TAB 7 1 H 2 PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code V DS R DS(on) typ. I D SCTH100N65G2-7AG 650 V 20 mΩ 95 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Traction inverters • DC-DC converters • OBC Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2 nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. Product status link SCTH100N65G2-7AG Product summary Order code SCTH100N65G2-7AG Marking 100N65AG Package H²PAK-7 Packing Tape and reel Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., T J = 25 °C) in an H 2 PAK-7 package SCTH100N65G2-7AG Datasheet DS12773 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com
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Transcript
TAB
7
1
H2PAK-7
Drain (TAB)
Gate (1)
Driversource (2)
Powersource (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
FeaturesOrder code VDS RDS(on) typ. ID
SCTH100N65G2-7AG 650 V 20 mΩ 95 A
• AEC-Q101 qualified • Very fast and robust intrinsic body diode• Low capacitance
DescriptionThis silicon carbide Power MOSFET device has been developed using ST’sadvanced and innovative 2nd generation SiC MOSFET technology. The devicefeatures remarkably low on-resistance per unit area and very good switchingperformance.
Product status link
SCTH100N65G2-7AG
Product summary
Order code SCTH100N65G2-7AG
Marking 100N65AG
Package H²PAK-7
Packing Tape and reel
Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
SCTH100N65G2-7AG
Datasheet
DS12773 - Rev 1 - November 2018For further information contact your local STMicroelectronics sales office.
Figure 17. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200μF VDD
3.3μF+
pulse width
VGS
Figure 18. Test circuit for gate charge behavior
AM01469v1
47 kΩ1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST100 Ω
100 nF
D.U.T.
+pulse width
VGS
2200μF
VG
VDD
Figure 19. Test circuit for inductive load switching anddiode recovery times
AM01470v1
AD
D.U.T.S
B
G
25 Ω
A A
B B
RG
GD
S
100 µH
µF3.3 1000
µF VDD
D.U.T.
+
_
+
fastdiode
Figure 20. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3µF
2200µF
Figure 21. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 22. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
SCTH100N65G2-7AGTest circuits
DS12773 - Rev 1 page 8/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.