01-11 3D Silicon Detectors for High Energy ns, Bergen 25-0 Physics and Medical Applications edical Applicatio Ci i D Viá Th Ui i f M h UK etectors and Me Cinzia Da Viá, The University of Manchester, UK nchester-UK. De !3D silicon technology !Applications to HEP: ATLASFP and ATLAS Upgrades niversity of Man and Insertable B-Layer !Applications to Medicine and Biology and more a Da Viá , the U !Applications to Medicine and Biology and more !Summary and Perspectives Cinzia
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01-1
1
3D Silicon Detectors for High Energyns
, Ber
gen
25-0g gy
Physics and Medical Applicationsed
ical
App
licat
io
Ci i D Viá Th U i i f M h UK
etec
tors
and
Me Cinzia Da Viá, The University of Manchester, UK
nche
ster
-UK
. De
!3D silicon technology
!Applications to HEP: ATLASFP and ATLAS Upgrades
nive
rsity
of M
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pp pgand Insertable B-Layer
!Applications to Medicine and Biology and more
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!Applications to Medicine and Biology and more
!Summary and Perspectives
Cin
zia
01-1
1 3D 3D Silicon detectors detectors
ns, B
erge
n 25
-0ed
ical
App
licat
ioet
ecto
rs a
nd M
e
3D silicon detectors were proposed in 1995
nche
ster
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. De 3D silicon detectors were proposed in 1995
by S. Parker, and active edges in 1997 by C. Kenney.
nive
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of M
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1. NIMA 395 (1997) 328 2. IEEE Trans Nucl Sci 46 (1999) 12243. IEEE Trans Nucl Sci 48 (2001) 189
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Electrodes are processed inside the detectorbulk instead of being implanted on the Wafer's surface.
( )4. IEEE Trans Nucl Sci 48 (2001) 1629 5. IEEE Trans Nucl Sci 48 (2001) 2405 6. Proc. SPIE 4784 (2002)3657. CERN Courier, Vol 43, Jan 2003, pp 23-268. NIM A 509 (2003) 86-919 NIMA 524 (2004) 236-244
Cin
zia
The edge is an electrode! Dead volume at the Edge < 5 microns! Essential for
9. NIMA 524 (2004) 236-24410. NIM A 549 (2005) 12211. NIM A 560 (2006) 12712. NIM A 565 (2006) 27213. IEEE TNS 53 (2006) 1676
01-1
1 3D versus planar detectors (not to scale)3D versus planar detectors (not to scale)
LEACKAGE CURRENT prop to $ (I/V ~5x10-17 $) LOW T HELPS
0 1 2 3 4 50
2
4|Nef
f|
100
200
300
Vde
p [V
] (3
Oxygenated
nive
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of M
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Needs to tackle all those issues:
!For Neff and Reverse annealing" Oxygen
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!For Neff and Reverse annealing" Oxygenand operational conditions
!For trapping" device engineering
!New materials for low leakage current andL i
Cin
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Time [y]Lots of pioneering work from RD48/RoseNow continued by RD50
Low noise
01-1
1
The effect of trapping
CB
ns, B
erge
n 25
-0 The effect of trapping
The carriers move less " less signal since the signal is formed when charges
VB
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and
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Trapping has been measured for electrons and holes by G. Kramberger (Ljiubliana) NIMA 481 (2002) 100
01-1
1 Effective drift length due to trapping
Lns
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25-0 Leff = vdrift x #trap
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200
) o
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100
150
engt
h (m
icro
ns)
Electrons
T = -20 oC
e-e- mobility 3 times bigger!
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50
Fluence = 1015 protons cm-2
Eff
ectiv
e D
rift
LHoles
For max signal:
nive
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of M
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Electric Field ( Volt/micron )
h+
!Collect e-
!W k t V
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Ottaviani Canali et al
h+ !Work at VdriftSaturated-> e-field >2V/!m
Cin
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Trapping times from Kramberger et al. NIMA 481 (2002) 100 Simulations CDV and S.Watts NIM A 501(2003) 138 (Vertex 2001)
Ottaviani, Canali et al.
