EKV v2.6 Users' Meeting EKV v2.6 Users' Meeting - - 2004 2004 1 1 High High - - Level Level Description Description of of Thermodynamical Thermodynamical Effects Effects in in the the EKV 2.6 MOST Model EKV 2.6 MOST Model C. C. Lallement Lallement *, F. *, F. Pecheux Pecheux **, W. **, W. Grabinski Grabinski *** *** * * CNRS CNRS - - PHASE (ERM PHASE (ERM - - PHASE) Laboratory, Strasbourg, France PHASE) Laboratory, Strasbourg, France christophe.lallement christophe.lallement @ @ ensps.u ensps.u - - strasbg.fr strasbg.fr **LIP6 Laboratory, Paris, France **LIP6 Laboratory, Paris, France [email protected][email protected]***Motorola, ***Motorola, Geneva Geneva Modeling Modeling Center Center , , Switzerland Switzerland [email protected][email protected]
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High-Level Description of Thermodynamical Effects in … · · 2011-12-20High-Level Description of Thermodynamical Effects in the EKV 2.6 MOST Model ... Access functions scattered
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TheThe studiedstudied transmission transmission schemeschemeOneOne schemescheme, , twotwo HDLsHDLsOtherOther studiesstudies on on thethe EKV MOST Model v2.6EKV MOST Model v2.6ResultsResults & & OngoingOngoing researchesresearches
MixedMixed--SignalSignal Model StructureModel StructureReferenceReference to to predefinedpredefined//previouslypreviously defineddefined submodelssubmodelsDeclarationDeclaration ofof thethe modelmodel interfaceinterface
use use disciplines.electromagnetic_system.alldisciplines.electromagnetic_system.all;;use use disciplines.thermal_system.alldisciplines.thermal_system.all;;library library ieeeieee;;use use ieee.math_real.allieee.math_real.all;;
entity entity EKV_n_THEKV_n_TH isisgenericgeneric
((WeffWeff : real := 1.5e: real := 1.5e--6; 6; ---- channel widthchannel widthLeffLeff : real := 0.15e: real := 0.15e--6; 6; ---- channel lengthchannel lengthPHI : real := 0.97; PHI : real := 0.97; ---- bulk Fermi potentialbulk Fermi potentialGAMMA : real := 0.71; GAMMA : real := 0.71; ---- substrate factorsubstrate factorKP : real := 453.0eKP : real := 453.0e--6; 6; ---- transconductancetransconductance factorfactorTHETA : real := 50.0eTHETA : real := 50.0e--3; 3; ---- Mobility reductionMobility reductionVTO : real := 0.4; VTO : real := 0.4; ----long channel threshold volt.long channel threshold volt.TCV : real := 1.5eTCV : real := 1.5e--3; 3; ---- temperature temperature coeffcoeff. (VTO). (VTO)BEX : real := BEX : real := --1.5 1.5 ---- temperature temperature coeffcoeff..););
end;end;
`includeinclude "disciplines.h""disciplines.h"
//*** model parameter definitions//*** model parameter definitionsparameter real parameter real boltzboltz = 1.3806226E= 1.3806226E--23; 23;
parameter real charge = 1.6021918Eparameter real charge = 1.6021918E--19; 19; parameter real parameter real reftempreftemp = 300.0; = 300.0; //** geometrical parameters//** geometrical parametersparameter real parameter real weffweff = 100.0E= 100.0E--6;6;parameter real parameter real leffleff = 100.0E= 100.0E--6; 6; //*** Threshold voltage and substrate effect//*** Threshold voltage and substrate effect//** parameters (long//** parameters (long--n_channeln_channel))parameter real parameter real vtovto = 0.6; = 0.6; parameter real gamma = 0.7; parameter real gamma = 0.7; parameter real phi = 0.5;parameter real phi = 0.5;//*** Mobility parameters (long//*** Mobility parameters (long--channel)channel)parameter real parameter real kpkp = 20.0E= 20.0E--6; 6; parameter real theta = 50.0Eparameter real theta = 50.0E--3;3;//*** Temperature coefficients//*** Temperature coefficientsparameter real parameter real tcvtcv = 1.5E= 1.5E--3; 3; parameter real parameter real bexbex = = --1.5; 1.5;
port (terminal port (terminal d,g,s,bd,g,s,b: electrical;: electrical;terminal terminal j:thermalj:thermal););
The description is achieved by use of The description is achieved by use of KirchhoffKirchhoff lawslawsKirchhoffKirchhoff laws imply energy conservation rules on laws imply energy conservation rules on nodesnodesA A nodenode is associated to a is associated to a disciplinediscipline (electrical, (electrical, thermal, …)thermal, …)A A disciplinediscipline is characterized by two variables : is characterized by two variables :
