This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Formation, Morphology and Optical Properties of SiC Nanopowder
T. Nychyporuk 1, a, O. Marty 2, b, J.M. Bluet 1, c, V. Lysenko 1, d, R. Perrin 1, e, G. Guillot 1, f and D. Barbier 1, g
1 Materials Physics Laboratory (LPM), CNRS UMR-5511, INSA de Lyon, 7, av. Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne, France
2 Laboratory on Electronics, Nanotechnologies, Sensors (LENAC), Claude Bernard University of Lyon, Bat. Brillouin, 8, André-Marie Ampère Str., 69622 Villeurbanne, France
All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of TTP,www.ttp.net. (ID: 134.214.84.38, SCD Doc' INSA - INSA de Lyon, Villeurbanne, France-27/04/14,17:32:45)
be observed. Two kinds of nanoparticles are mainly present. Firstly, a large single porous SiC
nanoparticle (~ 30 nm in diameter) is shown on Fig. 2-a). Being clearly distinguishable, a porous
structure is quite comparable with previously observed single porous silicon nanoparticles which
have a fractal structure [10]. Secondly, small SiC single nanoparticle (~ 4 nm in diameter) shown on
Fig. 2-b) are also present in the nanopowder mixture and exhibits a clear crystalline nature. A low
temperature PL spectrum obtained on the back side of the original bulk 4H-SiC substrate is shown
on Fig. 3. As a 244 nm wavelength was used, the excitation mainly occurs in the polycrystalline
3C-SiC layer due to the high absorption coefficient of SiC at this wavelength. Consequently the PL
spectrum is dominated by (i) nitrogen bound exciton-phonon replicas and (ii) peaks corresponding
to the N-Al donor-acceptor pairs (DAP) in 3C-SiC. The 4H N-Al DAP band emerges slightly at
480 nm. In Figure 4, a low temperature PL spectrum of the SiC nanopowder containing mainly 4H
polytype and a small amount of 3C polytype (less than 5%) is compared to the PL spectrum of the
original bulk SiC substrate. A broad asymmetric peak corresponding to the SiC nanopowder is
observed. It is centred at 663 nm (1.87 eV) and extends all over the visible range from UV (400 nm)
to near infrared (900 nm). As it can be clearly seen in the figure, the PL signal obtained from the
nanopowder is really huge. Its integrated PL intensity is 190 times higher than the signal from the
bulk crystalline substrate. A similar PL signal was also observed under excitation of the
nanopowder with 514.5 nm line of an argon laser. The dominant red luminescence may be due to
a) b)
Figure 2 : High resolution TEM photographs of single large porous (a) and single small
crystalline (b) SiC nanoparticles constituting the SiC nanopowder.
500
nm Figure 1 : TEM picture of the SiC nanopowder
nm
764 Silicon Carbide and Related Materials 2005
an amorphous part of the SiC nanopowder as
proposed by Kassiba et al. [11]. Even if
crystalline nanoparticles are observed by
TEM, the presence of an amorphous sheet
around them or around the nanoparticle
interconnections in the nano-clusters and/or
in the large porous nanoparticles can be
responsible for the obtained intense PL
signal. The high value of the amorphous-like
specific surface in the nanoporous powder
can easily explain the observed high
luminescence intensity. The large width of
the PL peak is due to the broad distribution
of electronic states related to the amorphous
low-dimensional nanoparticles. However,
besides this broad intensive band, a small
peak centered at 358 nm (3.46 eV) can be
also observed. Spectral position of this peak is found to be above the 4H SiC band gap. Therefore, it
can be attributed to the quantum confinement in the 4H-SiC nanoparticles present in the
nanopowder mixture.
In Figure 5, the PL spectra of nanoporous SiC and Si as well as of SiC nanopowder are
compared. Firstly, the same intensive red luminescence band is clearly observed from these three
different nanostructured materials. This experimental fact leads us to put forward an hypothesis of a
similar electronic mechanism responsible for such PL spectra in the nanoporous IV-IV
semiconductors – radiative states related to the amorphous-like specific surface of these
nanostructures, for example. The second noticeable point is the asymmetric shape of this
luminescence band in the case of SiC nanopowder. Indeed, a shoulder at the UV wing of the
spectrum extended from 550 nm down to 400 nm can be easily distinguished. This part of the PL
spectrum may be, for example, (i) due to quantum confinement or (ii) due to some surface states
present in spatially separated individual 3C-SiC nanoparticles. The hypothesis of the quantum
confinement in 3C nanoparticles is consistent with the possible interpretation of the 358 nm peak
(quantum confinement in the individual and spatially separated 4H-SiC nanoparticles) discussed
above. A similar smaller peak is also observed in the bulk nanoporous SiC layer. However, (i) its
intensity is lower and (ii) its energy is closer to the energy gap of the bulk crystalline material.
