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International Journal of Electronics and Communication Engineering & Technology (IJECET),
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 3, May – June (2013), © IAEME
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DESIGN OF A UHF BAND LNA USING ACTIVE INDUCTOR WITH
FFP NOISE CANCELLING TECHNIQUE
VIKAS KUMAR and R. S. GAMAD
Department of Electronics & Instrumentation Engineering,
Shri G. S. Institute of Technology and Science, Indore.
ABSTRACT
This paper reports an area-efficient LNA design using an active inductor which can be
realised in various UHF band receivers. The overall low noise performance of LNA is
achieved by cancelling the inductor noise through additional feed forward path. This circuit is
implemented using 0.18µm CMOS technology with cadence environment and its operating
range is 0.4 to 1- GHz. Design is simulated in virtuoso simulator and simulation results are
measured. Noise figure is 1.6 to 3.0 dB for the UHF band and power dissipation of overall
circuit is 14.03mw at 1.8V supply.
KEYWORD: Cadence, MOS based Active Inductor, Feed forward path logic (FFP),
Low Noise Amplifier (LNA), Spectre Simulator.
1. INTRODUCTION
LNA is the first signal processing block in the receiving chain of any receiver thus its
noise figure and voltage gain have the most significant impact on the sensitivity level. Also
linearity and power consumption need to be considered in their design. Inductor used at gate
terminal of LNA with parallel resistance can be used for matching which having resonance
with the amplifier input capacitance results in greater noise figure more than 3 dB, this
structure is only used in narrow band application such as RF identification (RFID) [1][2].
Resistive feedback can also be used for input impedance matching with the noise cancellation
path introduced in may result in reduced noise figure but it suffers from high power
consumption and limited bandwidth [3] [4].
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The common gate/source circuit can provide real input impedance matching but in
both structure inductors is often an off-chip component because passive on chip inductors has
low quality factor as well as large die area and lack of tenability. Thus need of active inductor
is potentially generated. However the poor noise and linearity performance of active inductor
has limited their use at LNA input in replacing passive inductors [5-9].This design has used
active inductor as input matching circuit with feed forward path to noise cancellation. The
proposed LNA is fully on chip with sma area and having high voltage gain as well as low
noise figure and good linearity.
2. ACTIVE INDUCTOR USING MOS TECHNOLOGY
Fig. 1: Active Inductor structure and RLC model
The most common topology of active inductor is shown in figure 1 using two back to
back transconductances Gm1 and Gm2 (a gyrator) and a capacitor [10, 11]. The input
impedance of the circuit is inductive and given as
(1)
Where,
Zin = Equivalent Input Impedance.
Gm1 (combination of transistor M1 & M2) & Gm2 (of transistor M3) are back to back
transconductance of Gyrator structure The circuit realization of gyrator concept (Gm1andGm2)
is provided in [8][12][13] for which input impedance is inductive with high quality factor and
higher resonant frequency. The inductance of the above inductor can be calculated by hybrid-
π small signal model and calculated as:
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(2)
L= Inductance of Equivalent gyrator circuit.
C is the total capacitance seen at the gate.
gm1 & gm3 are transconductance of transistor M1 & M3 respectively.
Here M1 & M2 are assumed to be identical.
2.1 FEED FORWARD PATH Further for the improvement in noise performance of the above differential stage
authors have added Feed forward path (FFP) as shown in figure 2. Design schematic of
Active Inductor and proposed LNA are given in figure 3 and 4 respectively.
This enhances the output current by factor Af, where Af is the gain magnitude of FFP and
given as:
Af = gmf * Rf (3)
Fig. 2: Improving noise performance by feed forward path
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Fig. 3: Schematic of Active Inductor
Fig. 4: Schematic of proposed LNA
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3. SIMULATION RESULTS AND DISCUSSION
This work is carried out under the environment of cadence software. In this work
authors have implemented the design with 0.18 micro meter technology than used spectre RF
simulator for simulation. Simulation results are presented with applied voltage 1.8V and
operating range is 0.4 to 1- GHz. Figure 5 shows the simulation response of the gain versus
frequency and measured value is represented in figure with black block. Here authors have
done the SP analysis to characterize the proposed design. Analysed the values of (S11 & S22)
were -22.7149dB and -10.024 dB respectively shown in figure 6 and 7. Noise figure in
frequency range 0.4 to 1GHz has shown in figure 7. Table 1 gives the comparison of the
present results with the earlier work done in same field. From this table the authors have
observed that this reported work has improved the parameters as compared the earlier
published work with same technology. This work will be beneficial for young researchers,
designers and manufacturers for high quality design, research and manufacturing.
.
Fig. 5: Gain frequency Plot
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Fig. 6: Measured S11 of the LNA
Fig. 7: Measured S22 of the LNA
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Fig. 8: Noise Figure of the LNA
Table 1: comparison of the present results with the earlier work done
4. CONCLUSIONS
An LNA structure with improved active inductor implementation is presented. The
noise generated by the gyrator of the active inductor is reduced by the feed forward path at
the input. Thus improved noise performance of the LNA makes it suitable for the on chip
input impedance matching. In addition to noise cancellation the summation of signals at
output would reduce the second and third order harmonics caused by nonlinearity in FFP.
