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E-mail: [email protected]. Web: http://elitconf.sumdu.edu.ua/index.php/electronics/fee16.

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:: 2016

4

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: 20 2016 ., . 310, 1500

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.

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, 3.

.

: . ., . ., . .

. 4.

– . . – . .

InxTl1 – xI 5.

(0,4 < < 0,9).

: . ., . .,

. .

:: 2016

5

6..

: . ., . .

7.

,

.

– . .

8..

: . . ., . .

9.

.

: . . ., . .

. 10.

– . .

11. Ag2ZnI4 Ag–Zn–Se–i

: . ., . ., . . ., . .,

. .

:: 2016

6

12..

– . .

13..

– . . – . .

14.

.

: . ., . ., . .

CdxZn1 – S 15.

.

: . ., . ., . .

16.

.

– . .

. 17.

: . ., . ., . .

:: 2016

7

18.

.

: . ., . ., . .

19.

– .

: . ., . ., . .

20.

.

: . ., . .

. 21.

: . ., . ., . .

Tl4CdI6. 22.

: . ., . ., . ., . ., . .

:: 2016

8

23..

– . .

. 24.

– . .

25. 239PuBe.

: . ., . ., . . . .

: 26.

.

: . ., . . .

Potential Surface of Polymethine Dye Molecule in the optimized 27.state.

Authors: Post-grad. Stud. Solomko V.V., Prof. Lopatkin Yu.M., Stud. Logvinenko A.Yu., Prof. Kondratenko P.A.

28.

: .

– . . .

Proton Transfer Route in Spiropyran Molecule. 29.

Authors: Post-grad. Stud. Kovalenko O.A., Prof. Lopatkin Yu.M., Stud. Oblapenko A.A.,

:: 2016

9

Prof. Kondratenko P.A.

: 30..

: . ., . .

31.

.

: . ., . ., . .

32.

Ag0.95Cu0.05GaGe3Se8, AgGa0.95In0.05Ge3Se8 AgGaGe2.85Sn0.15Se8.

: . ., . ., . ., . .

, 33.TlInSe2-GeSe2.

: . . . ., . ., . .

34.

.

– . . – . .

:: 2016

10

35..

: . ., . .

36..

: . ., . .

– . .

37..

: . ., . .

38.

1- .

: . . ., . ., . ., . .

C3H7OH. 39.

: . ., . ., . . ., . .

40.

.

:: 2016

11

: . ., . ., . ., . .

41.

: 1- .

: . ., . ., . ., . . .

Prototype of Stable Molecular Switch. 42.

Authors: PhD stud. Malashenko A.G., Stud. Shevchenko Yu.A., Prof. Lopatkin Yu.M., Assoc. Prof. Sakun T.N.

np- 43.

.

– . . .

44..

– . . .

45..

: . ., . ., . .

:: 2016

12

2 :

»

– . .- . , . . – . .

: 21 2016 ., . 314, 1325

: 1.

.

– . . .

. 2.

: . . ., . . ., . . .

3.

.

: . ., . ., . ., . .

Superhydrophobic/superhydrophilic switching on the surface of 4.

ZnO microstructures caused by UV irradiation and argon ion etching process.

: . Mostovyi U.R., . Rudyk Yu.V. . . Turko B.I., . Kapustianyk V.B.

:: 2016

13

5..

– . . .

6..

: . ., . .- . .

. 7.

: . ., . .

8..

: . . . ., . . . .

9..

– . .

10.

.

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– . .

11.

.

– . .

:: 2016

14

- , 12.

.

– . .

13..

– . . . .

14.

.

– . .

15.FeF3 n H2O/C

.

: . . . ., . .

– . .

16..

: . . ., . . ., . . ., . . . ., . ., . ., . .

. 17.

– . . .

:: 2016

15

-18..

: . ., . . .

– . .

MD simulation of AlCoCuFeNi high-entropy alloy nanoparticle. 19.

Author – Assos. Prof. Kushnerov O.I.,

/ . 20.

: . ., . ., . .

- 21. TiN/MoN.

– . . – .

22..

: . ., . .,

– .

23..

: . ., . .

. 24.

: . ., . ., . .

:: 2016

16

25.(TiZrHfVNb)N.

– . ., – .

26..

: . ., . .

– .

27.Ti-W-C Ti-W-B, .

: . . ., . .

28..

– . . : . .,

. .

NaCl 29.Ag .

: . . ., . ., . ., . . . .

:: 2016

17

3 « - »

– . .- . , . .

– . .- . , . .

: 20 2015 ., . 326, 1100

1.Co/Dy/Ni.

– . ., – . .

. 2.

– . ., : . .,

. .

o/Ag/Co. 3.

: . ., . ., . . .

4.

.

: . ., . . . ., . . . .

– . .

. 5.

: . ., . . . . .

:: 2016

18

60 . 6.

: . ., . . . . .

7. Co, Ag Fe20Ni80.

– . . – . . .

Ru. 8.

: . .,

. . – . .

9.

Fe Au.

: . ., . .

– . .

10. CoNi Cu.

– . .,

– . .

, 11. Ni Dy

: . .,

. ., . . . .

– . .

:: 2016

19

Cd1 – xMnxTe. 12.

: . . ., . ., . ., . ., . .

Zn2SnO4, 13.

.

: . ., . ., . ., . .

14.

.

: . ., . ., . .

15.

.

: . ., . .

16.

.

: . ., . .

Mo, Pb Mg 17..

:: 2016

20

: . ., . ., . ., . ., . .

-Ga2O3. 18.

: . ., .

– . . .

Cd(Mn)Te. 19.

: . . ., . ., . ., . .

Cd(Mn)Te 20.

.

: . ., . . ., . ., . .

Cd1 – xMnxTe 21.

.

: . . . ., . . . ., . ., . . . ., . .

Cd1 – x – yMnxZnyTe (x = 0,05-0,25, y = 0,10-22.0,15) .

:: 2016

21

: . ., . ., . ., . .

23.

n-InSe.

: . ., . . ., . . ., . . . ., . . . .

24.InSe .

: . ., . .

TlPb2Br5 – I . 25.

: . ., . ., . ., . ., . ., . .

Tl3PbBr5-Tl3PbI5. 26.

: . ., . ., . ., . ., . ., . ., . .

:: 2016

22

p-GaTe - n-27.InSe.

– . .

Ag8SnSe6. 28.

– . .

29., .

: . ., . . . ., . .

30..

: . .C., . ., . .

InSe. 31.

: . . ., . . .

32..

: . . ., . . ., . . ., . . .

33.Al – 28.5 . % Ge – 1.5 . % Si.

– . . .

:: 2016

23

Tl Ga 34.Se2.

: . . . .

4 « »

– .- . , . . – . .- . , . . .

: 20 2016 ., . 325 , 1100

Diode temperature sensors with tunable sensitivity. 1.

Authors: Researcher S. Yu. Yerochin, Jr. Researcher A. N. Demenskiy,

Sr. Researcher V. A. Krasnov Sr. Researcher S. V. Shutov

The measurement of LF noise spectral exponent of optocouplers 2.by three-point method.

Author – PhD Student Reschikoff S.E. Supervisor – Dr. Tech. Sc., Assoc. Prof. Sergeev V.A.,

3..

– . . – . .

. 4.

– . .

:: 2016

24

5..

– . . – . .

6..

: . . . ., . , . .

SiC- 7..

: . . . ., . . ., . . . ., . . . .

. 8.

: . ., . . ., . .

. 9.

: . .,

10..

: . ., . ., . .

11.W Ti.

:: 2016

25

– . . – . .

12..

– . .

Arduino. 13.

– . . – . .

-14..

: . ., . .

– . .

15..

: . ., . .

16..

: . ., . ., . ., . . .,

– . .

17.: .

: .

:: 2016

26

18. Au Fe. . .

: . ., ., . .

– . .

19. Au Fe. .

.

: ., .,

. . – . .

20. Au Fe. .

.

: ., . .

– . .

21.Fe Pd (Pt).

: ., . . .

– . .

. 22.

: . .

:: 2016

27

23..

: . . – . . .

. 24.

: . ., .,

. . . – . .

Ni Cu 25..

: . ., . . .

– . .

26..

: . ., . .

5 « ,

»

– . . , . . – . .

: 20 2016 ., . 211, 1300

:: 2016

28

1. n-ito(zno)/n-cds(n-zns, znse)/p-czts.

: . ., . ., . .

2.

.

: . ., . ., . . . ., . .

3. «IDEA».

– . .

4..

– . . – . .

. 5.

: . ., . .

wavelet 6..

:– . ., . .

– . .

7..

:: 2016

29

: . ., . ., . ., . ., . .

8..

: . ., . ., . ., . .

9..

: . ., . .

10..

– . . .

. 11.

: . ., . .

TDM- . 12.

: . ., . .

13..

: . ., . .

:: 2016

30

Quartus II. 14.

: . ., . .

Quartus II. 15.

: . ., . .

16..

– . . – . .

. 17.

: . ., . .

18..

: . ., . . ., . .

. 19.

: . ., . .

. 20.

: . ., . .

21..

:: 2016

31

: . ., . ., . .

22..

: . ., . .

. 23.

: . ., . .

24..

: . ., . .,

– . . .

25..

: . ., . .

. 26.

: . ., . ., . . .

. 27.

: . ., . . ., . ., . .

:: 2016

32

6 « »

– . . , . . – . .

: 21 2016 ., . 304, 1500

1.

.

: ., ., .

2.

.

– . . . .

Research of frequency generator for vibroacoustic therapy 3.device.

