Features Pin Description z 20V/6A, R DS(ON) <25mΩ @ V GS =4.5V R DS(ON) <34mΩ @ V GS =2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) 1 2 3 4 5 6 7 8 D S1 S1 G1 G2 S2 S2 D Top View TSSOP-8 N Channel MOSFET Applications z Portable Equipment and Battery Powered Systems. Dual N-Channel Enhancement Mode MOSFET FL8205A FANGJING 方晶科技 R Absolute Maximum Ratings (T A =25°C Unless Otherwise Noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 20 V V GSS Gate-Source Voltage ±8 I D * Continuous Drain Current V GS =4.5V 6 A I DM * 300μs Pulsed Drain Current 20 I S * Diode Continuous Forward Current 1 A T J Maximum Junction Temperature 150 °C T STG Storage Temperature Range -55 to 150 P D * Maximum Power Dissipation T A =25°C 1.25 W T A =100°C 0.5 R θJA * Thermal Resistance-Junction to Ambient 100 °C/W Notes: *Surface Mounted on 1in 2 pad area, t ≤ 10sec. 1/6 www.fangjing.com.tw FANGJING TECHNOLOGY STOCK CO., LIMITED.
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Dual N-Channel Enhancement Mode MOSFET · 8205A Unit Min. Typ. Max. Dynamic Characteristics b R G Gate Resistance V GS=0V,V DS=0V,F=1MHz 5.5 Ω C iss Input Capacitance V GS=0V, V
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Features Pin Description
20V/6A,
RDS(ON)<25mΩ @ VGS=4.5V
RDS(ON) <34mΩ @ VGS=2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
1
2
3
4 5
6
7
8D
S1
S1
G1 G2
S2
S2
D
Top View
TSSOP-8
N Channel MOSFET
Applications
Portable Equipment and Battery Powered Systems.
Dual N-Channel Enhancement Mode MOSFET
FL8205AFANGJING
方晶科技R
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol Parameter Rating Unit
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±8
ID* Continuous Drain Current VGS=4.5V
6 A
IDM* 300μs Pulsed Drain Current 20 IS* Diode Continuous Forward Current 1 A
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150
PD* Maximum Power Dissipation TA=25°C 1.25
WTA=100°C 0.5
RθJA* Thermal Resistance-Junction to Ambient 100 °C/W Notes: