DFM: Status and Trends · 2008-06-11 · Predictable Success DFM: Status and Trends Antun Domic, Sr. VP and GM Implementation Group EDS Fair Yokohama, Japan January 2008

Predictable Success

DFM: Status and TrendsAntun Domic, Sr. VP and GM Implementation Group

EDS Fair

Yokohama, JapanJanuary 2008

© 2006 Synopsys, Inc. (2)

Predictable Success

Agenda

• Status Today

••• Future TrendsFuture TrendsFuture Trends

© 2006 Synopsys, Inc. (3)

Predictable Success

VDD1

VDD2

CCS Models Enable Accurate ResultsLess Characterization Cost, Less Design Margin

No-linear Effects of Process Variation• Statistical models

Non-linear Waveforms:• High Impedance nets• Miller Effect• Signal Integrity• Double Switching

Source: Synopsys Inc.

Less VT Corners • Multi-Voltage Design• IR-Drop based STA

Source: Synopsys Inc.

Source: Synopsys Inc.

Source: R. Chau, Intel 2003

Source: Synopsys Inc.

Temperature

Volta

ge

Characterization: 27 Corners

0.80V, -40C

1.20V, -40C

0.80V, 125 C

0.85V, -40C

0.90V, -40C

0.95V, -40C

1.00V, -40C

1.05V, -40C

1.10V, -40C

1.15V, -40C

0.80V, 25 C

0.85V, 25 C

0.90V, 25 C

0.95V, 25 C

1.00V, 25 C

1.05V, 25 C

1.10V, 25 C

1.15V, 25 C

1.20V, 25 C

0.85V, 125 C

0.90V, 125 C

0.95V, 125 C

1.00V, 125 C

1.05V, 125 C

1.10V, 125 C

1.15V, 125 C

1.20V, 125 C CCS

Characterization: 6 CornersAccuracy: 2-3% vs. HSPICE

1.20V, -40C

1.00V, -40C

0.80V, -40C 0.80V, 125 C

1.00V, 125 C

1.20V, 125 C

NLDM

Temperature

Volta

ge

Characterization: 27 Corners

0.80V, -40C

1.20V, -40C

0.80V, 125 C

0.85V, -40C

0.90V, -40C

0.95V, -40C

1.00V, -40C

1.05V, -40C

1.10V, -40C

1.15V, -40C

0.80V, 25 C

0.85V, 25 C

0.90V, 25 C

0.95V, 25 C

1.00V, 25 C

1.05V, 25 C

1.10V, 25 C

1.15V, 25 C

1.20V, 25 C

0.85V, 125 C

0.90V, 125 C

0.95V, 125 C

1.00V, 125 C

1.05V, 125 C

1.10V, 125 C

1.15V, 125 C

1.20V, 125 C CCS

Characterization: 6 CornersAccuracy: 2-3% vs. HSPICE

1.20V, -40C

1.00V, -40C

0.80V, -40C 0.80V, 125 C

1.00V, 125 C

1.20V, 125 C

NLDM

© 2006 Synopsys, Inc. (4)

Predictable Success

Addressing Variation at SignoffA Staged Approach

Most accurate; concurrent die-to-die and on-chip analysis

Intermediate step to statistical

Easy set-up using single bc/wc numbers

Benefit

Requires most characterization data for accurate analysis

Requires silicon data from foundries or in-house fabs

Safe, but pessimistic; becomes overloaded to model many effects

Challenge

Initial usage at 65-nm90-nm to 65-nmDown to 65-nmUsage

Statistical propagation of delay & slew

Path derate as a function of logic depth & cell location

Global derate for early/late timing

Approach

Variation-aware STA (PT & StarRC VX)

Advanced OCV Modeling (AOCVM)

On Chip Variation (OCV)

© 2006 Synopsys, Inc. (5)

Predictable Success

IP Vendor ProvidedIP Vendor ProvidedFoundry ProvidedFoundry Provided

Variation-Aware SSTA FlowGates and Interconnect

prob

abili

ty

CCSVariation-aware

library

Star-RCXT™ VXSensitivity-based

Extraction

Device and interconnectProcess Parameter

Variation Distributions

SPEF w/ sensitivity Variation Reports

PrimeTime® VXVariation-aware STA

Single nxtgrdw/ sensitivity

Netlist

• Accurate RC extraction• Accurate delay calc, STA,

constraints handling, etc.• Accurate models• Correlates to HSpice-

MonteCarlo

Statistical HSPICE Models

Libe

rty™

NC

XC

hara

cter

izat

ion

© 2006 Synopsys, Inc. (6)

Predictable Success

DFM in Physical DesignRespecting Timing, Area, Power, SI

ParticlesParticles Critical Area AnalysisWire Spreading / Widening

LithographyLithography Litho-aware RoutingLitho Hotspot Correction

CMPCMP Rule-based Metal FillModel-Based Metal Fill

ViasVias Via Minimization Redundant Vias

Tim

ing,

Are

a, P

ower

& S

ITi

min

g, A

rea,

Pow

er &

SI

© 2006 Synopsys, Inc. (7)

Predictable Success

CMP Model-Based Metal Fill Uses CMP Simulation Results as Input

Rule-Based CMP-Aware Model-BasedPattern selection based on simulation

© 2006 Synopsys, Inc. (8)

Predictable Success

Litho-Aware Routing: PreventionSupport for Litho-Derived Design Rules

• Avoidance and prevention of unfriendly patternsJogs, notches and gapsLess number of corners

• Support of complex litho related 45nm design rules such as via enclosure, end-of-line rules, …

S

SSW

0.6S

0.6S

End of Line Rules

© 2006 Synopsys, Inc. (9)

Predictable Success

Litho Hotspots: Detection & CorrectionHotspot Identification & Layout Modification

PrimeYield LCCHotspot Detection

IC Compiler Hotspot Correction

Litho Hotspot Detected

Modified Layout

© 2006 Synopsys, Inc. (10)

Predictable Success

Predictable Success