Retrospective eses and Dissertations Iowa State University Capstones, eses and Dissertations 1981 High efficiency microwave power amplifier design Edward William Harrio Iowa State University Follow this and additional works at: hps://lib.dr.iastate.edu/rtd Part of the Electrical and Electronics Commons is Dissertation is brought to you for free and open access by the Iowa State University Capstones, eses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective eses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. Recommended Citation Harrio, Edward William, "High efficiency microwave power amplifier design " (1981). Retrospective eses and Dissertations. 7425. hps://lib.dr.iastate.edu/rtd/7425
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Retrospective Theses and Dissertations Iowa State University Capstones, Theses andDissertations
1981
High efficiency microwave power amplifier designEdward William HarriottIowa State University
Follow this and additional works at: https://lib.dr.iastate.edu/rtd
Part of the Electrical and Electronics Commons
This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State UniversityDigital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State UniversityDigital Repository. For more information, please contact [email protected].
Recommended CitationHarriott, Edward William, "High efficiency microwave power amplifier design " (1981). Retrospective Theses and Dissertations. 7425.https://lib.dr.iastate.edu/rtd/7425
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UniversiW Microllms
International 300 N. ZEEB RD., ANN ARBOR, Ml 48106
8209125
Harriott, Edward William
HIGH EFFICIENCY MICROWAVE POWER AMPLIFIER DESIGN
Iowa State University PH.D. 1981
University Microfilms
I n ter n sti 0 n &l 300 N. zeeb Road, Ann Arbor, MI 48106
Copyright 1981
by Lockheed Electronics Company, Inc.
Harriott, Edward William
All Rights Reserved
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4.7. Measured Performance vs. the Collector Output Model
The dc to RF conversion efficiency (ti) model predicted values
defined by Equation 3.9 are very well-supported by the measured efficiency.
This very close correlation between the measured and model defined values
over the test range of frequency and collector voltage supports the
interrelated dependencies described in Section 3.5.2.4 and defined in
Equation 3.9.
The model derived values and the performance defined values of
Rp shown in Table 5 are in relatively close agreement at the lower
frequency. The somewhat larger disagreement between the measured and
58
model-defined values of at higher frequencies is supported by
Krishna et al. [56] and Kirk [52]. The is both frequency and
collector current density related. This relationship places a definite
limitation upon the model use relative to the accuracy of the V sat
approximation used.
The model predicted performance disclosed excellent agreement at
the intermediate output power levels as shown in Table 7. The close
agreement reflects the lower collector current density experienced at
the reduced output power level. Because of the reduced collector current
the actual voltage did not increase beyond the estimated value.
59
5. SUMMARY, CONCLUSIONS AND FUTURE RESEARCH WORK
5.1. Summary and Conclusions
Large-signal microwave amplifier design is considerably more
complicated than small-signal design. Small-signal amplifiers are
generally designed to provide a specified gain over a defined bandwidth,
relative to the design frequency. While well-defined stability
boundaries are assured, input and output matching circuits can be mutually
varied to meet an acceptable gain in small-signal design. In large-
signal designs, the output-matching circuit must principally satisfy
good collector efficiency and maximum saturated.output power with
good stability over the operating frequency range. While the output
match also affects power gain, this factor is usually in conflict with
the principal objective of saturated output power. Consequently, power
gain often must be sacrificed from 1 to 2 dB from the maximum usable
value. The input-matching circuit design is principally concerned with
power-gain conservation and gain flatness. The design of the input
circuit has no relationship to the saturated output power or collector
efficiency.
Complete equivalent-circuit representations based on the scattering
matrix, which account for forward and reverse power flows, are not
available with large-signal microwave power amplifiers. Similarly
transistor characterizations, that would serve large-signal objectives as
effectively as the S-parameter characterization serves the small Class-A
design, are not widely available. Where complete large-signal character
ization has been undertaken, a large number of painstaking measurements
60
have been necessary. Even if complete S-parameter characterization were
available, a new dilemma would present itself. While S-parameter
characterization is excellent for assuring stability and level power gain
in broadband designs, there are no significant means for S-parameter
. consideration of the two vital large-signal design factors; saturated
power output and collector efficiency. These two factors are a function of
the collector loadline impedance. S-parameter characterization would only
permit relating the loadline to the output impedance of the transistor in
terms of power gain and stability of the amplifiers. It does not provide
characterization information necessary for assuring some objective
minimum output power and/or collector efficiency in the design.
