1 3 TAB D²PAK 2 D(2, TAB) G(1) S(3) AM01475V1 Features Order code V DS R DS(on) max. I D STB22N60M6 600 V 230 mΩ 15 A • Reduced switching losses • Lower R DS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R DS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STB22N60M6 Product summary Order code STB22N60M6 Marking 22N60M6 Package D 2 PAK Packing Tape and reel N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a D 2 PAK package STB22N60M6 Datasheet DS12827 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com
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Datasheet - STB22N60M6 - N-channel 600 V, 196 mΩ typ., 15 ...Qrr Reverse recovery charge - 1.99 µC IRRM Reverse recovery current - 18.3 A trr Reverse recovery time ISD = 15 A, di/dt
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Transcript
13
TAB
D²PAK
2
D(2, TAB)
G(1)
S(3)AM01475V1
FeaturesOrder code VDS RDS(on) max. ID
STB22N60M6 600 V 230 mΩ 15 A
• Reduced switching losses• Lower RDS(on) per area vs previous generation• Low gate input resistance• 100% avalanche tested• Zener-protected
DescriptionThe new MDmesh™ M6 technology incorporates the most recent advancements tothe well-known and consolidated MDmesh family of SJ MOSFETs.STMicroelectronics builds on the previous generation of MDmesh devices through itsnew M6 technology, which combines excellent RDS(on) per area improvement withone of the most effective switching behaviors available, as well as a user-friendlyexperience for maximum end-application efficiency.
Product status link
STB22N60M6
Product summary
Order code STB22N60M6
Marking 22N60M6
Package D2PAK
Packing Tape and reel
N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a D2PAK package
STB22N60M6
Datasheet
DS12827 - Rev 1 - November 2018For further information contact your local STMicroelectronics sales office.
Figure 13. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200μF VDD
3.3μF+
pulse width
VGS
Figure 14. Test circuit for gate charge behavior
AM01469v10
47 kΩ
2.7 kΩ
1 kΩ
IG= CONST100 Ω D.U.T.
+pulse width
VGS
2200μF
VG
VDD
RL
Figure 15. Test circuit for inductive load switching anddiode recovery times
AM01470v1
AD
D.U.T.S
B
G
25 Ω
A A
B B
RG
GD
S
100 µH
µF3.3 1000
µF VDD
D.U.T.
+
_
+
fastdiode
Figure 16. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3µF
2200µF
Figure 17. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 18. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STB22N60M6Test circuits
DS12827 - Rev 1 page 7/16
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.