Flash Naming Guide - Wintec Industriescursa.wii.wintecind.com/oem/documents/oem_naming_guide_2013.pdf · 1 Flash Products pg5 CompactFlash Cards pg6 Secure Digital Cards pg7 USB Flash

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Flash Products

Flash Productspg5 CompactFlash Cards pg6 Secure Digital Cards pg7 CFAST pg8 USB Flash Drives pg9 Embedded USB

Flash Naming Guide

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Firmware Revisions

Flash Component Configuration

NAND Flash & Die Revision

Program Mode

Controller Manufacturer

Temperature Rating

A = Standard

Device ID

Configuration

Density

Flash Product Type

NAND Flash Type

W = Wintec OEM Product

001 = 1 nAnD Flash, single Die, 1-CE 01D = 1 nAnD Flash, Dual Die, 1-CE 002 = 2 nAnD Flash, single Die 1-CE 02D = 2 nAnD Flash, Dual Die, 1-CE2Q2 = 2 nAnD Flash, Quad Die, 2-CE 2P4 = 2 nAnD Flash, Dual stacked, 4-CE4D2 = 4 nAnD Flash, Dual Die, 2-CE 4Q2 = 4 nAnD Flash, Quad Die, 2-CE4P4 = 4 nAnD Flash, Dual stack Package, 4-CE

x = Die Revision, e.g. m-Die, A-DiePx = samsung mx = micronhx = hynix ix = intel

0 = PiO mode1 = DmA / UDmA Enabled2 = UDmA disabled, mDmA Enabled

hx = hyperstone Controller Jx=Jmicronsx = smi Controller

none = Commercial Temp (0°C to +70°C)i = i-Temp (-40°C to +85°C) sD Extended Temp (-25°C to +85°C)

X = Removable T = Fixed DiskD = Dual iD (True iDE = fixed, PC Card memory mode = removable)

1 = standard Configuration h = sDhC

m = megabyte G = Gigabyte064 = 64 512 = 512 004 = 4128 = 128 001 = 1 008 = 8256 = 256 002 = 2 016 = 16

CF = Compact Flash CardsD = secure Digital CardUs = Usb Flash DriveEU = Embedded Usb Flash DrivemU = mini Usb Flash DriveCT = CFast Card

2 = mLC nAnD Flash4 = mLC nAnD Flash w/Custom Configuration7 = sLC nAnD Flash8 = sLC nAnD Flash w/Custom Configuration

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Flash Productspg5 CompactFlash Cards pg6 Secure Digital Cards pg7 USB Flash Drives pg8 Embedded USB Flash pg9 CFast

Flash Naming Guide

w 7 C F 0 3 2 g 1 D A I - H 4 1 P M - 4 Q 2 . 0 1

Firmware Revisions

Flash Component Configuration

NAND Flash & Die Revision

Program Mode

Controller Manufacturer

Temperature Rating

A = Form-Factor

Device ID

Configuration

Density

Flash Product Type

NAND Flash Type

W = Wintec OEM Product

001 = 1 nAnD Flash 01D = 1 nAnD Flash, Dual Die, 1-CE 002 = 2 nAnD Flash, single Die 1-CE 02D = 2 nAnD Flash, Dual Die, 1-CE2Q2 = 2 nAnD Flash, Quad Die, 2-CE 2P4 = 2 nAnD Flash, Dual stacked, 4-CE4D2 = 4 nAnD Flash, Dual Die, 2-CE 4Q2 = 4 nAnD Flash, Quad Die, 2-CE4P4 = 4 nAnD Flash, Dual stack Package, 4-CE

x = Die Revision, e.g. m-Die, A-DiePx = samsung mx = micronhx = hynix ix = intel

0 = PiO mode1 = DmA / UDmA Enabled2 = UDmA disabled, mDmA Enabled

hx = hyperstone Controllersx = smi Controller

none = Commercial Temp (0°C to +70°C)i = i-Temp (-40°C to +85°C) sD Extended Temp (-25°C to +85°C)