01-1
1 3D detectors Radiation hardness 8.81x1015n/cm2
1.73x1016p/cm2ns
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25-0
80
100
120
ncy
[%]
2E120
1602E NI7.55e142.00e158.81e15
tude
[mV]
2E9000e-
Vb~130V 45%
Irradiation and measurements performed in PragueC. Da Viá, T. Slaviceck, V. Linhart, P. Bem, S. Parker, S. Pospisil, S. Watts (process J. Hasi, C. Kenney)
2E
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0
20
40
60
Sign
al e
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en
C. Da Viá July 070
40
80
Sign
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C. Da Viá July 07 threshold
2E
400 !m50 !m
n IR Laser
etec
tors
and
Me 0
0 2 1015 4 1015 6 1015 8 1015 1 1016
Fluence [n/cm2]
100
120
%]
120
140
1603E-NI7.55e142.00e158.81e15[m
V]
00 50 100 150 200
Bias Voltage [V]
51%
p
n
103!mVfd ~20V
Oscilloscope
bias
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IR
20
40
60
80
Sign
al e
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ency
[%
3E
40
60
80
100
120 8.81e15
Sign
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mpl
itude
[
3E10200e-
Vb~112V
51%3E
400 !m50 !m
nive
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of M
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120
0
20
0 2 1015 4 1015 6 1015 8 1015 1 1016
S
Fluence [n/cm2]
C. Da Viá July 07
140
0
20
0 50 100 150 200Bias Voltage [V]
C. Da Viá July 07 thresholdpn
71 !mVfd ~8V
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60
80
100
120
effic
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]
4E
60
80
100
120
1404E NI7.55e142.00e15 8.81e15
Am
plitu
de [m
V]
4E13200e-
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66%
4E
400 !m50 !m
Cin
zia
0
20
40
0 2 1015 4 1015 6 1015 8 1015 1 1016
Sign
al e
Fluence [n/cm2]
C. Da Viá et al. July 070
20
40
0 50 100 150 200
Sign
al A
Bias Voltage [V]
C.DaVia July 07
66%
thresholdp
n
Vfd ~5V
01-1
1 Signal efficiency
d i l h[9] C. Da Via et al.”, (NIMA-D-08-00587)[10] G. Kramberger at al., Nucl. Instr. Meths. A 554 (2005) 212-219[11] G. Kramberger, Workshop on Defect Analysis in Silicon Det, Hamburg, August2006 http://wwwiexp desy de/seminare/defect analysis workshop august 2006 html
ns, B
erge
n 25
-0 and signal charge 2006. http://wwwiexp.desy.de/seminare/defect.analysis.workshop.august.2006.html[12] G. Casse et al., Nucl. Instr. Meths. A (2004) 362-365[14] T. Rohe et al. Nucl. Instr. Meths. A 552 (2005) 232-238[16] F. Lemeilleur et al., Nucl. Instr. Meths. A 360 (1995) 438-444
edic
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atio
100 56!m 3D - 4E [9]7%!m 3D - 3E [9]
25000.0103!m 3D - 2E [9]71 3D 3E [9]
Signal Efficiency (prop 1/L) Signal charge (depends on &'
etec
tors
and
Me
60
80
103!m 3D - 2E [9]75!m epi [11]150!m epi [11]285!m n+n pixels [14]285!m n+p strips[12]300!m p+n strips [16]
ency
[%]
15000.0
20000.0
71!m 3D - 3E [9]56!m 3D - 4E [9]50!m epi [10]75!m epi [11]150!m epi [11]285!m n+p strips[12]285!m n+n pixels [14]
ge [e
- ]
71!m 3D
nche
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20
40
Sign
al E
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5000 0
10000.0
Sign
al C
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75 m
nive
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of M
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0
20
0 2 1015 4 1015 6 1015 8 1015 1 1016
Fluence [1MeV Equivalent n/cm2]
C.DaVia; S. Watts Aug08 0.0
5000.0
0 2 1015 4 1015 6 1015 8 1015 1 1016
Fluence [1 MeV equivelent n/cm-2]
C. Da Via S. Watts April 08
75!mepi
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[ q ] Fluence [1 MeV equivelent n/cm ]
Example at 1016 ncm2 3D wins becauseCollection distance and
