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EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM
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EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Dec 19, 2015

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Page 1: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

EBB 424E Semiconductor Devices and Optoelectronics

Part II - OptoelectronicsDr Zainovia Lockman

SMMRE,USM

Page 2: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

EBB 424:Semiconductor Devices and Optoelectronics

Part 1:

Semiconductor Devices

Dr. Sabar D. Hutagalung

Part 2:

Optoelectronics

Devices

Dr Zainovia Lockman

70% Exam30% Coursework

Page 3: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Contents of the Course

Light sourcesLight sources

LED Photodetector

Photoconductor

Photovoltaic

LASERS

Light DetectorsLight Detectors

OptoelectronicsOptoelectronics

Page 4: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Scope of the Course

By the end of the course you will be able to describe various optoelectronics devices.

In particular you need to be able to describe:

1. The device configuration

2. Materials requirements

3. Materials selection

4. Materials issues

Page 5: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

What is Optoelectronics?

"Optoelectronics, the alliance of optics and electronics, [is] one of the most

exciting and dynamic industries of the information age. As a strategic

enabling technology, the applications of optoelectronics extend throughout

our everyday lives, including the fields of computing, communication,

entertainment, education, electronic commerce, health care and

transportation. Defense applications include military command and control

functions, imaging, radar, aviation sensors, and optically guided weapons.

Optoelectronics businesses manufacture components such as lasers, optical

discs, image sensors, or optical fibers, and all sorts of equipment and

systems that are critically dependent on optoelectronics components.

Optoelectronics technology is a key enabler of the USD$1.5 Trillion global

information industry."

Page 6: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Light- Emitting Diodes

Red LED White LED

LED for displays Blue LED LED for traffic light

LEDs

Page 7: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

DIODE LASERS

Diode lasers have been used for cutting, surgery, communication (optical fibre),

CD writing and reading etc

Page 8: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Producing Laser in the Lab

Page 9: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Optoelectronic devices for Photovoltaic Applications

Page 10: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Solar Cells

Page 11: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Fibre optics Communication

Transmitter Channel Receiver

IR - Lasers

TransmitterChannel

Receiver

Fibre Optics IR- Photodetector

Page 12: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Head Mounted Display Applications: Next generation head mounted display and virtual reality training

Page 13: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

What is expected of you?

Page 14: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Objectives of the Part II EBB424E

To describe the fundamentals of photon-electron interaction in solid and to relate such understanding with the optoelectronics devices

To develop an appreciation of intrinsic properties of semiconductors focusing on the optical properties of the material

To familiarise with the basic principles of optoelectronic devices (light emitting diode, laser, photodetector and photovoltaic).

To state the materials issues, requirements and selection for a given optoelectronic devices

Page 15: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Introduction to Optoelectronics - Lights

Lecture 1

Page 16: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Lights- Newton and Huygens

Lights as wave? Lights as particles?

Newton

They did not agree They did not agree with each other!with each other!

Huygens

Page 17: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Lights – Einstein and Planck

1905 Einstein –related wave and particle properties of light

Planck - WAVE-PARTICLES DUALITY

E = h Total E of the Photon (particle side)

Frequency (wave side)

Light is emitted in multiples of a certain minimum energy unit. The size of the unit – photon.

Explain the photoelectric effect - electron can be emitted if light is shone on a piece of metal

Energy of the light beam is not spread but propagate like particles

e

Page 18: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Photons

When dealing with events at an atomic scale it is often best to regard light as composed of particles – photon. Forget it being wave. A quanta of light Electromagnetic radiation quantized and occurs

in finite "bundles" of energy = photons The energy of a single photon is given, in terms

of its frequency, f, or wavelength, , as,

Eph = hf = hc/

Page 19: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Maxwell – Electromagnetic wave

Page 20: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Light as Electromagnetic Wave

Light as an electromagnetic wave is characterised by a combinations of time-varying electric field () and magnetic field (H) propagating through space.

Maxwell showed both and H satisfy the same partial differential equation:

H,tc

1H,

2

2

22

Changes in the fields propagate through space with speed c.

