Fast simulation of nanoimprint lithography: modelling capillary pressures during resist deformation 20 October 2011 Hayden Taylor and Eehern Wong Simprint Nanotechnologies Ltd Bristol, United Kingdom Namil Koo, Jung Wuk Kim and Christian Moormann AMICA, AMO GmbH Aachen, Germany [email protected]+44 117 2302566
14
Embed
Fast simulation of nanoimprint lithography: modelling capillary pressures during resist deformation 20 October 2011 Hayden Taylor and Eehern Wong Simprint.
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Fast simulation of nanoimprint lithography: modelling capillary pressures during resist deformation
20 October 2011
Hayden Taylor and Eehern WongSimprint Nanotechnologies LtdBristol, United Kingdom
Namil Koo, Jung Wuk Kim and Christian Moormann AMICA, AMO GmbH Aachen, Germany
With zero external pressure:Stamp velocity = 56 nm/ms
Summary and outlook
Capillary pressures are added into our spin-on resist simulation algorithm
Minimal increase in computation time
RLT homogenisation time is crucial for spun-on UVNIL processes
A pressure algorithm is proposed for droplet-dispensed NIL
Simulation Engine
Physical prediction
Resist model
Chip design
Process
Acknowledgements
Matthew Dirckx Theodor Nielsen, Brian Bilenberg and Kristian
Smistrup at NIL Technology Duane Boning, MIT James Freedman, MIT Technology Licensing Office Mark Breeze
Index
Simulation uses Viscosity/pressures Model capillary pressures Integrate with model Dependence on feature size Experimental Model vs expt RLT homogenisation Droplet demo