GND N/C Power Amplifier N/CIN Pdet env 18 - 26 GHz Rev. V1 · 1 No Connection 13 Pdet_env 2 No Connection 14 No Connection 3 GND 15 GND 4 RF IN 16 RF OUT 5 GND 17 GND 6 No Connection

Power Amplifier 18 - 26 GHz

Rev. V1

MAAP-118260

1

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.

For further information and support please visit: https://www.macom.com/support

DC-0009796

Ordering Information1,2

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts.

Functional Schematic

Pin Configuration3,4

3. MACOM recommends connecting unused package pins to ground.

4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground.

Features

Fully Integrated Power Amplifier

Wide Bandwidth 17.7 - 26.5 GHz

28.5 dB Small Signal Gain

37.0 dBm Third Order Intercept Point (OIP3)

28.5 dBm Output P1dB

Integrated Power Detector

Typical Bias 5 V, 650 mA

Lead-Free 5 mm 24-lead QFN Package

Description

The MAAP-118260 is a packaged linear power amplifier that operates over the frequency range 17.7 - 26.5 GHz. The device provides 28.5 dB of gain and 37.0 dBm Output Third Order Intercept Point (OIP3) with more than 28.5 dBm of Output P1dB. This power amplifier is assembled in a lead free, fully molded 5 mm, 24 lead, QFN package and consists of a four stage power amplifier with integrated, on-chip power and envelope detectors. The device includes on-chip ESD protection structures to ease the implementation and volume assembly. The device is well suited for use in the 18 GHz, 23 GHz, 26 GHz cellular backhaul applications.

Part Number Package

MAAP-118260 Bulk

MAAP-118260-TR0500 Tape and Reel

MAAP-118260-001SMB Sample Board

Pin No. Function Pin No. Function

1 No Connection 13 Pdet_env

2 No Connection 14 No Connection

3 GND 15 GND

4 RFIN 16 RFOUT

5 GND 17 GND

6 No Connection 18 Pdet_env

7 VG1,2 19 Pdet_peak

8 VG3,4 20 VD4

9 No Connection 21 VD3

10 No Connection 22 No Connection

11 VD4 23 VD1,2

12 Pdet_peak 24 No Connection

Pdet_env

GND

RFOUT

N/C

GND

Pdet_env

VG

1,2

VG

3,4

N/C

N/C

VD

4

Pd

et_

pe

ak

N/C

N/C

VD

3

VD

4

Pd

et_

pe

ak

VD

1,2

8 9 10 11 12

13

14

1

2

3

4

5

6

7

15

16

17

18

192021222324

N/C

N/C

GND

GND

RFIN

N/C

http://www.macom.com/

http://www.macom.com/support


Rev. V1

MAAP-118260

2



DC-0009796

Electrical Specifications: Freq. = 17.7 - 26.5 GHz, TA = 25°C, VD = +5 V, Z0 = 50 Ω

Absolute Maximum Ratings5,6,7

5. Exceeding any one or combination of these limits may cause permanent damage to this device.

6. MACOM does not recommend sustained operation near these survivability limits.

7. Operating at nominal conditions with TJ ≤ +150°C will ensure

MTTF > 1 x 106 hours.

Parameter Rating

Drain Voltage (VD 1,2,3,4) (Under No RF Drive)

9 V

Drain Voltage (VD 1,2,3,4) (Under RF Drive)

5.5 V

Gate Voltage (VG 1,2,3,4) -3 V

Storage Temperature -65°C to +150°C

Junction Temperature +175°C

Parameter Rating

PDISS 4.87 W

Operating Temperature -40°C to +85°C

Junction Temperature +150°C

Maximum Operating Ratings8,9

8. Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. Thermal resistance, Θjc is 18.4 °C/W.