Cin
zia
SMIP 3D ~ 80()x (&/L) ~ 2400 x 210/(71-22electrode implant) ~ 10290e-
SMIP planar ~ 80 ((/L) x & ~ 80()~ 80x30 ~ 2400e-distance and substrate thickness aredecoupled
01-1
1 DS 3D from CNM irradiated
Uni-Freibugh with Alibava system (M. Kohler)ns
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Before irradiation 2x1015ncm-2 2x1016ncm-2
edic
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2x10 ncm22000e- at 100-150V
2x10 ncm15000e- at 350-380V
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tors
and
Me
n-type
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ster
-UK
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n-type
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Cin
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Detectors irradiated at the proton cyclotron Karlsruhe with 25 MeV protonsAnnealing state: ~ 5 days at RT (only p-type detector, 2x1016 neq/cm2: ~30 days)Noise at 2x1016is 1000e- at -45 oC -50 oC
01-1
1
3D silicon sensors strategy For the ATLAS IBL in 2013 Sketch of a
CNM
ns, B
erge
n 25
-0
For Fast-Track IBL 3D chose double-side 3D to reduce complexity . f C f
double side3D sensor
edic
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pplic
atio They will be fabricated at FBK and CNM and will have 200 microns guard fences and a
thickness of 230 microns. SINTEF and Stanford will optimise Full3D with active edges. Double sided with deep column proved good radiation hard performance with moderate bias voltage (120-150V at 5x1015ncm-2) and power dissipation of 0 034Wcm-2 at 5x1015ncm-2 at -
etec
tors
and
Me voltage (120 150V at 5x10 ncm and power dissipation of 0.034Wcm at 5x10 ncm at
10oC
nche
ster
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. De
CNM :6 wafers being completed Feb118 wafers 285 !m thickPre-production of 48 wafers ready by October 118 FE-I4 per wafer common floorplan with FBK
CNM FE-I4 wafersTo be sent to IZM By the beginning of March
nive
rsity
of M
an
8 FE I4 per wafer common floorplan with FBK
FBK
aD
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FE-I4 wafer Currently at IZM
FBK:3 Wafers at IZM for bump-bonding ( March11)24 wafers by May 11 wafers Pre-production of 44 wafers by June11Common floor plan
Cin
zia
01-1
1
ATLASFP – technical proposal 2013 and 2017Forward Detectors = use LHC beam-line as a spectrometerP t n n l ss sults in p t n t j ct h i nt l d p tu
ns, B
erge
n 25
-0 Proton energy loss results in proton trajectory horizontal departureed
Cysts -> low contrast high detectionEfficiency = low dose
edic
al A
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atio Low energy: Thick silicon or high Z semiconductors
Direct detection: high spatial resolutionX-rays
etec
tors
and
Me g p
S t d d t t
ExampleHybrid detector semiconductor + MEDIPIX
nche
ster
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. De
High energy: crystals +photo detector
Segmented detector
nive
rsity
of M
an High energy: crystals +photo detectoror high Z semiconductors
I di t d t ti hi h d t ti ffi i
X-rays
aD
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but degradation of spatialresolution scattering, diffusion
Precision degradation
Cin
zia g
But high detectionEfficiency " low dose to the patient
01-1
1 Direct detection: MEDIPIX + semiconductor
ns, B
erge
n 25
-0 Hybrid structure sensor and electronics are processed separately. Bump-bonds provide the electrical connection
edic
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!Medipix 2 and Medipix 3 are collaborations between number of European Universities and Research Institutes
etec
tors
and
Me Research Institutes.
!The device consists of a pixellated sensor chip and a read-out chip containing the amplifier, discriminators and counter(s) for each pixel
nche
ster
-UK
. De discriminators and counter(s) for each pixel.
!Applications include Mammography, autoradiography and synchrotron radiation applications
nive
rsity
of M
an
Parameters of Medipix:
applications
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Parameters of Medipix
Pixels: 256 x 256Pixel size: 55 x 55 mm2Area: 1.5 x 1.5 cm2
Cin
zia Area .5 x .5 cm
01-1
1 Direct detection
Semiconductor Materialsns
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gen
25-0 Semiconductor Materials
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atio
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Me
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of M
ana
Da
Viá
, the
UC
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01-1
1 Probability of charge sharing : planar vs 3DProbability of charge sharing : planar vs 3D
3D collects all char e on 1 electrode in most 3D collects all char e on 1 electrode in most ns
, Ber
gen
25-0 3D collects all charge on 1 electrode in most 3D collects all charge on 1 electrode in most
cases cases "" Better Energy resolution Better Energy resolution
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Central electrode
300Fraction of carriers that travel to central Fraction of carriers that travel to central electrode versus start position relative to electrode versus start position relative to
etec
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and
Me
1
300
150
[!m]
Y
planarelectrode versus start position relative to electrode versus start position relative to central electrodecentral electrode
3D
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0 8
0.9
ele
ctro
de
0
0-50 -25[!m]
3Dplanar
nive
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of M
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0.7
0.8
Planar Y=50Planar Y=150Planar Y=250ct
ion
to c
entr
al
0-50 -25[!m]
0
3D
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0.5
0.6
Planar Y=2503D Y=-12.53D Y=-5Fr
ac
Central electrode
Y
Cin
zia 0.5
-25 -20 -15 -10 -5 0
Distance from central electrode (Microns)
-30
[!m]
Simulations by S. Watts, Brunel
01-1
1
Charge sharing: 241Ans
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25-0 Charge sharing:
Measurements A. La Rosa/CERN241Am .
edic
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atio planar
etec
tors
and
Me
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3D
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Cin
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01-1
1
Indirect detection needs scintillator+ns
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25-0
Photomultipliers
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and
Me
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nive
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of M
ana
Da
Viá
, the
U
J ëll B l
Cin
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Promotion X2001Ecole Polytechnique 1, France
01-1
1
Common Scintillating crystalsns
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25-0
g yed
ical
App
licat
ioet
ecto
rs a
nd M
enc
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K. D
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f Man
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Cin
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01-1
1 Example PET
ns, B
erge
n 25
-0ed
ical
App
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Crystals+
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tors
and
Me photodetectors
nche
ster
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Da
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, the
UC
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From Del Guerra
01-1
1
ns, B
erge
n 25
-0ed
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App
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K. D
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Cin
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01-1
1 Hadron Therapy: in beam PET (TOF-PET)
ns, B
erge
n 25
-0
Need to control during the beam delivery of the energy deposition$Use of ! emitting nuclei from beam projectile reactions in the biologicalmatter
edic
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atio matter
$Use of a dedicated TEP (GSI) to monitor dosimetry and compare withsimulations
Representation of a quality control system for treatment planning. It
etec
tors
and
Me Representation of a quality control system for treatment planning. It
includes a fast beam hodoscope, a PET surrounding the target and anelectromagnetic spectrometer
nche
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From LeDuManchester April
nive
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of M
an Manchester April2008
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Cin
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01-1
1
ns, B
erge
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-0ed
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App
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Cin
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01-1
1
ns, B
erge
n 25
-0 Promising devices for TOF-PET
Timing resolution for two sintillators in coincidence
~600ps
edic
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atio 600ps
Intrinsic timing measured in FBK SoPm
~60ps Depends on number of photoelectrons
etec
tors
and
Me
TARGET IS 10-20ps!!!!!!