Access to conservative variables in Access to conservative variables in thetheEKV transistor EKV transistor modelmodel
port (terminal port (terminal d,g,s,bd,g,s,b: electrical;: electrical;terminal terminal j:thermalj:thermal););
end;end;architecture architecture equequ of of ekvnekvn isis
quantity vg quantity vg acrossacross g to b;g to b;quantity quantity vdvd acrossacross d to b;d to b;quantity quantity vsvs acrossacross s to b;s to b;quantity id quantity id throughthrough d;d;quantity quantity isourceisource throughthrough s;s;quantity quantity gpowergpower throughthrough thermal_groundthermal_ground to j;to j;quantity temp quantity temp acrossacross j to j to thermal_groundthermal_ground;;
StudiesStudies on on ModelingModeling on on MultiMulti--disciplinesdisciplines systemssystems((electricalelectrical, , mechanicalmechanical, thermal, , thermal, opticaloptical, , chemicalchemical)*)*
* F. Pécheux, C. Lallement, A. Vachoux, “VHDL-AMS and Verilog-AMS as alternative HDL's for the Efficient Modeling of Multi-disciplines Schemes,” 'IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems‘,February 20005
* F. Pécheux, B. Allard, C. Lallement, A. Vachoux, H. Morel “Modeling and simulation using bond graphs and VHDL-AMS” accepted to the ICBGM’2005 conference, january2005, New Orleans - USA
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ConclusionConclusion
+ + ImplicitImplicit construction construction ofof thethe Kirchhoff Kirchhoff graphgraph+ Simple + Simple SimultaneousSimultaneousstatementstatement-- Non mutable PortsNon mutable Ports-- ProceduralProcedural notnotsupportedsupported yetyet by by toolstoolsPowerfulPowerful simultaneoussimultaneousstatementsstatements
Explicit construction via Explicit construction via contribution contribution operatoroperator <+<+-- Access Access functionsfunctions scatteredscatteredthroughoutthroughout thethe ODAEODAE+ + ImplicitImplicit declarationdeclaration ofofnets nets andand portsports+ + AutomaticAutomatic insertion insertion ofofconnectconnect modulesmodules+ Major + Major enhancementsenhancements in in VerilogVerilog--DD 2001 but 2001 but notnot yetyetsupportedsupported by by toolstools
TheThe samesame systemsystem cancan bebe implementedimplementedbothboth in VHDLin VHDL--AMS and AMS and VerilogVerilog--AMSAMSVHDL-AMS Verilog-AMS
ArticlesArticlesF. Pécheux, C. Lallement, A. Vachoux, “VHDL-AMS and Verilog-AMS as alternative HDL's for the Efficient Modeling of Multi-disciplines Schemes,” 'IEEE Transactions on Computer-AidedDesign of Integrated Circuits and Systems‘, February 2005F. Pécheux, B. Allard, C. Lallement, A. Vachoux, H. Morel “Modeling and simulation usingbond graphs and VHDL-AMS” accepted to the ICBGM’2005 conference, january 2005, New Orleans - USAF. Pécheux, C. Lallement, “VHDL-AMS and VERILOG-AMS as Competitive Solutions for theHigh Level Description of Thermoelectrical Interactions in Opto-Electronic InterconnectionSchemes,” System Specification and Design Languages, Editeurs: E. Villar, J. Mermet, Kluwer(ISBN 1-4020 - 7414-X), pp. 41 - 43, avril 2003.C. Lallement, F. Pécheux, W. Grabinski, “High Level Description of Thermodynamical effectsin the EKV 2.6 MOST Model (Special session "MOS Modeling and Modern Mixmode Design"),” 9th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2002), Wroclaw/Pologne, pages 45-50, juin 2002.C. Lallement, F. Pécheux et Y. Hervé, “A VHDL-AMS Case Study: The Incremental Design ofan Efficient 3rd generation MOS Model of Deep Sub Micron Transistor,” SOC Design Methodologies, Editeurs: M. Robert, B. Rouzeyre, C. Piguet, M. -L. Flottes, Kluwer AcademicPublishers, Boston, Hardbound (ISBN 1-4020-7148-5), pages 349 - 360, juillet 2002.C. Lallement, F. Pêcheux, Y. Hervé,” VHDL-AMS design of a MOST model including deepsubmicron and thermal-electronic effects,” 2001 IEEE Workshop BMAS 2001, pp. 91-96, Santa Rosa, USA, 2001.
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