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Device Fabrication Facilities NFF Jeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics 25, 50, 100 kV accelerating voltage 2 nm minimum spot size 12 MHz scanning rate 150 x 190 mm write area 0.62 nm stage movement precision < 25 nm stitching & overlay accuracy MCPF e_LiNE & ionLiNE e_LiNE is a ultra high resolution electron beam lithography system and nano-engineering workstation. Key applications: Lithography on 4 inch samples; Electron beam induced deposition and etching; In-situ electrical measurements and nano- manipulation, e.g. CNT or nanorods. ionLiNE is dedicated to ion beam
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Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Dec 20, 2015

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Page 1: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Device Fabrication Facilities

NFF Jeol

JBX6300FS

Direct write on wafers, high throughput, mask writing, for nanoelectronics

– 25, 50, 100 kV accelerating voltage

– 2 nm minimum spot size

– 12 MHz scanning rate

– 150 x 190 mm write area

– 0.62 nm stage movement precision

– < 25 nm stitching & overlay accuracy

MCPF e_LiNE & ionLiNE e_LiNE is a ultra high resolution electron beam lithography system and nano-engineering workstation. Key applications: Lithography on 4 inch samples; Electron beam induced deposition and etching; In-situ electrical measurements and nano-manipulation, e.g. CNT or nanorods.

ionLiNE is dedicated to ion beam nanolithography, fabrication, and engineering. Key applications: Low dose ion events; Thin film engineering; Surface fictionalization; Localized defect injection.

Page 2: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

1. Light sources: Ar+ laser, He-Cd laser, Xe-lamp, Ti-sapphire fs laser.

2. Photoluminescence (PL), excitation PL, photoconductivity facilities.

3. Modulated photo-reflectance facilities.

4. Hamamatsu Streak Camera C5680 for time-resolved PL.

5. OI Spectro-Mag 4000 system: magnetic field up to 7T; sample temperature range from 5K to 300K.

6. OI Spectro-Mag 2000 system: magnetic field up to 14T; sample temperature range from 0.3K to 80K.

7. Closed cycle (10 - 300K) system for variable temperature transport and optical measurements.

8. LHe cryostat (2 – 300K) for variable temperature magneto-transport measurements.

9. LN2 cryostat (77 – 450K) for variable temperature magneto-transport and optical measurements.

10.Various electronic equipments for transport measurements

Laboratory Equipment List

Page 3: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Quantum wire resonant tunneling diode fabrication by photolithography

Page 4: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Structure fabricated by e-beam lithography

Page 5: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

2 3 4 5 60.0000

0.0002

0.0004

0.0006

T=1.6K

Cur

rent

(A

)

sweep down

sweep up

10T

12T

8T

4T

B=0T

Voltage(V)

Low temperature and high magnetic field transport measurements

Page 6: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Low temperature magneto-photoluminescence measurements

Page 7: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Variable temperature magneto-transport measurements

Page 8: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Transport measurement facilities

Oxford Spectro-Mag 2000 system (B: 014T; T: 0.3K80K)

Page 9: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

LHe cryostat (2 – 300K, 0 – 800mT))

Page 10: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Oxford Spectro-Mag 4000 system (B: 07T; T: 5K300K)

Magneto-optical measurement facilities

Page 11: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Spex 1403 monochromator

Page 12: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Closed cycle (10 - 300K) system

Page 13: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Hamamatsu Streak Camera

Page 14: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

2D image including spectra and temporal information

Time

Wavelength

Page 15: Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Electronic equipments for transport measurements