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© Applied Materials, Inc. All Rights Reserved
Effects of Bath contamination on
electroplated solder bumps
Sam Lee and Marvin Bernt, Kalispell, MT, USA
Packaging, Plating and Cleans (PPC)
Applied Materials, Inc.
Prayudi Lianto, Science Park II, Singapore
Asia Product Development Center (APDC)
Applied Materials, Inc.
January 26, 2016
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Outline
Introduction
Experiment
Results
Cu contaminated Ni bath
Ni contaminated SnAg bath
Cu contaminated SnAg bath
Summary/Conclusions
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Chip manufacturing
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Silicon Die
Substrate
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Wafer Level Packaging
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Silicon Wafer
Photoresist coating Ni Plating
SnAg Plating Photoresist Strip UBM Etch
Flux / Reflow
Photoresist (PR)
Under Bump
Metallurgy (UBM)
Silicon Die
Substrate
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Multi-metal Plating
Common to plate multiple metals on same equipment.
Minimize oxidation between metal depositions
Increase production flexibility
Reduce risks due to equipment down-time
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Cu Ni Sn
Ag
PR Strip UBM etch
Flux/Reflow
Plating
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Contamination Risks
Drag out risks:
From Cu bath into Ni bath
From Ni bath into SnAg bath
From Cu bath into SnAg bath
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Cu Ni Sn
Ag
PR Strip UBM etch
Flux/Reflow
Plating
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Outline
Introduction
Experiment
Results
Cu contaminated Ni bath
Ni contaminated SnAg bath
Cu contaminated SnAg bath
Summary/Conclusions
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Experiment Details
Baths were contaminated with metal constituents, not full
baths with additives avoid complications with
proprietary additives.
Contamination levels: 0, 10, 100, 500 ppm.
Test vehicles: patterned wafers 75 mm via with 50 mm
resist, and blanket Au seed wafers.
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Cu in Ni bath Ni in SnAg bath Cu in SnAg bath 1 2 3
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Criteria
Bath stability
In-film contaminant incorporation
Morphology
Bump height non-uniformity, coplanarity, defects
Intermetallic compounds (IMC) formation
Shear strength
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Outline
Introduction
Experiment
Results
Cu contaminated Ni bath
Ni contaminated SnAg bath
Cu contaminated SnAg bath
Summary/Conclusions
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Cu contamination in Ni bath
SIMS showed Cu incorporation corresponding to
contamination level.
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Cu dropping out of Ni bath
Auto-plate onto Ni pellets
Cu oxide formation (may affect pump
performance)
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Pump
Filt
er
Ni Bath
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Restore Ni morphology
At 500 ppm, Cu contamination level dropped to pre-
contamination level given enough recirc time.
Film morphology was restored as a result.
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Effect on Ni/SnAg bump heights
Cu contaminated Ni bath affected the plated Ni morphology.
Bad Ni morphology = Bad SnAg morphology
= Bump height defect (height/shape violation)
Higher Cu contamination more defects higher non-
uniformity © Applied Materials, Inc. All Rights Reserved
0 ppm Cu
500 ppm Cu
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Post reflow analysis
After UBM etch and reflow, bumps appeared normal.
FIB/SEM showed IMC further into solder for 500 ppm.
Shear strength decreased and varied more for 500 ppm. © Applied Materials, Inc. All Rights Reserved
0 ppm
500 ppm
IMC
IMC
Cu contamination (ppm)
Ni
SnAg
Ni
SnAg
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Summary: Cu contaminated Ni bath
Cu contamination at 100 ppm affected Ni/SnAg bumps:
Caused dendritic Ni morphology. This in turn affected SnAg
morphology, bump height non-uniformity, coplanarity, defects.
Increased IMC formation further into SnAg
Reduced shear strength
Cu contaminant was reduced over time by:
Auto-plating onto Ni pellets, forming oxide sludge
Restored Ni morphology.
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Outline
Introduction
Experiment
Results
Cu contaminated Ni bath
Ni contaminated SnAg bath
Cu contaminated SnAg bath
Summary/Conclusions
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2
3
4
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Ni contamination in SnAg bath
Ni contaminant stayed in the bath, even at 500 ppm.
Note that this was a SnAg system with inert anodes.