The measurements shows that the overall noise performance is enhanced keeping the
desirable gain and the overall dc power were low. Also the proposed LNA is capable of input
matching over the entire UHF band with optimization of best desired performance.
Ref. [9] [10] [11] [12] [13] This
work
Technology
0.18-µm
CMOS
0.18-µm
CMOS
0.18-µm
CMOS
0.18-µm
CMOS
0.18-µm
CMOS
0.18-µm
CMOS
Frequency(GHz) 0.47-0.86 0.05-0.86 0.048-1.2 0.05-0.9 0.47-1.0 0.40-1.0
Noise Figure 4.5 3.1-4.4 3 2.1-3.4 2.3-2.7 1.6-3.5
Gain (dB) 25 18-19.5 14 16.4 18-23.5 20.57
VDD (V) N/A 1.8 2.2 1.8 1.8 1.8
DC Power (mW) 16 35.6 34.8 14.4 15.3 14.03
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ACKNOWLEDGMENT
This work has been carried out in SMDP VLSI laboratory of the Electronics and Instrumentation
Engineering Department of Shri G. S. Institute of Technology and Science, Indore, India. This
SMDP VLSI project is funded by Ministry of Information and Communication Technology,
Government of India. Authors are thankful to the Ministry for the facilities provided under this
project.
REFRENCES
[1] B. Razavi, RF Microelectronics. Englewood Cliffs, NJ: Prentice-Hall, 1997.
[2] A. Safarian, A. Shameli, A. Rofougaran, M. Rofougaran, and F. De Flaviis, “RF
identification (RFID) reader front ends with active blocker rejection,” IEEE Trans.
Microw.Theory Tech., vol. 57, no. 5,pp. 1320–1329, May 2009.
[3] B. Perumana, J.-H. Zhan, S. Taylor, B. Carlton, and J. Laskar, “Resistive-feedback CMOS
low-noise amplifiers for multiband applications,”IEEE Trans. Microw. Theory Tech.,vol. 56,
no. 5, pp.1218–1225, May 2008.
[4] F. Bruccoleri, E. Klumperink, and B. Nauta, “Wide-band CMOS low noise amplifier
exploiting thermal noise canceling,” IEEE J. Solid-State Circuits, vol. 39, no. 2, pp. 275–
282, Feb. 2004.
[5] M. Reja, I. Filanovsky, and K. Moez, “A CMOS 2.0–11.2 GHz UWB LNA using active,
inductor circuit,” in IEEE Int. Symp. Circuits Syst.(ISCAS), May 2008, pp. 2266–2269.
[6] M. Nair, Y. Zheng, and Y. Lian, “1 V, 0.18 m-area and power efficient UWB LNA utilising
active inductors,” Electron. Lett., vol. 44, no. 19,pp. 1127–1129, Nov. 2008.
[7] A. Thanachayanont and A. Payne, “VHF CMOS integrated active inductor,”Electron. Let.,
vol. 32, no. 11, pp. 999–1000, May 1996.
[8] D. DiClemente and F. Yuan, “Current-mode phase-locked loops—A new architecture,”
IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 54 no. 4, pp. 303–307, April 2007.
[9] T. W. Kim and B. Kim, “A 13-dB IIP3 improved low-power CMOS RF programmable gain
amplifier using differential circuit transconductance linearization for various terrestrial
mobile D-TV applications,” IEEE J. Solid-State Circuits, vol. 41, no. 4, pp. 945–953, April
2006.
[10] D. Im, I. Nam, and K. Lee, “A CMOS active feedback balun-LNA with high IIP2 for
wideband digital TV receivers,” IEEE Trans. Microw. Theory Tech., vol. 58, no. 12,
pp.3566–3579, Dec. 2010.
[11] D. Im, I. Nam, H.-T. Kim, and K. Lee, “A wideband CMOS low noise amplifier employing
noise and IM2 distortion cancellation for a digital TV tuner,” IEEE J. Solid-State Circuits,
vol.44, no. 3, pp. 686–698, March 2009.
[12] Y.-H. Yu, Y.-S. Yang, and Y.-J. Chen, “A compact wideband CMOS low noise amplifier
with gain flatness enhancement,” IEEE J. Solid-State Circuits, vol. 45, no. 3, pp. 502–509,
March 2010.
[13] Mohsen Moezzi and M. Sharif Bakhtiar, “Wideband LNA Using Active Inductor with
Multiple Feed-Forward Noise Reduction Paths.” IEEE J. Trans. Microw. Theory Tech, vol
60, no.4, pp. 1069-1078, April 2012.
[14] Aswathy G Nair and Gopakumar M G, “Cs-Cmos: A Low-Noise Logic Family For Mixed
Signal Socs”, International Journal of Electronics and Communication Engineering &
Technology (IJECET), Volume 4, Issue 2, 2013, pp. 180 - 190, ISSN Print: 0976- 6464,
ISSN Online: 0976 –6472.