From Black-Body Radiation to Next-Generation Electronics C.T. Liu 2014.11.19
From Black-Body Radiation to Next-Generation Electronics
C.T. Liu 2014.11.19
Contents:
1. From Black-Body Radiation to Transistors
2. Semiconductor Technologies
3. Display Technologies
4. Lighting Technologies
5. 3D Image Systems
6. Conclusion
Planck discovered the empirically fitting function, and constructed a physical derivation of this law. In 1901, he expressed ϵ = h ν . h is now known as Planck's constant. Ultimately, Planck's law of black-body radiation contributed to Einstein's concept of quanta of light,
which became the fundamental basis for the development of quantum mechanics.
From Black-Body Radiation to Quantum Mechanics
From Quantum Mechanics to Transistors
Thickness Variation
(a)
(b)
(c)
Poly-Si Gate
Si Substrate
STI Isolation
<100>
<111>
2.5 nm 3.2 nm
4.2 nm
1.8 nm
(d)
<111>
4.2 nm
2 nm
(e)
3 nm 2.5 nm
Interface imperfect bonds can be studied with high-resolution XPS.
RTO
RT-N2O
Z.H. Lu, “Synchrotron and Conventional
Photoemission Studies of Oxides and N2O
Oxynitrides,” in “Fundamental Aspects of Ultrathin
Dielectrics on Si-Based Devices,” edited by E.
Garfunkel et al., Kluwer Academic Publishers,
Netherlands, 1998, p.49.
Inte
nsity (
arb
. u
nit)
Binding Energy (eV)
Sub-Oxide Structures
1. N-1s binding energy ~ 397.6eV,
same as Si3N4.
2. Longer oxidation increases
the binding energy toward
398.4 eV of Six=N-O3-x.
3. Wet-oxidation also shifts the binding
energy to 398.4 eV.
397
397.5
398
398.5
399
0 1 2 3 4 5
Distance above Si/SiO2 Interface (nm)
N-1
s B
indi
ng E
nerg
y (e
V)
tox= 5nm, 800oC, 2x1014/cm2 N+ I/I
Six=N-O3-x
N Si3
Nitrogen Binding Energy
Substrate Defects
A) After S/D I/I, before RTA
B) After 1050oC 10s RTA
a-Si
0.16mm
C) Top-Plan View TEM S/D
S/D
Channel + Spacers 10 nm
D) XTEM along the channel to S/D
D
SF
SF
SF
[110] projection
(111) (111)
Interconnect Challenges
1975 1980 1985 1990 1995 2000
1,000
100
10
1
0.1
0.01
0.001
Si MOSFET
Si Bipolar
GaAs MESFET
GaAs HBT
GaAs HEMT
SiGe Bipolar
InP HBT
InP HEMT
2005
Cu
toff F
req
ue
ncy (
in G
Hz)
1970
OC-768
40 Gbps
OC-192
10 Gbps
OC- 48
2.5 Gbps
OC- 12
622Mbps
* The cutoff frequency of the device needs to be at least 4 times
higher than the clock rate.
Communication IC Technology Roadmap
Time
High-Speed Technologies
Si MOS
Parameters for Device Breakdown: • bandgap energy • doping density - short-channel FETs • dielectric breakdown - short-channel MOS • space-charge limiting current - collector current of BJTs
InP HBT Device SEMs
250
200
150
100
50
0
GH
z
12mA 10 8 6 4 2 0 Ic
ft ~ 144 GHz @ 4.83 mA
fmax~ 197 GHz @ 4.83 mA
X4Y2
250
200
150
100
50
0
GH
z
12mA 10 8 6 4 2 0 Ic
ft ~ 136 GHz @ 5.28 mA
fmax ~ 154 GHz @ 5.28 mA
X3Y2
ft fmax Plot Lot 51, wafer 203, RF tester 1.6 x 3.4 ------- ft ------- fmax
100nA
1µA
10µA
100µA
1mA
10mA
1.0V 0.8 0.6 0.4 0.2 0.0 Vbe
70
60
50
40
30
20
10
0
Be
ta
6
5
4
3
2
1
0
I C [m
A]
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
V CE
[V]
DC degradation after RF excitation Lot 51, wafer 203, RF tester 1.6 x 3.4 ------- before ------- after
InP DHBT --- RF Performance
40Gb/s Driver Amplifier
Output up to 4.5V (5V simulated)
Bias for this measurement: Vee=-5.3V, I=190 mA Vcc1=0.6V Vcc2=2.5V, I=50 mA Very low power consumption: 1.2 W!!
