High Performance Thin-film Transistor (TFT) with Amorphous InGaZnO 4 Semiconductor 1. Thin-film Transistor (TFT) Switching device & Driving device in display such as LCD, OLED, Flexible Electronics 2. High Performance of InGaZnO 4 TFT High electron mobility Room temperature & large area deposition Prof. Hideo HOSONO (Tokyo Institute of Technology) Gate line Data line Storage capacitor ITO substrate gate a-IGZO gate insulator glass a-IGZO TFT with novel structure a-IGZO bottom-gate coplanar-type TFT environmental stability coplanar homojunction PECVD SiN x :H barrier layer conductive a-IGZO 3.3 x 10 -3 Ωcm source drain protection channel metal line H H H H H H 0 10 20 0.0 1.0x10 -4 2.0x10 -4 3.0x10 -4 4.0x10 -4 5.0x10 -4 Drain Current (A) Drain Voltage (V) a-IGZO TFTs in 1cm 2 a-IGZO coplanar homojunction TFT V ON - 1.86 V V TH - 0.96 V μ sat 9.8 cm 2 /Vs S 0.15 V/dec W/L= 60 / 8 μm VD = 12 V on-channel series resistance RsW = 220 (Ωcm) 12 TFTs 12 TFTs Rs=∆ID/∆VD @VGS=20V VD=0V Gate gate insulator ID RS/D RCH RS/D RC RC metal gate RsW = RCH+2(RS/D+RC) -20 -10 0 10 20 10 -14 10 -12 10 -10 10 -8 10 -6 10 -4 Drain Current (A) Gate Voltage (V) 20V 15V 10V 5V AMOLED Backplane Candidates a-Si:H μc-Si:H (PECVD) micro-Si a-IGZO LTPS μ (cm 2 /Vs) 0.5~1 (BG) 0.5~1 (BG) 5~30 (TG) 3 10 5~20 30~300 Stability (ΔVTH) Large >>10V =<a-Si:H >LTPS 1.8 V >=LTPS <a-Si:H 1~10V Small ~1V uniformity Good ? No data Good Good (short-range) Poor (short-range) TFT structure staggered staggered staggered coplanar staggered coplanar TFT & Cs size Large Large Middle Middle Small Middle Small Pixel circuit design Large Large Middle Middle Small (Simple) Small FPD application (TFT on glass) 3. InGaZnO 4 TFT Application Flexible electronics application (TFT on polymer film) I DS (A) V GS (V) -2 0 2 4 6 10 -9 10 -7 10 -5 10 -11 W/L=100/10 μm V DS = +5 V Polymer ITO Y 2 O 3 a-InGaZnO 4 Au/Ti Glass & Polymer film available as substrate High optical transparent semiconductor High Quality IGZO Sputtering Target Contact : Fujibayashi, Tel +81-(0)3-5573-6571, Nippon Mining & Metals Co., LTD High Density > 95% For less nodules or particles DC Sputtering Low Bulk-Resistivity 10 –2 Ωcm or less Large size > 150 mm×1200 mm For high productivity Stable Sputtering Uniform Microstructure IGZO sputtering target supplier 4. Patent status & Patent owner contact Available for licensing Patent No. : WO2003/040441, WO2005/088727 Apply country : JP,US,EP,KR,CN,TW Patent owner contact : Masaru OZAKI (JST) Phone:+81-3-5214-8486, e-mail: [email protected] Contact: Sho YOSHIDA , Phone:+81-3-5299-5294, [email protected] , JX Nippon Mining & Metals Corp. Toppan SID 2010, FPD Internatioal 2011 SID2010, CES2012 FPD Internatioal 2010 , CES2012 6.4” AM-LCD 55”AM-OLED (Pixels1920x1080) LG 32”AM-LCD (Pixels 1366x768) 33”AM-OLED (Pixels1920x1080) AUO 11.7” AM-OLED (Pixels 960x540) Sony 19” AM-OLED (Pixels 960x540) Samsung Mobile Display 70”AM-LCD 55”AM-OLED (Pixels1920x1080) Samsung Electronics FPD Internatioal 2009 4” AM-EPaper 1T1C on plastic M. Ito et al., IEICE Trans. E. E90-C SID 2010 Toppan SID 2010, FPD Internatioal 2011 SID2010, CES2012 FPD Internatioal 2010 , CES2012 6.4” AM-LCD 55”AM-OLED (Pixels1920x1080) LG 32”AM-LCD (Pixels 1366x768) 33”AM-OLED (Pixels1920x1080) AUO 11.7” AM-OLED (Pixels 960x540) Sony 19” AM-OLED (Pixels 960x540) Samsung Mobile Display 70”AM-LCD 55”AM-OLED (Pixels1920x1080) Samsung Electronics FPD Internatioal 2009 4” AM-EPaper 1T1C on plastic M. Ito et al., IEICE Trans. E. E90-C SID 2010