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Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party's intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. 2003 FUJITSU LIMITED Printed in Japan FUJITSU LIMITED http://edevice.fujitsu.com/ Japan Marketing Div., Electronic Devices Shinjyuku Dai-ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721 Tel : +81-3-5322-3383 Fax : +81-3-5322-3386 North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94088-3470, USA Tel : +1-408-737-5600 Fax : +1-408-737-5999 http://www.fma.fujitsu.com/ Europe FRAM Centre FUJITSU MICROELECTRONICS EUROPE GmbH 105 rue Jules Guesde, 92300 Levallois Perret, France Tel : +33-1-5521-0040 Fax : +33-1-5521-0041 E-mail: [email protected] Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. #05-08, 151 Lorong Chuan, New Tech Park, Singapore 556741 Tel : +65-6281-0770 Fax : +65-6281-0220 http://www.fmal.fujitsu.com/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 1702 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu, Seoul 135-280, Korea Tel : +02-3484-7100 Fax : +02-3484-7111 http://www.fmk.fujitsu.com/ AD05-00024-7E October, 2003 FRAM is a registered trademark of Ramtron International Corporation. FUJITSU SEMICONDUCTOR Other company names and brand names are the trademarks or registered trademarks of their respective owners.
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Page 1: FUJITSU SEMICONDUCTOR AD05-00024-7E October, 2003 · 2004. 10. 1. · Customers are advised to consult with FUJITSU sales representatives before ordering. ... 1.00E-00 1.00E-01 1.00E-02

Specifications are subject to change without notice. For further information please contact each office.

All Rights Reserved.The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party's intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.

If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.

2003 FUJITSU LIMITED Printed in Japan

FUJITSU LIMITEDhttp://edevice.fujitsu.com/

Japan Marketing Div., Electronic DevicesShinjyuku Dai-ichi Seimei Bldg.7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721Tel : +81-3-5322-3383 Fax : +81-3-5322-3386

North and South AmericaFUJITSU MICROELECTRONICSAMERICA, INC.1250 E. Arques Avenue, M/S 333Sunnyvale, CA 94088-3470, USATel : +1-408-737-5600Fax : +1-408-737-5999http://www.fma.fujitsu.com/

EuropeFRAM CentreFUJITSU MICROELECTRONICSEUROPE GmbH105 rue Jules Guesde, 92300 Levallois Perret, FranceTel : +33-1-5521-0040Fax : +33-1-5521-0041E-mail: [email protected]

Asia PacificFUJITSU MICROELECTRONICSASIA PTE LTD.#05-08, 151 Lorong Chuan,New Tech Park,Singapore 556741Tel : +65-6281-0770Fax : +65-6281-0220http://www.fmal.fujitsu.com/

KoreaFUJITSU MICROELECTRONICSKOREA LTD.1702 KOSMO TOWER,1002 Daechi-Dong,Kangnam-Gu, Seoul135-280, KoreaTel : +02-3484-7100Fax : +02-3484-7111http://www.fmk.fujitsu.com/

AD05-00024-7E October, 2003

FRAM is a registered trademark of Ramtron International Corporation.

FUJITSU SEMICONDUCTOR

Other company names and brand names are the trademarks or registered trademarks of their respective owners.

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Expanding the Use of FRAM Smart Cards Your Passport to the Net!

FRAM FOR SMART CARDSFRAM (Ferroelectric RAM) is a nonvolatile memory, which uses ferroelectric

film as a capacitor for data storing.

The outstanding features: low power consumption, fast rewrite speed and

tamper resistance, are well suited for smart cards and mobile devices, which

requires extremely low power consumption and high level of security.

Based on advanced technology and production know-how, Fujitsu became

the world's first to successfully incorporate FRAM in microcomputers and to

produce in mass volume. And many successful installations for various

applications, such as transportation, government , company and amusement

cards can be already seen.

FRAM is a registered trademark of Ramtron International Corporation.

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What is Ferroelectric material?PZT (Pb (ZrTi)O3) material which has a perovskite-type structure (ABO3), is commonly used as a typical ferroelectric material. An electric polarization of PZT (shift up/down of Zr/Ti atom) remains after applying and removing an external electric field, from which a nonvolatile property results. As a result of this, the power consumption required for data storage is very low.

Crystal structure of Ferroelectric material

3 4

: Pb

: O

: Zr / Ti

Electric field

Comparison of FRAM with other memory products

Write Time

Energy Consumption

Endurance

FRAM write cycle time is short enough to be ignored. Baud-rate limits the transaction time. EEPROM write cycle time limits the transaction time.

Writing time of 1 byte data on FRAM is 1/30,000 of EEPROM.

Energy consumption of FRAM is 1/400 or less of EEPROM.

Endurance of FRAM is 100,000 times of EEPROM.

FRAM current consumption is estimated for low power smart card application.

