Developing Nanostructured Inorganic-Organic Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications Hybrid Semiconductors for Optoelectronic Applications Jing Li, Rutgers University New Brunswick, DMR 0706069 Jing Li, Rutgers University New Brunswick, DMR 0706069 Activities and Findings • Synthesized the first perfectly ordered crystal lattice of semiconductor quantum dots, In 2 Te 3 (trien). • Discovered and characterized a number of low band gap hybrid semiconductors based on III-VI and V-VI binary and I-III-VI and I-V-VI ternary compounds that are potentially useful for photovoltaic and thermoelectric applications. • Continued to modify and optimize the structure and composition of M 2 Q 2 (ba) type double-layer hybrid structures to enhance their white light emission properties. Publications • Huang, X.-Y., Li, J. et. al. , Angew. Chem. 2009, 48, 7871. • Li, J.; Huang, X.-Y. in Oxford Handbook of Nanoscience and Technology: Frontiers and Advances , Oxford University Press, ISBN: 978-0-19- 953305-3, 2010. • Danilovic, D.; Hamida, Y.; Yuen, T. Li, J.; J. Appl. Phys. 2010, 107, 09E153-1-3. • Wu, M.; Li, J. et. al. Chem. Comm., 2010, 46, 1649. • Ki, W., Li, J. et. al. J. Mater. Chem. Accepted. • Yao, H.B.; Zhang, X.; Wang, X.L.; Yu, S.H.; Li, J.; Chem. Mater. Submitted. • Banerjee, D. kim, S.J. Wu, H.H.; Li, J. Inorg. Chem. Submitted. • Li, J.; Huang. X. US Patent, E041427, 2010. Intellectual Merit Intellectual Merit Top: Construction of small band gap In 2 Te 3 quantum dots (~1.2 nm) in solid state. We demonstrate here the first perfectly ordered semiconductor QD crystal lattice. Bottom-Left: Optical absorption spectra of the parent structure In 2 Te 3 and the hybrid In 2 Te 3 (L). A blue shift of ~1.8 eV is observed. Bottom-Right: Largely enhanced quantum efficiency of white light emission of hybrid [Zn 2 S 2-2x Se 2x (ba)] systems. In 2 Te 3 (L) In 2 Te 3 QY:~15%