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DETECTOR TESTING FACILITY AT RBI (IBIC (Ion Beam Induced Charge) EXPERIMENT) Veljko Grilj Ruđer Bošković Institute, Zagreb, Croatia Silicon Detector Workshop Split, Croatia, 8-10 October 2012
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Detector testing facility a t RBI (IBIC ( Ion Beam Induced Charge ) experiment)

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Veljko Grilj Ruđer Bošković Institute, Zagreb, Croatia. Detector testing facility a t RBI (IBIC ( Ion Beam Induced Charge ) experiment). Silicon Detector Workshop Split, Croatia, 8-10 October 2012. 1. Accelerators. 1.0 MV HVE Tandetron accelerator. - PowerPoint PPT Presentation
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Page 1: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

DETECTOR TESTING FACILITY AT RBI(IBIC (Ion Beam Induced Charge) EXPERIMENT)

Veljko Grilj

Ruđer Bošković Institute, Zagreb, Croatia

Silicon Detector WorkshopSplit, Croatia, 8-10 October 2012

Page 2: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

1. ACCELERATORS 1.0 MV HVE

Tandetron accelerator

6.0 MV EN Tandem Van de Graaff accelerator

IAEA beam line

TOF ERDA

PIXE/RBS

Dual-beam

irradiation

Ion microprobe

Nuclear reactions

In-air PIXE

PIXE crystal spectromet

er

Det.test

.IBIC

12

Page 3: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

1.1. New detector testing beam line

1. Beam deflector and/or scanner

2. Pre-chamber with beam degrader/diffuser

3. Final chamber with beam in air capability

Page 4: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

1.2. Nuclear microprobe

XY

protonbeam

scangenerator

XY

quadrupole doubletfocusing lens

sampleobject slits

IBIC signal

IBIC - chargecollection efficiency

images

IONS- p, , Li, C, O,..

RANGE - 2 to 200 m

ION RATE- currents 0 - 106 p/s

ION POSITION- focusing and scanning

Page 5: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

500 10001E-6

1E-5

1E-4

1E-3

0,01

0,1

1

10

100

1000

10000

100000

Num

ber o

f cha

rge

pairs

(ion

*nm

)-1

Depth (nm)

protons

CSi Cu I

Eions = 1 MeV/amuMIPs

Silicon I 127 Si 28 C 12 He 4 H 1Range(µm)E=1 MeV

0.37 1.13 1.6 3.5 16.3

Range (µm)E=10 MeV

3.7 4.8 9.5 69.7 709

proton

He12C

28Si127I

1.3. Available ion beams

Accel. voltages 0.1 to 6.0 MVNegative Ion sources:- Duoplasmatron- RF He- Sputtering

Page 6: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

V

Q

V

Vout

Ouput signal Vout

Deposited energy

Principles of radiation detection techniques

Vout = F (deposited energy, free carrier transport)

Nuclear spectroscopy Well known

Free charge genetration and

transport

Page 7: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

V

Q

V

Vout

Ouput signal Vout

Deposited energy

Principles of IBIC

Vout = F (deposited energy, free carrier transport)

Free charge genetration and

transport

Well known Material characterization

Page 8: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

2

2

2

220

20

24

1ln2ln4cv

cv

IvmNZ

vmze

dxdE

Bethe formula:

a) Energy deposition by ions

Principles of IBICb) Creation of e-h pairs

6/ 10

eVMeVE

Neh

dephe

Page 9: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=0

v dvq)t(I

year 1964

Page 10: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

V

Q

V

Vout

d

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

T=1

dvq)t(I

Page 11: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=2

dvq)t(I

Page 12: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=3

dvq)t(I

Page 13: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

V

Q

V

Vout

d

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

T=4

dvq)t(I

Page 14: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=5

dvq)t(I

Page 15: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=6

dvq)t(I

Page 16: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=7

dvq)t(I

Page 17: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=8

dvq)t(I

Page 18: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=9

dvq)t(I

Page 19: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=10

dvq)t(I

Page 20: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

c) Free charge carrier transport → charge induced at electodes

Principles of IBIC

.

))((

constVii

jVtrEvqi

Gunn’s theorem:

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

V

Q

V

Vout

d

T=11

Page 21: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

Impact of defects on charge carriers mobility:Principles of IBIC

-2 0 2 4 6 8 10 12 14 16

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

-2 0 2 4 6 8 10 12 14

0.000

0.025

0.050

0.075

0.0

0.2

0.4

0.6

0.8

1.0

I

Time

Q

dvqI

qQtot

qQtot

t

dvqI exp

created

induced

QQCCE - physical opservable:

Page 22: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

Principles of IBIC

startifinali

induced VVqQ

- direct implication from Gunn’s theorem:

.

