Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University 3rd Work Meeting of the CBM-MPD STS Consortium
Design and development of thin double side silicon microstrip sensors for CBM experiment
Feb 04, 2016
Design and development of thin double side silicon microstrip sensors for CBM experiment. Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University. 3rd Work Meeting of the CBM-MPD STS Consortium. 3rd Work Meeting of the CBM-MPD STS Consortium. Sensor Geometry. - PowerPoint PPT Presentation
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Design and development of thin double side silicon
microstrip sensors for CBM experiment
Mikhail MerkinSkobeltsyn Institute of Nuclear Physics
Moscow State University
3rd Work Meeting of the CBM-MPD STS Consortium
3rd Work Meeting of the CBM-MPD STS Consortium
Sensor Geometry
– According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity - 40 • 60 mm2
– Strip pitch for both sides - 58 μm– Stereoangle - ±7.5о
– Number of strips on both sides - 1024 – Number of readout chips for both sides -
8
3rd Work Meeting of the CBM-MPD STS Consortium
Sensor N-side Contact Pads
3rd Work Meeting of the CBM-MPD STS Consortium
N-side poly-Si resistors
3rd Work Meeting of the CBM-MPD STS Consortium
N-side p-stops configuration
3rd Work Meeting of the CBM-MPD STS Consortium
N-side Guard Rings
1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor P-side 1st and 2nd metal
3rd Work Meeting of the CBM-MPD STS Consortium
Sensor P-side 1st and 2nd metal details
3rd Work Meeting of the CBM-MPD STS Consortium
P-side Guard Rings
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor
3rd Work Meeting of the CBM-MPD STS Consortium
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor- p-side
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor – n-side
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor – n-side
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor – n-side
Results
•Number of masks:•N-side – 8•P-side – 9
•Estimated production time - 3 months + 1 month for masks production.
3rd Work Meeting of the CBM-MPD STS Consortium
Expected
• Full Depletion Voltage (FDV) - <50 V• Working voltage – 70 - 250 V• Dark current at 100 V – < 15 nА/см2
• AC capacitance - >10 pF/см• Capacitors breakdown voltage -
>170 V• Bias resistor value - 1.0 ± 0.4 MOhm• Number of bad strips - <0.5%/side
3rd Work Meeting of the CBM-MPD STS Consortium
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