205 A

n eupec™ EconoBRIDGE™ 2 + 4

1 600 V, 85 A up to 360 A

Circuit design n 3-phase rectifier in

uncontrolled, half controlled

and full controlled bridges

n 3-phase AC switches

Applicationsn Drives

n Power supplies

n Uninterruptible power

supplies

n Chopped power supplies

for high power SMPS

n Softstarters

Features

EasyBRIDGE and eupec™ EconoBRIDGE™n Solder pin and PressFIT

modules with optional Brake

IGBT and

optional NTC resistor in

rectifier configuration

n Housing concept matches

the EasyPACK and

EconoPACK™ inverter

module series

n EasyBRIDGE modules also

available for single phase

applications and with PFC

n RoHS-compliant

eupec™ IsoPACK™ bridgesn Modules with screwable

power terminals

n Concept designed for

replacing 3 x 20mm

SCR / diode half bridge

modules

n Housing concept matches

the 62 mm IGBT modules

Page 6: High Power Semiconductors | Infineon Technologies

Thyristor and diode modules PowerBLOCKA product range for optimum design

Thyristor and diode PressPACKHigh power – Low loss

Less CO2 generation

Product rangen Phase control thyristors

PowerBLOCK

1 200 V – 3 600 V, 60A – 800A

n Rectifier diode PowerBLOCKs

800 V – 4 400 V, 89 A – 1 070 A

n Fast Diode PowerBLOCKs

800 V – 2 600 V, 46 A – 240 A

Circuit designn Modules with single diodes

or thyristors

n Modules with two diodes,

thyristors or combination of

both

n In halfbridge configuration

for rectifier or AC switches

Applications

n Industrial drives

n Soft starters

n Power supplies

n Renewable energy

n Welding

n Electrolysis

n Traction

Features

n Modules in pressure

contact technology with

screwable power terminals

for high current and high

blocking voltage

n Short on fail

n Preventing arcing on fail

n Highest robustness and

reliability

n Configurations for easy

rectifier designs

n Thyristor-Thyristor TT

n Thyristor-Diode TD

n Diode-Thyristor DT

n Diode-Diode DD

n Single thyristor TZ

n Single diode DZ

n Single diode ND

Product rangen Phase control thyristors

200 V – 9 500 V

86 A – 4 770 A

n Light-triggered thyristors

5 200 V – 8 000 V

500 A – 3 500 A

n Rectifier diodes

200 V – 9 000 V

120 A – 8 300 A

n Fast rectifier diodes

600 V – 4 500 V

56 A – 1 950 A

Applicationsn Industrial drives

n Power supplies

n HVDC line transmission

n Static VAR compensation

n Soft starters

n Traction

n Renewable energy

n Welding

n Electrolysis

n Pulsed power

Features

n High current

n High blocking voltage

n Light-triggered types

available

n Highest robustness

n Highest reliability

n Integrated protection

functions (only for LTT)

n High case non rupture

current capability

Page 7: High Power Semiconductors | Infineon Technologies

EiceDRIVER™ IGBT driver boards and ICsThe expert’s choice

2ED300C17-S/-ST

Applicationsn Renewable energy systems

n Traction

n Large drives

n Distributed power

n Other applications > 100 kVA

Features

n For 1200V and 1700V

IGBT modules

n VCEsat monitoring

n Soft shut down in fault

conditions

n Safe electrical isolation

according to EN 50178

n Integrated DC – DC SMPS

n High peak output current

of 30 A

n ±15 V secondary drive

voltage

1ED020 I 12-F2

Applications

n AC-Drives

n Uninterruptible power

supplies

n PV-Inverters

Features

n Single channel isolated

driver

n For 600 V and 1200 V IGBTs

n 2 A rail-to-rail output

n Enhanced VCEsat-monitoring

n Active Miller Clamp

STACKs and assembliesWe are the experts for power systems

Features

n Short time-to-market and

reduced system costs due

to “ready-to-use” power

section

n Flexible system for power

solutions due to modular

approach

n Modular stack design

for industrial approved

cabinets

n Optimized integrated

thermal management

n Low inductance IGBT stack

design

n Easily expandable by

paralleling units

Product range n IGBT PrimeSTACK™

100 kW – 950 kW

n IGBT ModSTACK™ HD

500 kW – 8 MW

n SCR / diode stacks and

subassemblies thyristor

180 V – 2 500 V

10 A – 5 000 A

Applications

n Industrial drives and

elevators

n Renewable energy and

other distributed power

generation systems

n Uninterruptible power

supplies (UPS)

n Traction

n Medical technology

n Energy treatment and HVDC

conversion

n Galvanic, electrolysis and

electroplating

n Pulsed power

n Asynchronous power links

Page 8: High Power Semiconductors | Infineon Technologies

MIPAQ™Infineon’s functional IGBT module family

Smart – a new sophisticated module concept ….with a self acting PressFIT technology

