dimensional van der Waals heterostructure devices ... · Supplementary Data Tunneling-based rectification and photoresponsivity in two-dimensional van der Waals heterostructure devices
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Supplementary Data
Tunneling-based rectification and photoresponsivity in two-
dimensional van der Waals heterostructure devices
Amir Muhammad Afzala, b,*, Yasir Javedc, Naveed Akhtar Shadd, Muhammad Zahir
Iqbale,#, Ghulam Dastgeer b, M. Munir Sajidd, Sohail Mumtaza
aDepartment of Electrical and Biological Physics, Kwangwoon University, Seoul, 01897, Republic of
Korea, bDepartment of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul
05006, Korea, cDepartment of Physics, University of Agriculture, Faisalabad,38000 Pakistan, dDepartment
of Physics, GC University, Faisalabad, 38000 Pakistan, eNanotechnology Research Laboratory, Faculty of
Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber
= ideality factor, rise and decay time, Voc = open-circuit voltage, Isc = short-circuit 𝜂 𝜆1/𝜆2 =
current, D = detectivity, R = responsivity, EQE = external quantum efficiency
Table 1. Comparison of important parameters for the heterostructure devices with h-BN and
without h-BN
p/nheterostructur
e
Thickness(nm)
Rectification
ratio (RR)
Idealityfactor
Responsivity
(mA/W)
EQE (%)
Reference
WSe2/MoS2 0.8/0.8 --- --- 10 --- 1
BP/MoS2 11/0.8 105 2.7 11 0.3 2
BP/BP 8.5 103 1 3
BP/WeSe2 20/12 103 --- 3.1 4
WSe2/MoS2 25/18 106 1.5 170 --- 5
MoS2/MoTe2 2/5 103 --- --- --- 6
MoS2/WSe2 0.65/0.7 50 --- 11 1.5 7
BP/ReS2 5/12 106 1.04 8 0.3 8
BP/ReSe2 (This work)
5.9/10 >106 1.22 7.5 2.09
BP/h-BN/ReSe2
(This work)
6/.91/10 107 1.065 12 2.79
EQE = external quantum efficiency
Table 2. Comparison of key parameters such as rectification ratio, ideality factor, responsivity,
external quantum efficiency with previously reported values in TMDs based devices.
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