nche
ster
-UK
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of M
ana
Da
Viá
, the
UC
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From Del Guerra- April 2009
01-1
1 Full-3D
speed properties 3D Tests with 0.13 3D Tests with 0.13 !!m CMOS Amplifier chipm CMOS Amplifier chip(A Kok, S. Parker, C. Da Viá, P. Jarron, M. Depeisse, G. Anelli), fabricated at StanfordBy J Hasi C Kenney
ns, B
erge
n 25
-0 speed properties By J. Hasi, C. Kenney
edic
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Me !Short collection distance
!High average e-field at low Vbias
!Parallel charge collection
nche
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nive
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of M
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t 1
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3D signal simulation
2ns
T 300K
rt 1.5ns*rt~1ns
Cin
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3D Inter-electrodespacing = 50 !m
5
T 300
01-1
1 Pulse height distribution
20
25number vs. pulse height
Constant Fraction Discrimination
50 umIES
ns, B
erge
n 25
-0
! noise
! T
10
15C
ount
s
67 pulsesanalysed
edic
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Expected noise-induced time-error distribution5
10
Analysis from S. Parker
etec
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and
Me
analysis
number vs. time resolution from noise
1000
1200time resolution vs. pulse height
Noise time error
0
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. De y
600
800
t (ps
)
(using constant fraction discrimination) vs pulse height
average dtscatter plot:
155 psbottom plot:
nive
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of M
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200
400
dt vs. pulse height. bottom plot:134 ps
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0 5 10 15 20Counts
0
100
200
300
dt (p
s)
dt distribution from ~ noise-free signal
Cin
zia
39
0
2 4 6 8 10 12 14 16
pulse height (mV)
dt distribution from noise-free signaladded repeatedly to separate noisesegments.
01-1
1 Neutron detection in Hadrontherapy
U i th 3D f t f i l d t ti i ti
ns, B
erge
n 25
-0 Using the 3D feature for special detection: insertingconverting materials in the electrodes to enhance efficiency2D neutron array modification J Huler, Prague-
edic
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converter
T
Neutron beam“Standard” 2D type
etec
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and
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sensiti e ol me+
T
n+n
back side contact
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EFFICIENCY = 5%!!!
nive
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of M
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“Egg plate” 2D type(with enlarged surface to increasethe detector efficiency)
Cin
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01-1
1 Neutron 3D array modification
bi d t ti d ins
, Ber
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25-0 combine detection and conversion
Neutron beam
Prague (J. Huler)
edic
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low n+“Channel” 2D type
Neutron beamback sidecontact grid
Neutron or x-ray
etec
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Me low n+
p+n
Channel 2D type(maximized filling)
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Converting mediumP and n electrodes
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“3D inverse” structure(there are pillars instead of pores)
bottom view
silicon
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Cin
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01-1
1 3D geometry arrays
comparison of cylindrical vs square 10B converterns
, Ber
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25-0 - comparison of cylindrical vs. square 10B converter
Measurements made in Prague (J. Huler)
edic
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atio Integrates energy deposition for all particles
together
Is NOT volume or shape dependent. NO cell level effect
Measures the energy deposition events in a small (cell-size) volume
Is volume and size dependent. Cell level effect (radio-biological effect)
etec
tors
and
Me level effect
NO distinction of type of radiation. Example MOSFET dosimeter, SICEL
(radio biological effect)
Distinction amongst particles, particle counts. Example Rossi chamber (TEPC)
