From ferromagnetic to non-magnetic semiconductor spintronics: Spin-injection Hall effect Tomas Jungwirth University of Nottingham Bryan Gallagher, Richard Campion, Kevin Edmonds, Andrew Rushforth, et al. Hitachi Cambridge, Univ. Cambridge Jorg Wunderlich, Andrew Irvine, Byonguk Park, et al. Institute of Physics ASCR Jairo Sinova, Karel Výborný, Jan Zemen, Jan Mašek, Alexander Shick, František Máca, Jorg Wunderlich, Vít Novák, Kamil Olejník, et al. Texas A&M University Jairo Sinova, Liviu Zarbo, et al.
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From ferromagnetic to non-magnetic semiconductor spintronics: Spin-injection Hall effect
From ferromagnetic to non-magnetic semiconductor spintronics: Spin-injection Hall effect. Tom as Jungwirth. Universit y of Nottingham Bryan Gallagher, Richard Campion, Kevin Edmonds , Andrew Rushforth, et al. Institute of Physics ASCR - PowerPoint PPT Presentation
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From ferromagnetic to non-magnetic semiconductor spintronics: Spin-injection Hall effect
Tomas Jungwirth
University of Nottingham Bryan Gallagher, Richard Campion, Kevin
Edmonds, Andrew Rushforth, et al.
Hitachi Cambridge, Univ. Cambridge Jorg Wunderlich, Andrew Irvine, Byonguk Park, et al.
Institute of Physics ASCRJairo Sinova, Karel Výborný, Jan Zemen, Jan Mašek, Alexander Shick, František Máca,
Jorg Wunderlich, Vít Novák, Kamil Olejník, et al.
Texas A&M University
Jairo Sinova, Liviu Zarbo, et al.
Inductive read elements Magnetoresistive read elements
Basic studies of spin-charge dynamics and Hall effect in non-magnetic systems with SO coupling Spin-photovoltaic cell: polarimeter on a SC chip requiring no magnetic elements, external magnetic field, or bias; unconventional laser displacement sensor with the resolution defined by the spin-precession length built in the SC
SIHE can be tuned electrically by external gate and combined with electrical spin- injection from a ferromagnet (e.g. Fe/Ga(Mn)As structures)
Conclusions
SIHE: high-T SO only spintronics in non-magnetic systems
Ohno et al. Nature’99, others
Crooker et al. JAP’07, others Magneto-optical imagingnon-destructive
lacks nano-scale resolution and only an optical lab tool
MR Ferromagnet electrical
requires semiconductor/magnet hybrid design & B-field to orient the FM spin-LED all-semiconductor
requires further conversion of emitted light to electrical signal
SIHE vs other spin-detection tools in semiconductors
Spin-injection Hall effect
non-destructive
electrical
100-10nm resolution with current lithography
in situ directly along the SC channel & all-SC requiring no magnetic elements in the structure or B-field