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Effects of High Power Microwaves and Chaos in 21 st Century Electronics*: Highlights of Research Accomplishments Presented to Col. Schwarze Directed Energy Task Force January 17, 2007, The Pentagon MURI 01 www.ireap.umd.edu/MURI- 2001
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Effects of High Power Microwaves and Chaos in 21 st Century Electronics*:

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Page 1: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

1

Effects of High Power Microwaves and Chaos in 21st Century Electronics*: Highlights of Research Accomplishments

Presented to Col. SchwarzeDirected Energy Task Force

January 17, 2007, The Pentagon

*Administered by: AFOSR (G. Witt, R. Umstattd, R. Barker) & AFRL (M. Harrison and J. Gaudet)

MURI 01 www.ireap.umd.edu/MURI-2001

Page 2: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

2

Four Interrelated Parts of the StudyCoordinating principal investigator, V. Granatstein

• A Statistical prediction of microwave coupling to electronics inside enclosures

( T. Antonsen, E. Ott, S. Anlage)

• B Nonlinear effects and chaos in electronic circuits

(S. Anlage, T. Antonsen, E. Ott, J. Rodgers)

• C Electronics vulnerabilities (upset and damage)

(J. Rodgers, N. Goldsman, A. Iliadis, & Boise State Univ.)

• D Microwave detection and mitigation

(B. Jacob, J. Melngailis, O. Ramahi)

MURI 01

Page 3: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

3

Understanding HPM Effects from the Perspective

of Nonlinear Dynamics and Chaos

Steven M. Anlage, Vassili Demergis, Renato Moraes, Edward Ott, Thomas Antonsen

Research funded by the AFOSR-MURI and DURIP programs

Thanks to Alexander Glasser, Marshal Miller, John Rodgers, Todd Firestone

Page 4: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

4

HPM Effects on Electronics

What role does Nonlinearityand Chaos play in producing

HPM effects?

Page 5: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

5

OVERVIEW

HPM Effects on ElectronicsAre there systematic and reproducible effects?Can we predict effects with confidence?

Evidence of HPM Effects is mainly empirical: Anecdotal stories of rf weapons and their effectivenessCollected data on HPM testing is statistical in nature

Difficulty in predicting effects given complicated coupling,interior geometries, varying damage levels, etc.

Why confuse things further by adding nonlinearity and chaos?A systematic framework in which to conceptualize, quantify and

classify HPM effects

Provides a quantitative foundation for developing the science of HPM effects

New opportunities for circuit upset/failure

Page 6: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

6

VD

I(VD)

VD

C(VD)

Battery

Cor Hunt

NLCR

VD

I(VD)

VD

C(VD)

Battery

Cor Hunt

NLCR

The p/n Junction

The p/n junction is a ubiquitous feature in electronics:Electrostatic-discharge (ESD) protection diodesTransistors

Renato Mariz de Moraes and Steven M. Anlage, "Unified Model, and Novel Reverse Recovery Nonlinearities, of the Driven Diode Resonator," Phys. Rev. E 68, 026201 (2003).

Renato Mariz de Moraes and Steven M. Anlage, "Effects of RF Stimulus and Negative Feedback on Nonlinear Circuits," IEEE Trans. Circuits Systems I: Regular Papers, 51, 748 (2004).

Nonlinearities:Voltage-dependent CapacitanceConductance (Current-Voltage characteristic)Reverse Recovery (delayed feedback)

RR is a nonlinear function of bias, duty cycle, frequency, etc.

HPM input can induce Chaos through several mechanisms

Page 7: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

7

In general …To understand the p/n junction embedded in more complicated circuits:

Nonlinear capacitanceRectificationNonlinearities of RR

All play a role!

RLD-TIATrans-ImpedanceAmplifier

2-tone injection experiments: frequency0

~ MHz~ GHz

LFHF

(similar to Vavriv)

p/n Junctions in Real Circuits

Max

. of

Op-

amp

AC

V

olta

ge O

utpu

t

No

Inci

dent

Po

wer

PH

F=+

20dB

mP

HF=

+40

dBm

PH

F=+

30dB

m

Max

. of

Op-

amp

AC

V

olta

ge O

utpu

t

No

Inci

dent

Po

wer

PH

F=+

20dB

mP

HF=

+40

dBm

PH

F=+

30dB

m

Low Frequency Driving Voltage VLF (V)

LF = 5.5 MHz+ HF = 800 MHz

Period 1

incr

easi

ng P

HF

VLF + VHF

VDC

Page 8: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

8

Electrostatic Discharge (ESD) Protection CircuitsA Generic Opportunity to Induce Instability at High Frequencies

Circuit tobe protected

ESD Protection

Delay T

Schematic ofmodern integratedcircuit interconnect

The “Achilles Heel” of modern electronics

Page 9: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

9

Rg

Vref

VincVg(t)

