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Zenghai Li Oct 13, 2009 Dark Current Simulation for the T18vg2.6 Structure Zenghai Li , Arno Candel, Lixin Ge SLAC National Accelerator Laboratory CLIC Workshop, Oct 14, 2009, CERN * Work supported by U.S. DOE ASCR, BES & HEP Divisions under contract DE-AC02-76SF00515
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Dark Current Simulation for the T18vg2.6 Structure

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Dark Current Simulation for the T18vg2.6 Structure. Zenghai Li , Arno Candel, Lixin Ge SLAC National Accelerator Laboratory CLIC Workshop, Oct 14, 2009, CERN. * Work supported by U.S. DOE ASCR, BES & HEP Divisions under contract DE-AC02-76SF00515. Outline. T18vg2.6 Dark Current Simulation - PowerPoint PPT Presentation
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Page 1: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Dark Current Simulation for the T18vg2.6 Structure

Zenghai Li, Arno Candel, Lixin Ge

SLAC National Accelerator Laboratory

CLIC Workshop, Oct 14, 2009, CERN

* Work supported by U.S. DOE ASCR, BES & HEP Divisions under contract DE-AC02-76SF00515

Page 2: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Outline

T18vg2.6 Dark Current Simulation

Dark current spectrum vs measurement

Field emitter modeling

- PIC simulation of emitter emission (Arno’s talk)

- Emitter heating due to emission current

- Emitter heating due to RF field enhancement

Page 3: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

T18vg2.6 Structure

• Structure being tested at KEK and SLAC• Simulation Code: (ACE3P)

• S3P - S-Parameter & Fields• Track3P - Particle Tracking

Page 4: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

T18 Structure Fields

Higher B field at the output end, not as significant as E field

Es Bs

Structure tapered: higher E fields at output end

RF fields obtained using S3P with surface lossS11=0.014; S22=0.032; S12=0.82

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30Z (m)

B_

su

rfa

ce

0.0E+00

5.0E+07

1.0E+08

1.5E+08

2.0E+08

2.5E+08

3.0E+08

3.5E+08

4.0E+08

-0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30z (m)

E_

su

rfa

ce

Page 5: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Dark Current Simulation Using Track3P

Dark Current Simulation• Fowler-Nordheim field emission

• Secondary Electrons

• Analyze accumulated effects of DC current & power

Ee

EEJ

5.191053.6252.46

1054.1),(

Copper SEY

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0 1000 2000 3000 4000incident electron energy [eV]

delta

Page 6: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Dark Current Emitter Simulation

• Intercepted electrons - dark current heating on surface– Deposit energy into the wall results in surface heating

• Captured electrons: energy spectrum– Emitter (disk) location - energy– Emitter density on disk – amplitude

• Heating on dark current emitter– Due to emission current– Due to RF field enhancement on emitter

Emitted from iris #6

Page 7: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Dark Current vs RF Heating

Dark Current Heating• Impact concentrated in high E region

around iris • Impact energy could be as high as a few

MeV• Depth of energy deposit ~ 1-2 hundred

microns • Significantly higher heating power at

output end

RF Pulse Heating• High on outer wall where E field is “low”. • Depth ~ skin depth• Temperature rise is around 250C at

100MV/m, 200ns pulse length• At Eacc=80 MV/m; (Hs/Ea~0.004),

Power_max=1.4 GW/m2

Dark Current Heating distribution

RF Heating distribution

Assumed emitters uniformly distributed. In reality, most likely clusters of emitters, result in local hot spots.

Page 8: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

High Power Test Data - Breakdown Distribution

0 5 10 15 200

5

10

15

20

Cell No.

Bre

akd

ow

n E

ven

ts: p

erc

en

t

1~201 Breakdown Events

y(x) = a x^na = 0.070631n = 1.8328R = 0.81556 (lin)

0 5 10 15 200

5

10

15

20

Cell No.

Bre

akd

ow

n E

ven

ts: p

erc

en

t

201~400 Breakdown Events

y(x) = a x^na = 0.72984n = 0.91333R = 0.90839 (lin)

0 5 10 15 200

5

10

15

20401~600 Breakdown Events

Cell No.

Bre

akd

ow

n E

ven

ts: p

erc

en

t y(x) = a x^na = 0.21073n = 1.4129R = 0.88267 (lin)

F. Wang

• Breakdown rate significantly higher at the output end

• Good correlation with field enhancement and dark current heating at the output end

KEK, Higo, Doebert

Red: real cell timingBlue: linear cell timing

Page 9: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Dark Current Measurement & Simulation

Schematic of KEK high power test and dark current measurement

GVGVPM PMAM

Sl i t

FC

E

E

I P

Louni nel oad

Otsukal oad

DC

I PH

VAC

I nsulVAC

I PDC H

H

Vari an I P

187

KX03 425

FC

I P

Load

Vari anI P

Q-mass

WC WCFC

FC

VAC DC

230

Faraday Cup to measure dark current

dE/E filter

slitSimulation “schematics”

Dipole (dP/P)