9. For saturated performance, it is recommended that the sum of (2VDD + abs (VGG)) < 12 V.

Parameter Units Min. Typ. Max. Test Conditions

Gain dB 25 24 23

29.5 28.5 25.5

— 17.7 - 20.0 GHz 20.0 - 24.0 GHz 24.0 - 26.5 GHz

P1dB, @ 1 dB Compression dBm — 28.0 29.0 28.5

— 17.7 - 20.0 GHz 20.0 - 24.0 GHz 24.0 - 26.5 GHz

PSAT dBm 29 29 29

30.5 31.0 30.5

— 17.7 - 20.0 GHz 20.0 - 24.0 GHz 24.0 - 26.5 GHz

OIP3 dBm 36 34 34

37.0 36.7 36.5

— 17.7 - 20.0 GHz 20.0 - 24.0 GHz 24.0 - 26.5 GHz

Input Return Loss dB — 13 9.5 14

— 17.7 - 20.0 GHz 20.0 - 24.0 GHz 24.0 - 26.5 GHz

Output Return Loss dB — 12 11 15

— 17.7 - 20.0 GHz 20.0 - 24.0 GHz 24.0 - 26.5 GHz

PAE, @ 1 dB Compression % — 18 — —

Quiescent Current mA 590 — 662 —




Rev. V1

MAAP-118260

3



DC-0009796

MAAP-118260

(5x5 24Lead)4

5

6

1

2

3

4

16

N/C

N/C

N/C

N/C

N/C

N/C

N/C

N/C

RFin

RFout

100nF 0402 C1

4.7uF 0603 C2

100nF 0402 C3

4.7uF 0603 C4

7Vg1/2

8Vg3/4

100nF 0402 C5

11 Vd4

100nF 0402 C16

20 Vd4

4.7uF 0603 C15

4.7uF 0603 C6

100nF 0402 C14

4.7uF 0603 C13

21Vd3

100R 0402 R1

-5V5600R 0402 R5

13Venv

100nF 0402 C8

100nF 0402 C9

100nF 0402 C10

10KR 0402 R2

10

11

127 8 9

15

14

13

18

17

16

21

20

19

24

23

22

GRD

GRD

GRD

GRD

100nF 0402 C7

100R 0402 R3

+5V5600R 0402 R4

12Vdet

100nF 0402 C17

100R 0402 R9

5600R 0402 R10

19Vdet

100R 0402 R6

-5V5600R 0402 R7

18Venv

100nF 0402 C18

100nF 0402 C19

100nF 0402 C20

10KR 0402 R8

+5V

100nF 0402 C12

4.7uF 0603 C11

23Vd1/2

PCB Layout Parts List

Application Schematic

Part Value Case Style

C1,C3,C5,C7, C8 - C10,C12, C14,C16 - C20

100 nF 0402

C2,C4,C6,C11, C13,C15

4.7 µF 0603

R1,R3,R6,R9 100 Ω 0402

R2,R8 10 KΩ 0402

R4,R5,R7,R10 5600 Ω 0402




Rev. V1

MAAP-118260

4



DC-0009796

Handling Procedures

Please observe the following precautions to avoid damage:

Static Sensitivity

These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these CDM class C1, HBM Class 0A devices.

Biasing

All gates should be pinched-off, VG <-2 V, before applying the drain voltage, VD = 5 V (do not exceed maximum VDG value for RF drive condition). Then the gate voltages can be increased until the desired quiescent drain current is reached in each stage. The recommended quiescent bias is VD = 5 V, ID1,2 + ID3 + ID4 = 650 mA (total). The performance in this datasheet has been measured with a fixed gate voltage and no drain current regulation under large signal operation. It is also possible to regulate the drain current dynamically, to limit the DC power dissipation under RF drive. To turn off the device, the turn on bias sequence should be followed in reverse.

Detector Operation

MAAP-118260 includes dual power and envelope detectors. These are included on both sides of the device to ease integration onto larger radio boards. As per the application schematic, the power detector requires an external 5 V supply and the envelope detector requires -5 V. The output from the resistive voltage divider can be fed into a ADC or multimeter for the result.

Bias Arrangement

Each DC pin (VD1,2, VD3, VD4 and VG1,2, VG3,4) needs to have bypass capacitance of 100 nF mounted as close to the packaged device as possible.




Rev. V1

MAAP-118260

5



DC-0009796

Typical Performance Curves: VD = 5 V, IDQ = 0.65 A, VG = -1.05 ~ -0.85 V, TA = +25C

23

25

27

29

31

33

35

17 19 21 23 25 27

P1

dB

/P3

dB

/Psa

t O

utp

ut

Pow

er (

dB

m)

Frequency (GHz)

P1dB/P3dB/Psat (dBm) vs. Freq (GHz), Vd = 5V, Id = 650mA

P1dB (dBm)

P3dB (dBm)

Psat (dBm)

30

32

34

36

38

40

42

17 19 21 23 25 27

Ou

tpu

t IP

3 (

dB

m)