Authors: Assoc. Prof. Bazilo C.V., Stud. Medianyk V.V.

4.

.

: . ., . .

. 5.

– . .

6.

.

:: 2016

33

: . ., . ., . ., . .

6 . 7.

: . ., . ., . . .

8.

.

: . ., . .

– . .

9..

: . ., . .

10.

.

: . ., . ., . ., . .

11.

.

– . .

:: 2016

34

. 12.

: . ., .

13.

.

: . ., . ., . ., . ., . .

1

»

1: :: 2016

36

1:1

.,

, .

S. thermophilus 1:1 .

. ( ) NaCl

:

21

32222

21

0

10

1

AClClNaNa Nzeze

kT (1)

– ; z – ; – ; NA – , 0 – , –

, k – , T – .

1 – NaCl.

NaCl,

,

37 , 0,15 – 14,7 0,81 0,1 – 18,4 0,99 0,05 – 25,4 1,40

0,025 – 34,4 1,98

, NaCl,

, ,

.

: ., , .

:: 2016 1:

37

., ; ., . .- . , .

--

, . --

. ,

. ,

.

.

1800 .

. ,

.

. , (

) « »,

.

, ,

.

1: :: 2016

38

,

., ; ., ; .,

, .

, , .

( , ). –

( , )

( , ).

. ,

, , ,

. , . ,

, = ( ) ( – ),

sin , = sin(2 ), (1)

– , – , –

. (1) ,

= (0) arccos[cos(2 )] , (2)

= lim . ,

( = 0), – ( 0), .

.

:: 2016 1:

39

.,

« », .

, S - (S , = 1,1-1,6 ).

( ) : ( ),

, (O , Er, Eu).

Si ( ) .

, ~1,1-1,6 .

,

, .

( > 0,1 %) . = 0,1 %

2 = 1,44 [1].

0,1 % . S 4

0,81, 0,87, 0,93 0,99 , [2]. p-

Si .

. . Si p

10. = 3 4 7,5 .

. 14-5 .

5 % NaOH. 1 — , ;

1: :: 2016

40

2 – 5 10 ; 3 –

= 1000 . (111) (

3» ) 1)

P ~ 1,3 10 Al, .

2 , 3 .

.

( 2) -20. ( ~5 10 )

: 183 ) .

100 1 . :

. 1 , ,

2 = 1,14 = 1,44 .

. ,

2, 3 D2

D4 1,5-2 . , D4(1,07 eB) , D2(0,87 eB)

, , , .

: ., . . .

1. . , . , . ,

23, 651 (1976). 2. . , , 44 1, 3 (2010).

:: 2016 1:

41

InxTl1 – xI (0,4< <0,9)

., ; ., ; .,

, .

( )

. , , InIxBr1 – x TlIxBr1 – x) Eg(x)

0,05-0,1 , InxTl1 – xI ,

. Eg = 2,01 InI Eg = 2,9

TlI [1]. InxTl1 – xI

.

( ) InxTl1 – xI TlI = 293 ( = 0,5),

= 78 ( = 0,9; 0,8; 0,5 0,4). a – ,

(b – ). InxTl1 – xI

, , [2],

,

. , InxTl1 – xI

p , .

In , ,

, .

1. Ohno N., Fuita M., et al. J. Phys. Soc. Jpn. 55, 3659 (1986). 2. . ., . ., ., 37, 547 (1992).

1: :: 2016

42

., ; .,

, . ,

. (

) (

). : ,

, , . ,

, ,

, ,

.

( ) ,

) 1 0 10 , .

1,55 .

,

, 5 , .

, .

,

, .

:: 2016 1:

43

,

., , . ,

II,

1394 1406 ., ( . , , ), 1,5-2

, ; » , « » .

– ( – 15 , – 50 )

( – 50 , – 3 )

. , II – 92,82 % – 7,18 %,

« » – ,

. , , ,

« » . « »

. « » –

(Ag), (Cu), (CuO) ( , 5-8 ).

,

, .

,

. ,

, -

, .

1: :: 2016

44

., ; .,

, . ,

– ( )

. ,

= TbxY3 – xFe5O12

111 100 [2,3].

( ) Tb0,26Y2,74Fe5O12 .

, .

= 290 132 ;

111

100 , « » .

,

, , ,

[1, 2].

1. . , . , . , . , . , . , . . 68 3, 1189 (1975).

2. . , . , . , . , . , . . 70 4, 1363 (1976).

:: 2016 1:

45

., ; .,

, ,

( –

Fe2O3:Ga), H

[1]. ,

,

, l 2,

.

1.15 m He-Ne 50 (

(111) ) .

( /4) ,

[2]. 0,001 ,

5 %. ,

l 2 .

1. . , . , . , . , . 3-4, 188 (2013).

2. . , . , . , .

: : 1990).

1: :: 2016

46

., , .

, .

, < . .

, ,

= . ,

, , , . , , :

= " , (1)

:

= ( ), (2)

, – , ; – ; – ; –

; – - . ( =1,08 10 -1 -1),

( =4,8 10 ) +NiCr ( 2,0 10 .%) .

. , , ,

, . ,

, .

.

:: 2016 1:

47

Ag2ZnI4 Ag–Zn–Se–i

.1, ; .2, ;

.1, ; .3, ; .1,

1 , .

2 “ ”, . 3 , .

Ag2ZnI4 [1]

=416 , -AgI

Ag2ZnI4 AgI+ZnI2. 483

. 542

-Ag2ZnI4 [2, 3].

Ag2ZnI4 Ag2ZnI4–ZnI2–Se–ZnSe Ag–Zn–Se–I 365-460 [4].

– G298 ), – 298 ), rS298 ( ): 250.0 ± 2.8, 14.3 ± 1.6, 790.9 ± 7.8, 365-400 ; 287.6 ± 6.3, 162.4 ± 5.1, 420.3 ± 12.4, 400-417 ; 306.4 ± 5.5, 231.5 ± 4.6, 251.4 ± 10.2, 438-458 . 1. J.W. Brightwell, C.N. Buckley, G. Foxton, J. Mater. Sci. Let. 1, 429

(1982). 2. R. Blachnik, U. Stoter, Thermochim. Acta. 145, 93 (1989). 3. S. Hull, D.A. Keen, P. Berastegui, J. Phys. Condens. Mat. 14, 13579

(2002). 4. M.V. Moroz, M.V. Prokhorenko, B.P. Rudyk, Russ. J. Electrochem. 50,

1177 (2014).

1: :: 2016

48

.,

, .

.

, ,

, : – (Im. )

(Im. ) ( . 1 );

– (W ) (W =W /W0)

(W ), (W )

. 1 ).

= ,, (1)

– , , .

1 – ( ) ( ) .

:: 2016 1:

49

., , .

. , –

. ,

, , [1].

( ) . , ( ) [2].

, , - ,

.

. , 0,01 ,

+Cu, , T = 303 K 3,68·10 – 7 2,12·10 – 7 ( ). 0,10

(2,12·10 – 7 l 1,75·10 – 7) , (1,37·10 – 6 L 6,24·10 – 7) .

, , d .

,

7,26·10 – 6 7,00·10 – 5 ( ) T = 303 K. , + Cu

0,01 , (6,64·10 – 16 4,69·10 – 16 , = f( )

+ Cu(0,10 % .) = 2,24·10 – 15 .

, , –

. : ., .

1. . , , , .: , 2005).

2. . , / . . ( .: , 1980).

1: :: 2016

50

., ; ., ;

., , .

,

, .

( ) ( )

.

µ

ENG-<0, µ>0)

DNG-<0, µ<0)

DPS->0, µ>0)

MNG->0, µ<0)

1 –

[1]:

DNG SNG- , - EBG- ).

: ,

:: 2016 1:

51

, , , .

, .

, .

, ,

, .

,

, .

, , , ,

[2]. ,

.

0115U000690. 1. R.W. Ziolkowski, Metamaterials: Physics and Engineering

Explorations (Ed. by N. Engheta) (IEEE Press: A John Wiley & Sons, Inc.: 2006).

2. . , : 7, 70 ( : 2009).

1: :: 2016

52

CdxZn1- S

., ; ., ; .,

, .

-,

2 6, (Cd, Zn .) ( , S, Se, Te)

. CdxZn1 – S

CdTe CdS.

CdS

.

, ,

. CdxZn1- S.

, , Ts = (250-500) ° ,

1,25 , . Cd, Zn S.

CdxZn1 – S.

Shimadzu SolidSpec 3700

: = (300-800) . ( ), R( ),

( ), n( ), 1( ) 2( ) .

,

, CdTe.

:: 2016 1:

53

., ” ”, .

,

( 2),

1 2. 1 [1].

1 – n1 n2.

- .

– w12 = w21.

2

, 1 2

, + . 2-

[2].

- 235 -238

.

.

1. . . ., 1001, . 2/54, 125 (2012). 2. . , .- .

. . – . . . . . . ( : 20 . 2013).

1: :: 2016

54

., , ., , .,

, .

,

– .

, , ,

, .

.

,

,

. :

– ( > 0 > 0), ( < 0),

( < 0), ( < 0 < 0); – ,

, ;

– , ,

. ,

, , ,

, , .

:: 2016 1:

55

., , ., , .,

, .

( ),

z (

) . , ( )

90 , ,

z . , ,

d y : 4d .

, , 2d

4d ,

(1) (2):

42 ln sin , 1,2,...2 2

h N N (1)

22 2 1 ln sin , 0,1,2,... .4 2

h N N (2)

- , - , l , l - .

