Device Fabrication Facilities NFF Jeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics – 25, 50, 100 kV accelerating voltage – 2 nm minimum spot size – 12 MHz scanning rate – 150 x 190 mm write area – 0.62 nm stage movement precision – < 25 nm stitching & overlay accuracy MCPF e_LiNE & ionLiNE e_LiNE is a ultra high resolution electron beam lithography system and nano-engineering workstation. Key applications: Lithography on 4 inch samples; Electron beam induced deposition and etching; In-situ electrical measurements and nano- manipulation, e.g. CNT or nanorods. ionLiNE is dedicated to ion beam
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Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.
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Device Fabrication Facilities
NFF Jeol
JBX6300FS
Direct write on wafers, high throughput, mask writing, for nanoelectronics
– 25, 50, 100 kV accelerating voltage
– 2 nm minimum spot size
– 12 MHz scanning rate
– 150 x 190 mm write area
– 0.62 nm stage movement precision
– < 25 nm stitching & overlay accuracy
MCPF e_LiNE & ionLiNE e_LiNE is a ultra high resolution electron beam lithography system and nano-engineering workstation. Key applications: Lithography on 4 inch samples; Electron beam induced deposition and etching; In-situ electrical measurements and nano-manipulation, e.g. CNT or nanorods.
ionLiNE is dedicated to ion beam nanolithography, fabrication, and engineering. Key applications: Low dose ion events; Thin film engineering; Surface fictionalization; Localized defect injection.