Copyright 1999 Oak Ridge Associated Universities
nche
ster
-UK
. De Copyright 1999, Oak Ridge Associated Universities
nive
rsity
of M
ana
Da
Viá
, the
UC
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http://www.siceltech.com
01-1
1
Benchmark Microdosimetersns
, Ber
gen
25-0
TEPC: Tissue Equivalent The HAWK2 Tissue
edic
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atio Proportional Counters
•Real Tissue Equivalent medium •Excellent shape (spherical)
Tissue Equivalent Proportional Counter
etec
tors
and
Me •Excellent shape (spherical)
•Average chord length independent from incident field direction Smaller
Size but
nche
ster
-UK
. De
HOWEVERHOWEVER
Size butRequires gas tank
nive
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of M
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#Unsuitable for QA or IN-VIVO applications as hadrontheraphy
DeNardo et al. Radiation Protection Dosimetry (2004), Vol. 108, No. 4, pp. 345---352
aD
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pp p y#poor spatial resolution #SV real micrometric scale needs
continuous gas flowNeeds more suitable true cellular size
Cin
zia continuous gas flow
sensitive volume
01-1
1 Si Microdosimetry (c. da via et al. 2010)
ns, B
erge
n 25
-0
Microdosimetry measures the stochastic energy deposition events at cellular level
!R di Bi l i l Eff ti (RBE) d d li t f
edic
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(LET or Lineal Energy) which is different for different radiation type. Average chord length <l> Average chord length <l> independenton radiation direction
etec
tors
and
Me
!!Mixed Field Mixed Field detection ina small sized array of
ll lik l t f ll d fi d
~10!m
~10!m
nche
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. De cell-like elements of well defined
Sensitive volume SVSV is required to precisely determine RBE
SVSV Silicon!dosimeter
Dose distribution d(y)
nive
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of M
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!Silicon Dose Equivalent can be determined From the lineal EnergySpectra and the tissue equivalent dose D Quality factors QQ determined
Dose distribution d(y)
aD
aV
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he U dose DTE. . Quality factors QQ determinedExperimentally.
Dsi = DTE SSi/STE
Cin
zia si TE Si TE
Dose equivalent H = Q Dsi
Plot from Rosenfeld et al
01-1
1 SOI planar microdosimetry
ns, B
erge
n 25
-0ed
ical
App
licat
io
cylindrical SV obtained by deep implantation of
etec
tors
and
Me dopants on SOI
CCE~80%. Charge funnels into substrate
nche
ster
-UK
. De
E cellent res lts
nive
rsity
of M
an Excellent resultsproving suitabilityof small SV siliconarrays for micro
aD
aV
iá, t
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ydosimetry
Cin
zia
Array of SOI -SV
ComparisonSOI with TEPC
01-1
1
Proposal for microdosimetry using 3D sensor technologyns
, Ber
gen
25-0
!We propose the fabrication of a coaxial silicon microdosimeterwhich uses a combination of micromachining (the same used for MEMS) and
p y g gyed
ical
App
licat
io VLSI.
!3D silicon sensors are an establish technology for High Energy Physicsapplications
etec
tors
and
Me applications
!Readout electrodesand ‘active edges’
p+n+ n
n+
Active Edge electrode
nche
ster
-UK
. De are ‘deep etched’
into the silicon substrate
!To enhance signal to noise and
pn n p+E-fieldelectrode
nive
rsity
of M
an
!To enhance signal to noise and!spatial information we plan to useAn array of cell-like sensitive volumes
!R d h
array
aD
aV
iá, t
he U !Readout scheme
Would depend onapplication
Oxide layer
10 !m
Cin
zia
400 umNot to scale..
01-1
1 Thin 3D sensors fabricated at Thin 3D sensors fabricated at
CNM Barcelona SpainCNM Barcelona Spainns
, Ber
gen
25-0
p+ n+ n+p+ p+
5mmSOI
100um3um
CNM Barcelona, SpainCNM Barcelona, Spain(material from of G. Pellegrini, CNM)
Thin 3D silicon sensors for neutron detection
edic
al A
pplic
atio
LowResistivityn-type
n-type HighResistivity
10um300um
Thin 3D silicon sensors for neutron detectionFabricated at CNM-Barcelona-patentedNuclear Instruments and Methods in Physics Research A 607 (2009) 57–60
etec
tors
and
Me
p d t +Aln+
nche
ster
-UK
. De
300um
Thin membrane
nive
rsity
of M
an 300um
Etched backside
•DC coupled
aD
aV
iá, t
he U •128 channels
•80 um pitch•5um holes•10um thick
Cin
zia •Area=1cm2
•p-n or n-p configuration (p-stop isolation)•Oxide thickness (window) to be decided.
