国家自然科学奖推荐书 - Semi€¦ · Web viewXia J.B.,Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy,Applied Physics Letters, 2005,87,093116。
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Science 、 Phys.Rev.Lett 、 Adv Materials 等 SCI 顶尖期刊广泛引用 。例如,德国马普固体物理研究所 L. Wang在 Advanced Materials发表文章(Adv. Mater. 2009, 21, 2601)引用本文的结果说明液滴外延是一种可以在晶格匹配材料体系实现 III-V 族量子点的方法 (droplet epitaxy is a growth technique that allows the fabrication of III–V QD structures also in the case of lattice-matched materials, ...,)。美国 IBM 研究中心国际 知名 学者 J. Tersoff 在其 Science 324 , 236 ( 2009 )论文中评价为: Ga 液滴被用于液滴外延形成纳米结构研究中 (… and recently Ga droplets have been applied in nanofabrication via droplet epitaxy)。
此外,澳大利 亚 莫 纳 什大学 Z.Y. Zhou 等在 Phys. Rev. Lett. 111, 036102(2013) 上发表 了量子环机理研究论文 2 处引述该论文:为创新设计光电特性由大小、形状、应变和组分调控量子结构。液滴外延是一种可以调控量子结构性质的有效方法(… to create designer quantum structures where electronic and optical properties are controlled by the size, shape, strain and composition. Droplet epitaxy has recently emerged as a flexible technique for tailoring these properties,…);…液滴外延方法揭示附加原子厚度相对于横向尺寸较小,允许人们采用准平面工艺( … droplet epitaxy reveal that the thickness of the added material is small compared to the lateral dimensions, allowing us to use a quasiplanar approximation throughout,…)。同年,德国 PDI研究所 C. Somaschini等在 Nano Lett. 13, 3607(2013) 以该
实验成果说明液滴法可行性:液滴法外延依赖于 III 族元素的晶化过程 , …, 这 种技术实现的多种简单和复杂 GaAs 纳米结构已经获得演示 (The DE technique relies on the controlled formation of group-III element droplets, …, By this method, several kinds of simple and complex GaAs nanostructures have already been demonstrated,…,)。该项目发展的精确表征大尺寸量子点拓展光谱的能带特性的压力光谱测试
方法及调谐技术(代表性论文 4)受到关注,香港大学的 Yuan Wen等在其文章中(J APPLIED PHYSICS 112, 014301 (2012))两处长段落引用:observed the photoemissions from both the ground and the first excited states in large InAs/GaAs QDs under high hydrostatic pressure at 15 K, and the PCs of the emissions from the two states were determined to be 6.9 and 7.2meV/kbar, respectively,. The pressure applied to the sample was provided by a diamond anvil cell. The pressure was calibrated by using the standard ruby-fluorescence technique. 10 The 488.0 nm。该项目基于量子点发光波长拓展方法及理论模型设计制备的量子点激光器
瑞士、德国合作者发光的研究论文(APPLIED PHYSICS LETTERS 106, 233107 (2015))中评价为只有少数几个实现液氮温度下单光子发光的成功案例:However, a proof of a single photon emission at liquid nitrogen temperature for the In(Ga)As/GaAs QD system, which could allow to construct devices for longer wavelengths, has been shown in a very few cases only, and based on a neutral exciton emission。
美国南加州大学同行则以该项目实现的液氮温度下单光子发射性能作为与其技术路线进行比拟的参照:( JAP120, 243103 (2016))Thus, these SESRE based MTSQDs provide single photon emission comparable to that of InGaAs SAQDs reported in the literature up to 77K (Refs. 65 and 66) but with control on the QD position and significantly improved spectral uniformity. These attributes, and the ease of growing a planarizing overlayer, make SESRE MTSQDs well suited for nanophotonic on-chip integrable single photon source.