Page 21: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Speed of Light, c

Frequency of oscillation, of the fields and their wavelength, o in vacuum are related by; c = o

In any other medium the speed, v is given by; v= c/n =

n = refractive index of the medium = wavelength in the medium

And,

r = relative magnetic permeability of the medium r = relative electric permittivity of the medium

rrn

The speed of light in a medium is related to the electric and magnetic properties of the medium, and

the speed of light can be expressed

Page 22: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Question 1

Relate Planck’s Equation (E = h) with the Speed of Light in a medium (c = )

h = Planck’s constant = eV c = Speed of light = 2.998 x 108 ms-1

Why do you think this equation is important when designing a light transmission devices based on semiconductor diodes?

Relate this with Photon Energy.

Page 23: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Answer 1

E = hc

Wave-like propertiesParticles: photon energy

Page 24: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Answer 1

= 1.24x 10-6 /E

Wavelength

Associated with colours

Energy

Each colour has energy associated with it

Page 25: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Question 2

Based on the equation you have produced in question 1, calculate the photon energy of violet, blue, green, orange and red lights.

Page 26: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Electromagnetic SpectrumShorter wavelength

Longer wavelength

V ~ 3.17eV

B ~ 2.73eV

G ~ 2.52eV

Y ~ 2.15eV

O ~ 2.08eV

R ~ 1.62eV

Larger Photon Energy (eV) Answer 2:

Page 27: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Visible Lights

Lights of wavelength detected by human eyes ~ 450nm to 650nm is called visible light:

Human eyes can detect lights with different colours Each colour is detected with different efficiency.

3.1eV 1.8eV

Spectral Response of Human Eyes

Eff

icie

ncy,

100

%

400nm 600nm 700nm500nm

Page 28: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Interaction Between Light and Bulk Material

1- Refraction

2- Transmission

3a – Specular reflection

3b – Total internal reflection

3c – Diffused reflection

4 – Scattering

There is also dispersion –where different colours bend differently

1- Refraction

2- Transmission

3a – Specular reflection

3b – Total internal reflection

3c – Diffused reflection

4 – Scattering

There is also dispersion –where different colours bend differently

41

3b

2

3a

3c

Incident light

Semi-transparent material

Page 29: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.
Page 30: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Appearance of insulator, metal and semiconductor

Appearance in term of colour depends on the interaction between the light with the electronics configuration of the material.

Normally, High resistiviy material: insulator transparent High conductivity material: metals metallic luster and

opaque Semiconductors coloured, opaque or transparent, colour

depending on the band gap of the material For semiconductors the energy band diagram can explain the

appearance of the material in terms of lustre and colouration

Page 31: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Question 3. Why is Silicon Black and Shiny?

Page 32: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Answer 3.

Need to know, the energy gap of Si Egap = 1.2eV

Need to know visible light photon energy Evis ~ 1.8 – 3.1eV

Evis is larger than Silicon Egap All visible light will be absorbed Silicon appears black Why is Si shiny? A lot of photons absorption occurs in silicon, there are

significant amount of electrons on the conduction band. These electrons are delocalized which induce the lustre and shines.

Page 33: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Question 4. Why is GaP yellow?

Page 34: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Answer 4

Need to know the Egap of GaP Egap = 2.26eV Equivalent to = 549nm. E photons with h > 2.26ev absorb light (i.e.

green, blue and violet) E photons with h < 2.26eV transmit light

(i.e. yellow, orange and red). Sensitivity of human eye is greater for yellow

than red therefore GaP appears yellow/orange.

Page 35: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Colours of Semiconductors

I B G Y O R

EEvisvis= 1.8eV = 1.8eV 3.1eV3.1eV

•If Photon Energy, Evis > Egap Photons will be absorbed

•If Photon Energy, Evis < Egap Photons will transmitted

•If Photon Energy is in the range of Egap ;

•Those with higher energy than Egap will be absorbed.

•We see the colour of the light being transmitted

•If all colours are transmitted = White

Page 36: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Why do you think glass is transparent?

