Grace Pakeltis TechCon Oral Presentation

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Grace PakeltisUniversity of Illinois at Urbana-

Champaign

Transfer Printing of Thin-Film, Microscale III-V Lasers on Silicon

silicon

laser

silicon

laser

Motivation

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Beyond CMOS circuits

65 nm 45 nm 32 nm 22 nm 14 nm???CNT, graphene

2D materials, …

III-V on silicon

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direct growth lattice mismatch antiphase boundary

chip/wafer bonding bulk wafers/chips

printing thin-film III-V laser fabrication

after printing

M. E. Groenert, et al., J. Appl. Phys. 93, 362 (2001)

A. W. Fang, et al., Opt.. Exp. 14, 9203 (2006)

J. Justice, et al., Nat. Photonics 6, 610 (2012)

H. Yang, et al., Nat. Photonics 6, 615 (2012)

Transfer fully formed III-V lasers on Si

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Thin-film micro GaAs lasers AlInGaAs double quantum wells Fabry-Perot ridge waveguide Emitting at ~ 820 nm AlAs sacrificial layer undercut by HCl

Picked up by PDMS stamps

Thermally conductive interface

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Lasers printed on Si In-Ag bonding interface eutectic point ~ 150 C

top view cross sectional view

Thermal properties

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top viewthermal modeling (current 60 mA)

Lasing performance sensitive to device temperatures requires a heating sink

GaAs 55

SU-8 0.2

In 82

Thermal Conductivity (W/m/K)

Laser performance

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Lasers on different substrates electrical injection continuous wave operation at room temperature

Future work

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Integrate into Si based photonic circuits waveguides, modulators, photodetectors, etc

Materials and devices at telecomm bands (~ 1.55 µm) InGaAsP lasers grown on InP substrates

200 µmSiNx waveguides

with Intel Corp.

Acknowledgements

Thank you!9

Rogers group C. Robert and B. Corbett at Tyndall Institute, Ireland Ibrahim Ban at Intel Corp.

Acknowledgements

Thank you!9

Rogers group

C. Robert and B. Corbett at Tyndall Institute, Ireland

Ibrahim Ban at Intel Corp.