erratico2.pdf

May 1999

RF POWER LDMOS TECHNOLOGY26 - 28 Vdd From HF up to 2 GHz

SD57045 45 W Device

MAIN TECHNOLOGICAL FEATURESSource Back ElectrodeLocos Field Oxide Th. 2.4 mmLch Ranging from 1.5 down to 0.4 mmSelf Alligned CoSi2/Poly Gate Fingers (Rs=2 W/square)Barrier/Al Alloy Metallization

p- Epi

Metal

CoSi2

P+ Sinker

p+ Sub.

p+ Body

Dielectric

Source Back Electrode

Drain Finger

n- Drain

n+ Source

Schematic and TEM Cross Sections

2 mmm

A complete Products Family is under development up to 2GHz

PEP conditions: @ F=945 and 945.1 MHz Idq=250 mA Vdd=28V* measured under CW conditions @ F=945MHz Idq=100 mA Vdd=28V)

Parameters SD57045STMicrelectronics

MRF183MOTOROLA

SD57060STMicrelectronics

MRF184MOTOROLA

Pout [W] 45 45 60* 60*Pgain [db] 15 11.5 14* 11.5*h [%] h [%] 40 33 60* 53*IMD3 [-dbc] 28 28 N.A. N.A.Coss [pF] @ Vds=28V Vgs=0 f=1MHz

40 38 47 44

Ciss [pF] @ Vds=28V Vgs=0 f=1MHz

73 82 84 83

Crss [pF] @ Vds=28V Vgs=0 f=1MHz

2 4.5 2.4 4.3

BVdssmin.[Volt] 65 65 65 65

LDMOS Electrical Comparison

1 10 100

Pout (W)

12

13

14

15

16

17

18

Pgain

(dB

)

Idq = 75 mA150 mA

250 mA 450 mA

Power Gain vs Output Power

10 20 30 40 50 60 70

Pout (W)

30

40

50

60

Eff

icie

ncy

(%

)

Idq = 250mA

Efficiency vs Output Power

1 10 100

Pout, PEP (W)

-50

-40

-30

-20

IMD

3 (

dB

)

Idq =75 mA150 mA

250 mA 450 mA

IMD3 vs Output Power

0 5 10 15 20 25 30

Drain-Source Voltage (V)

0

30

60

90

120

150

180

Capaci

tance

(pF) Crss Coss Ciss

Capacitance vs Drain-Source voltage

SD57045 TYPICAL DATA @ 945 MHz

SD57045 Test Fixture

NOKIA6110

part B: RF Side

part D: DSP/uP

front view

part C: Interf/Supply

part A: IF/Duplexback view

TX RF SAW filter

Power amplifier ( 2 stages )

Printed coupler

RF01APhilips

Front end

TCO986HToyocom

VTCXO 13 MHz

BFR93ASiemens

Discrete driver amplifier

B4570Siemens

IF SAW filter

BFR93ASiemens

VHF VCOdiscrete

DA-NLNTK

2nd IF dielectric filter

IL028FDK

UHF VCO

RX RF SAW filter

BAS70Siemens

Schottky diode

PLUSSAST

IF Part + synthesizer + PA conttrol

DFY2R902

Murata

Duplexer

Antenna Connector

SIM connector

SAVE battery contact

7 1 M H z9 3 5 - 9 6 0 M h z

AGC

1 3 M H z

PA

8 9 0 - 9 1 5 M h z

PA

cont rol

PLL 1 PLL 2

RF01A

PLU S S A

dr iver

/ 4

2 3 2 M H z1 0 0 6 - 1 0 3 1 M H z

1 1 6 M H z

/ 2

5 8 M H z

1 1 6 M H z

1 3 M H z

M ur a t a

D F Y 2 R 9 0 2

b r f 9 3 a

FDK

I L 0 2 8

b r f 9 3 a

Siemens

B 4 5 7 0

N T K

detection

I T X

Q T X

I RX

Q RX

0.9GHz Low Noise Amplifier

BiCMOS6M process with planar inductorsWide dynamic rangeLow Noise current-mode adaptive bias schemeDual linearity mode (Low/High IPi)

Simulated MeasuredPreliminary (*)

Supply Voltage 2.75V 2.75V

Current (Low /High IPi) 10 mA / 19 mA 11.9 mA / 21.8 mA

Power Gain (Low Ipi/High IPi)15 dB / 15.5 dB 11.5 dB/ 12dB

Noise Figure (Low IPi) 1.5 dB 2 dB Input Impedance 50 Ohm -Output Impedance 50 Ohm -1dBibCp (Low/ High IPi) -10dBm/ -4dBm -7 dBm / -1 dBm

(*) RF Socket TQFP48 effect to be deembedded

Performances:

LNA

High Gain ModeLow Gain Mode

MatchingNetwork

MatchingNetwork

50W 50W

ON board assy: LNA+MIXER in BCMOS 5

cooperazione UNI PAVIA/ST (Progetto MIRA)

Technology : HSB2 - 3ML Die Area 2.7 x 3.7 mmPackage : TQFP44

E-GSM/DCS DUAL BAND RADIO F.E.