Glass is insulator (huge band gap) The electrons find it hard to jump across a big energy gap (Egap >> 5eV) Egap >> E visible spectrum ~2.7- 1.6eV All colored photon are transmitted, no absorption hence light transmit –

transparent. Defined transmission and absorption by Lambert’s law:

I = Io exp (- l) I = incident beam Io = transmitted beam = total linear absorption coefficient (m-1) = takes into account the loss of intensity from both scattering centers and absorption

centers. = approaching zero for pure insulator.

Page 37: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

What happens during photon absorption process?

Photon interacts with the lattice

Photon interacts with defects

Photon interacts with valance electrons

Page 38: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Absorption Process of SemiconductorsA

bsorp

tion

coeffi

cie

nt

(),

cm

-1

Photon energy (eV)

Absorption spectrum of a semiconductor.

Vis

Eg ~

vis

Wavelength (m)

IRUV

Important region:

Page 39: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Absorption – an important phenomena in describing optical properties of semiconductors

Light, being a form of electromagnetic radiation, interacts with the electronic structure of atoms of a material.

The initial interaction is one of absorption; that is, the electrons of atoms on the surface of a material will absorb the energy of the colliding photons of light and move to the higher-energy states.

The degree of absorption depends, among other things, on the number of free electrons capable of receiving this photon energy.

Page 40: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Absorption Process of Semiconductors

The interaction process is a characteristic of a photon and depends on the energy of the photon (see the pervious slide – the x-axis).

Low-energy photons interact principally by ionization or excitation of the outer orbitals in solids’ atoms.

Light is composed of low-energy photons (< 10 eV) represented by infrared (IR), visible light, and ultraviolet (UV) in the electromagnetic spectrum.

High-energy protons (> 104 eV) are produced by x-rays and gamma rays.

The minimum photon energy required to excite and/or ionize the component atoms of a solid is called the absorption edge or threshold.

Page 41: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Valance-Conduction-Absorption

h

Conduction band, EC

Valance band, EV

EgapEphoton

Process requires the lowest E of photon to initiate electron jumping (excitation)

• EC-EV = h

• EC-EV = Egap

• If h > Egap then transition happens

•Electrons in the conduction band and excited.

Page 42: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

After the absorption then what?

Types Direct and Indirect photon absorption For all absorption process there must be:

Conservation of energy Conservation of momentum or the wavevector

The production of e-h pairs is very important for various electronics devices especially the photovoltaic and photodetectors devices.

The absorbed light can be transformed to current in these devices

Page 43: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Direct Band Gap

K (wave number)h

Conservation of E

h = EC(min) - Ev (max) = Egap

Conservation of wavevector

Kvmax + photon = kc

E

Direct vertical transition

Momentum of photon is negligible

Page 44: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Indirect Band Gap

E

K (wave number)h

Page 45: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Question 5.

For indirect band gap transition, how do the energy and momentum or the wavevector are being conserved?

Page 46: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Answer Question 5 yourself

Page 47: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Light when it travels in a medium can be

absorbed and reemitted by every

atom in its path.

Refraction, Reflection and Dispersion

Defines by refractive index;

n

Small n

High n

n1 = refractive index of material 1

n2 = refractive index of material 2

Page 48: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Total Internal Reflection

n2

i

n1 > n

2i

Incidentlight

t

Transmitted(refracted) light

Reflectedlight

k t

i>cc

TIR

c

Evanescent wave

k i k r

(a) (b) (c)

Light wave travelling in a more dense medium strikes a less dense medium. Depending onthe incidence angle with respect to c, which is determined by the ratio of the refractiveindices, the wave may be transmitted (refracted) or reflected. (a) i < c (b) i = c (c) i

> c and total internal reflection (TIR).

© 1999 S.O. Kasap, Optoelectronics (Prentice Hall)

Page 49: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

Mechanism and Application of TIR

Optical fibre for communication

What sort of materials do you think are suitable for fibre optics cables?

Page 50: EBB 424E Semiconductor Devices and Optoelectronics Part II - Optoelectronics Dr Zainovia Lockman SMMRE,USM.

EndRead EBB424 notes