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To learn more about ON Semiconductor, please visit our website
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Please note: As part of the Fairchild Semiconductor integration,
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FDPF2710T —
N-C
hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
Thermal Resistance, Junction-to-Ambient, Max.
Thermal Resistance, Junction-to-Case, Max.
FDPF2710T
• Consumer Appliances• High Power and Current Handling
Capability
• High Performance Trench Technology for Extremely LowR
• Low Gate Charge
• Fast Switching Speed
1 www.fairchildsemi.com
Absolute Maximum Ratings
Thermal Characteristics
Symbol Parameter UnitVDS Drain-Source Voltage 250 V
VGS Gate-Source voltage ± 30 V
ID Drain Current - Continuous (TC = 25°C)- Continuous (TC =
100°C)
2518.8
AA
IDM Drain Current - Pulsed (Note 1) 100 A
EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)- Derate above 25°C
62.50.5
WW/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150
°C
TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case
for 5 Seconds 300 °C
Symbol ParameterRθJC 2.0 °C/W
RθJA 62.5 °C/W
FDPF2710TN-Channel PowerTrench® MOSFET 250 V, 25 A, 42.5 mΩ
• RoHS Compliant
DescriptionThis N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has been tailored
to minimize the on-state resistance while maintain-ing superior
switching performance.
Applications
• Synchronous Rectification
DS(on)
UnitFDPF2710T
• RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
October 2013
TO-220F
GDSG
S
D
Features
-
(Note 4)
4. Essentially Independent of Operating Temperature Typical
Characteristics
Min Typ Max Unit
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:1. Repetitive Rating: Pulse width limited by maximum
junction temperature2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω,
Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ =
25°C
Device Marking Device Package Reel Size Tape Width
QuantityFDPF2710T FDPF2710T TO-220F Tube N/A 50 units
Symbol Parameter ConditionsOff Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ =
25°C 250 -- -- V
∆BVDSS/ ∆TJ
Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced
to 25°C -- 0.25 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0VVDS =
250V, VGS = 0V,TC = 125°C
----
----
10500
µAµA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V --
-- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V --
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 3.9 5.0
V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A --
36.3 42.5 mΩ
gFS Forward Transconductance VDS = 10V, ID = 25A -- 63 -- S
Dynamic Characteristics
Ciss Input CapacitanceVDS = 25V, VGS = 0V,f = 1.0MHz
-- 5470 7280 pF
Coss Output Capacitance -- 426 567 pF
Crss Reverse Transfer Capacitance -- 97 146 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125V, ID = 50AVGS = 10V, RGEN =
25Ω
-- 80 170 ns
tr Turn-On Rise Time -- 252 514 ns
td(off) Turn-Off Delay Time -- 112 234 ns
tf Turn-Off Fall Time -- 154 318 ns
Qg Total Gate Charge VDS = 125V, ID = 50AVGS = 10V
-- 78 101 nC
Qgs Gate-Source Charge -- 34 -- nC
Qgd Gate-Drain Charge -- 18 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- --
25 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 150
A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 25A -- --
1.2 V
trr Reverse Recovery Time VGS = 0V, IS = 50AdIF/dt =130A/µs
-- 163 -- ns
Qrr Reverse Recovery Charge -- 1.3 -- µC
(Note 4)
FDPF2710T —
N-C
hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
www.fairchildsemi.com
-
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer
Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode
Forward Voltage Drain Current and Gate Voltage Variation vs. Source
Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge
Characteristics
0.1 1 101
10
100
* Notes : 1. 250µs Pulse Test 2. TC = 25
oC
VGS Top : 15.0 V
10.0 V 8.0 V 7.0 V 6.5 V 6.0 V
Bottom : 5.5 V
I D,D
rain
Cur
rent
[A]
VDS,Drain-Source Voltage[V]
500
4 6 8 101
10
100
-55oC
150oC
* Notes :1. VDS = 20V2. 250µs Pulse Test
25oC
I D,D
rain
Cur
rent
[A]
VGS,Gate-Source Voltage[V]
250
0 25 50 75 100 125 1500.02
0.03
0.04
0.05
0.06
0.07
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
RD
S(O
N) [Ω
],D
rain
-Sou
rce
On-
Res
ista
nce
ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
TA = 150oC
I S, R
ever
se D
rain
Cur
rent
[A]
VSD, Body Diode Forward Voltage [V]
TA = 25oC
150* Notes : 1. VGS=0V 2. 250µs Pulse Test
10-1 100 1010
3000
6000
9000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd
* Note:1. VGS = 0V2. f = 1MHzCrss
Cap
acita
nces
[pF]
VDS, Drain-Source Voltage [V]30 0 10 20 30 40 50 60 70 80
0
2
4
6
8
10
* Note : ID = 50A
VDS = 50VVDS = 125VVDS = 200V
V GS,
Gat
e-S o
urce
Vol
tage
[V]
Qg, Total Gate Charge [nC]
FDPF2710T —
N-C
hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
www.fairchildsemi.com
-
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance
Variation vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain
Current vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
* Notes :1. VGS = 0V2. ID = 250µA
BV D
SS, [
Nor
mal
ized
]D
rain
-Sou
rce
Bre
akdo
wn
Volta
ge
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000
1
2
* Notes : 1. VGS = 10V 2. ID = 25A
r DS(
on),
[ No r
mal
ized
]D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
2.5
25 50 75 100 125 1500
10
20
30
I D, D
rain
Cur
rent
