Graphene for THz technology J. Mangeney 1 , J. Maysonnave 1 , S. Huppert 1 , F. Wang 1 , S. Maero 1 , C. Berger 2,3 , W. de Heer 2 , T.B. Norris 4 , L.A. De Vaulchier 1 , S. Dhillon 1 , J. Tignon 1 and R. Ferreira 1 1 Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot, France 2 School of Physics, Georgia Institute of Technology, Atlanta, USA 3 Université Grenoble Alpes / CNRS, Institut Néel, France 4 Center for Ultrafast Optical Science, University of Michigan, USA
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Graphene for THz technology
J. Mangeney1, J. Maysonnave1, S. Huppert1, F. Wang1, S.
Maero1, C. Berger2,3, W. de Heer2, T.B. Norris4, L.A. De
Vaulchier1, S. Dhillon1, J. Tignon1 and R. Ferreira1
1 Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot, France
2 School of Physics, Georgia Institute of Technology, Atlanta, USA 3 Université Grenoble Alpes / CNRS, Institut Néel, France
4 Center for Ultrafast Optical Science, University of Michigan, USA
Progress in Photonics Fri, 16th Oct 2015 Firenze
THz technology
§ Excite vibration and rotation modes of molecules § Many substances such as polymers, paper, packing material are transparent § Non-ionizing rays § Bandwith of futur electronic circuits
ü Interest of THz rays
ü Issue
~ 0.1 THz → ~ 10 THz ~ 3 mm → ~ 30 µm
~ 0.4 meV→ ~ 40 meV
ü The THz frequency range
Lack of compact powerful sources and sensitive detectors
Source Efficiency
Frequency (Hz) 109 1010 1011 1012 1013 1014
THz Electronic Optic
§ Optimizing devices § New concepts § Advanced materials
Progress in Photonics Fri, 16th Oct 2015 Firenze
Graphene for THz technology
Ø Unequally space Landau level energy : Tunable LL laser
Ø Plasmon resonances at THz frequencies
Ø Gapless material : THz photons can instigate interband transitions
Ø Electrical gate tunes Ef : Strength of transitions can be controlled
S. Boubanga-Tombet et al. Phys. Rev. B 85, 035443 (2012) L Prechtel et al. Nature Com. 3, 646 (2012)