+V(t) -

Transmission Line

Chaos in the Driven Diode Distributed Circuit

Z0

delay T

A simple model of p/n junctions in computersDelayed

FeedbackTime-Scale!

mismatch

Delay differential equations for the diode voltage

))(cos())((

)2())2((

))(()2(

))((

)1()(

))((

)1()(

00

0

0

0 TttVCZ

VTtV

dt

d

TtVC

tVCTtV

tVCZ

gZtV

tVCZ

gZtV

dt

d gggg

Solve numericallyMeasure experimentally

Page 10: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

10

Vg = .5 V Period 1

Vg = 2.25 V Period 2

Vg = 3.5 V Period 4

Vg = 5.25 V Chaos

V(t

) (V

olts

)V

(t)

(Vol

ts)

V(t

) (V

olts

)V

(t)

(Vol

ts)

Time (s)

Time (s)

Time (s)

Time (s)

Chaos in the Driven Diode Distributed Circuit

Simulation results

f = 700 MHzT = 87.5 psRg = 1 Z0 = 70 PLC, Cr = Cf/1000

Page 11: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

11

Experimental Bifurcation DiagramBAT41 Diode @ 85 MHz

T ~ 3.9 ns, Bent-Pipe

0 20 40 60 80 100Frequency MHz

-80

-60

-40

-20

0

rewoPmBd

17. dBm

0 20 40 60 80 100Frequency MHz

-80

-60

-40

-20

0

rewoPmBd

19. dBm

0 20 40 60 80 100Frequency MHz

-80

-60

-40

-20

0

rewoPmBd

20.5 dBm

0 20 40 60 80 100Frequency MHz

-80

-60

-40

-20

0

rewoPmBd

21.6 dBm

0 20 40 60 80 100Frequency MHz

-80

-60

-40

-20

0

rewoPmBd

21.85 dBm

0 20 40 60 80 100Frequency MHz

-80

-60

-40

-20

0

rewoPmBd

22.2 dBm

Driving Power (dBm)

Page 12: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

12

Conclusions and Further Research

Nonlinearity and chaos have emerged as organizing principlesfor understanding HPM effects in circuitsWhat can you count on? → p/n junction nonlinearity

Lumped → NL resonance Distributed → delayed feedbackESD protection circuits are ubiquitous and vulnerable

Effects of chaotic driving signals on nonlinear circuits (challenge – circuits are inside systems with a frequency-dependent transfer function)

Unify our circuit chaos and wave chaos research

Uncover the “magic bullet” driving waveform that causes maximum disruption to electronics

Theory: A. Hübler, PRE (1995); S. M. Booker (2000)Aperiodic time-reversed optimal forcing function

Page 13: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

13

Conclusions

The p/n junction offers many opportunities for HPM upset effectsInstability in ESD protection circuits (John Rodgers)Distributed trans. line / diode circuit → GHz-scale chaos

GHz chaos paper: http://arxiv.org/abs/nlin.cd/0605037

Page 14: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

14

Diode rr (ns) Cj0 (pf) Experiment Delay Time T (ns) ResultMin. Pow. to

PD~ƒ Range for

Result

1N4148 4® 0.7Part. Reflecting 8.6, 17.3 PD ~20 dBm

0.4–1.0 GHz periodically

Bent-Pipe 3.0, 3.5, 3.9, 4.1, 4.4, 5.5, 7.0 PD, Chaos* ~14 dBm 0.2–1.2 GHz

BAT86 4® 11.5Part. Reflecting 8.6, 17.3 PD ~ 35 dBm

0.4–1.0 GHz periodically

Bent-Pipe 3.0, 3.5, 3.9, 4.1, 4.4, 5.5, 7.0 Per 1 only --- 20-800 MHz

BAT41 5® 4.6

Part. Reflecting 8.6, 17.3 Per 1 only --- 0.4-1.0 GHz

Bent-Pipe3.9 PD, Chaos

~ 25 dBm 43 MHz

~ 17 dBm 85 MHz

3.0, 3.5, 4.1, 4.4, 5.5, 7.0 Per 1 only --- 20-800 MHz

NTE519 4® 1.1Part. Reflecting 8.6, 17.3 PD ~25 dBm

0.4–1.0 GHz periodically

Bent-Pipe 3.0, 3.5, 3.9, 4.1, 4.4, 5.5, 7.0 PD, Chaos* ~16 dBm 0.5-1.2 GHz

NTE588 35 116Part. Reflecting 8.6, 17.3

Per 1 only --- 0.02 - 1.2 GHzBent-Pipe 3.0, 3.5, 3.9, 4.1, 4.4, 5.5, 7.0

MV209 30 66.6Part. Reflecting 8.6, 17.3

Per 1 only --- 0.02 - 1.2 GHzBent-Pipe 3.0, 3.5, 3.9, 4.1, 4.4, 5.5, 7.0

5082-2835 <15 0.7Part. Reflecting 8.6, 17.3

Per 1 only --- 0.02 - 1.2 GHzBent-Pipe 3.0, 3.5, 3.9, 4.1, 4.4, 5.5, 7.0

5082-3081 100 2.0Part. Reflecting 8.6, 17.3

Per 1 only --- 0.02 - 1.2 GHzBent-Pipe 3.0, 3.5, 3.9, 4.1, 4.4, 5.5, 7.0

*With dc bias.Highest Frequency Chaos @ 1.1 GHz

Page 15: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

15

Overview/Motivation“The Promise of Chaos”

• Can Chaotic oscillations be induced in electronic circuits through cleverly-selected HPM input?