Frequency (GHz)

Output IP3 (dBm) vs. Freq (GHz), Vd = 5V, Id = 650mA

SCL O/P Pwr = 16.0dBm




30

32

34

36

38

40

42

44

5 10 15 20 25 30

Ou

tpu

t IP

3 (

dB

m)

SCL Output Power (dBm)

Output IP3 (dBm) vs. SCL Output Power,Vd = 5V, Id = 650mA

Freq = 17.70GHz

Freq = 19.16GHz

Freq = 20.62GHz

Freq = 22.08GHz

Freq = 23.54GHz

Freq = 25.00GHz

Freq = 26.50GHz

-40

-30

-20

-10

0

10

20

30

40

8 12 16 20 24 28

S21

/S1

1/S

22

(d

B)

Frequency (GHz)

Broadband S-Parameters vs. Freq (GHz), Vd = 5V, Id = 0.65A

S22 (dB)

S11 (dB)

S21 (dB)

22

24

26

28

30

32

34

17 18 19 20 21 22 23 24 25 26 27

S21

(d

B)

Frequency (GHz)

Gain (S21) vs. Freq (GHz), Vd = 5V, Id = 0.65A

-35

-30

-25

-20

-15

-10

-5

0

17 18 19 20 21 22 23 24 25 26 27

S11

/S2

2 (

dB

)

Frequency (GHz)

Return Loss (S11/S22) vs. Freq (GHz), Vd = 5V, Id = 0.65A

S22 (dB)

S11 (dB)




Rev. V1

MAAP-118260

6



DC-0009796


500

550

600

650

700

750

800

850

900

-5

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10 15D

rain

Cu

rren

t (m

A)

Ou

tpu

t Po

wer

(d

Bm

) /

Pow

er G

ain

(d

B)

Input Power (dBm)

Output Power (dBm), Power Gain (dB), Drain Current (mA) vs. Input Power (dBm) @ 17.70GHz, Vd = 5V, Id = 650mA

Output Power (dBm)

Power Gain (dB)

Drain Current (dBm)

500

550

600

650

700

750

800

850

900

-5

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10 15

Dra

in C

urr

ent

(mA

)

Ou

tpu

t Po

wer

(d

Bm

) /

Pow

er G

ain

(d

B)

Input Power (dBm)


Output Power (dBm)

Power Gain (dB)

Drain Current (dBm)

500

550

600

650

700

750

800

850

900

-5

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10 15

Dra

in C

urr

ent

(mA

)

Ou

tpu

t Po

wer

(d

Bm

) /

Pow

er G

ain

(d

B)

Input Power (dBm)


Output Power (dBm)

Power Gain (dB)

Drain Current (dBm)

0

5

10

15

20

25

30

35

20

22

24

26

28

30

32

34

-5 0 5 10 15 20 25 30 35

Pow

er A

dd

ed E

ffic

ien

cy (

%)

Pow

er G

ain

(d

B)

Output Power (dBm)

Power Gain (dB) and Power Added Efficiency (%) vs. Output Power (dBm) @ 17.70GHz, Vd = 5V, Id = 650mA

Power Gain (dB)

Power Added Efficiency (%)

0

5

10

15

20

25

30

35

20

22

24

26

28

30

32

34

-5 0 5 10 15 20 25 30 35

Pow

er A

dd

ed E

ffic

ien

cy (

%)

Pow

er G

ain

(d

B)

Output Power (dBm)


Power Gain (dB)


0

5

10

15

20

25

30

35

20

22

24

26

28

30

32

34

-5 0 5 10 15 20 25 30 35

Pow

er A

dd

ed E

ffic

ien

cy (

%)

Pow

er G

ain

(d

B)

Output Power (dBm)


Power Gain (dB)





Rev. V1

MAAP-118260

7



DC-0009796


500

550

600

650

700

750

800

850

900

-5

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10 15D

rain

Cu

rren

t (m

A)

Ou

tpu

t Po

wer

(d

Bm

) /

Pow

er G

ain

(d

B)

Input Power (dBm)


Output Power (dBm)

Power Gain (dB)

Drain Current (dBm)

500

550

600

650

700

750

800

850

900

-5

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10 15

Dra

in C

urr

ent

(mA

)

Ou

tpu

t Po

wer

(d

Bm

) /

Pow

er G

ain

(d

B)

Input Power (dBm)


Output Power (dBm)

Power Gain (dB)

