1 Electrohydrodynamic emitters of ion beams V.G. Dudnikov Muons, Inc, 552 North Batavia Ave. Batavia IL 60510. ABSTRACT Physical processes that determine the generation of ion beams with a high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects, which are manifested in the features of ion emission, and the kinetics of ion interaction in high-density beams are discussed. The factors that determine the size of the emission zone, stability of emission at high and low currents, cluster generation, increase in energy dispersion, and decrease in beam brightness are analyzed. The problems of the practical maintenance of the stable functioning of the EHD emitters are considered. The practical applications of EHD emitters are considered. INTRODUCTION In literature on the microtechnology (mainly of technologies of microelectronics), published in recent Years [ 1 , 2 , 3 , 4 , 5 ],became mandatory the section devoted to elektrohydrodynamic (liquid metal) ion source and systems with fine focused ion beam for micromachining in their basis: submicron lithography implantography, microanalysis. While up to now the role of EHD source in the production of microproducts is not to high, it is considered as important method of elements of novel technologies. It is assumed that in the combination with a raster tunneling microscope EHD source can start founding members of first nascent nanotechnology [ 6 , 7 ]. Emission characteristics of EHD sources is so high, the dating of him so much impression all ho familiar with a typical characteristics of other ion sources. In the EHD source by very simple means ensured a generation of stable stationary ion beam generation with emission current density of hundreds million A / cm 2 . Like the result was not reached by development field electron emitters. At a typically emission ion current density at another sources less than ~1 A / cm 2 these results were absolutely fantastic. That to happen, during about a dozen years EHD sources development was not mentioned in publications in Russian. This activities is cultivated in foreign groups working field emission ion Muller projectors and in firms linked to manufacture technological equipment for microelectronics fabrication. Interest for this problem of the Soviet specialists of ion source was not manifested itself almost for about 1983. On All-union seminar of intense ion source and the beam in Kiev a question on a liquid metal sources in the first time was raised by I. M. Roife in May 1983. In his report was discussed results of foreign publications. Many party in workshop has shown big interest to these discussions. Little later in Journal “Physics Uspekchi” was published a review of M.D. Gabovich "Liquid- metal ion emitters" [ 8 ], witch contributed to familiarization of broad public to this problematic. In future in Kiev Seminars of intense ion sources and beams was discussed almost all soviet works on EHD emitters, published letter in periodic issues. Study of EHD emitters was started in many laboratories in the USSR, but really Interesting results was reached only little. The studies of lest years have changed existing representation on many features of functioning of EHD emitters. More well-established representations on EHD-emitters summation in the reviews [ 9 , 10 , 11 ]. Technologically applications of EHD emitters are devoted special reviews [3,4,5, 12 ]. A review of the works on EHD emitters performed in the Soviet Union until 1991 are presented in [ 13 ]. A review of ion sources for ion microlithography is presented in [ 14 ]. In present work
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1
Electrohydrodynamic emitters of ion beams
V.G. Dudnikov
Muons, Inc, 552 North Batavia Ave. Batavia IL 60510.
ABSTRACT
Physical processes that determine the generation of ion beams with a high emission current density in
electrohydrodynamic emitters are considered. Electrohydrodynamic effects, which are manifested in the
features of ion emission, and the kinetics of ion interaction in high-density beams are discussed. The factors
that determine the size of the emission zone, stability of emission at high and low currents, cluster
generation, increase in energy dispersion, and decrease in beam brightness are analyzed. The problems of
the practical maintenance of the stable functioning of the EHD emitters are considered. The practical
applications of EHD emitters are considered.