X = Removable T = Fixed DiskD = Dual iD (True iDE = fixed, PC Card memory mode = removable)

1 = standard Configuration h = sDhC

m = megabyte G = Gigabyte

064 = 64 512 = 512 004 = 4128 = 128 001 = 1 008 = 8256 = 256 002 = 2 016 = 16

CF = Compact Flash CardsD = secure Digital CardUs = Usb Flash DriveEU = Embedded Usb Flash DrivemU = mini Usb Flash DriveCT = CFast Card

2 = mLC nAnD Flash4 = mLC nAnD Flash w/Custom Configuration7 = sLC nAnD Flash8 = sLC nAnD Flash w/Custom Configuration

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Solid State Drives

Solid State Drive Naming Guide

pg11 2.5" SATA SSD pg13 1.8" micro SATA SSD pg14 SATA DOM pg15 Slim SATA pg16 PCI-E ExpressCard pg17 Half Size mSATA pg18 Full Size mSATA pg19 2.5" PATA pg20 DOM ATA/IDE pg21 ZIF PATA/IDE

solid states Drives

4D2 = 4 nAnD Flash, Dual Die 2-CE4Q2 = 4 nAnD Flash, Quad Die, 2-CE 08D = 8 nAnD Flash, Dual Die 1-CE 8Q2 = 8 nAnD Flash, Quad Die, 2-CEAs2 = 12 nAnD Flash, single Die, 2-CE AQ4 = 12 nAnD Flash, Quad Die 4-CE bD2 = 16 nAnD Flash, Dual Die, 2-CE bQ4 = 16 nAnD Flash, Quad Die, 4-CEbO4 = 16 nAnD Flash, Octal Die, 4-CECD2 = 20 nAnD Flash, Quad Die, 4-CE

(blank) = 4x nm and higher3 = 3x nm2 = 2x nm

x = Die Revision, e.g. m-Die, A-DiePx = samsung mx = micronhx = hynix ix = intel

1 = sATA2 = PATA (DmA / UDmA Enabled)

Dx = sandForce Ex = EastWhoJx = Jmicron sx = smi

i = i-Temp (-40°C – +85°C)none = Commercial Temp (0°C – 70°C)

A = 2.5" half size b = 2.5" Full size C = 1.8"

G = Gigabyte001 = 1 016 = 16 064 = 64 160 = 160002 = 2 025 = 25 100 = 100 200 = 200004 = 4 032 = 32 120 = 120 240 = 240008 = 8 050 = 50 128 = 128 480 = 480

Es = Embedded (DOm, slim sATA)Em = msATAEX = ExpressCardss = solid state Drives (1.8", 2.5") ZF = ZiF PATA

2 = mLC nAnD Flash3 = emLC nAnD Flash4 = mLC nAnD Flash w/Custom Configuration7 =sLC nAnD Flash8 = sLC nAnD Flash w/Custom Configuration

Firmware Revision

Flash Component Configuration

Geometry

NAND Flash & Die Revision

Program Mode

Controller Manufacturer

Temperature Rating

Form Factor

T = Fixed Disk

1 = Standard Configuration

Density

SSD Type

NAND Flash Type

W = Wintec OEM Product

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1DRAM

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pg24 DDR3 pg25 DDR2 pg26 DDR

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Die Revision

DRAM Manufacturer

Module Latency

Module Speed

Module Density

Module Type

Device Type

W = Wintec OEM Product

m = m-Die C = C-DieA = A-Die D = D-Dieb = b-Die

s = samsung h = hynixm = micron E = Elpida

i = CL6 n = CL11J = CL7 P = CL13L = CL9Note: Latency will be specified only on non-register (No Buffer) DIMMs

i = inphi D = iDT m = montageNote: For Registered DIMM this will be used for register identification

80 = 800mbs @ CL6 16 = 1600mbs @ CL1110 = 1066mbs @CL7 18 = 1866mbs @ CL1313 = 1333mbs @ CL9Note: For Registered DIMM latency will not be specified using additional letter.

