MOS integrated circuits are based on insulated-gate field-effect transistors. MOS devices and associated integrated circuits are fabricated in silicon using similar processing techniques to those used for bipolar circuits, but, because of the much simpler structure of the MOSFET, fewer processing stages are required. There are four types of FETs: • transistors with n or p channel and • transistors, containing built channel, and transistors with induced channel. Electrons are majority carriers in a n channel. Their mobility is higher. For this reason properties of nMOSFETs are better. The structure and processing of a MOSFET with induces channel is less complicate. MOSFETs with induced channels are the main elements of MOS ICs. ELEKTRONIKOS ĮTAISAI 2009 VGTU EF ESK [email protected]1 Isolation of elements Elements of MOS ICs
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MOS integrated circuits are based on insulated-gate field-effect transistors.
MOS devices and associated integrated circuits are fabricated in silicon using
similar processing techniques to those used for bipolar circuits, but, because of
the much simpler structure of the MOSFET, fewer processing stages are
required.
There are four types of FETs:
• transistors with n or p channel and
• transistors, containing built channel, and transistors with induced
channel.
Electrons are majority carriers in a n channel. Their mobility is higher. For this
reason properties of nMOSFETs are better.
The structure and processing of a MOSFET with induces channel is less
complicate.
MOSFETs with induced channels are the main elements of MOS ICs.