INTRODUCTION
In literature on the microtechnology (mainly of technologies of microelectronics), published in recent Years
[1,2,3,4,5],became mandatory the section devoted to elektrohydrodynamic (liquid metal) ion source and
systems with fine focused ion beam for micromachining in their basis: submicron lithography
implantography, microanalysis. While up to now the role of EHD source in the production of
microproducts is not to high, it is considered as important method of elements of novel technologies. It is
assumed that in the combination with a raster tunneling microscope EHD source can start founding
members of first nascent nanotechnology [6,7]. Emission characteristics of EHD sources is so high, the
dating of him so much impression all ho familiar with a typical characteristics of other ion sources. In the
EHD source by very simple means ensured a generation of stable stationary ion beam generation with
emission current density of hundreds million A / cm2 . Like the result was not reached by development
field electron emitters. At a typically emission ion current density at another sources less than ~1 A / cm2
these results were absolutely fantastic. That to happen, during about a dozen years EHD sources
development was not mentioned in publications in Russian. This activities is cultivated in foreign groups
working field emission ion Muller projectors and in firms linked to manufacture technological equipment
for microelectronics fabrication. Interest for this problem of the Soviet specialists of ion source was not
manifested itself almost for about 1983. On All-union seminar of intense ion source and the beam in Kiev
a question on a liquid metal sources in the first time was raised by I. M. Roife in May 1983. In his report
was discussed results of foreign publications. Many party in workshop has shown big interest to these
discussions. Little later in Journal “Physics Uspekchi” was published a review of M.D. Gabovich "Liquid-
metal ion emitters" [8], witch contributed to familiarization of broad public to this problematic. In future in
Kiev Seminars of intense ion sources and beams was discussed almost all soviet works on EHD emitters,
published letter in periodic issues. Study of EHD emitters was started in many laboratories in the USSR,
but really Interesting results was reached only little. The studies of lest years have changed existing
representation on many features of functioning of EHD emitters. More well-established representations on
EHD-emitters summation in the reviews [9,10,11]. Technologically applications of EHD emitters are devoted
special reviews [3,4,5,12]. A review of the works on EHD emitters performed in the Soviet Union until 1991
are presented in [13]. A review of ion sources for ion microlithography is presented in [14]. In present work
2
main attention is concentrated on the features of physical processes in EHD emitters, that was revealed in
recent time and was weak reflected in literature. Researched process have an angstrom sizes and a
superstronge electric fields, thu on should eliminate direct observation. We needs use indirect method
registration and far extrapolation thu increase role physical model and the requirements to validity.
Naturally, the proposed materials should not be regarded as completing the development of this area. There
are still many unresolved issues and wide scope for activity both in researching physical processes and in
perfecting new unique legs of equipment based on EHD emitters.
PHYSICAL FEATURES OF FUNCTIONIN EHD EMITTERS
The generation of ion beams in EHD emitters is largely determined by the behavior of the melt film on the
electrodes in a strong electric field, i.e. electrohydrodynamics of such systems. With an increase in the
electric field strength, field emission arises on the negative electrode, and with a positive polarity in a field
with E> 108 V / cm, it is possible to tear out positive ions and intense field evaporation of the substance
begins. This process was discovered by Müller in 1941 [15].
Fig. 1. Schematic representation of a working EHD emitter.
1-needle, 2-film of melt, 3-emitting sharpening, 4-region of luminescence, 5-extractor.
For a long time, EHD emitters were developed by space technology centers as small thrust engines for
spacecraft. We used emitters in the form of a capillary, from the open end of which the molten material was
atomized by an electric field in the form of charged microdrops - clusters [16]. A similar process has long
been used for spraying paints. In 1969 (F. Machoney et al. "Electrohydrodynamic Ion Sources" [17])
confirmation of the emission of atomic ions from capillaries with a small outlet aperture d ~ 0.04 mm was
obtained. In this paper, arguments are presented in favor of ion generation due to field evaporation and a
rather extensive bibliography on EHD emitters is used. True, a very modest estimate of j ~ 30 A / cm2 is
3
given for the emission current density, and the assumption that the current density may be j> 104 A / cm2
seemed too bold to the authors. It should be noted that the fabrication of thin metal capillaries is rather
difficult. However, even with a small capillary diameter, the emitting tip of the liquid can move along the
surface of the protruding drop, which leads to an increase in the effective size of the emitter and the
instability of the emission.