Product familyMIPAQ™ basen Sixpack configuration with

shunts and NTCn 1 200 V, 75 A – 150 An Well-proven 17mm Econo

designn Shunt values matched to

rated chip currentn Allows accurate current

sensing

MIPAQ™ sensen Sixpack configuration plus

current measurement insiden 1 200 V, 75 A – 100 An EconoPACK™ 3 packagen Sigma delta method for

current measurementn Galvanically isolated

current measurement by using Infineon’s Coreless Transformer Technology (CLT)

MIPAQ™ serven Sixpack power module with

integrated driver electronicsn 1 200 A, 100 A – 200 An EconoPACK™ 4 packagen Galvanic isolation by CLT

Product range n 650 V up to 75 A

n 1 200 V up to 50 A

Circuit design n PIM

n Sixpack

Applications

n Industrial Drives

n Uninterruptable Power

Supplies

n Solar Inverters

n Air-conditioning

n Welding

n Inductive Heating

Applications n Industrial drives, such as

compressors, pumps and fans

n Power Suppliesn Air conditioning systemsn Solar inverters

Features n Reduction of systems costs

and development times n High power density for

compact inverter designn Excellent power cycling

capabilityn 150°C operation junction

temperaturen RoHS compliant

Features

n Press-in process by tighte-

ning the module

n Gas tight and reliable

PressFIT connection

n Robust, reliable housing

concept with decoupled

DCB force

n Flexible mounting

possibilities

n Reduced process time for

customers

n Connections suitable for

sense signals

n Decreased Fit rates

Page 9: High Power Semiconductors | Infineon Technologies

RC-Drives, RC-Drives Fast, HighSpeed 3, TRENCHSTOP™ DuoPAK IGBTs, TRENCHSTOP™2Soft Switching/Resonant and Hard Switching

New 650V TRENCHSTOP™5 and new Rapid Diode FamilyIntroducing a technology to match tomorrow‘s High Efficiency

demands

Features

Soft Switching/Resonant Reverse Conducting IGBTs n The world famous inductive

cooking IGBT series – #1 best-selling family worldwide

n Available in 600 V, 1100 V, 1200 V, 1350 V and 1600 V voltage classes in our RC-H3 family

n Best-in-Class efficiency and robustness

Hard Switching600 V RC-Drives600 V RC-Drives Fastn Optimized Eon, Eoff and

Qrr for up to 20 % lower switching losses

n Operating range from DC to 30kHz

n Maximum junction temperature 175°C

n Short circuit capability of 5μs

n Very tight parameter distribution

n Best-in-Class current versus package size performance

n Smooth switching performance leading to low EMI levels

n Complete product portfolio and PSpice Models on the internet

600 V/1200 V HighSpeed 3n Best-in-Class switching

performance for switching frequencies >20 kHz

n Very low Vce(sat) for low conduction losses

n Positive Vce(sat) temperature coefficient meaning thermal runaway is not an issue and paralleling is easy

n 5μs short circuit rating

600 V TRENCHSTOP™ DuoPAK IGBTs, 1200V TRENCHSTOP™2n Lowest Vce(sat) drop for lower

conduction losses

n Low switching losses

n Easy parallel switching capability due to positive temperature coefficient in VCE(sat)

n High ruggedness, temperature stable behavior

n Low EMI emissions

n Low gate charge

n Very tight parameter distribution

Features

650 V TRENCHSTOP™5 n 650 V breakthrough voltage

n Compared to Infineon’s

Best-in-Class HighSpeed 3

family

n Factor 2.5 lower Qg

n Factor 2 reduction in

switching losses

n 200 mV reduction in

VCE(sat)

n Low Coss/Eoss

n Mild positive temperature

coefficient VCE(sat)

n Co-packed with Infineon’s

new Rapid Si-diode

technology

Applications

n UPS

n Major Home Appliances

n Induction Heating

n Solar Inverter

n Motor Control

n Welding Inverter

n SMPS

n Telecom

Rapid 1 Diode

n Temperature stable forward

voltage (VF) of 1.35 Vn 650 V breakthrough voltage

n Low reverse recovery

current (Irrm)

n Soft reverse recovery for

outstanding EMI behaviour

n trr < 50 ns

Rapid 2 Dioden Temperature stable forward

voltage (VF) of 1.6 Vn trr < 20 ns

n Soft reverse recovery for

outstanding EMI behavior

n Excellent cost optimized

alternative to silicon

carbide (SiC) diodes

Page 10: High Power Semiconductors | Infineon Technologies

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Published by Infineon Technologies AG85579 Neubiberg, Germany

© 2013 Infineon Technologies AG. All Rights Reserved.

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Order Number: B133-H9107-G5-X-7600 Date: 04 / 2013

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