Mono Chip Radio

Base Band Processor

RADIOTRANSCEIVER ANALOG

FRONTEND

Digital Base Band

RSSI

GSMK FILTER

RX DATA

TX DATA

LNA

PA

ARM 7,SAPPHISE,DSP ...

DECT Radio Chip Set

Saw Filter

RF Input

RF Output

Post DiscriminatorFilter

Loop Filter

RFDECT Application Board

STARMAN Satellite Radio Chip Set

IndoorAntenna Outdoor

Antenna

LNA

RF Front End

IIC

mmP

RN

RPM_CLK

AGC Channel Decoder

IICIIC

MPEGDecoder

IIC

SDA SCL

PLL

SCK

SDI

BIT_EN

DO_EN DOI DOSCLK

SDO

SCKT

LRCKT DAC

Q1 Q2

LOCK

IF SAWFilter

ExtTank

ExtTank

OCLK

STARMAN Radio Block Diagram

IFout 0.6~3.1MHz

GAINCONTROL

CRYSTALOSCILLATOR

fref1

fref2

: K2nd PLL:N

flo1

PHASE DETECTOR

PROG. DIVIDER

1st PLL

LNA

RF MIXER

IF1 BUFFERVGA

IF1 to IF2 MIXER

IF2 BUFFER

:M

RF 1452~1492MHz

flo2

CHARGE PUMP

VCOPHASE DETECTOR

CHARGE PUMP

0CH1SSpectrum10dB/REF0dBm-82.003dB

-99.75kHz

Mkr

CENTER962.5kHzSPAN200kHz

RBW#10HzVBW10HzATN10dBSWP24.57sec

Hld

RF= 1201 MHz, Span = 200 KHz, RBW = 10 HzPhase noise = - 90 dBc /Hz @ 100 KHz

STARMAN Satellite RadioMeasurement of the Phase Noise of the Oscillator

RF VCOs

RF LNA, mixer

I2CBUS int.

PRESCALER +MUX

Prog. Counter

IF VCO

VGA

STARMAN Satellite RadioChip Layout - HSB2 Technology

STARMAN Application Board

ST20-GP1GPS Microprocessor

STB5600GPS Radio FE

SRAM ROM

GPS SystemST chipset

LocalOscillator

M

filter

L1 @1575.42 MHz

1555 MHz

80 MHz

IF filter

LO BUFF

20MHz

IF AMP

D Q

CK

/ 5

BUFF

BUFF16 MHz

STB5600

Clock

GPS IFRF AMP

LNA

M

filter

ACTIVE ANTENNA

ST20GP6

12 channelGPS

HardwareDSP

ST20CPU

Low powercontroller

Real timeclock/calendar

Programmablememoryinterface

64KSRAM

128Kmask ROM

Interrupt controller

Serialcommunication2 UART (ASC)

Parallelinput/output

Diagnosticcontrol unit

Testaccess port

16

GPS RADIO/ IF/DIGITAL CHIP-SET

GPS Board

RF Section Digital Section

Large as a credit card (mm 90x50)

A Path Recorded in Cataniawith the GPS

Mean value of satellites tracked: 6

Percentage of 3D Fix : 70.4%

Percentage of 2D Fix : 28.2%

Percentage of NO Fix : 1.4%

Mean value of DOP : 2

Tunnel

Tunnel

Rapida crescita del mercato dei C.I. RF spinta dalla crescente domanda nel settore wireless Nuove applicazioni (multistandard, UMTS, DVS, ecc.) richiedono lo sviluppo di nuovi materiali, substrati, package e maggiori integrazioni di funzioniEvoluzione tecnologica per C.I. RF piu'lenta che per VLSI(prestazioni, effetti parassiti, aspetti CAD, verifica ...) Focalizzazione sull'integrazione di componenti passivi integrati di alta qualita' per ridurre consumi/costiLa complessita' del panorama applicativo (standard/sistemi) richiede una varieta' di conoscenze specifiche che ben si adattano alla esperienza ed agli interessi del mondo accademicoSoddisfacenti i risultati ottenuti ed in crescita l'attivita' di collaborazione tra i gruppi di ricerca universitari (PV, CT, MI, BO, PI, ecc.) ed STMicroelectronics

Conclusioni