The design of the EHD source, studied by R. Clampitt and D.K Jefferies., turned out to be successful. [18],
in which the emission region is located on the tip of the needle extended through the open end of the
capillary. The melt flows to the emission zone along the lateral surface of the needle. A schematic
representation of the working EHD emitter is presented in Fig. 1. After that, various designs of EHD sources
were developed, including very simple and very complex ones. Some examples are shown in Fig. 2 of [19].
A source with a needle made of porous tungsten impregnated with a working substance [20],
gap sources, in which emitting peaks are located along a slit 1 μm wide and 8 cm long [21, 19], and sources
in which the needle tip is located at a distance of ~ 10 μm from the target [7]. The latter, in terms of their
design and control principle, are very similar to a scanning tunneling microscope and can be used to process
a target, which at the same time is the source’s extracting electrode. Most often EHD-emitters consists
a b c
4
d
Fig. 2. Examples of constructions of EHD emitters. a, b — emitters with a bow; c — container emitter; d—
Figure 34 shows the dependence of the emission current on the voltage at the needle for an ion source based
on low-temperature ionic liquids.
Fig. 34. Dependence of the emission current on the voltage at the needle for an ion source based on low-
temperature ionic liquids.
FORMATION OF ION BEAMS WITH INCREASED INTENSITY
36
And finally, another possible application of EHD emitters is the formation of wide ion beams with increased
intensity for accelerators and a number of other applications [53,131,132].
The system for generating intense beams for accelerators is shown in Fig. 35.
a b
Fig. 35. System for the formation of intense ion beams for accelerators. a-ion beam with an energy of 7
keV, b-ion beam with an energy of 56 keV [53].
It consists of a pulling electrode and a single lens focusing a diverging beam. The distribution of current
density in the ion beam after the lens is shown in Fig. 36. This source
Fig. 36. The distribution of current density in the ion beam after the lens at various voltages U2 on the
middle electrode of the lens. a-- U2 = 47 kV, b-U2 = 49 kV, c-U2 = 50 kV [53].
37
was installed on an ELV electrostatic accelerator and beams of gallium and indium ions with a current of
up to 0.1 mA were obtained at an energy of 1.1 MeV.
CONCLUSION
The development of EHD emitters has become a fundamentally new method for producing ion beams with
high brightness along with the development of three other fundamentally new methods for producing ions:
the surface-plasma method for producing beams of negative ions [133,134,135], ECR sources of multiply
charged ions [136], and electron-beam sources of multiply charged ions [137] .
Recent studies have clarified many previously obscure points in the functioning of electrohydrodynamic
ion emitters. However, the available data is still fragmented and not linked into a complete consistent
description. In particular, the reasons for the occurrence of specific emission oscillations with increasing
ion current remain unclear. There are doubts about the stationarity of low emission currents. Some
uncertainty remains in the identification of the main mechanisms of ion generation at high currents.
During the same years, significant progress has been achieved in improving the facilities for
microprocessing by focused ion beams of EHD emitters. Interesting results were obtained in their
technological applications. There were reports of successful commercial samples of installations with EHD
emitters. It should be noted that the possibilities for increasing the parameters of focused beams of EHD
emitters remain very significant. It can be hoped that physical studies of EHD emitters and the development
of their effective applications in technologies will lead to new interesting results.
Despite tremendous advances in the technology of producing focused ion beams, modifications of vacuum
systems of electron and ion microscopes to work in low vacuum, and automation of high-precision sample
manipulators, systems with focused ion beams could not replace the photolithography process in the
production of microcircuits. However, they have become an indispensable tool in the manufacture of masks
for photolithography, correcting contacts on defective chips, as well as in the processes of debugging the
production of experimental microcircuits.
I thank A. Shabalin and D. V. Kovalevsky for fruitful cooperation in the development of EHD emitters and
systems based on them.
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