Transistor manufacturers offer some collector loading information
for power transistors on transistor data sheets. These impedance data
are given for rated output power over the normal frequency range of
application for the particular device. There are several vague points
in such data.
1. At what point on the collector lead is such data referenced?
2. When the real component of impedance is low, one is
concerned that the losses present in the tuning stubs or
other matching elements may be obscuring the measured
impedance data.
3. How do the specified impedance values vary relative to
changes in output power levels and bias supply voltages?
4. What are the deviation limits and associated effects
allowed relative to the specified impedance data?
This dissertation has focused on this major design need.
61
A systematic approach to the characterization and design of the
microwave transistor power amplifier has been developed. The technique
provides accurate and rapid first order design data which can efficiently
provide optimal designs when incorporated with CAD programs.
5.2. Improved Power Amplifier Characterizations
The large-signal transistor design model developed in Section 3
is based upon a few simple calculations and estimates of the internal
parasitic elements which are determined by the package geometries and
power levels.
There are two primary uses for the model. First, with very limited
RF information, it will give a good, first-cut estimation of the tran
sistor's output impedance. Secondly, if the collector output impedance
characterization exists for one collector bias voltage, frequency and power
output level, a very good estimate can be made of the impedance at a
different voltage, power and/or frequency by an analysis of the model.
Additional operational parameter estimates may be derived utilizing
the efficiency parameter. The derivation of Equation 3.9 defines the
efficiency (T]) parameters. This derivation clarifies the typically
low RF to dc conversion efficiencies experienced in large-signal power
amplifier designs.
A very important consideration in selecting a transistor for use
in the design of a microwave power amplifier is the parasitic element
values. Of particular importance is collector-to-base capacitance
which should be as small as possible.
62
5.3. Future Research
This dissertation describes a successful approach to microwave
power amplifier design. However, the success is dependent upon the model
defined limitations and approximations described in Section 3.
One of the primary constraints of this modeling technique is the
RF saturation voltage value. More work remains to be done to
develop either a measurement technique or an analytical approach to
better define the V ^ value. sat
Bandwidth design limitations relative to the model defined output
impedance remain to be investigated. For broadband desighs there are two
available parameters for design control of bandwidth. These are the
Rp value and the resultant combined reactance (X'^) which represents
the parallel reactance of X and X of the model. These represent ^c ^
the design constraints for the output matching network. They can be
described in terms of an admittance at C the internal collector node
in Figure 8. This admittance is defined as which is
comprised of a conductance G and susceptance B. It is convenient to
view this admittance as comprised of a parallel combination of a
resistance R^ = 1/G and a reactance X'^ = 1/B. The parallel resistance
Rp is the resistive load which relates to the power output level desired
principally as a function of the collector dc supply bias voltage
At power levels below rated levels, R^ varies approximately inversely
with the power output. Therefore, to assure near-constant saturated
power output levels, R^ must vary inversely with frequency. These
relationships are expressed mathematically by Equation 3.9. A reason
able load-line design approach is to maintain R^ at a fixed nominal
63
value over the operating bandwidth.
Transistor conversion efficiency (t]) is optimal when the is
tuned out completely producing a purely resistive load R^. However,
this optimal condition is only attainable at one or more specific
frequencies within a design bandwidth and is physically impossible to
maintain continuously over a design bandwidth frequency range. The
magnitude of X'^ permissible deviations which will provide good performance
(high efficiency and output power) will be of extreme value in broadband
designs. It should also be noted that both the reactive deviations and
the load-line variances may be combined to provide broadband design
freedom.
5.3.1. High efficiency
High efficiency techniques which presently are not adaptable because
of the constraints imposed by the parasitic elements in the current bipolar
devices which may be alleviated by special transistor package designs and
internal parallel shunt inductors. This is an area which presents
significant opportunities worthy of investigation.
5.4. Summarization
Beyond the major accomplishments, the amplifier design technique
and model development, three very significant facts have become apparent.
First, there is an extreme need for improved high frequency measurement
instrumentation to deal with the high frequency microwave design.
Secondly, extremely high costs are incurred in conducting research in
microwave areas. Lastly, there exists a rapidly growing need for micro
wave power amplification. Rapid expansion and growth in the microwave
64
spectrum is placing a growing demand for higher power and frequency-
performance.
65
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