4000 5000 6000 7000 80000
2
4
6
8
10
12
14
16
18
PL
Inte
nsity
(a.
u.)
Wavelength (Å)
4H N-AlDAP
N-BE in 3C3C N-Al
DAP
4000 5000 6000 7000 80000
2
4
6
8
10
12
14
16
18
PL
Inte
nsity
(a.
u.)
Wavelength (Å)
4H N-AlDAP
N-BE in 3C3C N-Al
DAP
Figure 3 : Low temperature PL spectrum of the
original n+-type 4H-SiC substrate.
Figure 4 : Low temperature PL spectra of the
nanopowder and of the bulk SiC substrate
(notice that the latter is multiplied by 10).
3000 4000 5000 6000 7000 8000 90000
200
400
600
800
1000
1200
1400
1600 Nanoparticles
Bulkx10
PL
Inte
nsi
ty (
a.u
.)
Wavelength (Å)
Figure 5 : Low temperature PL for
nanoporous SiC (diamonds), nanoporous Si
(down triangles) and SiC nanopowder
(circles). The spectra are normalized for
easier comparison. A zoom in the UV
range is presented in the upper left corner.
3000 4000 5000 6000 7000 8000 90000
250
500
750
1000
1250
1500
1750
PL
In
ten
sity
(a
.u.)
Wavelength (Å)
3250 3500 3750 4000
020406080
100120
3000 4000 5000 6000 7000 8000 90000
250
500
750
1000
1250
1500
1750
PL
In
ten
sity
(a
.u.)
Wavelength (Å)
3250 3500 3750 4000
020406080
100120
Materials Science Forum Vols. 527-529 765
Considering that this small peak may be due to recombination of excitons confined in the
nanoparticles, it is logical to find it to be (i) smaller and (ii) red-shifted in comparison with the peak
corresponding to the SiC nanopowder because (i) of the smaller PL quantum issue and (ii) of the less
efficient confinement in the case of the bulk nanoporous material in which numerous
interconnections between the nanoparticles broking down 3D confinement of photogenerated
excitons are present.
Conclusion
Large nanoporous and small crystalline SiC nanoparticles non-embedded in any matrix and
constituting a nanopowder mixture were obtained from grinding of bulk nanoporous SiC. The
resulting nanopowder contains (i) numerous isolated, (ii) slightly interconnected nanoparticles of
different sizes as well as (iii) big nano-clusters. Our photoluminescence analysis of the nanopowder
reveals the presence of two photoluminescence bands: (i) intense broad red band attributed to the
nanoparticle surface states and (ii) small UV band which may be related to quantum confinement in
4H SiC nanoparticles. Nevertheless the UV band could also be attributed to oxide at particle surface
for instance. Consequently, beyond these first results, further experiments will be performed in order
to obtain a clear assignment of the 358 nm peak origin.
References
[1] J.S. Shor, L. Bemis, A.D. Kurtz, I. Grimberg, B.Z. Weiss, M.F. Mac Millan and W.J. Choyke: J.
Appl. Phys. 76 (1994), p. 4045.
[2] A.O. Konstantinov, C.I. Harris and E. Janzén: Appl. Phys. Lett. 65 (1994), p. 2699.
[3] T.V. Torchynska, A. Vivas Hernandez, A. Diaz Cano, S. Jimenez-Sandoval, S. Ostapenko and
M. Mynbaeva: J. Appl. Phys. 97 (2005), p. 033507-1
[4] Y. Shishkin, W.J. Choyke and R.P. Devaty: Mat. Sci. Forum 457-460 (2004), p. 1467.
[5] M. Mynbaeva, S.E. Saddow, G. Melnychuk, I. Nikitina, M. Sheglov, A. Sitnikova, N.
Kuznetsov, K. Mynbaev and V. Dmitriev: Appl. Phys. Lett. 78 (2001), p. 117.
[6] J. Bai, G. Dhanaraj, P. Gouma, M.Dudley and M. Mynbaeva: Mat. Sci. Forum 457-460 (2004),
p. 1479.
[7] A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Y. Ke, R.P. Devaty and W.J. Choyke: Mat. Sci.
Forum 457-460 (2004), p. 1463.