Drain Current (dBm)

500

550

600

650

700

750

800

850

900

-5

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10 15

Dra

in C

urr

ent

(mA

)

Ou

tpu

t Po

wer

(d

Bm

) /

Pow

er G

ain

(d

B)

Input Power (dBm)


Output Power (dBm)

Power Gain (dB)

Drain Current (dBm)

0

5

10

15

20

25

30

35

20

22

24

26

28

30

32

34

-5 0 5 10 15 20 25 30 35

Pow

er A

dd

ed E

ffic

ien

cy (

%)

Pow

er G

ain

(d

B)

Output Power (dBm)


Power Gain (dB)


0

5

10

15

20

25

30

35

20

22

24

26

28

30

32

34

-5 0 5 10 15 20 25 30 35

Pow

er A

dd

ed E

ffic

ien

cy (

%)

Pow

er G

ain

(d

B)

Output Power (dBm)


Power Gain (dB)


0

5

10

15

20

25

30

35

20

22

24

26

28

30

32

34

-5 0 5 10 15 20 25 30 35

Pow

er A

dd

ed E

ffic

ien

cy (

%)

Pow

er G

ain

(d

B)

Output Power (dBm)


Power Gain (dB)





Rev. V1

MAAP-118260

8



DC-0009796


500

550

600

650

700

750

800

850

900

-5

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10 15D

rain

Cu

rren

t (m

A)

Ou

tpu

t Po

wer

(d

Bm

) /

Pow

er G

ain

(d

B)

Input Power (dBm)


Output Power (dBm)

Power Gain (dB)

Drain Current (dBm)0

5

10

15

20

25

30

35

20

22

24

26

28

30

32

34

-5 0 5 10 15 20 25 30 35

Pow

er A

dd

ed E

ffic

ien

cy (

%)

Pow

er G

ain

(d

B)

Output Power (dBm)


Power Gain (dB)


-0.5

0

0.5

1

1.5

-5 0 5 10 15 20 25 30 35

Enve

lop

e D

etec

ted

Vo

ltag

e (V

)

Output Power (dBm)

Envelope Detector Voltage (V) vs. Ouput Power, Vd = 5V, Id = 650mA

Freq = 17.70GHz

Freq = 19.16GHz

Freq = 20.62GHz

Freq = 22.08GHz

Freq = 23.54GHz

Freq = 25.00GHz

Freq = 26.50GHz

0.5

1

1.5

2

2.5

-5 0 5 10 15 20 25 30 35

Peak

Det

ecte

d V

olt

age

(V)

Output Power (dBm)

Peak Detector Voltage (V) vs. Ouput Power, Vd = 5V, Id = 650mA

Freq = 17.70GHz

Freq = 19.16GHz

Freq = 20.62GHz

Freq = 22.08GHz

Freq = 23.54GHz

Freq = 25.00GHz

Freq = 26.50GHz

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

5 10 15 20 25 30

IMD

3 (

dB

m)

SCL Output Power (dBm)

3rd Order Intermodulation (dBm) vs. SCL Output Power,Vd = 5V, Id = 650mA

Freq = 17.70GHzFreq = 19.16GHzFreq = 20.62GHzFreq = 22.08GHzFreq = 23.54GHzFreq = 25.00GHzFreq = 26.50GHz




Rev. V1

MAAP-118260

9



DC-0009796

Typical Performance Curves: VD = 5 V, IDQ = 0.65A, VG = -1.05 ~ -0.85 V, TA = -40C ~ +85°C

22

24

26

28

30

32

34

36

17 19 21 23 25 27

P1

dB

(d

Bm

)

Frequency (GHz)

P1dB (dBm) vs. Frequency (GHz), Vd = 5V, Id = 650mA

Temp = +85°C

Temp = +25°C

Temp = -40°C

22

24

26

28

30

32

34

36

17 19 21 23 25 27

P3

dB

(d

Bm

)

Frequency (GHz)

P3dB (dBm) vs. Frequency (GHz), Vd = 5V, Id = 650mA

Temp = +85°C

Temp = +25°C

Temp = -40°C

22

24

26

28

30

32

34

36

17 19 21 23 25 27

Psat

(d

Bm

)

Frequency (GHz)

Psat (dBm) vs. Frequency (GHz), Vd = 5V, Id = 650mA

Temp = +85°C

Temp = +25°C

Temp = -40°C

-30

-25

-20

-15

-10

-5

0

17 19 21 23 25 27

S22

(d

B)