[A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100 101 10210-3
10-2
10-1
100
0.01
0.1
0.2
0.05
0.02
* Notes : 1. ZθJC(t) = 2.0
oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM *
ZθJC(t)
0.5
Single pulseTher
mal
Res
pons
e [
Z θJC]
Rectangular Pulse Duration [sec]
t1
PDM
t2
0.1 1 10 100 3000.01
0.1
1
10
100200
100μs
1ms
10ms
100ms
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
Operation in This Area is Limited by R DS(on)
SINGLE PULSETC = 25
oC
TJ = 150oC
RθJC = 2.0oC/W
DC
FDPF2710T —
N-C
hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
www.fairchildsemi.com
-
5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit &
Waveforms
VVGSGS
VVDSDS
1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ooffff)) ttff
VVDDDD
VVDSDSRRLL
DUDUTT
RRGGVVGSGS
V10V10VGS
ChaCharrgege
VVGSGS
10V10VQQgg
QQgsgs QQgdgd
IG = const.3mA3mA
VVGSGS
DUDUTT
VVDSDS
300n300nFF
50K50KΩΩ
200n200nFF12V12V
SamSamee T Tyypepeas DUas DUTT
===EEEASASAS ---- ---- LLL ASASASIII1111--------2222
BVBVDSSDSS222 ----------------------------------------
BVBVDSDSSS - V- VDDDD
VVDDDD
VVDSDS
BVBVDSDSSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t)(t)
TiTimmee
DUTDUT
RRGG
LLL
III DDD
t t pp
VV10V10VGSGS
FDPF2710T —
N-C
hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
www.fairchildsemi.com
-
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit &
Waveforms
••
DUTDUT
VVDSDS
++
__
DrivDrivererRRGG
SamSamee T Tyyppee as DUTas DUT
VVGSGS •• ddvv//dtdt ccoontntrroolllleed bd byy R RGGIISDSD
ccononttrrolollleded by by pu pullsse pee perriiodod
VVDDDD
LLLII SDSD
1010VVVVGSGS
( ( DrivDriver er ))
II SDSD( ( DUT DUT ))
VVDSDS( ( DUT DUT ))
VVDDDD
BoBodydy D DiiooddeeForForwward Vard Vololttagage Dre Dropop
VVSDSD
IIFMFM , Bo, Bodydy DiDiodode Fe Foorrwwaarrd Cd
Cuurrrrenentt
IIRMRM
BoBodydy D Diiodode Re Reevveerrssee C Cuurrrrenentt
BoBodydy Di Diodode e RReecovcoveerryy dvdv/d/dtt
didi/d/dtt
D =D =D = ------GateGateGate--------------------------- P P
Pulululsss------------------------e e e
WWWiiiddd---------------ttthhhGaGaGate Pute Pute Pulllssseee
PePePerrriiiododod
--- ---
FDPF2710T —
N-C
hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
www.fairchildsemi.com
-
7
Mechanical Dimensions
Dimension in Millimeters
TO-220F 3L
Figure 16. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight
LeadPackage drawings are provided as a service to customers
considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing
and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not
expand the terms of Fairchild’s worldwide terms and conditions,
specif-ically the warranty therein, which covers Fairchild
products.
Always visit Fairchild Semiconductor’s online packaging area for
the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
FDPF2710T —
N-C
hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
www.fairchildsemi.com
-
8
TRADEMARKSThe following includes registered and unregistered
trademarks and service marks, owned by Fairchild Semiconductor
and/or its global subsidiaries, and is not intended to be an
exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by
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DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE
CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS
DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR
USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.As used here in:1. Life support devices or systems are
devices or systems which, (a) are
intended for surgical implant into the body or (b) support or
sustain life, and (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support,
device, orsystem whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety oreffectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it
Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer
Logic™DEUXPEED®Dual Cool™EcoSPARK®EfficentMax™ESBC™
Fairchild®Fairchild Semiconductor®FACT Quiet
Series™FACT®FAST®FastvCore™FETBench™FPS™
F-PFS™FRFET®Global Power ResourceSMGreenBridge™Green FPS™Green
FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers
Sound Louder and
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Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART
START™Solutions for Your
Success™SPM®STEALTH™SuperFET®SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®SyncFET™
Sync-Lock™®*
TinyBoost®TinyBuck®TinyCalc™TinyLogic®TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault
Detect™TRUECURRENT®*SerDes™
UHC®Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the
design specifications for product development. Specifications may
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Preliminary First ProductionDatasheet contains preliminary data;
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No Identification Needed Full Production Datasheet contains
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Obsolete Not In Production Datasheet contains specifications on
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ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s
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Fairchild will not provide any warranty coverage or other
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Rev. I66
tm
®
FDPF2710T —
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hannel PowerTrench
® MO
SFET
©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. C3
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