[8] W.T. Hsieh, Y.K. Fang, W.J. Lee, C.W. Ho, K.H Wu and J.J. Ho: Electr. Lett. 36 (2000), p.
1869.
[9] X.L. Wu, J.Y. Fan, T. Qiu, X. Yang, G.G. Siu and Paul K. Chu: Phys. Rev. Lett. 94 (2005), p.
026102-1.
[10] T. Nychyporuk, V. Lysenko, and D. Barbier: Phys. Rev. B 71 (2005), p. 115402.
[11] A. Kassiba, M. Makowska-Janusik, J. Bouclé, J.F. Bardeau, A. Bulou and N. Herlin-Boime:
Phys. Rev. B 66 (2002), p. 155317.
766 Silicon Carbide and Related Materials 2005
Silicon Carbide and Related Materials 2005 10.4028/www.scientific.net/MSF.527-529 Formation, Morphology and Optical Properties of SiC Nanopowder 10.4028/www.scientific.net/MSF.527-529.763
DOI References
[1] J.S. Shor, L. Bemis, A.D. Kurtz, I. Grimberg, B.Z. Weiss, M.F. Mac Millan and W.J. Choyke: J. ppl.
Phys. 76 (1994), p. 4045.
doi:10.1063/1.357352 [2] A.O. Konstantinov, C.I. Harris and E. Janzén: Appl. Phys. Lett. 65 (1994), p. 2699.
doi:10.1063/1.112610 [4] Y. Shishkin, W.J. Choyke and R.P. Devaty: Mat. Sci. Forum 457-460 (2004), p. 1467.
doi:10.4028/www.scientific.net/MSF.457-460.1467 [5] M. Mynbaeva, S.E. Saddow, G. Melnychuk, I. Nikitina, M. Sheglov, A. Sitnikova, N. uznetsov, K.
Mynbaev and V. Dmitriev: Appl. Phys. Lett. 78 (2001), p. 117.
doi:10.1063/1.1337628 [6] J. Bai, G. Dhanaraj, P. Gouma, M.Dudley and M. Mynbaeva: Mat. Sci. Forum 457-460 (2004), . 1479.
doi:10.4028/www.scientific.net/MSF.457-460.1479 [7] A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Y. Ke, R.P. Devaty and W.J. Choyke: Mat. Sci. orum 457-460
(2004), p. 1463.
doi:10.4028/www.scientific.net/MSF.457-460.1463 [9] X.L. Wu, J.Y. Fan, T. Qiu, X. Yang, G.G. Siu and Paul K. Chu: Phys. Rev. Lett. 94 (2005), p. 26102-1.
doi:10.1103/PhysRevLett.94.026102 [10] T. Nychyporuk, V. Lysenko, and D. Barbier: Phys. Rev. B 71 (2005), p. 115402.
doi:10.1103/PhysRevB.71.115402 [1] J.S. Shor, L. Bemis, A.D. Kurtz, I. Grimberg, B.Z. Weiss, M.F. Mac Millan and W.J. Choyke: J. Appl.
Phys. 76 (1994), p. 4045.
doi:10.1063/1.357352 [2] A.O. Konstantinov, C.I. Harris and E. Janzn: Appl. Phys. Lett. 65 (1994), p. 2699.
doi:10.1063/1.112610 [3] T.V. Torchynska, A. Vivas Hernandez, A. Diaz Cano, S. Jimenez-Sandoval, S. Ostapenko and M.
Mynbaeva: J. Appl. Phys. 97 (2005), p. 033507-1
doi:10.1063/1.1840095 [5] M. Mynbaeva, S.E. Saddow, G. Melnychuk, I. Nikitina, M. Sheglov, A. Sitnikova, N. Kuznetsov, K.
Mynbaev and V. Dmitriev: Appl. Phys. Lett. 78 (2001), p. 117.
doi:10.1063/1.1337628 [6] J. Bai, G. Dhanaraj, P. Gouma, M.Dudley and M. Mynbaeva: Mat. Sci. Forum 457-460 (2004), p. 1479.
doi:10.4028/www.scientific.net/MSF.457-460.1479 [7] A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Y. Ke, R.P. Devaty and W.J. Choyke: Mat. Sci. Forum 457-
460 (2004), p. 1463.
doi:10.4028/www.scientific.net/MSF.457-460.1463 [9] X.L. Wu, J.Y. Fan, T. Qiu, X. Yang, G.G. Siu and Paul K. Chu: Phys. Rev. Lett. 94 (2005), p. 026102-1.