Finite element simulations of compositionally graded InGaN solar cells G.F. Brown a,b,* , J.W.AgerIIIb, W.Walukiewicz b , J.Wua, b,a Advisor: H.C. Kuo Reporter: H.W. Wang Solar Energy Materials & Solar Cells 94 (2010) 478– 483 a Department of Materials Science&Engineering , University of California , Berkeley,California94720,USA b Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley,California94720,USA
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Finite element simulations of compositionally graded InGaN solar cells
Finite element simulations of compositionally graded InGaN solar cells . G.F. Brown a,b ,* , J.W.AgerIIIb , W.Walukiewicz b , J.Wua, b,a. a Department of Materials Science&Engineering , University of California , Berkeley,California94720,USA - PowerPoint PPT Presentation
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Finite element simulations of compositionally graded InGaN solar
cells G.F. Brown a,b,* , J.W.AgerIIIb, W.Walukiewicz b, J.Wua,b,a
Advisor: H.C. KuoReporter: H.W. Wang
Solar Energy Materials & Solar Cells 94 (2010) 478–483
a Department of Materials Science&Engineering , University of California , Berkeley,California94720,USAb Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley,California94720,USA
1. Introduction
2. Properties of InxGa1-xN used in simulations 3. Simulation results
Outline:
4. Conclusions
Broad band InN - 0.7eV GaN - 3.42eV
Cheep fabrication process Grown on Si substrates by a low temperature
processHigh effiency
Advantage
DisadvantageIndium composition (<30%)
P-type doping
High absorption
Large lattice mismatch between InN and GaN alloysValence band discontinuity