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Pump
Filt
er
SnAg
Bath
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SIMS showed no Ni incorporation at all contamination
levels, even at 500 ppm.
Reason was that Ni has a more negative standard
electrode potential and was in much lower concentration
Effect of Ni on thin SnAg film
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Electrode Reactions Eo [V]
Ag+ + e- Ag(s) +0.80
Sn2+ + 2e- Sn(s) -0.13
Ni2+ + 2e- Ni(s) -0.25
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Ni effect on Ni/SnAg bump heights
Ni contamination did not affect Ni/SnAg morphology
No effect on bump height non-uniformity, coplanarity
and defect.
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0 ppm Cu
500 ppm Cu
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Post reflow analysis
After UBM etch and reflow, bumps appeared normal.
FIB/SEM also showed no difference.
Shear strength varied but no trend seen. © Applied Materials, Inc. All Rights Reserved
0 ppm
500 ppm
Ni contamination (ppm)
Ni
SnAg
Ni
SnAg
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Summary: Ni contaminated SnAg bath
Ni was not incorporated into SnAg films at all levels
No apparent effect on SnAg morphology, bump height
non-uniformity, coplanarity, IMC formation and shear
strength
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Ni contamination, up to 500 ppm, does not affect
Ni/SnAg bumps at all
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Outline
Introduction
Experiment
Results
Cu contaminated Ni bath
Ni contaminated SnAg bath
Cu contaminated SnAg bath
Summary/Conclusions
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4
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Cu contamination in SnAg bath
Cu contaminant stayed in the bath, even at 500 ppm.
Note that this was a SnAg system with inert anodes.
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Pump
Filt
er
SnAg
Bath
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Effect of Cu on thin SnAg film
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SIMS showed Cu being incorporated at 100 ppm.
No Cu incorporated at 10 ppm.
Electrode Reactions Eo [V]
Ag+ + e- Ag(s) +0.80
Cu2+ + 2e- Cu(s) +0.34
Sn2+ + 2e- Sn(s) -0.13
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Effect on Cu/SnAg bump heights
No effect on bump height defect, non-uniformity and
coplanarity.
Cu contamination caused a rougher SnAg surface
(small pits).
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0 ppm Cu
500 ppm Cu
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Post reflow analysis on Cu/SnAg
After UBM etch and reflow, bumps appeared normal.
FIB/SEM also showed no difference.
Shear strength at 100 ppm was distinctly higher. © Applied Materials, Inc. All Rights Reserved
0 ppm
500 ppm
Cu contamination (ppm)
Cu
SnAg
Cu
SnAg
Cu6Sn5
Cu3Sn
Cu3Sn
Cu6Sn5
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Summary: Cu contaminated SnAg bath
Cu was incorporated into SnAg films at 100 ppm.
Cu affected bump surface roughness at 500 ppm.
No apparent effect on SnAg morphology, bump height
non-uniformity, coplanarity, IMC formation.
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Outline
Introduction
Experiment
Results
Cu contaminated Ni bath
Ni contaminated SnAg bath
Cu contaminated SnAg bath
Summary/Conclusions
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1
2
3
4
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Conclusions: Cu contamination in Ni bath affected Ni and therefore
SnAg morphology for Ni/SnAg bumping:
Almost all criteria of the SnAg layer were affected. Higher
contamination led to worse result.
Ni bath recovered over time because of Ni “dropping” out of bath.
Ni contamination in SnAg bath for Ni/SnAg bumping had
no effect on SnAg at up to 500 ppm contamination.
Cu contamination in SnAg bath for Cu/SnAg bumping had
no effect on SnAg at contamination level <100 ppm for
Cu/SnAg bumping. Little effect when level 100 ppm.
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Bibliography
1. H. Geng. Semiconductor Manufacturing Handbook, McGraw Hill, 2005, pp. 21.18.
2. M. Schlesinger, M. Paunovic. Modern Electroplating, 5th ed, John Wiley & Sons,
Inc., 2010, pp.167.
3. B. Kim, T. Ritzdorf. Electrodeposition of Near-eutectic SnAg Solders for Wafer
Level Packaging, Journal of Electrochemical Society, 150 (9), 2003, C577-C584.
4. C. Tautscher. Contamination Effects of Electronic Products, Marcel Dekker, Inc.
1991, pp. 43.
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