GE's Advanced Silicon Carbide Technology

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GE’s Advanced Silicon Carbide (SiC) TechnologyThe Next Revolution in Power

© 2014 General Electric Company - All rights reserved

Today, silicon-based chips

are used to manage power

in everything from portable

electronics to industrial-

scale equipment. They’re

the industry workhorse.

For high-power applications, SiC is the future

© 2014 General Electric Company - All rights reserved

This advanced technology will

allow power electronics to run

faster and more efficiently, in

a smaller package.

GE pioneered SiC technology, with research dating back more than 50 years

© 2014 General Electric Company - All rights reserved

© 2014 General Electric Company - All rights reserved

Developed by our scientists over the past ten

years, GE’s SiC is the industry’s first power

semiconductor product with a temperature

rating of 200oC. The fabrication process in our

cleanroom involves almost 300 steps.

© 2014 General Electric Company - All rights reserved

A view inside the power electronics box enhanced by GE’s SiC technology

SiC Semiconductors

Filter Capacitorsand Magnetics

Control Electronics

DC Capacitors

Packaging andThermal

Management

The next revolution in power

Next-Generation Semiconductors

© 2014 General Electric Company - All rights reserved

SiC can take conventional transistors to new heights:

• Higher voltages • Higher temperatures • Higher frequency• Reduced power loss• Fewer, smaller capacitors and inductors• Smaller, simpler thermal management