Evolution of the charge density wave in Sulfur substituted 1T-TiSe 2 A combined ARPES and STM/STS study M.-L. Mottas, T. Jaouen, B. Hildebrand, E. Razzoli, G. Monney and P. Aebi DFT calculations : D. R. Bowler F. Vanini Growth of Single Crystals : E. Giannini, C. Barreteau University of Fribourg London Centre for Nanotechnology University of Fribourg University of Geneva
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Evolution of the charge density wave in Sulfur substituted ... · STM/STS x = 0.12 • x = 0.34 T CDW = 185 K ± 5 K T CDW = 195 K ± 5 K E E F k Γ M E E F k Γ M x = 0.12 x = 0.34
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Evolution of the charge density wave in Sulfur substituted 1T-TiSe2
A combined ARPES and STM/STS study
M.-L. Mottas, T. Jaouen, B. Hildebrand, E. Razzoli, G. Monney and P. Aebi DFT calculations : D. R. Bowler F. Vanini Growth of Single Crystals : E. Giannini, C. Barreteau
University of Fribourg London Centre for Nanotechnology University of Fribourg University of Geneva
Charge Density Wave
Superconductivity
F. Di Salvo, PRB, vol. 14, 4321 (1976)
Cu doped 1T-TiSe2
E. Morosan, Nat. Phys. 2, 544 (2006)
Under pressure
A. F. Kusmartseva, PRL, vol. 103, 236401 (2009)
TCDW ~ 200 K, new 2x2x2 structure F. Di Salvo, PRB, vol. 14, 4321 (1976)
vdW gap
Se
Se
Ti TiSe2-xSx
x
In Ti self-doped 1T-TiSe2
B. Hildebrand, PRB, vol. 95, 081104 (2017)
0%
2%
Ti self-doped 1T-TiSe2
Anomalous resistivity
Local resilience of the CDW
1T-TiSe2 : an intriguing compound
Motivation
Charge Density Wave
Superconductivity
Cu doped 1T-TiSe2
E. Morosan, Nat. Phys. 2, 544 (2006)
Under pressure
A. F. Kusmartseva, PRL, vol. 103, 236401 (2009)
TCDW ~ 200 K, new 2x2x2 structure F. Di Salvo, PRB, vol. 14, 4321 (1976)
vdW gap
Se
Se
Ti
TiSe2-xSx
Local resilience of the CDW In Ti self-doped 1T-TiSe2
B. Hildebrand, PRB, vol. 95, 081104 (2017)
Influence of Sulfur on the transition temperature and CDW behavior?
x≈0%
x≈200%
F. Di Salvo, PRB, vol. 14, 4321 (1976)
Sulfur doped 1T-TiSe2
Anomalous resistivity
1T-TiSe2 : an intriguing compound
Motivation
1x1 2x2
The topmost layer of 1T-TiSe2 is a Se layer.
Vbias=-1 V Vbias=0.15 V
Real space
STM on 1T-TiSe2-xSx
Characterization of samples 1T-TiSe2-xSx
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
Identification of S atoms
Characterization of samples 1T-TiSe2-xSx
S Sevac S
Z (
pm
)
profile (nm)
S substitution – Se vacancy distinction
S
Sevac
S
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
Identification of S atoms
Characterization of samples 1T-TiSe2-xSx
Vbias+0.6 V Vbias+0.3 V
Vbias-0.5 V Vbias-1.0 V
Sulfur depletion of ῀ 14 pm
Topographic effect
S2- Se2-
14 pm
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
Identification of S atoms
Characterization of samples 1T-TiSe2-xSx
Vbias+0.6 V Vbias+0.3 V
Vbias-0.5 V Vbias-1.0 V
Sulfur depletion of ῀ 14 pm
DFT simulation*
Vbias+0.6 V
Measured image
Vbias+0.6 V
Topographic effect
S2- Se2-
14 pm
Identification of S atoms
*D. R. Bowler, London Centre for Nanotechnology
Characterization of samples 1T-TiSe2-xSx
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
x = 0.12 x = 0.34
Precise determination of Sulfur concentrations
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
Characterization of samples 1T-TiSe2-xSx
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
x = 0.12 x = 0.34
Precise determination of Sulfur concentrations
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
Ensure negligible Intercalated-Ti concentration
Characterization of samples 1T-TiSe2-xSx Effect of intercalated-Ti
Vbias-0.05 V, It=0.2nA, 17x17 nm2 at 4.5 K
Vbias0.1 V, It=0.2nA, 17x17 nm2 at 4.5 K
Ensure negligible Intercalated-Ti concentration
Phase-shifted domains : break of the CDW long-range coherence
~ 2.5 % intercalated-Ti (no sulfur)
~ 1.2 % intercalated-Ti (no sulfur)
B. Hildebrand, PRB, vol. 93, 125140 (2016)
Characterization of samples 1T-TiSe2-xSx
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
x = 0.12 x = 0.34
Precise determination of Sulfur concentrations
Less than 0.2% of intercalated-Ti effects of Sulfur substitution only
Vbias+0.6 V, It=0.15nA, 15x15 nm2 at 4.5 K
Characterization of samples 1T-TiSe2-xSx Long-range coherence of the CDW
What about ARPES measurements ?
Long-range coherence of the 2x2 in-plane electronic modulation
Inexistence of phase-slip
Vbias+0.15 V, It=0.15nA, 15x15 nm2 at 4.5 K
Vbias+0.15 V, It=0.15nA, 15x15 nm2 at 4.5 K
x = 0.12 x = 0.34
H A
Γ
L
K M
L
A
Γ
M
K
ARPES on 1T-TiSe2
Brillouin zone of the 1x1x1 structure
Top view near-EF band structure
Reciprocal space
H A
Γ
L
K M
L
A
Γ
M
K
ARPES on 1T-TiSe2
Brillouin zone of the 1x1x1 structure
Top view near-EF band structure
T-dependent ARPES study from TROOM to 10 K
UPS with He I, Eh= 21.2 eV (close to A and L points)
Reciprocal space
H A
Γ
L
K M
L
A
Γ
M
K
E
EF
k
Γ
ARPES on 1T-TiSe2
Brillouin zone of the 1x1x1 structure
Top view near-EF band structure
T-dependent ARPES study from TROOM to 10 K
UPS with He I, Eh= 21.2 eV (close to A and L points)
• Se 4p VB at Γ (Cut // Γ − K )
Reciprocal space
Top view near-EF band structure
H A
Γ
L
K M
L
A
Γ
M
K
k
E
EF
k
Γ M
T-dependent ARPES study from TROOM to 10 K
UPS with He I, Eh= 21.2 eV (close to A and L points)
• Se 4p VB at Γ (Cut // Γ − K )
• Ti 3d CB at M (Cut // Γ − M (long axis))
Reciprocal space
ARPES on 1T-TiSe2
Brillouin zone of the 1x1x1 structure
Γ
M
K
Brillouin zone of the 1x1x1 structure
H A
Γ
L
K M
L
A k
E
EF
k
Γ M
-0.33 eV below EF
Normal phase (RT)
ARPES on 1T-TiSe2 Pristine at RT
Reduced Brillouin zone of the 2x2x2 structure
Top view near-EF band structure
Γ
Γ
M
K
k
E
EF
k
Γ
A L
M
CDW phase
ARPES on 1T-TiSe2
M
Top view near-EF band structure
Γ
Γ
M /Γ *
K
k
E
EF
k
Γ M /Γ *
A/Γ* L/Γ*
M/Γ*
ARPES on 1T-TiSe2
Reduced Brillouin zone of the 2x2x2 structure
CDW phase
Top view near-EF band structure
Γ
Γ
M /Γ *
K
k
E
EF
k
Γ M /Γ *
A/Γ* L/Γ*
M/Γ*
ARPES on 1T-TiSe2 Pristine at 10 K
CDW phase (10 K)
Reduced Brillouin zone of the 2x2x2 structure
Top view near-EF band structure
Γ
Γ
M /Γ *
K
k
E
EF
k
Γ M /Γ *
A/Γ* L/Γ*
M/Γ*
ARPES on 1T-TiSe2
Semiconductor or semimetal ?
Reduced Brillouin zone of the 2x2x2 structure
CDW phase (10 K)
Pristine at 10 K
Γ
M
K
Γ M
ARPES on 1T-TiSe2
Semiconductor at TROOM
Ti 3d CB above EF Se 4p VB slightly below EF
Pristine
Normal phase (RT) Normal phase (RT) CDW phase (10 K) CDW phase (10 K)
+10 meV
-84 meV
Γ
M
K
Γ M
ARPES on 1T-TiSe2
Semiconductor at TROOM
Ti 3d CB above EF Se 4p VB slightly below EF
Pristine
Normal phase (RT) Normal phase (RT) CDW phase (10 K) CDW phase (10 K)
+10 meV
-84 meV
Doped samples?
ARPES on 1T-TiSe2-xSx Γ
M
K
Γ M
Ti 3d CB below EF Se 4p VB below EF
Normal phase (RT) Normal phase (RT) CDW phase (10 K) CDW phase (10 K)
Semimetal at TROOM
x = 0.12
-18 meV
-67 meV
ARPES on 1T-TiSe2-xSx
Γ M
Γ
M
K
x = 0.34
Semiconductor at TROOM
Ti 3d CB slightly above EF Se 4p VB below EF
Normal phase (RT) Normal phase (RT) CDW phase (10 K) CDW phase (10 K)
+2 meV
-64 meV
ARPES on 1T-TiSe2-xSx
Γ M
Γ
M
K
x = 0.34
Semiconductor at TROOM
Ti 3d CB slightly above EF Se 4p VB below EF
Normal phase (RT) Normal phase (RT) CDW phase (10 K) CDW phase (10 K)
+2 meV
-64 meV
Evolution of the gap size with temperature?
k
EF
k
Γ M /Γ *
Γ
M
K ARPES on 1T-TiSe2-xSx T-dependence Pristine
= ( - )2
k
EF
k
Γ M /Γ *
Indirect band gap squared
Γ
M
K ARPES on 1T-TiSe2-xSx T-dependence Pristine
= ( - )2
k
EF
k
Γ M /Γ *
Γ
M
K ARPES on 1T-TiSe2-xSx T-dependence Pristine
Indirect band gap squared
= ( - )2
TCDW = 220 K ± 5 K
k
EF
k
Γ M /Γ *
P. Chen et al., Nat. Comm. 6, 8943 (2015)
Δ 2 T − Δ 2 TC ∝ tanh2 ATC
T− 1 )
Semi-empirical BCS-type gap equation
Γ
M
K ARPES on 1T-TiSe2-xSx
What about the Sulfur doped samples?
T-dependence Pristine
Indirect band gap squared
= ( - )2
k
EF
k
Γ M /Γ *
Γ
M
K ARPES on 1T-TiSe2-xSx T-dependence S-doped
x = 0.12 x = 0.34
Indirect band gap squared
= ( - )2
k
EF
k
Γ M /Γ *
Γ
M
K
TCDW = 185 K ± 5 K TCDW = 195 K ± 5 K
ARPES on 1T-TiSe2-xSx T-dependence S-doped
x = 0.12 x = 0.34
Indirect band gap squared
= ( - )2
k
EF
k
Γ M /Γ *
Γ
M
K
TCDW = 185 K ± 5 K TCDW = 195 K ± 5 K
ARPES on 1T-TiSe2-xSx
Consistent with temperature-dependent resistivity measurements?
T-dependence S-doped
x = 0.12 x = 0.34
Indirect band gap squared
Resistivity of 1T-TiSe2-xSx
dρ
/dT
(Ω*
cm/K
)
Transition temperatures from resistivity in agreement with ARPES
x =0.12 TCDW = 186 K x =0.34 TCDW = 193 K
ρ (
Ω*cm
)
dρ/dT
ρ(T)
Summary
ARPES
ρ (T)
STM/STS x = 0.12 x = 0.34
TCDW = 185 K ± 5 K TCDW = 195 K ± 5 K
E
EF
k
Γ
M E
EF
k
Γ
M
x = 0.12 x = 0.34
Normal phase
f(T)
Outlook
ARPES
ρ (T)
STM/STS x = 0.12 x = 0.34
TCDW = 185 K ± 5 K TCDW = 195 K ± 5 K
E
EF
k
Γ
M E
EF
k
Γ
M
x = 0.12 x = 0.34
Normal phase
• pristine TiSe2 semiconductor
• sulfur lowers TCDW nonlinearly
• slight reentrant behavior for low sulfur concentration
• TiSe2 under pressure becomes semimetallic
• TiS2 is a semiconductor with no CDW
Outlook
x = 0.12 x = 0.34
Normal phase
• pristine TiSe2 semiconductor
• sulfur lowers TCDW nonlinearly
• slight reentrant behavior for low sulfur concentration
• TiSe2 under pressure becomes semimetallic
• TiS2 is a semiconductor with no CDW
Competition between a positive chemical pressure effect and band reconstruction
Y. Miyahara et al., J. Phys.: Condens. Matter 8, 7453 (1996)