))((

constVii

jVtrEvqi

- consequences:

electronsholes

ion beam

CCE 100%

a)

b)- V0 - V0

-V 0

he

Page 23: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE - theory

Advantages of using focused ions:- spatial resolution- wide spread of ion ranges

Principles of IBIC

20 m

20 m

Electrons10 keV

Electrons40 keV2 MeV H+ in Si 3 MeV H+ in Si

4 MeV H+ in Si

2 m

4 m

6 m

47 m 90 m 147 m

Page 24: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE

PIN diode

Samples

Page 25: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE

CVDdiamond

CdInGaSesolar cell

Si DSSD(16x16 strips)

Ion beam

Samples

Laura Grassi, Wednesday,

16:00h

Page 26: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

2. ION BEAM INDUCED CHARGE

100 m

Geometries

Page 27: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

- by proper selection of ion type and energy, CCE (charge collection efficiency) at different sample depths can be imaged.

4.5 MeV Lirange 6μm

3 MeV protonsrange 90 μm

Si Schotky diode

proton

He12C

28Si127I

surface

bulk

Frontal IBIC

Page 28: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

4.5 MeV Li7 ions (range in Si 8.5 m)

7.875 O16 ions(range in Si 4.5 m)

8.25.4

0

5.4

0

m

ionsLi

m

ionsO

dxdxdE

dxdxdE

Li image - O image / 2.8IBIC between 4.5 and 8.5 m

Frontal IBIC – depth profiling

Si Schotky diode

Page 29: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

Frontal IBIC – drift & diffusion

d

W p

W

neutraldepletion dxLWx

dxdEdx

dxdEQQQ exp

0

drift diffusion

E ≠ 0

E = 0

minority carrier diffusion length

4H-SiC diode

Page 30: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

d

W p

W

neutraldepletion dxLWx

dxdEdx

dxdEQQQ exp

0

drift diffusion

E ≠ 0

E = 0

Frontal IBIC – drift & diffusion

4H-SiC diode

Page 31: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

d

W p

W

neutraldepletion dxLWx

dxdEdx

dxdEQQQ exp

0

drift diffusion

E ≠ 0

E = 0

Frontal IBIC – drift & diffusion

4H-SiC diode

Page 32: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

d

W p

W

neutraldepletion dxLWx

dxdEdx

dxdEQQQ exp

0

drift diffusion

E ≠ 0

- direct measurement of diffusion length

Lp = (9.0±0.3) μm

Frontal IBIC – drift & diffusion

4H-SiC diode

Page 33: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

Frontal IBIC – μτ mapping

E

ddECCE

eh

eh

/

/ exp1

- from Gunn’s theorem with assumptions of full depletion, constant electric field and generation near one electrode:

Vcmave /101 23,

Vcmavh /104 25,

electrons holes

Hecht equation

CdZnTe- sample thickness > 2 mm

- IBIC with 2 MeV p+, range < 30 μm

M. Veale et al., IEEE TNS, 2008

Page 34: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

Si power diode

E = 0

pn junction

E < 0

ion beam

0 zd z

CCE (z<zd) ≈ 1CCE (z>zd) = exp(-(z-zd)/Lp,n)hole or electron

diffusion length

3. IBIC EXAMPLES

Lateral IBIC – drift and diffusion

Page 35: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3 MeV proton beam

X-Y scanning

Cooling-heating

Bias Preamplifier Amplifier

ADC

Digital oscilloscope

DSO

TRIBIC

DAQIBIC MAPS

CdZnTeAu-contacts

3. IBIC EXAMPLES

Temperature dependent lateral IBIC

CdZnTe

- temperature range 166-329 K

Page 36: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

()e=(1.4)*10-3 cm2/V()h=1*10-5 cm2/V

IBIC line scan (anode to cathode)for CCE=100%

3. IBIC EXAMPLES

Temperature dependent lateral IBIC

CdZnTe

Page 37: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

Radiation hardness tests

- For 100% ion impact detection efficiency, IBIC

can be used to monitor irradiation fluence

- Irradiation of arbitrary shapes - On-line monitoring of CCE degradation

Ion beam induced damage:

