EE105 Fall 2011 Lecture 6, Slide 1 Prof. Salahuddin, UC Berkele Lecture 6 OUTLINE PN Junction Diodes – Reverse Breakdown – Large and Small signal models Reading: Chapter 2.2-2.3,3.2- 3.4 Bipolar Junction Transistors: Chapter 4
EE105 Fall 2011 Lecture 6, Slide 1 Prof. Salahuddin, UC Berkeley
Lecture 6
OUTLINEPN Junction Diodes– Reverse Breakdown– Large and Small signal modelsReading: Chapter 2.2-2.3,3.2-3.4
Bipolar Junction Transistors: Chapter 4
EE105 Fall 2011 Lecture 6, Slide 2 Prof. Salahuddin, UC Berkeley
Depletion Width at Equilibrium xa
qNE
si
A V(x)
xa-b
V0
0
bxqN
Esi
D
--(1)
--(2)
DA bNaN --(3)
V(a)=0 V(-b)=V0; Built in potential
EE105 Fall 2011 Lecture 6, Slide 3 Prof. Salahuddin, UC Berkeley
Reverse Breakdown Mechanismsa) Zener breakdown occurs when the electric field is
sufficiently high to pull an electron out of a covalent bond (to generate an electron-hole pair).
b) Avalanche breakdown occurs when electrons and holes gain sufficient kinetic energy (due to acceleration by the E-field) in-between scattering events to cause electron-hole pair generation upon colliding with the lattice.
EE105 Fall 2011 Lecture 6, Slide 4 Prof. Salahuddin, UC Berkeley
Reverse Breakdown• As the reverse bias voltage increases, the electric
field in the depletion region increases. Eventually, it can become large enough to cause the junction to break down so that a large reverse current flows:
breakdown voltage
EE105 Fall 2011 Lecture 6, Slide 5 Prof. Salahuddin, UC Berkeley
Parallel PN Junctions• Since the current flowing across a PN junction is
proportional to its cross-sectional area, two identical PN junctions connected in parallel act effectively as a single PN junction with twice the cross-sectional area, hence twice the current.
EE105 Fall 2011 Lecture 6, Slide 6 Prof. Salahuddin, UC Berkeley
Small and Large Signal Models- Basic Concept
EE105 Fall 2011 Lecture 6, Slide 7 Prof. Salahuddin, UC Berkeley
Example: Diode DC Bias Calculations
S
XTXDXX I
IVRIVRIV ln11
mA 2.0XI
Vx=1 V
EE105 Fall 2011 Lecture 6, Slide 8 Prof. Salahuddin, UC Berkeley
Constant-Voltage Diode Modelfor Large-Signal Analysis
• If VD < VD,on: The diode operates as an open circuit.
• If VD VD,on: The diode operates as a constant voltage source with value VD,on.
EE105 Fall 2011 Lecture 6, Slide 9 Prof. Salahuddin, UC Berkeley
Example: Diode DC Bias CalculationsVx=1 V
Say, VD =V0
ND=1017
NA=1016
EE105 Fall 2011 Lecture 6, Slide 10 Prof. Salahuddin, UC Berkeley
Large signal model: key points
• This example shows the simplicity provided by a constant-voltage model over an exponential model.
• Using an exponential model, iteration is needed to solve for current. Using a constant-voltage model, only linear equations need to be solved.
EE105 Fall 2011 Lecture 6, Slide 11 Prof. Salahuddin, UC Berkeley
Small-Signal Analysis• Small-signal analysis is performed at a DC bias point by
perturbing the voltage by a small amount and observing the resulting linear current perturbation. – If two points on the I-V curve are very close, the curve in-
between these points is well approximated by a straight line:
1DD VVD
D
D
D
dV
dI
V
I
T
DVV
T
s
V
Ie
V
ITD 1/1
EE105 Fall 2011 Lecture 6, Slide 12 Prof. Salahuddin, UC Berkeley
Diode Model for Small-Signal Analysis• Since there is a linear relationship between the
small-signal current and small-signal voltage of a diode, the diode can be viewed as a linear resistor when only small changes in voltage are of interest.