• most of jitter caused by 40 Gb/s source • rise time @ 40Gb/s limited by source, and on-wafer measurement: cables and probes
40 Gb/s
20 Gb/s Very compact circuit size:
850x850 mm
High Gain-BW Distributed Amplifier for 40Gbps
-30
-20
-10
0
10
20
0 20 40 60 80 100
S-p
aram
eter
s [d
B]
Frequency [GHZ]
S11
S21
S22
17 dB
70GHz
Gain=17 dB
BW>70 GHz
GBW>500 GHz
(record GBW for single-stage DA)
Size:0.7x2mm
Metal Ta2O5 MIM Capacitor
TiN
10-nm
Ta2O5
W-plug (WN2)
MTJ
4 – 5 ML MgO
MRAM: Spintronics
free layer
capping layer
tunneling MgO
pinned layer
seed layer
Key Tools:
multilayer PVD cluster
damage-free etcher with protection capping
Spin-Torque Transfer (STT)
Field or Current
AP P P AP
free pinned
torque
Ref: Magnetic Memory
(Cambridge University Press)
free pinned
Contents:
1. From Black-Body Radiation to Transistors
2. Semiconductor Technologies
3. Display Technologies
4. Lighting Technologies
5. 3D Image Systems
6. Conclusion
Generation Migration in TFT-LCD Mother Glass size grew 1.5 times every 1.5 years
TFT LCD Generation Migration
100.0
1000.0
10000.0
1990 1992 1994 1996 1998 2000 2002 2004 2006
Year
Gla
ss A
rea
(k-m
mxm
m)
G3 550x670
G5 1100x1300
G6 1500x1850
G7.5 1950x2250
G8 2160x2460
G1 300x400
G2 370x470
G3.5 600x720
G6
G8 Relative Glass Size in Each Generation
G5 1m x 1m
G4
G3
G2
G7.5 2m x 2m
Revolution Waves of TFT LCD
’91 ’98 ’02 Notebook Monitor TV
1st Wave: Product Introduction – Make The World Flat!
G5 G2 G3 G3.5 G4 G1 G7 G6
’96 ’97 ’04 ’05 ’91 ’94 ’00 ’02 ’98 ’95 ’99 ’06
G7.5
2nd Wave: Performance Enrichment – Make The World Gorgeous!
1%
10%
Power Utilization Material Utilization
3rd Wave: Power & Material Efficiency – Make The World Green!
4th Wave: Functions for Human Interface – Make The World No Gap!
Importance of High Contrast Ratio
Contrast Ratio Improvement can increase dark color performance.
Advanced MVA-mobile Technology
AMVA-mobile Conventional Features
• Wide Viewing Angle
(160o / 160o)
• Low Color Washout
• High Contrast Ratio
(2100:1)
Product Applications
• Mobile Phone
• DSC
• Mobile TV
Under shadow 30000 Lux
Direct sunlight 80000 Lux
ATR-MVA TMR+TN/WV
Sunlight Readable Display
Advanced Simulated Pulsed Driving
ASPD-mobile Conventional
Features
Fast response time to reduce motion blur
(4ms Grey to Grey / 8ms MPRT)
Image Processing for Vivid Picture Saturation Enhancement
Blue
Green
Red
original color vivid color
white point
Image Gamut Extension
L
h C
a*
b*
[R]
[Y]
[G]
[C]
[B]
[M]
[RY][YG]
[GC]
[CB][BM]
[MR]
a*
b*
a*
b*
[R]
[Y]
[G]
[C]
[B]
[M]
[RY][YG]
[GC]
[CB][BM]
[MR]
• Hue Division – Outline panel's color characteristics – Find image gamut boundaries – Choose certain hue pages to decide image color templates
Display's Color Gamut Hue Pages Hue Division
High Dynamic Contrast
Convolution Process Measure PSF (Point Spread Function) Calculate LED and LCD Control Signals.
PSF - Center
PSF - Corner
PSF - Side
High Dynamic Contrast
Lmax = 418 cd/m2
Lmin = 0.04 cd/m2
CR = 418 / 0.04 = 10,450
Current = 9.5 A
Voltage = 10.95 V
Power Saving = 58% = 1-(9.5 × 10.95) / 245.28
* LED B/L Full ON = 22.4A × 10.95V = 245.28 W
CABC Function
CABC Structure (saving power 50%)
CABC
Remark ’08 ’07 H2 ’07 H1 Technology
CABC FPGA Proto type
Integrated IC cut1 ’07 1Q
’07 3Q ’07 4Q
MP
•Purpose
•To detect the image content and keep the same image quality with dimming.
•To reduce power consumption 50% in darker image.
dark
area
dark
area
dark
area
Brightest
Pixel
Mo
du
latio
n f
orc
e
gray level gray level gray level
No
. o
f P
ixe
l
bla
ck
ra
tio
Ma
x.
inte
ns
ity
output original
Luminance
output original
Luminance
output original
Luminance
No
. o
f P
ixe
l
No
. o
f P
ixe
l
input gray level
ou
tpu
t g
ray le
ve
l
input gray level
ou
tpu
t g
ray le
ve
l
input gray level
ou
tpu
t g
ray le
ve
l
dark
area
dark
area
dark
area
Brightest
Pixel
Mo
du
latio
n f
orc
e
gray level gray level gray level
No
. o
f P
ixe
l
bla
ck
ra
tio
Ma
x.