50 Li7 m-2 = 5×109 cm-2

6 Li7 m-2 = 6×108 cm-2

(4 events per pixel)

IBIC on-line monitoring:

Page 38: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

Irradiation pattern (3 x3 quadrants, 50 x 50 pixels, 100 x 100 m2 each, 20 m gaps, tirrad = 5 min. – 3 h )

3. IBIC EXAMPLES

Radiation hardness tests

- damage done with He, Li, O & Cl ions of similar range

Si diode

Page 39: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

3. IBIC EXAMPLES

Radiation hardness tests Modeling of CCE:- doping profiles & el. field (CV)- drift velocity profiles (el. field)- hole contribution negligible- vacancy profile (SRIM)- predominantly divacancies (DLTS)- dE/dx from (SRIM)- electron lifetime:

k = 0.88 *10-15

k = 0.18 !!18% of radiation induced defects leads to stable

divacancies !

heheKCCE ,*

,*1

hehek ,, effective fluence

Si diode

Page 40: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

4. ION INDUCED DLTS

Question: how to calculate the energy levels of produced traps?

Answer: DLTS, but what if.....a) number of traps is very very large? b) I want good spatial resolution? c) my sample is diamod?

Radiation produces lattice defects el. active traps, CCE<100%

Page 41: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

4. ION INDUCED DLTS

Question: how to calculate the energy levels of produced traps?

Answer: DLTS, but what if.....a) number of traps is very very large? b) I want good spatial resolution? c) my sample is diamod?Ion Induced

DLTSSteps:- IBIC with MeV ions, charge carriers will fill traps - record cumulative collected charge in time using charge sensitive preamp and digital scope at different temperatures- choose rate windows like in conventional DLTS- plot Q(t2)-Q(t1) vs. T- make Arrhenius analysis and get activation energy of the defect

Radiation produces lattice defects el. active traps, CCE<100%

Page 42: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

4. ION INDUCED DLTS 6H-SiC diode

- irradiation with 1 MeV electrons, 215101 cm el. active traps, CCE<100%- IBIC with 5.486 MeV alphas

cumulative collected charge 250K<T<320 K

Q(t2)-Q(t1) vs. T

Estimated activation energy:IIDLTS DLTS

0.50±0.05 eV 0.53±0.07 eV

N. Iwamoto et al., IEEE TNS, 2011

Page 43: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

5. TIME RESOLVED IBIC - TRIBIC

C. Canali, E. Gatti, S.F. Koslov, P.F. Manfredi, C. Manfredotti, F. Nava, A. QuiriniNucl. Instr. Meth. 160 (1979) 73-77

t

dvqI exp

ns15

(transient current technique, TCT)- use of current sensitive amplifier instead of charge

sensitive- high frequency oscilloscope, - novel technique ???

400 μm thick natural diamond

Page 44: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

5. TIME RESOLVED IBIC - TRIBIC

- 2 GHz, 40 dB, 200ps rise time amplifier (CIVIDEC)- broad-band 3GHz scope (LeCroy)

TCT on scCVD diamond at low temperatures H. Jansen (CERN), CARAT

Workshop, GSI, 2011

Page 45: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

Lower fields are required to reach saturation velocity at low tempertures

5. TIME RESOLVED IBIC - TRIBIC Saturation velocity

H. Jansen (CERN), CARAT Workshop, GSI, 2011

Page 46: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

Plasma effects

5. TIME RESOLVED IBIC - TRIBIC Plasma effects

Page 47: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

Significantely higher charge trapping at low temperatures !!

5. TIME RESOLVED IBIC - TRIBIC Charge trapping/detrapping

H. Jansen (CERN), CARAT Workshop, GSI, 2011

Page 48: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

Detrapping (~ 10 ns)

5. TIME RESOLVED IBIC - TRIBIC Charge trapping/detrapping

H. Jansen (CERN), CARAT Workshop, GSI, 2011

Page 49: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

5. TIME RESOLVED IBIC - TRIBIC

Position sensitivity- scCVD diamond, 500 μm thick- lateral scan with 4.5 MEV p- (μτ)e< (μτ)h

- 6 GHz, 15dB preamp (Minicircuits)- 5 GHz, 10 GS/s scope (LeCroy)

0 500μm

Achievable resolution ≈ 10 μm

500 μm thick scCVD diamond

Page 50: Detector testing facility a t  RBI (IBIC ( Ion Beam Induced Charge ) experiment)

Thank you for attention!