单光子器件成果还入选了国家自然科学基金委 2008 年度巡礼成果和 2012年优秀成果(其他附件)。单量子点的生长方法受到诺贝尔获得者奖阿尔费罗夫院士的高度关注:你最近在低密度量子点领域的工作令人印象深刻,很荣幸地邀请你就相关题目做邀请报告,相信你的报告对本次会议的成功至关重要(Your recent results in the field of desorption and ripening of low density InAs quantum dots are really very impressive. We have the pleasure to invite you to give an invited talk…,)(其他附件)。此外,与会人数超千人的“China Nano 2013”会议组委会在其邀请函中也给予高度评价(其他附件):鉴于你在纳米科学技术研究方面的突出贡献,希望你与会分享你的见解)。该会议邀请报告引起国际著名机构 Pan Stanford Publishing关注,邀请就报告题目撰写专著(其他附件)。该项目提出的掺杂 N的表面析出机理(代表性论文 5)受到广泛认可,比
如美国德克萨斯大学 H P. Nair 等 2012 年 APPLIED PHYSICS LETTERS 100, 021103,2012)文章中基于我们的分析结果:At a fixed growth rate, the apparent nitrogen content increased with decreasing growth temperature, consistent with
studies of GaNAs。用于分析其N在GaInSb量子阱的掺杂行为。采用退火技术研究得到的 InGaAsN量子阱的机理文章(代表性论文 6)被
法国欧 洲 加速器中心 G. Ciatto 等 PRB,245212, 75(2007) 引用和认可:GaAsN/GaAs and InGaAsN/GaAs 量子阱发光蓝移归结于 N 扩散出有源区同时 伴 随 N-As , In-Ga 界 面 互 扩 散 机 制 ( Blueshift in GaAsN/GaAs and InGaAsN/GaAs has been attributed either to N diffusion out of the active layer with N-As In-Ga interdiffusion across the heterointerfaces)。
拟合得出 In(Ga)AsN量子阱导带带阶、电子有效质量参数(代表性论文7)被广泛接纳。如 2012 年波兰华沙大学 K. Ryczko与德国维尔兹堡大学论文( J. APPLIED PHYSICS 111, 123503 (2012))中认为: 对 于 N 含量 较 小 的 InGaAsN/GaAs 体系,导带带阶大约为 0.83 被认为是一个得到确认的数值 (the conduction band offset is assumed to be approximately 0.83 for the InGaAsN/GaAs system for the used narrow range of the N contents, and this can be treated as a well established value)。相关成果受 COMMD组委会邀请做大会报告(其他附件):“…你被组委会选择为领域突出的研究工作者…”。该项目报道的 1.6微米 InGaAs(NSb)量子阱激光器(代表性论文 8)被俄科
院微结构物理所 V. Aleshkin(J. APPLIED PHYSICS 109, 123107 (2011))认为是GaAs 基 1.59 微米 量 子 阱 激 光 器 是至今值 得 关 注 的 成 就 : (A noteworthy achievement to date is the observation of a 1.59 um stimulated emission from a GaInNAsSb quantum well laser on a GaAs substrate at room temperature)。
德国 PDI 所 F. Ishikawa 在 J. Appl. Phys. 104, 113502(2008)中指出: 近来GaInNAsSb 量子阱室温连续激光器的成功关键在于提升了室温下量子阱发光效 率 ( Recently, InGaAsNSb quantum wells were utilized for the successful achievements of room temperature continuous-wave operating lasers emitting at 1.55um。The critical issue for the realization of these lasers is the improvement of the photoluminescence efficiency at RT)。本项目此后发展的异变量子阱大幅度提高了发光效率,使激光器波长和阈值性能获得重要突破。英国 Compound semiconductors 美国 Laser Focus World 分别以“ InGaAs laser breaks into telecom territory”、“InGaAs QWs lasers provide alternative to 1.55um GaAs based lasers”为题报道(其他附件)。台湾分子束外延学术界对主要完成人牛智川学术声望给予肯定(其他附件):台湾 MBE 会议始于 2004 年,每年邀请 大约 10 位国际著名学者与会。去年很荣幸地邀请到 PM Petroff, NN Ledentsov 等,…。鉴于您在本领域的声望,邀请您本年度会议邀请报告人 …(Due to your reputation in the field,we would like to invite you to be this year’s invited speaker)。瑞典 S.M. Wang 编撰的《Lattice Engineering》专著中将该项目量子阱激光器写入专门章节成为经典性成果(其他附件)。上述激光器成果中有关InGaAsNSb量子阱的能带特性参数等成果被美国同行在设计制备含 InGaAsNSb的多结太阳能电池研究中作为基础物理依据,他们最终成功实现了 43.5%转换
1、 Gong Z; Niu Z.C . ; Huang S.S.; Fang Z.D.; Sun B.Q.; Xia J.B.,Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy,Applied Physics Letters, 2005,87,093116。
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7、 Pan Z ; Li L.H.; Lin Y.W.; Sun B.Q.; Jiang D.S.; Ge W.K., Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration,Applied Physics Letters,2001,78,2217
8、 Niu Z.C .; Zhang S.Y.; Ni H.Q.; Wu D.H.; Zhao H.; Peng H.L.; Xu Y.Q.; Li S.Y.; He Z.H.; Ren Z.W.; Han Q., GaAs-based room-temperature continuous-wave 1.59um GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy,Applied Physics Letters,2005,87,231121