01-1
1
Methodologyns
, Ber
gen
25-0
In-vivo measurements of off-field secondary particles duringhadrontherapy sessions. Use of phantoms For Q determination and
Methodologyed
ical
App
licat
io Geant4 for deep energy deposition
#Monitor the risk of secondary cancer
etec
tors
and
Me #Monitor the risk of secondary cancer
induction outside of the primarybeam in a healthy tissue due to neutronsand other particles
Isotope production duringC theraphy calculatedUsing Geant4. (J. Allison)
nche
ster
-UK
. De p
nive
rsity
of M
an
microdosimeter
Phantom to extract the deposited energy
aD
aV
iá, t
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p-beam
p gyIn different positions to be confrontedWith Geant4. simulation
Cin
zia
01-1
1 Other Example of 3D processing:
Micro-Machined Micro-Channel Platens
, Ber
gen
25-0 Micro-Machined Micro-Channel Plate
From D.R. Beaulieu IWORID 2008
edic
al A
pplic
atio
etec
tors
and
Me
nche
ster
-UK
. De
!Fast PhotomultiplierWidely used
!Pores normally coated glas
nive
rsity
of M
an
!Various applications
!Aging at high rates is anIssue
aD
aV
iá, t
he U
!Pores dimension 10!m or less
!Speed depends on pore
Cin
zia
Improvements of gain and lifetime due to novel emission and conduction layers
!Speed depends on pore !dimension
01-1
1 Curved semiconductor detectors
ns, B
erge
n 25
-0 Bernard F. Phlips, Member, IEEE, and Marc ChristophersenPresented at IEEE-NSS 2008, Dresden Germany
D Si G N d SiC l d t i d
edic
al A
pplic
atio •Done on Si , GaN and SiC already tried
•Uses Deep reaction Ion Etching
•Key to technology:
etec
tors
and
Me
•Photo Lithography works: pixels and strips madeusing ‘GrayTone Lithography’ (selects photoresistsdifferently at different depths)
nche
ster
-UK
. De
•Wafer thinning uses standard processing
•Indium bump-bonding still works on curved structure
Can be used on all material that allow DRIE
nive
rsity
of M
an •Can be used on all material that allow DRIE
•Resist spray coating
•Alternatives to CMP to improve flatness
Principle of gray-tone technology: The 3-D resist profile, a) andc), is directly transferred into silicon topography, b) and d).
aD
aV
iá, t
he U
Am-241 photon spectrum taken with a fully depleted curved pixel detector, half-pipe (1.73 keV FWHM at 9 4 V)
Cin
zia 59.54 eV).
Top-view optical micrograph of a pixel array on a curved detector(pixel dimensions 150 x 150 !m).
01-1
1 Thin silicon and 3D interconnect
an alternative to bump-bondingns
, Ber
gen
25-0 an alternative to bump-bonding
Solid-Liquid Inter DiffusionConnection -IZM
Courtesy R. Nisius, HG MoserMunich and IZM
Example of detector module
edic
al A
pplic
atio
Cooling pipeSupport/heat spreader
Co ect oExample of detector module
etec
tors
and
Me Thinned sensor/frame
Multilayer chipFlex-busModule control data link
nche
ster
-UK
. De
50!m thick prototypen-type
f Thi ili i
nive
rsity
of M
an Behaviour after irradiation This silicon requiresNew ROC development
aD
aV
iá, t
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Cin
zia
01-1
1 Conclusions and perspectives
ns, B
erge
n 25
-0
!3D technology can be used to fabricate sensors for HEP and Medicine
edic
al A
pplic
atio
!Advantages are: flexibility in tailor shapes and optimise detection
etec
tors
and
Me
!Current Applications include:
!ATLASFP, B-Layer
nche
ster
-UK
. De L F , L y
!Structural Molecular Biology 3DX
nive
rsity
of M
an
!Will be bonded to MEDIPIX2 later this year
!MCP (commercial)
aD
aV
iá, t
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!Curved structures (proposed for vertex purposes)..