Fabrication and Characterization of bulk FinFETs for Future Nano- Scale CMOS Technology Jong-Ho Lee [email protected]School of EECS and National Education Center for Semiconductor Technology Kyungpook National University, Daegu, 702-701 Korea 2 nd US-Korea NanoForum, LA
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Jong-Ho Lee2nd US-Korea NanoForum, LA
Fabrication and Characterization of bulk FinFETs for Future Nano-
Scale CMOS Technology
Jong-Ho Lee
[email protected] of EECS and National Education Center for Semiconductor Technology
Kyungpook National University, Daegu, 702-701 Korea
2nd US-Korea NanoForum, LA
Jong-Ho Lee2nd US-Korea NanoForum, LA
Contents
Fabrication of Bulk FinFETsby Spacer Technologyby Selective Si3N4 Recess
Device and SRAM Cell CharacteristicsSummary
IntroductionSimulation Study
Jong-Ho Lee2nd US-Korea NanoForum, LA
Introduction
S/D
2010 Time200820062004
Perf
orm
ance
Double/Triple-Gate
Double-Gate CMOS
TG
BG
TG
BG
S/DS/DS/D
G
S/D
Fin Double/Triple-Gate FET
SOI/SiGeG
SOI PD/FD CMOS
G
S/D S/D
Si
SiGe
SiGe CMOS (high mobility)
GHalo
Bulk LDD CMOS (Halo)
Bulk
: Technology Roadmap Beyond Bulk LDD CMOS
Jong-Ho Lee2nd US-Korea NanoForum, LA
Why Double/Triple-Gate Transistor?Robustness against SCEHigher Current DrivabilityGood Subthreshold Swing
Driving Force of CMOS Scaling-down:High Performance and High Integration Density
Introduction
G
G
Si film
S D
A Promising Device StructureDouble/Triple-Gate MOSFETs (or FinFETs)
Jong-Ho Lee2nd US-Korea NanoForum, LA
ZY
X
Silicon Wafer
Current- CarryingPlane
Bottom Gate
S
Top Gate
D
Silicon Wafer
Right Gate
Cur
rent
-Car
ryin
g
Pla
ne
S
D
ZY
XLeft Gate
directioncurrent
(a) Type I (b) Type II
(c) Type III
ZY
X
Silicon Wafer
Right Gate
current directionS
D
Current-Carrying Plane
Left Gate Process technology of FinFET is
easy and compatible with conventional fabrication process
Introduction : Types of Double-Gate Transistors
∗ H. P. Wong et al., IBM, vol. 87, no. 4, p.537, 1999, Proceedings of the IEEE
Jong-Ho Lee2nd US-Korea NanoForum, LA
Type I(Planar DG
FETs)
Type II(Vertical DG
FETs)
Gate Position Top/Bottom Left/Right (or
Cylinder)
Body Shape Horizontal Vertical
Current Carrying
Plane
Horizontal Surfaces Side Surfaces
Current Flow
DirectionHorizontal Vertical
Type
Key Geometry
Type III(FinFETs)
Left/Right
Vertical
Side Surfaces
Horizontal
Types of Double/Triple-Gate Transistors
(Triple-GateMOSFETs)
Left/Right/Top
Vertical
Side Surfaces
Horizontal
Jong-Ho Lee2nd US-Korea NanoForum, LA
Double-Gate Transistor (SOI FinFET)
FinFETsimple, self-aligned double-gatesgood process compatibilitythickness control of fin bodyRIE damage on the channel, high S/D resistance
∗ D. Hisamoto et al., UC Berkeley, p.1032, IEDM 1998
Jong-Ho Lee2nd US-Korea NanoForum, LA
Body-Tied Double/Triple-Gate MOSFET Using Bulk Wafer (Bulk FinFET)
Low wafer costLow defect densityLess back-bias effectHigh heat transfer rate to substrateGood process compatibility
S/D
OxideSi Substrate
S/D
Body
Gate
HFinxj
0
WFin
TFOX
World 1st Cost-Effective Double/Triple-Gate MOSFETs
∗ J.-H. Lee., Korea/Japan/USA patent
Schematic 3-D View
Jong-Ho Lee2nd US-Korea NanoForum, LA
Cross-Sectional Views (Body Structure) for 3-Dimensional Device Simulation
Bulk FinFET
Si sub Si sub
SiO2SiO2
GateGate
SOI FinFET
Fin body Fin body
Jong-Ho Lee2nd US-Korea NanoForum, LA
10 20 30 40 500.1
0.2
0.3
0.4
0.5
Na=1x1019 cm-3
TOX=1.5 nm
xj,S/D=66 nmHFin=70 nm
Bulk SOI
Fin Width (nm)
VT (V
)
LG=25 nm
0
30
60
90
120
150
180
DIB
L (mV
/0.9V)
VT and DIBL versus Fin Width
3-D Simulation Results
∗ J.-H. Lee et al., KNU, p. 102, Si Nanoelectronics Workshop 2003
10 20 30 40 5070
75
80
85
90
95
100
xj,S/D=66 nmHFin=70 nm
Na=1x1019 cm-3
TOX=1.5 nm
LG=25 nm
VDS=0.9 V
Sub
thre
shol
d S
win
g (m
V/d
ec)
Fin Width (nm)
Bulk SOI
VDS=0.05 V
Subthreshold Swing versus Fin Width
22sub bT MS Box
qN tVC
φ= Φ + + for fully depleted body
Jong-Ho Lee2nd US-Korea NanoForum, LA
3-D Simulation Results
S/D
OxideSi Substrate
S/D
Body
Gate
HFinxj
0
WFin
TFOX
0.0 0.2 0.4 0.6 0.8 1.0
300
325
350
375
400
425
450
475
VDS=0.9 V
TOX=1.5 nmSOI
Bulk
Dev
ice
Tem
pera
ture
(K)
Gate Voltage (V)
LG=30 nmsubstrate electrode@ temperature=300 K
Heat
Device Temperature versus Gate Voltage
∗ J.-H. Lee et al., KNU, p. 102, Si Nanoelectronics Workshop 2003
∆T~130 °C
3-D Schematic View of Heat Transfer from Body to Substrate
Jong-Ho Lee2nd US-Korea NanoForum, LA
Si
SiO2 30 nmSiN 25 nmSiO2 30 nm
SiN 80 nm
Poly-Si Spacer30 nm
4 Stack Layer Growth and Deposition
Photo Lithography, SiN Etching, Poly-Si Depo., and Dry Etching
SiN Removal Using Phosphoric Acid
Poly-Si Spacer
Si
Fabrication Steps by Using Spacer Technology
Jong-Ho Lee2nd US-Korea NanoForum, LA
SiO2, SiN, and SiO2 Dry Etching
Top Si Width 25 nmBottom Si Width 100 nm
Si Fin Height 230 nm
Fin Dry Etching
Fabrication Steps
Fin body
Jong-Ho Lee2nd US-Korea NanoForum, LA / 27
SiO2
Thin Ox., Filling, and Densification
Chemical Mechanical Polishing (CMP)
Wet Etch-back
SiO2
Field Oxide Thickness 80 nm
Fabrication Steps
Jong-Ho Lee2nd US-Korea NanoForum, LA
First Body-Tied Triple-Gate MOFET (Bulk FinFET)
As+, 20 keV 3x1015/cm2, 2 Fin
25 nm
50 nm
40 nm
-0.5 0.0 0.5 1.0 1.510-10
10-9
10-8
10-7 VDS = 0.1 V
Vbs = 0 V Vbs = -1 V Vbs = -2 V
Dra
in C
urre
nt (A
)
Gate Voltage (V)ID-VGS Characteristics of 40 nm bulk NFiNFET
Poly-Si
40 nm
Gate Poly-Si Etching
∗ T. Park et al., SNU/KNU, Physica E19, p.6, 2003∗ T. Park et al., SNU/KNU, Nanomes03 2003
Jong-Ho Lee2nd US-Korea NanoForum, LA
Gate Elec
trode
SiO2
SiN
Si Sub
strate
Fin
SiO2
Modified Structure of Bulk FinFET
∗ E. Yoon, J.-H. Lee, and T. park, Korea/Japan/USA/Germany patent
Thick SiN liner formation &SiN liner only recessed
Oxide
Si
CMP andpartial etch-back
Top Si Width 25 nmBottom Si Width 100 nmSi Fin Height 230 nm
Clear Sidewall OpenPlanarization of the Top Surface of Poly-Si Gate
Briefly introduced key features of double/triple-gate FinFETs
Bulk FinFETs were compared with SOI FinFETsNearly the same device scalabilityBetter wafer quality Better characteristics regarding the body connected to sub.
Bulk FinFETs have been demonstrated experimentallyFirst nano-scale bulk FinFET realized by using spacer technologyModified bulk FinFETs realized by adopting selective Si3N4 recess
Good device characteristics were achieved and SNM of 280 mV was obtained from SRAM cell at VCC of 1.2 V