1: :: 2016

56

–

., ; ., ; .,

, .

, ( )

, ( ), : -

, , .

,

[1, 2].

, .

, ,

, 30-40%.

. ,

, , , .

1 . ., ( :

, 1976). 2 . ., ( :

. : 1991).

:: 2016 1:

57

-

., ; ., , .

[1,2],

( ) ( ),

. , ,

,

. ,

e

. e , , .

( ).

2 100 ,

50 ,

10 .

1. . ., ( :

, 1976). 2. . ., ( :

. : 1991).

1: :: 2016

58

.1, ; .2, ; .3, ;

1 . . , .

2 , . 3 , .

,

[1,2],

, ( . Horizon 2020 projects).

, H||A (A –

), , l (l = M1 – M2),

= 0 = /2. 0 /2 ,

: H1 H H2 (H1 –, H2 – ).

1 H2 2 = (H22 – H2)/ e1 E,

1 ( = /2 – ) H1 2 = (H2 – H1

2)/ e1 E (E – , e1 – ). ,

, , .

. ,

( ), ,

, , A, l.

1. K. Yamaguchi, T. Kurihara, et. al., Phys. Rev. B 92, 064404 (2015). 2. H.J. Zhao, X. M. Chen, et. al., Phys. Rev. B 93, 014417 (2016).

:: 2016 1:

59

Tl4CdI6

., ; ., ; ., ; ., ; .,

, .

. ,

(k ~ -1) (~a-1),

, . -

(k=0), .

( ) , - ,

, ,

- . - (u) A1u, A2u, B1u, B2u, Eu.

, ( ). (g) A1g,

A2g, B1g, B2g, Eg.

uua EA2

ugugugugug EEBBBBAAA 10723344544 22112211

1g, .

1g [1]. -52.

104,8 -1

1g). 26,05 -1 ( g), 44,8 1g), 51,7 c -1 (Eg), 55,45 -1 (B2g) 63,55 -1 (A1g).

1. . , . , ., . 38, 64-69, (2015).

1: :: 2016

60

.,

, . ,

.

( ). : ,

, ; , .

, , , , — .

— [1].

. : ;

;

; .

: , ; ;

( , ) ( ) .

.

( )

, .

1. ., .,

(LAP lambert Academic Publishing: 2014).

:: 2016 1:

61

., , .

, ( ) LiNH4SO4

II, (Si 2), , , SO4 Li 4 –

, ,

. :

, , ,

( ) .

, :

Tc = Tc

0·s(p)·[1 + p·( - 1)] / [1 + p( - 1)], (1)

Tc0 = f0

11A1/9B1 - p = 0, A1, 2, B1 – , s(p) -

, - , -

. .

( 2 < 0), , .

s(p), ,

: MexNH4SO4 – Li1 -

xNH4SO4, Me = , Rb, Cs, [LiNH4SO4]1 - x - [LiNH4SeO4]x.

.

1: :: 2016

62

239PuBe

., ; ., ;

., . . . , .

,

, ,

. -.

,

[1].

Bi3Ge4O12 , CdWO4 , Gd2SiO5 239PuBe. ,

. 239PuBe,

250 , 50 .

-, , ,

.

,

. , Bi3Ge4O12 CdWO4

, Gd2SiO5 239PuBe.

1. B.V. Grinyov, G.M. Onishchenko, V.D. Ryzhikov et al., Functional

Mater. 21 No 3, 345 (2014).

:: 2016 1:

63

:

., ; .,

, .

.

[1]:

[ , ]+ ( ), (1)

– , – , ( ) – « » ( ,

). ,

. « » [1], .

, (1) ,

. ,

« » .

1 – ( ) ( )

( ) ( ).

1. H.-P. Breuer and F. Petruccione, The Theory of Open Quantum Systems

(Oxford University Press, 2007).

1: :: 2016

64

Potential Surface of Polymethine Dye Molecule in the optimized state

Vita V. Solomko1, graduate student; Yuriy M. Lopatkin1, professor; Artyom Yu. Logvinenko1, student; Petro A. Kondratenko2, professor

1 Sumy State University, Sumy 2 National Aviation University, Kiev

Polymethine dyes (PMD) is widely used as sensitizers and as a

convenient object for studying properties of chromophore systems. For research of PMD and the processes occurring in them, in this paper are applied quantum chemistry methods that are implemented using software package MOPAC2016, a well-established themselves with studies of complex molecules.

In this paper, the calculation of the potential surfaces of the ground and excited states of the dioksazoltrimetintsianin molecule in the optimized state is made. It was confirmed the phase transition found in previous work, in which the singlet ground state was replaced by a triplet (Fig.1). Inability in previous studies to optimize the molecules at each step of increasing the bond length between the carbon atoms in the chromophore chain, not allowed telling with confidence about the presence of this condition.

Figure 1 – Dependence of potential surfaces on the bond length in the chromophore chain of the PMD molecule

Furthermore, with increasing the bond length, as expected, there was a general decreasing of energy of the potential surfaces.

:: 2016 1:

65

:

.,

, .

.

. .

,

. .

c , , ,

. –

, ; – ,

. – , – .

, , -

[1]. – .

. ,

. , ,

. x(t) , x 1 x 1,

x(t), , U .

–x x.

1. S.I. Denisov et. al, Phys. Rev. E. 68, 046132 (2003).

1: :: 2016

66

Proton Transfer Route in Spiropyran Molecule

Olga A. Kovalenko1, graduate student; Yuriy M. Lopatkin1, professor; Aleksandr A. Oblapenko1, student; Petro A. Kondratenko2, professor

1 Sumy State University, Sumy; 2 National Aviation University, Kiev

At present researches of photosensitive molecules become more

popular. Such molecules are used as molecular switches, thermal and chemical sensors, etc.

One of the brightest representatives of such molecules are spiropyrans. To identify the mechanism of photochromism processes of isomerization of the spiropyran molecules have been widely studied, but the influence of protonation on this process has been studied insufficiently.

In this work we considered protonation of the spiropyran molecule at the N and O atoms and calculated the potential surface of the proton transfer route from the nitrogen atom to the oxygen atom using semiempirical method AM1 of program packege MOPAC2012.

Fig.1 shows that, joining of a proton to N and O is almost equally probable. In a case when the proton is at nitrogen atom, the only obstacle to the merocyanine form is the barrier for proton transfer from N to O, which is about 2,5 eV.

Figure 1 – The dependence of the energy on the reaction coordinate at the proton transfer with forming the final products of reaction.

The cause of the barrier is discussed.

:: 2016 1:

67

:

., ; .,

, .

-

. ,

-.

), .

, , , .

, [1], – [2].

-

.

MH/kBT, M – , H – , kB – , T –

. , . ,

.

,

.

1. T.V. Lyutyy, et. al, Phys. Rev. E 92, 042312(9) (2015). 2. B.U. Felderhof, R.B. Jones. J. Phys.: Condens. Matter 15, S1363 (2003).

1: :: 2016

68

., ; ., ;

., , .

, , ,

, . , , ,

[1] .

,

.

, [1], . ,

,

.

, .

,

. , [2].

.

1. K.D. Usadel and C. Usadel, J. Appl. Phys. 118, 234303 (2015). 2. T.V. Lyutyy, et. al, Phys. Rev. B 91, 054425 (2015).

:: 2016 1:

69

Ag0.95Cu0.05GaGe3Se8, AgGa0.95In0.05Ge3Se8

AgGaGe2.85Sn0.15Se8

., ; ., ; ., ; .,

, .

.

. AgGaGe3Se8. AgGaGe3Se8

[1].

AgGaGe3Se8, Cu, In, Sn 100 – 300 .

=160 -1 .

, 100 – 300

. (dEg/dT) (8.5 9.5)·10-4 .

.

[2] (EU), ln( )=f(hv,T) ( 0 E0)

. EU 100 300 .

(g), 1.04, 1.06 1.08 u, In Sn

, , .

1. I.V. Kityk, A.O. Fedorchuk, P., et al., Mater. Lett. 107 (2013). 2. F. Urbach, Phys. Rev. 92 (1953).

1: :: 2016

70

, TlInSe2-GeSe2

., . . .; ., ;

.,

, .

TlBIIICVI

2 [1].

, ,

. ,

. ,

.

Tl1-xIn1-GexSe2 (x=0,1; 0,2) .

Tl1-xIn1-

xGexSe2 ( =0,1; 0,2) (

giE ) ( gdE ) , 100÷300 .

, GeSe2 ( In3+ S 4+) (V-

Tl) , .

[2].

Tl1-xIn1-xGexSe2 (x=0,1; 0,2) p . 0,1

0,2 .

:: 2016 1:

71

, 315 ÷ 270 K ,

[3]. ~ 0,33 0,29 x=0,1; 0,2; .

145<T<210 K

. Tl1-xIn1-xGexSe2 ( =0,1; 0,2)

[4]. =200 0,32 0,27

TlInSe2 – GeSe2 ( =0,1; 0,2) , [3].

, ,

. ,

. .

31 57 Tl1-xIn1-xGexSe2 (x=0,1; 0,2), .

1. M. Hanias, A. Anagnostopoulos, et al., Physica B 160, 154 (1989). 2. . . , . . , . . , . . ,

. . , . . . . . . . . 10(311), 27 (2015).

3. O. V. Zamurueva, G. L. Myronchuk, et al., Archives of Metallurgy and Mater. 60(3), 2025–2028 (2015).

4. G. L. Myronchuk, O V Zamurueva, et al., Mater. Res. Express. 3(2), 025902 (2016).

1: :: 2016

72

.,

, .