D
Td I
Vr Small-Signal Resistance
(or Dynamic Resistance)
EE105 Fall 2011 Lecture 6, Slide 15 Prof. Salahuddin, UC Berkeley
Reverse-Biased PN Junction as a Current Source
• PN junction diode current is ~independent of the reverse-bias voltage. It depends only on the rate at which minority carriers are introduced into the depletion region.
Key Insight: We can increase the reverse current by injecting minority carriers near to the depletion region.
EE105 Fall 2011 Lecture 6, Slide 16 Prof. Salahuddin, UC Berkeley
BJT Structure and Circuit Symbol• A bipolar junction transistor consists of 2 PN junctions
that form a sandwich of three doped semiconductor regions. The outer two regions are doped the same type; the middle region is doped the opposite type.
EE105 Fall 2011 Lecture 6, Slide 17 Prof. Salahuddin, UC Berkeley
NPN BJT Operation (Qualitative)In the forward active mode of operation:• The collector junction is reverse biased.• The emitter junction is forward biased.
B
C
I
Icurrent gain:
EE105 Fall 2011 Lecture 6, Slide 18 Prof. Salahuddin, UC Berkeley
Base Current• The base current consists of two components:
1) Injection of holes into the emitter, and 2) Recombination of holes with electrons injected from
the emitter.
BC II
EE105 Fall 2011 Lecture 6, Slide 19 Prof. Salahuddin, UC Berkeley
BJT Design• Important features of a well-designed BJT (large ):– Injected minority carriers do not recombine in the
quasi-neutral base region.
– Emitter current is comprised almost entirely of carriers injected into the base (rather than carriers injected into the emitter).
EE105 Fall 2011 Lecture 6, Slide 20 Prof. Salahuddin, UC Berkeley
Carrier Transport in the Base Region• The length of the quasi-neutral base
region (WB = x2-x1) is much smaller than the minority-carrier diffusion length, so that very few of the carriers injected (from the emitter) into the base recombine before they reach the collector-junction depletion region. Minority-carrier diffusion current is
~constant in the quasi-neutral base • The minority-carrier concentration at
the edges of the collector-junction depletion region are ~0.
EE105 Fall 2011 Lecture 6, Slide 21 Prof. Salahuddin, UC Berkeley
Minority-Carrier Diffusion in theQuasi-Neutral (P-type) Base Region
B
VVq
B
iB
BBdiffn
We
N
nqD
dx
dnqDJ
TBE1
1
/2
,
BB
VVq
B
iB
BBdiffn
L
x
Le
N
nqD
dx
dnqDJ
TBE
exp1
1
/2
,
“Long Base”
LB ≡ diffusion length of minority carriers in the quasi-neutral base
“Short Base”
BB
VVqi
B L
x
N
enn
TBE exp
1/2
BB
VVqi
B W
x
N
enn
TBE
11/2
WB ≡ width of quasi-neutral base
EE105 Fall 2011 Lecture 6, Slide 22 Prof. Salahuddin, UC Berkeley
Collector Current
• The equation above shows that the BJT is indeed a voltage-dependent current source; thus it can be used as an amplifier.
BB
iBES
T
BESC
T
BE
BB
iBEC
WN
nqDAI
V
VII
V
V
WN
nqDAI
2
2
whereexp
1exp
EE105 Fall 2011 Lecture 6, Slide 23 Prof. Salahuddin, UC Berkeley
Common-Emitter Current Gain, • Assuming that no minority-carrier recombination occurs
within the quasi-neutral base region:– The collector current is equal to the current due to minority-carrier
injection from the emitter into the base:
– The base current is equal to the current due to minority-carrier injection from the base into the (short) emitter:
• The current gain can thus be expressed as a function of the BJT physical parameters:
1/2
TBE VV
BB
iBEC e
WN
nqDAI
CVV
EE
iEEB
Ie
WN
nqDAI TBE 1/
2
BBE
EEB
WND
WND
EE105 Fall 2011 Lecture 6, Slide 24 Prof. Salahuddin, UC Berkeley
Emitter Current• Applying Kirchhoff’s Current Law to the BJT, we can
easily find the emitter current.
1
1CBCE IIII