• Can susceptibility to Chaos lead to degradation of system performance?

• Can Chaos lead to failure of components or circuits at extremely low HPM power levels?

• Is Chaotic instability a generic property of modern circuitry, or is it very specific to certain types of circuits and stimuli?

These questions are difficult to answer conclusively…

Page 16: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

16

Chaos in Nonlinear Circuits

Many nonlinear circuits show chaos:Driven Resistor-Inductor-Diode series circuitChua’s circuitCoupled nonlinear oscillatorsCircuits with saturable inductorsChaotic relaxation circuitsNewcomb circuitRössler circuitPhase-locked loops…Synchronized chaotic oscillators and chaotic communication

Here we concentrate on the most common nonlinear circuit elementthat can give rise to chaos due to external stimulus: the p/n junction

Page 17: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

17

Vg (Volts)

Str

ob

e P

oin

ts

(Volt

s) Period 2

Period 1

Period 4

Chaos

Chaos in the Driven Diode Distributed Circuit

f = 700 MHzT = 87.5 psRg = 1 Z0 = 70 PLC, Cr = Cf/1000

Simulation results

http://arxiv.org/abs/nlin.cd/0605037

Page 18: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

18

Experiment on the Driven Diode Distributed Circuit

1 23

Signal Generator

Amplifier

CirculatorDirectional

Coupler

50ΩLoad Oscilloscope Spectrum Analyzer

TransmissionLine (Z0)

Diode

L

Diode Reverse Recovery Time (ns)

BAT 86 4

1N4148 4

1N5475B 160

1N5400 7000

Page 19: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

19

Chaos and Circuit DisruptionWhat can you count on?

Bottom Line on HPM-Induced circuit chaosWhat can you count on? → p/n junction nonlinearityTime scales!

Windows of opportunity – chaos is common but not present for all driving scenarios

ESD protection circuits are ubiquitous

Manipulation with “nudging” and “optimized” waveforms.Quasiperiodic driving lowers threshold for chaotic onset

D. M. Vavriv, Electronics Lett. 30, 462 (1994).Two-tone driving lowers threshold for chaotic onset

D. M. Vavriv, IEEE Circuits and Systems I 41, 669 (1994).

D. M. Vavriv, IEEE Circuits and Systems I 45, 1255 (1998). J. Nitsch, Adv. Radio Sci. 2, 51 (2004).

Noise-induced Chaos:Y.-C. Lai, Phys. Rev. Lett. 90, 164101 (2003).

Resonant perturbation waveformY.-C. Lai, Phys. Rev. Lett. 94, 214101 (2005).

Page 20: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

20

0 200 400 600 800 1000 1200Frequency MHz

-25

-20

-15

-10

-5

0

rewoPmBd

21. dBm

0 200 400 600 800 1000 1200Frequency MHz

-25

-20

-15

-10

-5

0

rewoPmBd

19. dBm0 200 400 600 800 1000 1200

Frequency MHz-25

-20

-15

-10

-5

0

rewoPmBd

17. dBm

NTE519785 MHzT ~ 3.5 nsDC Bias=6.5 Volts

Distributed Transmission Line Diode Chaos at 785 MHz

17 dBm input

21 dBm input

19 dBm input

http://arxiv.org/abs/nlin.cd/0605037

Power Combiner

Source

Circulator

Oscilloscope

T-Line

1 23

1 23

50Ω Load

Length - 2

Length - 1

OptionalDC Source

& Bias TeeMatched to 50Ω

Directional Coupler

Spectrum Analyzer

Diode

Circulator Power Combiner

SourceSource

Circulator

Oscilloscope

T-Line

1 23

1 23

50Ω Load50Ω Load

Length - 2

Length - 1

OptionalDC Source

& Bias TeeMatched to 50Ω

Directional Coupler

Spectrum Analyzer

Diode

Circulator

Page 21: Effects of High Power Microwaves and           Chaos in 21 st  Century Electronics*:

21

ChaosClassical: Extreme sensitivity to initial conditions

Manifestations of classical chaos:Chaotic oscillations, difficulty in making long-term predictions, sensitivity to noise, etc.

10 15 20 25 30

0.2

0.4

0.6

0.8

1

x

Iteration Number

101.00 x

100.00 x

The Logistic Map:

)1(41 nnn xxx 0.1

DoublePendulum later