,

. , ,

, .

. -

[1],

. ,

. ,

, .

, .

,

, .

,

. ( ).

, .

: ., .

1. V. Leroy, A. Strybulevych, M. Lanoy, Phys. Rev. B. 91, 020301 (2015)

:: 2016 1:

73

.1, ; .2,

1 , .

2 , .

,

.

[1] , .

. [2]

ds ), H

b. ds ) (444), (888) (880)

, [111], Maple 13.

R c – ,

. d/d = 0:

ds ) = y0(R,c) + A(R,c)(exp(- /t1(R,c)) + exp(- /t2(R,c))).

. A(R,c),

y0(R,c) : A(R,c) = a1(c)Rb1(c), y0(R,c) = a2(c)Rb2(c), t1(R,c), t2(R,c) – .

1. . , . , . ,

: . : 1988).

2. . , . , . , ., . . 3, 37 (2014).

1: :: 2016

74

., ; .,

, .

–

, .

, ( , ,

, ). , ( , -

, , )

,

( , , ).

. , , ,

,

. ,

, -

, .

, , .

: ., .

:: 2016 1:

75

., ; .,

, .

, ( ) .

.

.

. , [1] ,

. [2]

.

,

[1].

1 –

.

, --

. -

-,

– -.

1. S.I. Denisov, H. Kantz, Europhys. Lett. 92, 30001 (2010). 2. Yu.S. Bystrik, J. Nano- Electron. Phys. 8 No 1, 01044 (2016).

1: :: 2016

76

1-

. ., , ., ,

., , ., .

. . , .

- , ,

, , [1-2]. ,

,

, , .

,

. 1-

(C3H7OH) 100 K . ,

, , , ,

1/T, 1/T .

,

1/T .

1. C. Talon, F. J. Bermejo, C. Cabrillo et al., Phys. Rev. Lett. 88, 115506-

1 (2002). 2. M.A. Ramos, C. Talon, R.J. Jimenez-Rioboo and S. Vieira, J. Phys.:

Condens. Matter. 15, S1007 (2003)

:: 2016 1:

77

C3H7OH

., , ., , . ., , ., .

. . , .

1/T. ,

« » [1, 2-3]. [2-3],

, ,

(T)=A/T+B, A/T , B –

) . T D.

, , « »

[1], , : = ph dif.

,

1- , ,

, , .

1. V.A. Konstantinov, Heat transfer in molecular crystals, In: Aziz

Belmiloudi (Eds.), Heat Transfer - Theoretical Analysis, Experimental Investigations and Industrial Systems, “InTech” Open Access Publisher (2011).

2. A.I. Krivchikov, F.J. Bermejo, I.V. Sharapova, et al., 35, 1143 (2009).

3. O.A. Korolyuk, 37, 526 (2011).

1: :: 2016

78

., ; ., ;

., ; ., , .

, , ( ).

( )

. ,

.

, . , ,

,

.

– , .

. ,

.

, , .

.

. . . ,

,

.

:: 2016 1:

79

: 1-

., , ., , ., , . ., .

. . , .

,

( ) , , .

,

.

1- (CH3CH2CH2OH)

[1]. 30 120 ,

1.5 K/ .

1- . ,

[2] 5% (P,T),

(7%). , , ,

, , 1/T, 1/T

.

, 1/T

.

1. . , . , . , 42, 145 (1999).

2. A.I. Krivchikov, F.J. Bermejo, I.V. Sharapova, et al., 35, 1143 (2009).

1: :: 2016

80

Prototype of Stable Molecular Switch

Anna G. Malashenko1, PhD student; Yuliya A. Shevchenko1, student; Yuriy M. Lopatkin1, professor; Tatyana N. Sakun2, ass. prof.

1 Sumy State University, Sumy 2 National Aviation University, Kiev

One of the goals of molecular electronics is search of structures that can

serve as the memory elements, switches, transistors and etc. As molecular switch may be a molecule

which has two conformations, the transition between them is made by an external exposure, for example, the electric field of different polarity. In order to work of element was stable, the molecule must has sufficiently high potential barrier between the two stable states.

As a result of studies, it was found that molecule of nitro peroxide of fluorine (NPF) applies to such molecules. The reversible transition between conformations occurs when an external electric field of 0.035 a.u. As a result, the torsion angle NOOF is changed to 180° (Fig.1).

Figure 1 – Dependence of the binding energy of the molecule NPF on the magnitude of the dihedral angle in the external electric field E = 0.035 a.u.

The height of the potential barrier separating these states, greater than 1.5 eV.

:: 2016 1:

81

np-

.,

, .

[1].

[2] - Argonne v18 1-

350 . .

np- 1S0-, 1P1-, 3P0-, 3P1-, 1D2-, 3D2- .

: Argonne v18 [2], v14, v8’, v6’ v4’ [3].

: mp=938,27231 MeB; mn=939,56563 MeB.

4- [4].

0,01. r>25 . 1 3 .

1-350 Argonne v18 ,

[2]. 1-400 Argonne v18, v8’,

v6’ v4’ [5]. np-

, S- , l>1.

1. . ,

: : 1988). 2. R.B. Wiringa, V.G.J. Stoks, R. Schiavilla, Phys. Rev. C 51, 38 (1995). 3. R.B. Wiringa, R.A. Smith, T.L. Ainsworth, Phys. Rev. C 29, 1207

(1984). 4. . , ( : : 1978). 5. M. Baldo, A. Polls, A. Rios, et. al, Phys. Rev. C 86, 064001 (2012).

1: :: 2016

82

.,

, .

[1]. [1] ,

. , 0 0r

: 1)

01

1 2 200 02

0

( ) (2 1)!!( ) ( )(2 1)!! ( 1)

2 !!

l rl l l

lkr lu r k r U r r drl l

; (1)

2)

1

00 1/ 2

0

( )2 1 !! ( )

ll

lrku r

l U r. (2)

2( ) 2 ( ) /U r mV r - , m - , 2 22 /k mE - , l - .

(1) (2), 1

0 0( ) lu r r , .

, 1S0-, 1P1-, 3P0-, 3P1-, 1D2-, 3D2- np-

Argonne v18 [2]. (1) (2).

1. . ,

: : 1988). 2. R.B. Wiringa, V.G.J. Stoks, R. Schiavilla, Phys. Rev. C 51, 38 (1995).

:: 2016 1:

83

., ; ., ;

., , .

. ,

. ,

7,2 3,4 2 . ,

,

.

-67, .

Microwave Studio.

, .

.

52.22.02-02.15/17 52.22.02-01.16/18 .

2 :

»

:: 2016 2: :

85

:

., . .

. . , .

, , , .

, , ,

. –

.

. Au (III) Au (0).

, -.

.

.

520 ,

. .

, .

50 .

.

2: : :: 2016

86

., . ; . . .;

., . . «

», .

), , ,

. , ,

[1].

- . –

.1).

- 1 , 24,48,72

, 24-72

11 .

, 90%.

. ,

, ,

, , ,

. : ., ., ; ., .

:: 2016 2: :

87

., ; ., ; .,

; ., «

», .

.

. .

.

. PTFE

.

. ,

. , .

. ,

.

.

.

.

1. A. Sanna, C. Hutter, D.B. Kenning, Int. J. Heat Mass Transfer. No 76, 45 (2014).

2: : :: 2016

88

Superhydrophobic/superhydrophilic switching on the surface of ZnO microstructures caused by UV irradiation and argon ion etching

process

Mostovyi U.R., Student; Rudyk Yu.V., Post-graduate student; Turko B.I., Head of laboratory; Kapustianyk V.B., Professor

Ivan Franko National University of Lviv, Lviv The superhydrophobic materials can be used in manufacturing of the

devices and things with the self-cleaning properties (such as solar panels, textiles and building materials, such as glass, tile etc.), coatings with a low friction (such as vehicles), anti-corrosion, anti-icing and antisticking coatings, lab-on-chip devices, drug delivery etc. The effect of a surface morphology on the wettability of ZnO microstructures controlled by the argon ion bombardment or UV light has been investigated. ZnO microstructures of diverse morphology (granular-like, microneedles and microoctapods) are investigated using the water contact angle (WCA) analysis. The samples with a larger surface roughness and surface-to-volume ratio were found to possess a significantly higher water contact angle and the time of transition from the superhydrophobic to the superhydrophilic state. As the most hydrophobic structures (WCA = 157°) would be consirered the complex microoctapods, containing both the macro- and nanoscale features.

Figure 1 – Change of the water contact angle for ZnO of diverse morphology with time upon: UV irradiation (a) and low energy argon ion bombardment (b).

:: 2016 2: :

89

.,

, .

.

. ,

( ) ( ) ,

. (Cu),

. – , .

Cu , ,

. , Cu

. .

, – 3 . % Cu.

+Cu .

3,0 . %. 0

5,0 . %

. , , ,

. .

/ .

2: : :: 2016

90

. ; ., . .- .

. . , .

. .

,

.

, .

,

(CN).

: ,

120 ° ); ,

( 300 ° ) ~ 3 . %;

– 120 ° 300 ° 4 %;

– 300 ° ~ 4-10 . %.

– 150 °C) ~ 10-25 . %;

;

, Ts

CN. .

:: 2016 2: :

91

., ; ., , .

( ). , ,

, , , , , .

.

, . ,

, , , .

. 1 « »

10 50 .

1 – « »

2: : :: 2016

92

., ;

., . . . , 23

.

. ,

, , ,

, .

. ,

, .

, , , .

. , ,

. , ,

. -

650-850 Ga-GaAs, , 3.5 , GaAs,

400 , . , ,

. ,

,

. .

:: 2016 2: :

93

.,

, .

-

. –

– « » –

, [1].

+Cu, -.

0 0,5 . %. [2]

ln = ln + ln , (1)

– , 298-353 =

. , .

+ 0,3 . % Cu, – + 0,1 . % Cu. ,

-, ,

. , + 0,1 . %

Cu + 0,5 . % Cu 2, .

1. . , . , 78, 11 (2008). 2. . , ., . ), 11, 2023 (2002).

2: : :: 2016

94

., ; ., « . »,

.

( ), ,

T = 400 ºC 30, 60 ,…, 210, 240 . t ( . 1),

, 90 .

1 – ( , ) (t, . T = 400 ºC)

(Ip).

,

60-120 , 100 .

: .,

:: 2016 2: :

95

., , .

.

. ,

. , ,

,

.

65, .

, , .

.

5083.

, ,

. ,

.

( ', ") = f( , T, M), tg = ( , T, M), v S = ( , T, M)

( ), ( ) ( ) . .

2: : :: 2016

96

– ,

., , .

,

. ,

; .

, - ( ) [1, 2].

, ,

.) ,

.

( ). ,

, .

1. . , . ., 2, 170 (2000). 2. . , 5, 81 (2012).

:: 2016 2: :

97

.,

, .

, ,

( ) .

( ) , .

( .1), ,

( ).

[1]. , ,

.

1 – ) , ) .

1. N.I. Kuskova, A.N. Yushchishina, et. al, Surf. Eng. Appl. Electrochem. 46,149 (2010).

2: : :: 2016

98

.,

, . . . , .

(Mo, Cu, NiCr) ( )

. , ( )

( ) ( ) [1]. , =

, =1,7 10-10 = 4 .

, , ( 3,0 5,0 .% (17÷31) )

. , =

. = ( ) -

( = 1,0 ) , ~ . = ( ); = ( )

: , = 0,936 ( ); , = 0,859 . ,

( , , ) ( , , )

[2], - , .

, ( ) ( ) .

1. . , . , . ,

: : 1990). 2. . , ( : : 1966).

:: 2016 2: :

99

FeF3 n H2O /C

., ; .,

. , .

( ). ,

. ,

.

FeF3 n H2O (n = 0; 0,33; 3), , -, -

23, 26 42 . FeF3 n H2O (n = 0; 0,33; 3) /

(20 %), . 1 LiBF4 .

1,5-4,5 0,1 .

, FeF3 0,33 H2O / ,

810 . FeF3 3 H2O / FeF3 / 515

598 . FeF3 0,33 H2O ,

FeF3 3 H2O FeF3, ,

.

: .,

2: : :: 2016

100

.1, ; .1, ; .1, ;

.1, ; .1, , .2, , .2,

1 . .

, . 2 « », .

, ,

. .

-, Op- Sisd K -, OK -,

SiL . -500

0,2 .

50, 300, 500 ( – , 50, 300, 500 – ( 2 )),

d 50 = 52 , d 300 = 8,5 d 500 = 5 (1 : 1),

.

, Si- ,

) , .

, SiL - OK

- Si-C-O

.

:: 2016 2: :

101

. ., . . ,

, , .

( ). ,

, .

, .

650 60 . 30 %

, 850-900 40 .

.

1 , -

. / 0,98.

, ,

.

1– (F/g) Ic/d (A)

0,0 0,1 0,2 0,3 0,4 0,5 0,6

140

144

148

152

156

160

C, F

/g

Ic/d, A/g

2: : :: 2016

102

-

.1, ; .2, ;

1 " ", .

2 . , .

:

( 3 2FeNO ×9H O , 3 2LiNO ×3H O , 3 2MgNO ×3H O ), ,

. 0.5 2.3 0.2 4Li Fe Mg O Fd3m

~ 35 . . 1 ( )

, , , .

, 1 1.42E , 2 2.46E ,

, .

1 – 0.5 2.3 0.2 4Li Fe Mg O

: .,

:: 2016 2: :

103

MD simulation of AlCoCuFeNi high-entropy alloy nanoparticle

Kushnerov O.I., Associate professor Oles Honchar Dnipropetrovsk National University, Dnipropetrovsk

High entropy alloys (HEA) are metallic compounds containing from 5 to

13 metallic elements in equiatomic ratios. In HEAs, because of the high mixing entropy, formation of brittle intermetallic phases is usually avoided and simple solid solutions are rather stabilized (BCC and/or FCC). This study used molecular dynamics (MD) package LAMMPS to simulate the AlCoCuFeNi nanoparticle (NP) crystallization.

The MD simulation was performed using an EAM potential and NVT ensemble. The simulated NP was composed of 50000 atoms (Al, Co, Cu, Fe, Ni in equiatomic ratio) and the average size of NP was ~ 10 nm. System was heated up to 2300 K and subsequently annealed at this temperature for 200 ps. After this, the NP was quenched from a molted state at a rate of 1 × 1011 K/s to 300 K. After quenching the radial distribution function (RDF) was calculated for determining the average structure. Also the adaptive common neighbor analysis (CNA) was performed to get a precise understanding of which atoms are associated with which phases.

By the CNA analysis it has been established, that the simulated NP contains the FCC phase (15,1 %), BCC phase (31,5 %), HCP phase (9,5 %)

and the unrecognized phase (43,9 %), which, in accordance with RDF, had an amorphous structure. The estimated BCC lattice parameter from the present

MD simulations is 0,290 nm and the FCC one is 0,365 nm.

a b

Figure 1 – Cross section of AlCoCuFeNi nanoparticle (a), calculated RDF patterns (b): – FCC, – BCC, – HCP, – other.

2: : :: 2016

104

/

.1, ; .2, ; .1,

1 " . ", .

2 " ", .

. 2, ,

.

( ). P25 (Degussa).

NH3·H2O, NaCl ( 0 , 0.17

0.25 – S0, S1 S2, ).

0,0062 .-1)

S0 ( - ). S1

, = 0,0168 . – 1, (

40 . %). S2 (

90 . %) -

, Degussa P25 (0,0449 0,0388 . – 1,

). S0, S1 S2 45,

48 57 2 , . ,

.

1 – ,

15 3, S1( ), S2( ), S3 ( )

Degussa P25 ( ).

:: 2016 2: :

105

- TiN/MoN

.

, .

, .

. TiN

N, TiN/M N. ,

, , .

.

. – 40 2

. – 230

TiN -Mo2N, .

,

. 2 : , LC1, ,

LC2. ,

TiN/MoN 8,4 8 .

,

, .

: .,

1. Pogrebnjak A.D., et al., Acta Phys. Polon. 125, 1280 (2014). 2. Beresnev V.M., et al., J. Friction Wear 35, 374 (2014).

2: : :: 2016

106

., ; .,

, .

[1].

[1, 2].

, ,

, [2, 3].

, .

0.4078 (Au) 0.4086 (Ag) ,

[2].

Au-Ag

300-1300 K. , ,

,

. Au-Ag

900 K.

: ., 1. R.G. Chaudhuri, S. Paria, Chem. Rev.112, 2373 (2012). 2. M. Tsuji, N. Miyamae, et al., Crystal Growth Design 6, 1801 (2006). 3. H.A. Alarifi, M. Atis, et al., J. Phys. Chem. C 117, 12289 (2013).

:: 2016 2: :

107

., ; .,

, . ,

, , .

, - ,

. .

. [1],

, , , .

, , , ,

. [1]

,

.

, [1]. ,

, ,

, ,

. ,

, .

.

1. H. Nguyen, D. Klotsa, et al., PRL 112, 075701 (2014).

2: : :: 2016

108

., ; ., ; .,

, .

,

.

.

[1],

. , , , ,

, ,

[2]. ,

. ,

. ,

, , .

.

. .

1. Y. Liu, Ch.-F. Guo, et al., J. Materiomics 1, 52 (2015). 2. . .,

: : 1988).

:: 2016 2: :

109

(TiZrHfVNb)N

.

, .

-

, .

. ( ) – ,

, . ,

5 35 . %. , , ,

, . . ,

, , .

. -

« -6». ,

(TiZrHfVNb)N. ,

. .

: , , , , .

: .,

2: : :: 2016

110

., ; .,

, .

,

, »[1].

,

, .

, , ( )

[2].

(Ti-Zr-Hf-V-Nb)N, [3].

,

[1]. ,

52.22.02-01.15/17. .

: ., 1. G. Gu, W. Zhou, Phys. Rev. E 74, 11 (2006). 2. J. Feder, Fractals (New York and London: Plenum press: 1998). 3. . , . ., . - . . 6,

04018 (2014).

:: 2016 2: :

111

Ti-W-C Ti-W-B,

.1, 2, ; .2,

1 , . 2 “ ”, .

“ – ” [1]

W-Ti-C Ti-W-B .

h = 1-1,7 , -

,

.

.

,

. ,

, ( ) ,

. “

” (

0115U000508, ).

1. B. R. Lawn, J. Mater. Res. 19, 22 (2004).

2: : :: 2016

112

.,

, .

( ), . , ,

[1], « » « »

. ,

,

, .

, , [2],

. ,

( 1-3 %).

« » « ». , [1],

, ,

. ,

.

: ., ; .,

1. . , ( : : 1990). 2. . , . , . , , 149

(2009).

:: 2016 2: :

113

NaCl Ag

., ; ., ;

., ; .,

« », .

– NaCl (400–1000 ).

Ag 10–80 .

Ag NaCl.

NaCl = 375 ,

Vk – . NaCl + Ag

= 530 ,

Ag, .

[1, 2], ,

.

Ag , , ,

.

1. C. Noguez, J. Phys. Chem. C. Vol. 111, 3806 (2007). 2. D. Lantiat, D. Babonneau, S. Camelio, F. Pailloux, J. Appl. Phys. 102,

113518 (2007).

3

- »

3: :: 2016 -

115

Co/Dy/Ni

., , .

(R) (T)

.

Co, Ni Dy .

/Co(20)/Dy(n)/Ni(5) .

( ) 4- .

= 600, 800 1000 .

,

. 0,6 %

/Co(20)/Dy(30)/Ni(5) .

. 600 800

. (S)

/Co(20)/Dy(30)/Ni(5) . ,

/Co(20)/Dy(30)/Ni(5) S 0,0025 %/ . 0,004 %/ .

,

.

:: 2016 3: -

116

: .,

.,

, .

, , , . ,

, .

, ( ).

, ,

, – (p), (r) (Qij).

. ,

, p, r Qij. , Pd, Fe Pd/Fe/ ( -

) 10 [1]: PdB – 1,4 10 – 2 – 1 ( 1,4 %/ ); Fe

B – (2,5-5,0) 10 – 2 – 1; Pd/FeB – 2 10 – 2 – 1 .

(0,7-7,7) %/T ( [Fe/Cr/Fe]n (n = 3-7)) – (3,0-8,7) %/ ([Fe/Cu/Fe] n (n = 3-9).

,

%/ .

1. I.Yu. Protsenko, L.V. Odnodvorets, S.I. Protsenko, M.O. Shumakova, Problems Atomic Sci. Technol. No 1 (101), 121 (2016).

: ., ;

3: :: 2016 -

117

., o/Ag/Co

., ; ., ;

., , .

Co Ag, 700-900 .

[1].

Co/Ag/Co/ ( ) , -Ag = 0,407 0,250 .

700 ( .) -(Ag,) Ag,

, ,

. = 15-90 . % ,

40-60 . %.

Ag .

Ag ( ) .

700-900 15 40 .

(BS) 0 -90

10 20 ( ) 10 25 (BS). .

1. . , . , . , 13 4, 907

(2012).

:: 2016 3: -

118

., ; .,

; ., , .

. – ,

5 35 . % 11 /( ).

. ,

. 100 .

- 10 – 4 .

0,04-0,06 . .

300 . : /Fe/Ni/Cu/Co/Al/Cr, /Fe/Ni/Cu/Co/Al/Cr/Ti, /Ni/Fe/Cr/Co/Cu/Al,

/Ni/Fe/Cr/Co/Cu/Al/Ti.

0° 90° ( 0,12 % 0,07 %)

Bc ( 129,31 14,16 ). 800 Bc

, .

: .,

3: :: 2016 -

119

., ; ., ; .,

, .

( ) . : ,

.

, .

. ,

1 : 10.

, ,

( -125 ). (10-20)·103 . ( . 1 )

,

( , .). ,

( .1 ).

1 – .

:: 2016 3: -

120

1 – .

n 1012, 1/ 2

l, D,

0,5 3530 74 70-74 0,67 2940 64 61-64 0,93 2650 60 57-60 0,57 2280 96 93-97 0,79 1840 63 60-63 2,2 1420 26 22-25 2,1 1080 46 42-46 2,7 720 29 25-29 4,0 520 30 26-30 7,7 380 23 19-23

1. ,

.

1. . , . , . ,

, ( .: , 2008).

3: :: 2016 -

121

60

., ; ., ; .,

, .

60 , ,

, -

.

60 .

.

. - ( . 1)

, L = 50 .

1 – ( )

( ).

, 50 ,

70 .

:: 2016 3: -

122

Co, Ag Fe20Ni80

.,

, .

, , , ,

. ,

, .

.

Co(5)/Ag(dAg)/FeNi(30)/ ( ).

-5 . 5 12 ,

.

, . ( , %) : = [(R(B)–Rs)/Rs]·100 %, Rs –

; R(B) –

. , .

dAg = 6 , 0,26 %.

560 ( )

, , , 0,41 %.

52.20.01-01.16/18 .

: .,

3: :: 2016 -

123

Ru

., ; ., , .

Ru

. VIII

(Co, Fe Ni) .

, Ru

, .

Ru 10 80

20 . , Ru

= 400-700 dRu 40 . ,

- Ru . -RuO2,

= 700-1000 . , , ,

L = 10-15 .

0 =

7,15 10 – 7 , . , Ru (45 )

= 3,8 10 – 4 , 1000 = 1,4 10 – 5 . = 700

. Ru

0 = 4,2 10 – 5 – 1.

: .,

:: 2016 3: -

124

Fe Au

., ; .,

, .

, -

Fe Au, .

- Au/Fe/ Fe/Au/Fe/ ( – )

( 5-30 ). ,

Fe 60 . %,

s . T = 700 K

s .

Fe Au .

[Au(3)/Fe(3)]n ( , n – )

Au/Fe/Au/[Au(3)/Fe(3)]x . ,

s . Fe

Au, , ( 300-700 ) . ,

Fe(6)/Au(8)/Fe(20)/ Fe(6)/Au(8)/[Au(3)/Fe(3)]6 ,

T = 700 K. 52.20.01-01.16/18

. : .,

3: :: 2016 -

125

CoNi Cu

.,

, .

, ,

. . 1 ( )

CoNi/Cu/CoNi.

1 – ( ) ( )

Ni/Cu/ Ni ( =

50 . %, d1 Ni = 40 , d2 Ni = 30 d u = 8 ). ( . 1 )

. 0,3-0,5 %.

. 150

( . 1 ).

: .,

:: 2016 3: -

126

, Ni Dy

., ; ., ; .,

, .

,

.

, .

-,

Ni(5) / Dy( ) / Ni(20) / ( , Dy, 1 30 ).

( 460 ).

« » = 700 .

( -125 ).

I = 0,1 = ±500 .

.

Ni Dy ,

. Ni -Ni,

700 . Dy,

dDy 15 .

3: :: 2016 -

127

dDy 15 -Dy. , Dy

: -Ni + -Dy (dDy 15 ) -Ni + -Dy

(dDy 15 ). 700 -Dy ,

-Dy2O3,

, ,

Dy .

. [1]

.

5-10% .

, Dy 20

, .

. Dy 1 30

,

, .

700 Mr Ms 5 8 %, .

: .,

1. . , . , . , . ,

. - . . 4 4, 04026 (2012).

:: 2016 3: -

128

Cd1 – xMnxTe

., ; ., ; ., ; ., ;

., , .

Cd1 – xMnxTe

, .

, Cd1 – x ZnxTe, CdTe

. , , Cd1 – xMnxTe

, . Cd1 – xMnxTe

-5 . CdTe Mn

. Ts = (623-823) ,

Te = 1123 .

4-07 Ni- K .

, Ts < 773

Cd1 – xMnxTe . Ts = 623

. Ts = 823 MnTe, .

Cd1 – xMnxTe MnTe.

, . , Mn

0,98 25,76 . %.

Cd1 – xMnxTe .

3: :: 2016 -

129

Zn2SnO4,

., ; ., ;

., ; ., , .

, .

(Zn2SnO4). ITO, SnO2, ZnO.

, , , ,

. , ,

– .

. Zn2SnO4

Ts = (250-450) . ( V),

. DAX

Hitachi S-4800.

Zn/CO, Zn + Sn/CO. , Ts

Sn 15,93 3,10 . % 350 , 9 . % 450 . ,

Zn + Sn/CO ( , Sn Zn ) (Ts = 250 ) 0,19

0,37-0,49 Ts. ,

, , .

:: 2016 3: -

130

., ; ., ;

., . , .

, , . ,

, Cr (VI).

Cr ( I), .

, Cr Cr(III).

Cr2(SO4)3 , Cr - SO4 7H2O KCr(SO4)2 12H2O [1].

,

. Cr – (0,2-0,4) 104 2,

270 2, , Cr L (70-75) Å.

r : (8-10) 104 2, pH 2,5-3,5; t – 296-270 ;

r 4 10 – 2 2 ; - r.

- . 2,2

3,7 .

1. N.I. Shumakova, Z.M. Protsenko, NAP-2012 1 No 3, 03TF11 (2012).

3: :: 2016 -

131

.1, ; .2,

1 , . 2 , .

. ,

.

.

.

. por-InP [1].

CdS / CdTe. [2] 1

, .

CdS / CdTe / por-InP :

;

, .

1. Y. Suchikova, Handbook of nanoelectrochemistry 1, 283 (2016). 2. G.S. Khrypunov, T. Li, N. Deyneko, et al., Technical electrodinamics 1,

336 (2011).

:: 2016 3: -

132

., ; .,

, .

VII , ,

.

.

(MgO)x(P2O5)y Mg (1-10 %).

(MgO)x(P2O5)y, Mg.

-10 337 .

-12 20 ,

( ). ~ 672 ,

.

, Mg ,

.

. .- . ., . . .

3: :: 2016 -

133

Mo, Pb Mg

., ; ., ; ., ; ., ; .,

. . , .

.

[1]. ,

( 0) ( 1200 ). [2].

( ) - ( ) . ZnO

– 98 . %. 930 1170 .

MnO MoO3 2-3 0 = 930 .

Co2O3 Mg 1,5

. TiO2 MgO 7,3 10 – 2

) – 1 0 = 1170 . – Bi2O3.

MoO3

. MgO, , ZnO .

1. A.Yu. Lyashkov, Ukr. J. Phys. 59 No 8 (2014). 2. . , . ,

( : : 1983).

:: 2016 3: -

134

-Ga2O3

., ; ., , .

-Ga2O3, ( ) .

-Ga2O3 ,

. ,

[1] .

1 – -Ga2O3 5,05 , = 295 .

– .

3,14 2,95 .

3,14

2,95 . ,

(VOVGa) . : . .,

1. . , . 59, 3 (1972).

3: :: 2016 -

135

Cd(Mn)Te

.1, ; .1, ; .2, ; .1,

1 , . 2 , .

,

Cd(Mn)Te Cd(Zn)Te,

, . – ,

Mn CdTe 1.

.

. – .

Cd(Mn)Te.

(Cd0.95Mn0.05)Te, , Cd, Mn

Te . .

5 109 , ~ 105-106 – 2, .

2- 900 .

10-20 , 3 18 . Leitz, Pixelink PL-A741.

, , ) ,

, ( ).

. ,

.

:: 2016 3: -

136

Cd(Mn)Te

., ; ., ;

., ; ., , .

,

Cd(Mn)Te -

.

Cd(Mn)Te ( ) .

Cd0,95Mn0,05Te (8 × 8 × 5 3), ,

. - ( ).

45 120 .

0,5 . ( ) 6-30 . %.

HAuCl4. ,

6 20 . % 3,5 o 10 .

. 20 . %

, .

, . Cd0,95Mn0,05Te

, CdTe .

3: :: 2016 -

137

Cd1 – xMnxTe

.1, ; .1, ; .2, ;

.1, ; .1,

1 , . 2 , .

,

. .

(F) Cd1 – xMnxTe : n (0,15 0,02)

( -28, -20, -10, -5) ( -5/3 -3/2),

(95 % HBr + 5 % ) .

( ) .

.

F: -28 – F = 49 52 ; -20 – F = 34 37 ; -10 – F =19 22 ; -5 – F =11 13 ; -5/3 – F =10 12 ; -3/2 – F = 7 9 .

F ( 1 ) - ( : -H2O2-NaOH-H2O)

. ,

Cd1-xMnxTe: n, . ,

F, , .

, Cd1 – xMnxTe :

n .

:: 2016 3: -

138

Cd1 – x – yMnxZnyTe (x = 0,05-0,25, y = 0,10-0,15)

., ; ., ; ., ; .,

, .

CdTe-MnTe-ZnTe

AIIBVI[1]. ,

. ,

Cd1 – x – yMnxZnyTe, Cd1 – x – yMnxZnyTe x = 0,05-0,25,

y =0,10-0,15 ). Cd1 – x – yMnxZnyTe x = 0,05-0,25, y = 0,10-0,15

Cd, Mn, Zn Te .

1155 ° . 5 . ,

. 500 .

, Cd1 – x – yMnxZn yTe x = 0,05-0,25, y = 0,10-0,15

.

, , Cd0.90 – xMnxZn0,10Te 5-

10 ° , Cd0.85 – xMnxZn0,15Te (x = 0,05-0,25). , ,

, .

1. W.C. Chou, F.R. Chen, T.Y. Chiang, H.Y. Shin, J. Crystal Growth 169, 747 (1996).

3: :: 2016 -

139

n-InSe

.1, ; .2, , .2, , .1,

; .1, 1 ,

, . 2 , .

(10 )

(1 1014, 5 1014, 1 1015 2) n-InSe .

(80 400 ) ( )

( ) . , 80 300

. ,

. = 1 1014 2 250 RH ,

, . RH .

. , 80 /

106 = 5 1014 1 1015 2. ,

- . ,

2D , InSe

. 2D , .

, .

/ , ,

.

:: 2016 3: -

140

InSe

., ; .,

. . , , .

[email protected]

InSe .

InSe- ,

. ,

. -6 ,

22 .

,

n-InSe.

, -.

, . InSe-

(0,4-1,2 ).

. 1 InSe.

,

InSe.

1 – InSe.

3: :: 2016 -

141

TlPb2Br5 – I

.1, ; .2, ; .1, ; .3, ; .1, ;

.1, 1 ,

. 2 ,

.

3 . , .

2TlI + PbBr2 2TlBr + PbI2, ,

TlPb2Br5, TlPb2Br5 – TlPb2I5.

, I4/mcm, ,

, 24-90 . % TlPb2I5 300 K. 80 . % TlPb2I5,

TlPb2BrI4, 611 . TlPb2Br5

10 . %. 90-100 . % TlPb2I5 .

TlPb2Br5 – I -. ,

. 100-

300 ( = 350 – 1) Eg ( 1).

1 – TlPb2Br5 – I T, K , .% TlPb2I5)

40 50 60 70 80 100 2,67 2,65 2,61 2,59 2,55 200 2,61 2,59 2,56 2,53 2,50 300 2,53 2,52 2,50 2,48 2,44

:: 2016 3: -

142

Tl3PbBr5-Tl3PbI5

.1, ; .2, ; .3, ; .1, ; .1, ;

.1, ; .1, 1

, . 2 ,

.

3 . , .

, .

Tl3 5 639 ( ) P212121. Tl3PbBr5

665 . ( ) , ( )

P41. Tl3PbBr5–Tl3PbI5,

, 17 .

. Tl3PbBr5-Tl3PbI5 . Tl3PbBr5 Tl3PbI5 0-4 . % 80-100 . % Tl3PbI5

. , Tl3PbI5 Tl3PbBr5

, 300 10-74 . % Tl3PbI5. ,

.

. - Tl3PbBr2.5I2.5.

100-300 Eg, 2.45 100 2.36 300 .

p-GaTe - n-InSe .,

. . , , , .

3 6,

, .

.

Ga6Te5 In1.03Se0.97. GaTe 400 ° 4 . p-GaTe – n-InSe

GaTe InSe.

Ga2O3 p-GaTe -

n-InSe.

.

( . 1 ) ,

:

InSe, – GaTe.

InSe , , .

( . 1 ) ,

1,07.

-n .

1 – C

( ) ( )

-GaTe - n-InSe

3: :: 2016 -

144

Ag8SnSe6

., « », .

. .

Ag8SnSe6. Ag8SnSe6 15 ,

3 , 45 .

90 .

- :

26 1 + 26 1 + 19 2 + 19 2, (1)

( 1, 1, 2) , .

( . 1) - Z- .

1, 1, 2.

1 – Ag8SnSe6.

:: 2016 3: -

145

,

., ; .,

; ., . ,

.

, .

MgO 2Al2O3 0,2 0,5 . % (

). 15-20 20-50

.

200-800 .

800 490 , - .

4 .

- , ,

Mg2+ Al3+, . MgO 2Al2O3

Al3+ , .

Ti3+ Ti4+ , Mg2+ Al3+, ,

. , 1,5 Ti4+ Ti3+ [1].

Ti4+ + Fie2+ Ti3+ + Fe3+.

1. A. Jouini, H. Sato, et al., J. Crystal Growth 287, 313 (2006).

3: :: 2016 -

146

.C., ; ., ;

., . . ,

.

– ,

[1]. [2].

,

.

900 . .

ZnO Li2CO3 ». 0,1 3 %

. , . 100

12 4 . 900 1 .

0,1 % Li2CO3 1,3 10 – 5 2,3 10 – 9 ( ) – 1.

9,1 10 – 8 ) – 1.

, , 2-3 .

. 1. T.K. Gupta, J. Am. Ceram. 73 No 7 (1990). 2. . , . , . , . , .

, . , . , 97, 5-6 (2013).

:: 2016 3: -

147

InSe

., ; .,

, , .

( )

. - InSe

,

( ). InSe ,

( ) , nSe.

nSe:Zn (p 1,0 1013 – 3, 5,0 10 – 6 – 1 – 1, 25 2/(B c))

= 420 C . 60 . InSe

Rs 220-230 . 1-34 Me .

1012-1016 c – 2, 14 -140 . , 1012-1013 – 2

( 3,1 2,7 %). 1014-1015 – 2

1,2-0,1 %. Rs. ( 0,4 %).

nSe,

. 5 %.

, InSe, , .

, nSe, ,

.

3: :: 2016 -

148

., ; ., ; ., ;

., , .

. , , . ,

( ) :

, .

, , -8-200 (

350-800 ) -25 ( 200-350 ).

-8-200

. -25 -8-200.

,

:

...

. 2)(DS

SIN (1.1)

hS , l – , h – .

:: 2016 3: -

149

0

.II (1.2)

0 – ;

I – ;

I – .

2

22 1 cos 2 1 1 rL

(1.3)

– ; r – ; L – ;

0S – , ; I – .

, ,

As2S3, -8 (N1) (N2),

Se/As2S3, Te/As2S3 Bi/As2S3 200 800 ,

: N1 = 1,75 10 – 3 ., N2 = 7,57 10 – 4 ., N3 = 1,8 10 – 3 . N4 = 8,8 10 – 4 ., N5 1,3 10 – 3

.

3: :: 2016 -

150

Al – 28.5 . % Ge – 1.5 . % Si

.,

. , . ,

, .

,

. Al – 28.5 . % Ge –1.5 . % Si

, 15 . 105 .

, 80-100 , 1.

1 – Al – 28.5 . % Ge – 1.5 . % Si.

20 % .

. , 200 ,

, 400 .

:: 2016 3: -

151

Tl Ga Se2

., , . ,

Tl Ga Se2 .

. . ,

. 300 .