inte
ns
ity
output original
Luminance
output original
Luminance
output original
Luminance
No
. o
f P
ixe
l
No
. o
f P
ixe
l
input gray level
ou
tpu
t g
ray le
ve
l
input gray level
ou
tpu
t g
ray le
ve
l
input gray level
ou
tpu
t g
ray le
ve
l
Image information
Back light Gain
Gamma curve
Original
CABC
C.i.1
Dynamic Backlight + Dynamic Contrast + Dynamic Gamma
Improve contrast and detail Lower Power consumption
Contrast Ratio: 300 Contrast Ratio: 700 Power saving 50%
Original
Original
CABC
CABC
C.i.1
Slim & Light
0.9mm slim boarder (2.2”) 0.69mm mobile module (1.9”)
Features
•Possesses the slim border of 0.9mm
on both the right and left sides
•The upper side border width of
merely 1.2mm
•Be able to increase the active area
and enhance the image sleekness
Features
•Implement the latest glass thinning
technology and shrink the thickness
of related components
•13% thinner than the thickness of a
credit card
•Weight of 2.2 grams
•400-nit high brightness
•Accomplish a multitude of features -
light, slim, elegant and bright
Precision Machinery Technology -- integrated micro-optics, molding, thermal
Roll-to-Roll 3mm Direct Printing Patterning Technology Revolution
Replace 7 process equipment with 1
Increase material usage from 5% to 95%
1-step
fine-line direct printing
Future Now
7-step process
film deposition
photo resist coating
resist baking
photo exposure
resist development
film etching
resist stripping
>>>
>>>
>>>
>>>
>>>
>>>
>>>
>>>
Industry status: sheet process, > 30mm
Komori-ITRI: roll-to-roll process, 3mm
3mm
30mm
Contents:
1. From Black-Body Radiation to Transistors
2. Semiconductor Technologies
3. Display Technologies
4. Lighting Technologies
5. 3D Image Systems
6. Conclusion
OLED Lighting Features
LED Spectra
Wavelength (nm)
Florescent Spectra
Wavelength (nm)
Simple: surface light source
Innovative: thin and light
Harmless: UV-less, IR-less, Hg-free
Truthful: closest to natural light
Beautiful: high color rendering
Comfortable: diffusive, non-glare
Power & material saving
Bendable
Very Thin 0.3 mm thick
Very Light 0.05 g/cm2
Wavelength (nm)
OLED Spectra
customized
transparent
flexible luminaire designs
Interior designs
See through it
Audi OLED desk lamps
flexible OLED lighting large area and transparent
curved
3D
lamps
Contents:
1. From Black-Body Radiation to Transistors
2. Semiconductor Technologies
3. Display Technologies
4. Lighting Technologies
5. 3D Image Systems
6. Conclusion
Capture the World in 3D
Object Reconstruction – Handheld 3D Scanner
Comparisons of 3D Scanners
3D Systems
Sense
Resolution 1 mm
Accuracy 0.9 mm
Measurement
Rate < 5 fps
Working
Distance 35 ~300cm
Scan Area 57.5度
Weight 0.38 kg
Color Yes
Light Source IR Laser
Price US 419
電光所 (Target)
0.5~1 mm Resolution
0.1mm Accuracy
10 fps Measurement
Rate
35 ~ 65cm Working
Distance
45度 Scan Area
< 1.3kg Weight
Yes Color
IR LED Light Source
Price
Google I/O 2014/6/26 : https://www.google.com/events/io/schedule/session/f47f19a5-63b9-e311-b297-00155d5066d7
Indoor Space Reconstruction - Google
Tango project:
stereo camera combined with tablets and smartphones
Staircase reconstruction
Room reconstruction
• Stage 1: On-Site Control
From On-Site Control to Cloud Control
• Stage 2: Cloud Control
on-board with Intel 4-Core i7-3612QE, 2.1 GHz image process、SLAM、autopilot
image process、SLAM Flight path setting autopilot
Rendering Flight path control
Flight path control
System Operation - Initialization
• Detect environment complexity • Initialize position
① ②
• Assign flight path patterns (eq., 之) from learning database
System Operation - Scanning
3D modeling in cloud, real-time adjusting flight path
(replace loop closure functions)
RGB+IR Reflection Detection
SLAM/PTAM: IMU
Visual odometry
Data Fusion Filter
3D Modelling (space + object)
Localization + Obstacle
Detection
Flight Control
Hardware: MAV
• Ascending Technologies (Germany), NTD 50k: on-board with Intel 4-Core i7-3612QE, 2.1 GHz for autopilot
• Parrot AR. Drone 2.0 (France), NTD 15k: iPod and android have App for easy controls
• 雷虎科技 (TW) : carrying capacity 200g
• GETOP (TW) : carrying capacity 4.5kg
including camera
MAV: micro air vehicle or micro aerial vehicle
Summary
1. It is a very exciting journey to do research.
2. From black-body radiation (1901) to next-generation electronics (2020-2050), we continue to explore amazing sciences and technologies.
3. Many frontier technologies will be in production 20 years from now and change our thinking completely.