Frequency (GHz)

S22 (dB) vs. Freq (GHz), Vd = 5V, Id = 0.65A

Temp = +85°C

Temp = +25°C

Temp = -40°C

-30

-25

-20

-15

-10

-5

0

17 19 21 23 25 27

S11

(d

B)

Frequency (GHz)


Temp = +85°C

Temp = +25°C

Temp = -40°C

18

20

22

24

26

28

30

32

34

36

38

17 19 21 23 25 27

S21

(d

B)

Frequency (GHz)


Temp = +85°C

Temp = +25°C

Temp = -40°C




Rev. V1

MAAP-118260

10



DC-0009796

Typical Performance Curves: VD = 5 V, IDQ = Various, VG = -0.85 ~ -1.65 V, TA = +25C

Typical Performance Curves: VD = 5 V, IDQ = 0.65A, VG = -1.05 ~ -0.85 V, TA = -40C ~ +85°C

18

20

22

24

26

28

30

32

34

14 16 18 20 22 24 26 28

S21

(d

B)

Frequency (GHz)

Gain (S21) vs. Freq (GHz), Various Bias Points

5V, 200mA 5V,300mA

5V, 400mA 5V, 500mA

5V, 600mA 5V, 640mA

5V, 650mA 5V, 700mA

-35

-30

-25

-20

-15

-10

-5

0

14 16 18 20 22 24 26 28

S11

(d

B)

Frequency (GHz)

Input Return Loss (S11) vs. Freq (GHz), Various Bias Points

5V, 750mA 5V,1000mA

5V, 1250mA 5V, 1500mA

5V, 1750mA 5V, 2000mA

5V, 2200mA 5V, 2300mA




Rev. V1

MAAP-118260

11



DC-0009796

Typical Performance Curves: VD = 5 V, IDQ = Various, VG = -0.85 ~ -1.65 V, TA = +25C

-35

-30

-25

-20

-15

-10

-5

0

14 16 18 20 22 24 26 28

S22

(d

B)

Frequency (GHz)

Output Return Loss (S22) vs. Freq (GHz), Various Bias Points

5V, 200mA 5V,300mA5V, 400mA 5V, 500mA5V, 600mA 5V, 640mA5V, 650mA 5V, 700mA

-10

-5

0

5

10

15

20

25

30

35

40

0 100 200 300 400 500 600 700 800 900

Ou

tpu

t IP

3 (

dB

m)

Drain Current (mA)

Output IP3 (dBm) vs. Drain Current (mA), Vd = 5V, Id = Various

Freq = 17.70GHz

Freq = 19.16GHz

Freq = 20.62GHz

Freq = 22.08GHz

Freq = 23.54GHz

Freq = 25.00GHz

Freq = 26.50GHz

-40

-30

-20

-10

0

10

20

30

40

0 100 200 300 400 500 600 700 800 900

Gai

n (

dB

)

Drain Current (mA)

Gain (dB) vs. Drain Current (mA), Vd = 5V, Id = Various

Freq = 17.70GHz

Freq = 19.16GHz

Freq = 20.62GHz

Freq = 22.08GHz

Freq = 23.54GHz

Freq = 25.00GHz

Freq = 26.50GHz

-30

-20

-10

0

10

20

30

40

-35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35

Ou

tpu

t IP

3 (

dB

m)

Gain (dB)

Output IP3 (dBm) vs. Gain (dB), Vd = 5V, Id = Various

Freq = 17.70GHz

Freq = 19.16GHz

Freq = 20.62GHz

Freq = 22.08GHz

Freq = 23.54GHz

Freq = 25.00GHz

Freq = 26.50GHz




Rev. V1

MAAP-118260

12



DC-0009796

Lead-Free 5 mm 24-Lead PQFN†

† Reference Application Note S2083 for lead-free solder reflow recommendations.

Meets JEDEC moisture sensitivity level 3 requirements. Plating is NiPdAu




Rev. V1

MAAP-118260

13



DC-0009796

MACOM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM")products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale.



GND N/C Power Amplifier N/CIN Pdet env 18 - 26 GHz Rev. V1 · 1 No Connection 13 Pdet_env 2 No Connection 14 No Connection 3 GND 15 GND 4 RF IN 16 RF OUT 5 GND 17 GND 6 No Connection

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