Differential 2R Crosspoint RRAM for Memory system in Mobile Electronics with Zero Standby Current Pi-Feng Chiu, Pengpeng Lu, Zeying Xin EECS, UC Berkeley.

Differential 2R Crosspoint RRAM for

Memory system in Mobile Electronics with Zero Standby Current

Pi-Feng Chiu, Pengpeng Lu, Zeying Xin

EECS, UC Berkeley05/06/2013

Outline• Introduction

o Memory Hierarchyo RRAM switching mechanism

• Issues of Crosspoint Array• Proposed Differential 2R cell

o Cell Characteristicso Differential 2R cell and array design

• Circuit Implementationo Divided WL and Sense-before

• Simulation Results• Comparison• Conclusion

Memory Hierarchy

CPU Register

CacheL1L2

Main Memory(DRAM)

Permanent StorageHard Disk Drive, Solid State Drive

Hig

h m

emor

y de

nsity

High speed

Perfect Memory:NonvolatileHigh speedSmall AreaLow powerHigh Endurance

Leakage issue

Slow

RRAM switching mechanism

• RRAM: Resistive Random Access Memory• Sandwiched cell structure • SET: Switching to Low Resistance State (LRS)• RESET: Switching to High Resistance State (HRS)

Crosspoint Issues

(a)

(b)

(c)

1T1R Crosspoint structure

Leakage issues:Write – write energy efficiencyRead – read margin

Write Disturbance n: BL number, m: WL number

Cell Characteristics• Tradeoffs

o RLow vs. write energyo Write time vs. Write voltageo Write energy vs. Write voltageo Read margin vs. Rlowo Sensitivity to Write time

Differential 2R cell

Write-1 Write-0

Ra SET RESET

Rb RESET SET

WL Vwrite 0

BL 0 Vwrite

Assumption:VSET=VRESET=Vwrite

WLa[1]

WLb[1]WLa[0]

WLb[0]

BL0 BL1 BL2

Ra

Rb

1 cell

+

-

+

-

In read operation, WLa=Vread, WLb=0Voltage-sensing VBL

VBL=Vread*Rb/(Ra+Rb)

Divided WL

GWLaGWLb

LWLa

LWLb

Ra

Rb

BL

SWa SWb

…

• To constrain overall write current to 100~200uA, WL length need to be set to 4-cell wide

• Divided WL: decouple local WLs and connect to global WL by switches.

• Tradeoff between leakage current and area penalty

BEOL process enables stack ability

Sense-before-Write• Resistance value drops if a SET pulse repeatedly

access to the cell.

• Solution:

I(cell) Targeted resistance valueLowest resistance value

Write?

Read

If DIN=DOUT

?DOUT

DIN

Pass

Write

Yes

No

Block diagram

...B

lock

[0]

Blo

ck [1

]

Blo

ck [2

]

Blo

ck [6

2]

Blo

ck [6

3]

WL

mul

tiple

xer

and

driv

er

WERE

CLK

DIN[7:0]A[7:0] SAEN

BL multiplexer and driver

VwriteVhalfVread

VrefStrongARM Sense Amplifier

DOUT[7:0]

Control circuit

LWLGWL

I/O[7:0]

VBL VREF

VOUT

SAENb

SAENb SAENb

SAENb

WLa[0]

WLb[0]

WLa[1]

WLb[1]

BL[1]

DOUT

I(cell01b)

I(cell01a)

Write-0to cell01

0

~Vwrite/2

~Vwrite

SET

RESET

Write-1to cell11

R1R0

Vref

Write operationRead operation

Features

ComparisonDifferential 2R RRAM

SRAM

Performance 500MHz > 1GHz

Active Power Large (DC current)

Small (Static Logic)

Standby Leakage

0 570pJ/cell

Area 0.04 um2 (*) 0.1 um2 (22nm)

Endurance ~108 >1014*: assume metal width and space are 50nm, area = (0.05*4)2

Fit for L2/L3 cache in mobile electronics to save battery life

Conclusion• Differential 2R crosspoint RRAM design

o 64KB RRAM circuit o Divided WL and Sense-before-Write approacho 28/32nm PTM, RRAM cell model, Eldo simulator

• Crosspoint RRAM Cache?o Area: yeso Power: depending on applicationo Endurance

• Future Work:o Cell characterization o Leakage reduction, Cell distribution

?

Thanks!

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