Detection of Structure and Electrical Level of Point Defects in Semi-Insulating SiC M. E. Zvanut, University of Alabama at Birmingham, DMR- 0506069 High-purity SiC material is needed for electronic applications that require fast response and high electrical resistivity. Certain point defects can cause undesirable conductivity. We use photo- induced electron paramagnetic resonance (EPR) to study defects and measure the energy required to remove an electron from a defect-a quantity directly related to conductivity. The defect of interest is thought to be a carbon vacancy-carbon antisite pair. We compare the EPR data obtained from samples grown by a fast growth method, halide chemical vapor deposition (HCVD), with the more traditional, but slower physical vapor transport technique. The results appear to be similar, A student adjusts optics for photo electron para-magnetic resonance measurement (top); Model of electronic transfer between two different defects: carbon vacancy (left) and carbon vacancy - antisite pair (right). Si Si Si Si e - C Si Si Si