High Performance/Reliability Flash Solution for Embedded System and Automotive Application Speaker : Crystal Chang Author: Alex Tseng Nov. 2013
High Performance/Reliability Flash Solution for Embedded System and Automotive Application
Speaker : Crystal Chang Author: Alex Tseng Nov. 2013
ATP Confidential © 2013 ATP Electronics, Inc. 1
Company Profile
Product Selection by Applications
Major Concerns of Flash Product Reliability
ATP Solution of High Reliability Flash Product
Agenda
ATP Confidential © 2013 ATP Electronics, Inc. 2
ATPエレクトロニクスについて
Founded in Silicon Valley, USA in 1991 Offices in US, Taiwan, China, Japan,
and Europe (Netherlands, Germany) Core Competencies OEM mission critical business engagement Strengths: Long term business stability, services focusing in supply chain,
engineering, and process/quality management Global multi-party CM/EMS/3PL supply chain management Global support base for both OEM end customers and their supply chain partners
DRAM & Flash products manufacturing Taiwan SMT facilities: Kaohsiung – EVT/DVT/Burn In, Mass Production Scalable to market demands and customer requirements
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Extended & Long Term Product Longevity Long term partnership with first tier memory manufacturers Consistent DRAM and NAND Flash IC supply in varying market conditions
Controller Partnerships with SiliconMotion and LSI Long term partnership for support on flash validation and application
specific design
Micron PLP Program - Long Life Cycle Based on Micron’s Product Longevity Program, ATP
guarantees extended product life cycles of up to 10 years Longer life cycle to help reduce the frequency of re-design and
re-qualification
ATP Advantages
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100% Tested for Reliability and Consistency TDBI (Test During Burn In) & ATE (Automated Test Equipment) provide
Increased flexibility, efficiency and scalability for DRAM testing Extended and industrial temperature testing Environmental testing & application testing
Management of Total Cost of Ownership (TCO)ATP ensures the product life cycle and quality at the beginning of project to manage the TCO. Endurance and retention evaluations are initiated to provide the most
cost-effective option to customers.
Controlled Bill of Materials (BOM) Long product life cycle with buffer inventory support and advance PCN/EOL
ATP AdvantagesATP has accumulated many years of experience in the design, manufacturing, and support of two main product lines: DRAM modules & NAND flash storage products.
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Host: Integrated USB 3.0 Host is mature for UHS-I reader ; Mobile AP will support SD 3.0 in 2014
Device: UHS-I SD/microSD is ready Full HD video camera and display is popular Embedded Application of UHS-I SD/microSD
Why UHS-I SD and microSD now?
UHS-I ConventionalSD
MB/s4X71
17
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USB 3.0 Host is ready for UHS-I Card Reader Application Only USB 3.0 (5Gb/s) can fully utilize
UHS-I speed (Up to 104 MB/s) instead of USB 2.0 (480Mb/s)
Integrated USB 3.0 Host is mature for UHS-I reader
2011/Sandy BridgeUSB 3.0 Host X2
2012/Ivy BridgeIntegrated
USB 3.0 Host X2
2013/HaswellIntegrated
USB 3.0 Host X6
USB2.0 USB3.0
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Full HD Video Camera/Recording, and Playback become mainstream standard of high end Smartphone in 2013
2M pixels (Full HD) front video camera and >5-inch display (Full HD) is a good carrier to drive user to choose UHS-I
FullHD Video Camera and Display is popular
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Multi Channel Full HD Surveillance/Drive Recorder Car NAVI and RSE (Rear Seat Entertainment) Multi Channel Data Logger/Measurement Automation Control
Embedded Application of UHS-I SD/microSD
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The life of Flash Storage is limited!!! EnduranceProgram/Erase cycles of MLC is 3,000Program/Erase cycles of SLC is 30,000~60,000
Data RetentionMLC: 5/10 Years ( ≦10% of Max. P/E cycles),
1 Year ( > 10% of Max. P/E cycles)SLC: 5/10 Years ( ≦10% of Max. P/E cycles),
1 Year ( > 10% of Max. P/E cycles) Read DisturbanceContinuously Read one address without moving data is ~100K times
Major Concerns of Flash Product Reliability
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Risk of Zone 1: Endurance Risk of Zone 2: Read Disturbance Risk of Zone 3: Read Disturbance and Data Retention
Data Structure of Flash Storage Device
Zone 2 (Frequently Read)Operating System
Application Program
Zone 3 (Data Retention is Sustainable)
Map/Database
Zone 1 (Frequently Write)Multimedia/Data Log
File Allocation Table/MBR
Spare Block
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ATP Innovative Flash Solution
Conventional
ATP
Innovative
Host CPUPHYPHY Wear-
LevelingECC
SRAM
FlashInterface
NANDFlash
Flash Controller
HostCPU
PHYPHY Wear-Leveling
ECCSRAM
FlashInterface
NANDFlash
Flash Controller
EnduranceRead
Retention
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ATP Reliability Solution
Endurance Engine
Advanced Wear-leveling
Block management
ATP Total Reliability Protector
Refresh Engine
Auto ECC Check
Auto Back-Up before failure
Refresh Engine
Reliable Mode
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High Drive-Write-Per-Day Requirement OLTP/Cloud Server/Data-Log Healthcare/Surveillance Total Cost of Ownership is only ¼(5X cost/ 20X DWPD)=1/4
Application of Endurance Protector
Up to 5X cost
Up to 20X DWPD (Endurance)
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Read-Frequently Device Boot-Up/ Operating System Automation/Robot/POS Application Program/Gaming
Application of Read Protector
Others ATP Model
Before100,000
>2,000,000*
*100% Read-only
After
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Long Product life requirement Automotive IVI/NAVI system Mission-critical Environment
Application of Retention Protector
Others ATP Model
Data Retention
1~5 Yrs
>2X*
*With system support
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ATP Total Reliability Protector saves your TCO: Endurance Protector: ¼ TCO Read Protector: >2M times read (ATP) VS.100K times read Retention Protector: 2X more data retention
Conclusion
Refresh EngineReliable Mode
ATP Total Reliability Protector
Endurance Engine Advanced
Wear-levelingBlock management
Refresh EngineAuto ECC CheckAuto Back-Up
before failure
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CFast
Industrial Grade UFD
microSD
CF
mSATAeUSB
Slim SATA
SATA SSD
Horizontal SATA
Vertical SATASATA
eUSB
DRAM
Industrial Grade UFD
SD
ATP Product Summary
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TCO Evaluation Sheet can help to save total cost when you care: Performance/Form-factor Write Frequently or Read Frequently
Product Selection by Applications
10MB/s 30MB/s 100MB/s 250MB/s 500MB/s
PowerProtector Model
SDminiSD
MicroSD
UFD 2.0/eUSB/CF/DOM/CFast
SlimSATAmSATA
SATA II SSD/SATA III SSD
Form
Fac
tor S
ize
Performance
Den
sity
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