1.00E-00

1.00E-01

1.00E-02

1.00E-03

1.00E-04

1.00E-05

1.00E-06

1.00E-071 10 100

Data size (bit)

Energy consumption at 64-byte write cycle

Technology

1000 10000

Writ

e T

ime

(sec

.)E

ner

gy

con

sum

pti

on

(m

W-m

s)

Baud-rate:106Kbps212Kbps424Kbps848Kbps

EEPROM: 5ms/16Bytes=312500ns/Byte>Baud-rate

FRAM: 180ns/Byte<<Baud-rate

10,000,000,000

1,000,000,000

100,000,000

10,000,000

1,000,000

100,000

10,000

1,000

100

10

1

0.1

0.01

0.0010 2 4 6 8 10 12

Life Cycle (Year)

Max

imu

m A

cces

s E

nd

ura

nce

(/m

inu

te)

1.E+12

1.E+11

1.E+10

1.E+05

1Byt

e

FRAM Read/Write Endurance

EEPROM Erase/Write/Read Endurance

Features of FRAM Currently, EEPROM is mainly used for data memory in smart cards. However, FRAM is superior to EEPROM in terms of speed, power consumption, and endurance in write mode. Compared with EEPROM, Fujitsu FRAM has the following features: 1. 1/30,000 high-speed write time 2. 1/400 or less power consumption 3. 100,000 times or more rewrite capability (count)

Notes: *1: 512K × 8bit *2: 2M × 8bit *3: 8K × 8bit *4: 1M × 8bit *5: 8K × 8bit

Characteristics of FRAM (Comparison with EEPROM)

SRAM*1 DRAM*2 EEPROM*3 FLASH*4 FRAM*5

Memory type Volatile back-up Volatile Non-volatile Non-volatile Non-volatile

Cell structure 6T 1T/1C 2T 1T

1T/1C 2T/2C

Read cycle (ns) 12 70 200 70 110

Internal write voltage (V) 3.3 3.3

20 12 3.3

(supply voltage 3.3V) (supply voltage 3.3V)

Write cycle 12ns 70ns 3ms 1 sec. 110ns

Data write Overwrite Overwrite Erase + Write Erase + Write Overwrite

Data erase

Unnecessary Unnecessary

Byte SectorUnnecessary

(64 byte page) (8K/16K/32K/64K)

Endurance ∞ ∞ 1E5 1E5 1E10 to 1E12

Stand-by current (µA) 7 1,000 20 5 5

Read operation current (mA) 40 80 5 12 4

Write operation current (mA) 40 80 8 35 4

1000

100

10

1

0.1

0.01

0.5µm, 5V, FRAM0.5µm, 3.3V, FRAM

0.35µm, 3.3V, FRAM

0.2mW-ms

EEPROM

FRAM

0.133mW-ms

0.057mW-ms

What is FRAM?FRAM (ferroelectric random access memory) is a nonvolatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, FRAM features high speed access, high endurance in write mode, low power consumption, and excellent tamper resistance. It is therefore ideal for use in smart cards, mobile phones and other devices, which requires high security and low power consumption.

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MB89R076 LSI for contactless smart cards The MB89R076 is an LSI for contactless smart cards, in which a 4K bytes FRAM is embedded in an 8-bit microcontroller. The LSI also features an encryption circuit for preventing misuse via counterfeit or tampering, as well as an RF circuit, which is an essential element of contactless smart cards, a power source circuit, and other features.

MB89R116 LSI for RFID transpondersThe MB89R116 is a product complying with ISO/IEC15693, which is the international standard for vicinity transponders. Compared with the conventional EEPROM-based RFID transponders, this device is equipped with high-capacity 2K bytes FRAM that can store large amount of data in distribution channels and can read/write the product information.

MB89R111 LSI for contactless memory cardsThe MB89R111 is an LSI for contactless memory cards with 2K bytes FRAM memory. Well matched for various ID cards and RFID tags.

HIFERRON Series Multi-application smart card LSI The HIFERRON series is an LSI for multi-purpose card in which Java OS and 64K bytes of FRAM are embedded with a 32-bit Fujitsu FR RISC processor. By incorporating FRAM and an encryption circuit (DES, RSA or ECC), multiple applications can be executed at high speed and with high security. It is truly an LSI that meets the needs of the e-commerce era.

Features• 8 bit CPU• 4KByte FRAM• 512 Byte SRAM• 32KByte Mask ROM• Contactless Interface: ISO14443 Type B • Target Applications: Student/employee ID card, electronic money, etc.• Encryption: DES (Data Encryption Standard)

Features• 2KByte FRAM• Operating Frequency: 13.56MHz• Contactless Interface: ISO15693• Applications: Inventory management, supply chain management, anti-theft• Operating Distance: 50cm or longer (depending on the antenna and other factors)• With anti-collision algorithm

Photo is MB94R202

Features• 2KByte FRAM• Operating Frequency: 13.56MHz• Contactless Interface: ISO14443 Type B• With anti-collision algorithm• Target Applications: Access control, inventory management, production/distribution

management, etc.• Operating Distance: 10cm

Features• 32 bit RISC CPU• 32K, 64KByte FRAM• 96K-128KByte Mask ROM• 4KByte SRAM• DES, RSA, or ECC (F2m)• ISO7816, T=0, 1 contact interface• Contactless Interface: ISO14443 Type B• Target Applications: Government card, amusement card, electronic money, etc.• OS Supported: Native and Java Card v2.2