Journal Pre-proofs Fracture Surface Analysis and Quantitative Characterization of Gallium Ar- senide III-V Semiconductors using Fractography Anthony Moulins, Roberto Dugnani, Ricardo J Zednik PII: S1350-6307(21)00101-1 DOI: https://doi.org/10.1016/j.engfailanal.2021.105313 Reference: EFA 105313 To appear in: Engineering Failure Analysis Received Date: 2 September 2020 Revised Date: 9 February 2021 Accepted Date: 9 February 2021 Please cite this article as: Moulins, A., Dugnani, R., Zednik, R.J., Fracture Surface Analysis and Quantitative Characterization of Gallium Arsenide III-V Semiconductors using Fractography, Engineering Failure Analysis (2021), doi: https://doi.org/10.1016/j.engfailanal.2021.105313 This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. © 2021 Elsevier Ltd. All rights reserved. Authors' accepted manuscript. Article published in Engineering Failure Analysis, Volume 123, May 2021, 105313 The final publication is available at https://doi.org/10.1016/j.engfailanal.2021.105313 © 2021. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
Fracture Surface Analysis and Quantitative Characterization of Gallium Arsenide III-V Semiconductors using Fractography
May 21, 2023
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