DEPFET detectors for future colliders. Activities at IFIC, Valencia Terceras Jornadas sobre la Participación Española en los Futuros Aceleradores Lineales de Partículas Universitat de Barcelona C. Mariñas, IFIC, CSIC-UVEG Carlos Mariñas, IFIC, CSIC-UVEG
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DEPFET detectors for future colliders. Activities at IFIC, Valencia Terceras Jornadas sobre la Participación Española en los Futuros Aceleradores Lineales.
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C. Mariñas, IFIC, CSIC-UVEG
DEPFET detectors for future colliders. Activities at IFIC,
ValenciaTerceras Jornadas sobre la Participación Española en los Futuros
Aceleradores Lineales de Partículas
Universitat de Barcelona
Carlos Mariñas, IFIC, CSIC-UVEG
C. Mariñas, IFIC, CSIC-UVEG
Outlook
DEPFET: Basics
• General requirements for future colliders• DEPFET: Fundamentals
DEPFET activities at IFIC
• Characterization:• Matrices: PXD4/PXD5/PXD6 production• Single Pixel
• Test Beam• Data analysis
• ILC simulation (see M. Vos talk)• Thermal studies ILC/SuperBelle
• DEPFET thermal mock-up• Simulation
Conclusions
• Pixel detectors for future colliders• IFIC in the DEPFET Collaboration
Vertexing in future collidersC. Mariñas, IFIC, CSIC-UVEG
This requirements impose unprecedented constraints on the detector:• High granularity• Fast read-out• Low material budget• Low power consumption
Vertexing in future colliders requires excellent vertex reconstruction and efficient heavy quark flavour tagging using low momentum tracks
DEPFET Measurements made on realistic DEPFET prototypes have demonstrated that the concept is one of the principal candidates to meet these challenging requirements
C. Mariñas, IFIC, CSIC-UVEG
DEPFET principle
Each pixel is a p-channel FET on a completely depleted bulk
A deep n-implant creates a potential minimum for electrons under the gate (internal gate)
Signal electrons accumulate in the internal gate and modulate the transistor current (400pA/e-)
Accumulated charge can be removed by a clear contact
Fully depleted• Large signal• Fast signal collection
f(x) = 4.24932494364119 x + 0.492739776470649f(x) = NaN x + NaN
Cu. 500 microns.
Linear (Cu. 500 microns.)
TPG: k a a-1=4,3 W·mm2/K
Cu: k a a-1=1,1 W·mm2/K
Al: k a a-1=0,2W·mm2/K
DT n
orm
aliz
ed (
K/m
m2)
Power (W)
New materials
C. Mariñas, IFIC, CSIC-UVEG
Thermal simulation Model implemented in
SolidWorks for future mechanical studies
ANSYS studies calibrated with real data
C. Mariñas, IFIC, CSIC-UVEG
A couple of movies…
Switching mechanism is introduced
Influence of air and liquid cooling studies
C. Mariñas, IFIC, CSIC-UVEG
Conclusions
Vertexing in Future Colliders◦ Very hard conditions
Radiation (10MRad for SuperBelle) Background Reduced material budget Unprecedented granularity Power consumption and heat dissipation
◦ Improvement of the detector’s performance is needed
New generation of pixel detectors try to cope with this requirements
DEPFET: One of the most promising technologies for vertexing and tracking
C. Mariñas, IFIC, CSIC-UVEG
Conclusions: DEPFET in Valencia
Matrix characterization◦ 2 different generations characterized◦ Full electrical optimization◦ Calibration◦ Charge collection uniformity◦ Working on Single Pixel set-up
Test Beam◦ Optimization of DUT◦ Instalation and alignment of the telescope◦ Data analysis
Thermal studies◦ DEPFET thermal mock-up◦ Study of new materials for better cooling◦ Influence of air/liquid cooling◦ Simulation
CMOS sensors: MAPS/CAPS•Only small chips possible•Dead material in periphery
Silicon On Insulator (3D integration)•Thick depleted sensor (large signal, fast charge collection)•Only small chips possible•Back-gate effect (depletion voltage couples to FET gate)
C. Mariñas, IFIC, CSIC-UVEG
Double pixel structure
C. Mariñas, IFIC, CSIC-UVEG
Gain and noise
•Ba-133 (30keV g-ray) → 310.4 ADC Units
•Cd-109 (22keV g-ray) → 209.9 ADC Units
E (keV)
ADU
22 30
310.4
209.9
FITy=a+bx
Slope=Gain
b=12.5 ADC/keV
ekeV
he
ADC
keVADC 330
106.3
1
5.12
115
3
Noise Gain Energy to
create e-h
C. Mariñas, IFIC, CSIC-UVEG
S/N for a MIP
keVpair
eVpairs 80
1
62.322300
keVm
keVm 127285
80450
25.4)133(30
)(127
BakeV
MIPkeV
1.- ATLAS supposition: 1 MIP→22300 pairs e-h in 285μm of Si
2.- Our DEPFET has 450μm of Si
3.- The scale factor between Ba-133 30keV g and a MIP is:
)(8625.433.20)133(33.20 MIPNSBaNS
4.- The S/N of 30keV Ba-133 g ray scaled to a MIP: