EUV GRATINGS Eulitha’s EUV gratings are fabricated on thin silicon nitride mambranes using high-resolution ebeam lithography. The gratings are typically etched into a Cr film deposited on the membrane. In order to boost the diffraction efficiency and to improve transmission the nitride membrane is sometimes also etched until a very thin support film remains (see diagram below). Gratings down to a period of 80nm are available. Applications for EUV gratings include spectroscopy and EUV interference lithography. EUV gratings are produces according to customers’ specifications. Please contact us with your requirements. EULITHA AG, 5232 Villigen PSI, Switzerland - www.eulitha.com - tel: 41 56 310 4279 - fax: 41 56 310 4153 - [email protected] EULITHA Silicon nitride membrane p t Cr t SiN h SiN L: Si frame width 5-10mm w: Silicon nitride membrane width 2-5mm g: Grating width <w-1mm p: Grating period >80nm t : Cr film thickness, 0-50nm (typical) Cr t : Silicon nitride membrane thickness 100-300nm SiN h : Remaining (support) silicon nitride thickness >30nm SiN Silicon Frame Silicon nitride membrane Cr film w L g 25.8.2015 2D EUV grating (array of holes) 1um-period EUV grating with support bars 100nm-period EUV grating
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EUV GRATINGS
Eulitha’s EUV gratings are fabricated on thin silicon nitride mambranes
using high-resolution ebeam lithography. The gratings are typically
etched into a Cr film deposited on the membrane. In order to boost
the diffraction efficiency and to improve transmission the nitride
membrane is sometimes also etched until a very thin support film remains
(see diagram below). Gratings down to a period of 80nm are available.
Applications for EUV gratings include spectroscopy and EUV interference
lithography.
EUV gratings are produces according to customers’ specifications.
Please contact us with your requirements.
EULITHA AG, 5232 Villigen PSI, Switzerland - www.eulitha.com - tel: 41 56 310 4279 - fax: 41 56 310 4153 - [email protected]
EULITHA
Silicon nitride membrane
p
tCr
tSiNhSiN
L: Si frame width 5-10mm
w: Silicon nitride membrane width 2-5mm
g: Grating width <w-1mm
p: Grating period >80nm
t : Cr film thickness, 0-50nm (typical)Cr
t : Silicon nitride membrane thickness 100-300nmSiN
h : Remaining (support) silicon nitride thickness >30nm SiN
Silicon Frame
Silicon nitride membrane
Cr filmw
L
g
25.8.2015
2D EUV grating (array of holes)
1um-period EUV grating with support bars 100nm-period EUV grating
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