(0)1G =1Gb (0)8G = 8Gb(0)2G = 2Gb (1)6G = 16Gb(0)4G = 4Gb 3(2)G = 32GbNote: For VLP DIMM (0) (1) (2) will be ignored.

UE(v)8 = 240-Unbuffered ECC, X8, 18-Chips, 2-RankUE(v)9 = 240-Unbuffered ECC, X8, 9-Chips, 1-RankUn(v)8 = 240-Unbuffered non-ECC, X8, 8-Chips, 1-RankUn(v)6 = 240-Unbuffered non-ECC, X8, 16-Chips, 2-RankRE(v)8 = 240-Registered ECC, X8, 18-Chips, 2-RankRE(v)9 = 240-Registered ECC, X8, 9-Chips, 1-RankRE(v)6 = 240-Registered ECC, X8, 36-Chips, 4-RankRE(v)4 = 240-Registered ECC, X4, 18-Chips, 1-RankRE(v)3 = 240-Registered ECC, X4, 36-Chips, 2-RanksE(v)8 = 204-sO-Dimm ECC, X8, 18-Chips, 2-RanksE(v)9 = 204-sO-Dimm ECC, X8, 9-Chips, 1-RanksE(v)8 = 204-sO-Dimm non-ECC, X8, 8-Chips, 1-RanksE(v)6 = 204-sO-Dimm non-ECC, X8, 16-Chips, 2-RankNote: For Standard DIMM (V) will be ignored. Mini RDIMM will use (NE), Mini UDIMM (OE), LRDIMM (DE), SO-RDIMM (AE).

(i)D3 = 1.5v DDR3 sDRAm(i)L3 = 1.35v DDR3 sDRAmNote: For I-Temp DRAM use (ID) or (IL)

DDR3 Naming Guide

DRAm

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DRAM

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Buffer/Register Set (Registered Modules Only)

DRAM Manufacturer and Die Revision

CAS Latency

Module Speed (MHz)

Module Height

Memory Footprints

Chip Configuration

Module Density

Module Type

Technology Type

W = Wintec OEM Product

i = inphi L = intel D = iDT

P = samsung h = micron A = A-Die C = C-DieC = hynix J = nanya b = b-Die D = D-Die E = Elpidia i = issi

A = CL 2 b = CL 2.5 C = CL 3G = CL 5 i = CL 6 J = CL 7 K = CL 8 L = CL 9 n = CL 11E = CL4

1600 (DDR3) 1333 (DDR3) 1066 (DDR3) 800 (DDR3/DDR2) 667 (DDR2) 533 (DDR2) 400 (DDR2/DDR) 333 (DDR) 266 (DDR) 133 (sDR) 100 (sDR)

U = Ultra Low Profile v = very Low Profile none = standard height PCb

02 = 2-Chip 04 = 4-Chip 05 =5-Chip (ECC) 08 = 8-Chip 09 = 9-Chip (ECC) 16 = 16-Chip 18 = 18-Chip (ECC) 32 = 32-Chip 36 = 36-Chip (ECC) 72 = 72-Chip (ECC)

X4 = x4 mono Die h8 = x8 stack DieX8 = x8 mono Die Q4 = x4 Quad Die x4X16 = x16 mono Die Q8 = x8 Quad Die x8D4 = x4 Dual/Twin Die D8 = x8 Dual/Twin Die

G = Gigabyte m = megabyte

064 = 64 128 = 128 256 = 256512 = 512 001 = 1 002 = 2004 = 4 008 = 8 016 = 16

RE = Registered ECCmoduleLE = Low Power Registered ECC (DDR3L)UE = Unbuffered ECCUn = Unbuffered non-ECCAE = Registered ECC sODimmsE = Unbuffered ECC sODimmsn = Unbuffered non-ECC sODimmOE = Unbuffered ECC miniDimmnE = miniDimm Registerd-ECCPE=Unbuffered ECC sODimm w/PLL

D3 = DDR3 D1 = DDRD2 = DDR2 sD = sDR

DDR2, DDR Naming Guide