0,25 ÷ 0,45 , , 2,7·10 – 3 1,2·10 – 2 2.

,

.

.

Tl Ga Se2 .

(Eg) , .

, Tl Ga Se2 2,15 .

: .,

4

»

:: 2016 4:

153

Diode temperature sensors with tunable sensitivity

S.Yu. Yerochin, Researcher; A.N. Demenskiy, Jr. Researcher; V.A. Krasnov, Sr. Researcher; S.V. Shutov, Sr. Researcher

V. Lashkaryov Institute of Semiconductor Physics NASU,

Laboratory 23, Kherson We investigated the possibility of using of AlGaInP heterostructures

with p-n junction as diode temperature sensors having quasi-linear dependence of the forward voltage drop on the ambient temperature at the fixed direct current. Thus we measured the current-voltage characteristics of the p-n structures in the temperature range 293-550 K. Using the data obtained we calculated the differential current thermal sensitivity of the structures mentioned. A semilogarithmic plot of the thermal sensitivity vs. forward current dependence is presented in the figure. As one can see from the graph plotted the dependence has a characteristic property: there are

three distinct sections in it having different slopes. This means that there are different current transport mechanisms that predominate in each section. At the lowest current ( 10 – 8-10 – 7 A) the current transport is dominated by tunneling, then one can observe mixed tunnel-recombination current

transport mode ( 10 – 7-10 – 4 A) and at further current rise ( 10 – 4 A) the diode gradually passes into recombination mode with appreciable influence of the series resistance at I 10 – 3 A.

All of this allows to conclude that it is possible to design temperature sensor based on the AlGaInP p-n heterostructures with tunable thermal sensitivity [1] by changing the magnitude of the forward current through the diode.

1. Yu. M. Shwarts, Physical fundamentals of the semiconductor devices of extreme electronics. (Dr. of Sci. Thesis, Kyiv: V. Lashkaryov ISP NASU: 2004).

1,5

2

2,5

3

3,5

4

4,5

5

5,5

6

6,5

0,001 0,01 0,1 1 10 100 1000

I f , A

s , mV/K

4: :: 2016

154

The measurement of LF noise spectral exponent of optocouplers by three-point method

Reschikoff S.E., PhD Student

Ulyanovsk State Technical University, Ulyanovsk, Russia

In the electronics low-frequency (LF) noise often used for reliability

estimation of semiconductor devices. Spectral exponent of noise may be used as an informative parameter. The simplest method of exponent measurement is to measure power spectral density (PSD) of noise on two frequencies [1]. Then the noise spectral exponent is

= ln(G1/G2)/ln(f2/f1), (1)

where G1, G2 are PSDs; f1, f2 are corresponding frequencies. To eliminate the influence of white noise the method of exponent

evaluation by three points of spectrum is proposed:

m = logk((G1 – Gadd)/(Gadd – G2)), (2)

where Gadd is PSD of LF noise on additional point; k = (f2/f1)1/2. For investigation HCNR200 high linearity analog optocouplers of

Avago Technologies were chosen. We performed electric noise measurement of LED in 10 samples of optocouplers. Noise measurements were carried out by noise generator method. Measurement setup mainly consists of G2-37 noise generator and selective nanovoltmeter Unipan 233.

Input current was set at 5 mA. The relative effective bandwidth (– 3db) of analyzing filter was set at 0.2. We measured PSD of noise on three frequencies: 200 Hz, 1000 Hz and 5000 Hz. And then we calculated spectral exponent values by (1) and by (2). We found, that mean value of is 1.11 for calculating by (1), and is 2.16 for calculating by (2). And standard deviations are 0.22 and 0.24 respectively.

So, it is obviously, that results of spectral exponent measuring by two frequencies may be extremely doubtful. Therefore, it is necessary to develop measurement setups based on a formula (2).

Supervisor: Sergeev V.A., Docent

1. M.I. Gorlov, D.Yu. Smirnov, N.N. Koz’yakov, Semiconductors 43, 1737 (2009).

:: 2016 4:

155

., ,

,

, , , , ,

, .

.

[1], :

, - .

, .

,

, 900. . ,

, .

. .

: .,

1. . , 3, 15 (2014).

4: :: 2016

156

. ., « », , .

,

( ). .

, ( ).

, .

, ,

, .

G, LabVIEW.

LabVIEW . 1.

1 – .

, , ,

.

.

:: 2016 4:

157

.,

», .

,

(Minelab, Fisher, Garret .).

, .

.

. 1).

1 – ( , ) ( , ) (a, ) ( , ).

,

– 40 .

: .,

4: :: 2016

158

., ;

, ; ., « », .

( ), ,

.

. ,

Falcon Eyes SS 150BJ,

2 2. .

, MOSFET

IRFZ48Z, (0,011-0,012 )

.

RIGOL DS1052E,

.

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= (7,8-9,0).10 – 5 – 1), W/Ti

.

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:: 2016 4:

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175

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65 .%, -FePd3) i [Pd(0,4)/Fe(0,6)]10 (cPd = 45 . %, -FePd) i i

Pd. Fe Pt . i

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2,5 i i 2 10.

1. F.J.A. den Br eder, H.C. D nkersl t, H.J.G. Draaisma, W.J.M. de nge, J. Appl. Phys. 61, 4317 (1987).

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177

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4: :: 2016

178

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: .,

1. Ia.M. Lytvynenko, I.M. Pazukha, O.V. Pylypenko, V.V. Bibyk, Metallofiz. Noveishie Tekhnol. 37 8, 1001 (2015).

:: 2016 4:

179

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Fe = 25-50 . %

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. ( . 1)

: ; l = 0,2 %

( ( l ) ), , ,

.

1 – R/R l l l ( )

l = 0-2 % Ni80Fe20(19)/ .

: .,

1. K.V. Tyschenko, I.Yu. Protsenko, Metallofiz. Noveishie Tekhnol. 34

7, 907 (2012).

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180

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., ; .,

, .

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[1],

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– 20 .

, , Ni = 40-

60 . %. , ., ,

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: .,

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181

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AGC IF Amplifier 33 (2007). 5. . ,

: : 1976).

СЕКЦІЯ 5

«Електронні системи, прилади і

засоби кодування інформації»

5: , :: 2016

184

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n-ZnS(ZnSe)/p-CZTS ZnO : Al.

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ZnO = 3,37 , EgZnS = 3,7 , Eg

ZnS = 2,7 ), ,

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d , n-ITO(ZnO)/n-CdS(n-ZnS, ZnSe)/p-CZTS/ , .

, ITO (ZnO), CdS (ZnS,

ZnSe). , = 450-900 , d = 50

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:: 2016 5: ,

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:: 2016 5: ,

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5: , :: 2016

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196

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40 , t0,1

25 ).

1. S. Stepenko, O. Husev, D. Vinnikov, S. Ivanets, 13th Biennial Baltic Electronics Conference, 263 (2012).

2. . , . , . , . ,

( : : 2013).

:: 2016 5: ,

197

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. , 74164 (t = 13…14 ), , 2-3

– 555 8 (t = 27…36 ).

.

1. S. Stepenko, O. Husev, D. Vinnikov and S. Ivanets, 13th Biennial Baltic Electronics Conference, 263 (2012).

2. . , . , . , . ,

( : : 2013).

5: , :: 2016

198

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– , , 7 ( . 1). –

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(S–Q3) = 16,4 .

1 – .

1. S. Stepenko, O. Husev, D. Vinnikov and S. Ivanets, 13th Biennial Baltic Electronics Conference, 263 (2012).

2. . , . , . , . ,

( : : 2013).

:: 2016 5: ,

199

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:: 2016 6:

214

Research of frequency generator for vibroacoustic therapy device

Bazilo C.V., Associate Professor; Medianyk V.V., Student Cherkasy State Technological University, Cherkasy

The piezoceramic transducer ia an electroacoustic device capable of

reproducing sound by inverse piezoelectric effect. Piezoceramics has its universal properties and are widely used in various fields of engineering.

A lot of experiments have been carried out in the field of vibroacoustic therapy to find the most effective sound frequency. A great contribution to the development of vibroacoustic therapy was made by O. Skille. He spent more than 40 thousand hours to find out. And he identified the most effective frequency range, which is between 40 and 120 Hz. The properties of piezoelectric electrodes gave the opportunity to use them as the best option in vibroacoustic therapy.

One of the disadvantages of the piezoelectric electrodes was rather hard frequency regulation of the device and also the large error during the manual frequency regulation. A frequency synthesizer microcontroller unit can be proposed as the solution of this problem. This makes it possible to automate the operation of the vibroacoustic therapy device and also to create multiple modes of the device, with different ranges of frequency. This also gives an opportunity not only to simplify the work for the user, but also to increase the versatility of the device. As it is known, the frequency synthesizer has a wide range frequencies and a high precision. The installation of frequency synthesizer into the scheme of the device will significantly reduce the error in the choice of frequency.

All of the above will help to create a fairly universal vibroacoustic device with a wide range of frequencies, maximum precision and ease of use. It can be used for therapy, massage or other medical purposes. Also new device can be used not only at hospitals by the medical staff, but also at home by users without mandatory medical education.

1. . Boyd-Brewer, Vibroacoustic therapy: sound vibrations in medicine.

Alternative & Complementary Therapies 9(5), 257 (2003). 2. K.V. Bazilo, V.V. Medianyk, Research of Piezoelectric Adders for

Vibroacoustic Physiotherapy (2015).

6: :: 2016

215

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6: :: 2016

217

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:: 2016 6:

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:: 2016 6:

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6: :: 2016

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