Flicker Noise in Advanced CMOS Technology: Effects of Halo Implant Navid Paydavosi, Sriramkumar Venugopalan, Angada Sachid, Ali Niknejad Sagnik Dey, Samuel Martin, Xin Zhang Ali Niknejad, Chenming Hu Electrical Engineering and Computer Science University of California, Berkeley Advanced CMOS Technology Development Texas Instruments Dallas, TX, U.S.A University of California, Berkeley Berkeley, CA, U.S.A. 1 UC Berkeley, ESSDERC 2013
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Flicker Noise in Advanced CMOS Technology: Effects of Halo Implant
Navid Paydavosi,Sriramkumar Venugopalan,
Angada Sachid,Ali Niknejad
Sagnik Dey,Samuel Martin,
Xin ZhangAli Niknejad,Chenming Hu
Electrical Engineering and Computer ScienceUniversity of California, Berkeley
Approaches Suggested in LiteratureApproaches Suggested in Literature
Assuming only non‐uniform doping concentration:
[11]
The equation and the graph have been taken directly from [11]:Pocket implantation effect on drain current flicker noise in analog nMOSFET devices, Wu et al.,Pocket implantation effect on drain current flicker noise in analog nMOSFET devices, Wu et al., TED, vol. 51, no. 8, 2004
7UC Berkeley, ESSDERC 2013
MeasurementMeasurement • Measurements were done on short and long‐channel NMOSsfabricated by CMOS 45‐nm node technologyfabricated by CMOS 45 nm node technology
• A S300 semi‐auto prober with BTA9812 noise analyzer were used