Page 10: Dark Current Simulation for the T18vg2.6  Structure

T18_VG2.4_Disk_#2Dark current spectra measured 18 June 2009

0

0.2

0.4

0.6

0.8

1

1.2

0 5 10 15

T18_VG2.4_Disk #2Spectrum_vs_Width at 64MW

I_slit_peak [microA] 64MW, 252ns

I_slit_peak [microA] 113ns, 64MW

I_slit_peak [microA] 64MW, 331ns

I_slit peak [microA]

pc (MeV/c)

090618

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 5 10 15

T18_VG2.4_Disk #2Spectrum_vs_power at 252ns

I_slit_peak [microA] 64MW, 252ns

I_slit_peak [microA] 55MW, 252ns

I_slit_peak [microA] 70MW, 252ns

I_slit peak [microA]

pc (MeV/c)

090618

Dependence on power Dependence on width

Higo 090703Measurement Data at KEK (Higo)

Page 11: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Dark Current Spectrum Comparison

Measured dark current energy spectrum at downstream

SimulationEacc=97MV/m.dE/E=0.1, zbp=2.9m

Differences?Measured dark current spectrum details would depend on the number of emitters on the disks

Page 12: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Heating Due to Dark Current Impact ?

Disk 10

Disk 17

• Dark Current Collimation By Disk Iris. • Some electrons have very high impact energies.

Page 13: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Electron Impact Energy

Emitted from disk 3

Emitted from disk 17

Emitted from disk 10

Page 14: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Impact Energy vs Emission Site Field

E field determined amount of emission

Page 15: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Heating Due to Dark Current Impact• Field emission current density based on FN can be significant

- with beta=50, Eacc=100 MV/m,- Jpeak ~1013 A/m2

• Need to study effects of individual emitters - PIC simulation of initial emitter phase space

Emitter - micron or less in size

• MeV energy electrons• Larger spot and deep depth

localized heating may not be as significant

• Current may be much higher when breakdown is being developed? site of future emitter?

Sharon Lee ICSE2006

Colored by momentum

Page 16: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

“Modeling” Of Field Emitters

(C. Adolphsen)

G. A. Mesyats /P. Wilson

cone double tipasperities

• Calculate field enhancement beta of emitter protrusion• PIC simulation: FN + self consistent space charge effect

– Using a emitter shape with right beta vale (50 as measured)– Initial emitter phase space – impact heating distribution– Emission current - emission heating of emitter

Page 17: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Single Tip: Beta vs Shape

Field contour plot

Field enhancement beta vs tip elongate ratio and tip length

Page 18: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Double Tip: Beta vs Shape

base_height Base_r height2 base_r2 dztip beta6 3 5 1 2 236 3 5 0.5 2 54 5 2 5 1 2 23 5 4 5 1 2 215 4 5 1 4 275 4 5 0.5 4 52

Single-tip base_height base_r Beta

5 0.5 385 0.87 225 1 175 1.5 115 2 85 4 4

Page 19: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Field Emission Heating

0 50 100 150 2000

5 1012

1 1013

1.5 1013

1.206 1013

0.127

j E sin phi

180

17010 phi

• Current is pulled out in ~ ± 40deg rf phase (FN model)• Field emission current density

– Jpeak ~1013 A/m2 with beta=50, Eacc=100 MV/m

– Need PIC to include space charge effects (Arno’s talk)

• This current produce heating on emitter

Page 20: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Emitter Heating Due to RF

• Emitter protrusion can produce significant surface magnetic field enhancement

• May lead to higher local heating on emitter tip due to RF magnetic field

Page 21: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Heating On Emitter

Both RF and Emission (field+thermal) contribute to emitter heating

– Larger cell iris – higher RF heating– Smaller iris (but high E) – higher

emission heating In high E region, strong E force pull

the tip outward– may result in development of

“sharp” emitters over time– lead to breakdown when dark

current and dark current heating exceed threshold

Page 22: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

NLC H60VG3S17 Structure

H60VG3S17 Gradient

0.0

20.0

40.0

60.0

80.0

100.0

120.0

140.0

160.0

180.0

0 20 40 60Cell number

G, E

s (G

_a

ve=

70

MV

/m)

H60VG3A17 DS Pulse Heating

0

5

10

15

20

25

0 20 40 60Cell number

dT

(d

eg

C)

Surface Field RF Heating

Peak Surface Field & Heating• Surface E field and RF heating higher at the output end• Most breakdowns in the front

Page 23: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

NLC H60VG3S17 Structure

• Surface field along disk contour• Disk 8 and 50 comparison (same acceleration gradient)

Page 24: Dark Current Simulation for the T18vg2.6  Structure

Zenghai Li Oct 13, 2009

Summary

Progress being made in simulating CLIC T18 structures using Track3P. Dark current spectrum compared with measurement – which may provide information of field emission conditions of disks

Both RF and field emission contribute to emitter heating– High temperature plus strong E force pulling (of emitter

tip) could lead to development of “sharp” emitters over time, may eventually reach breakdown threshold

Self consistent (space charge) emitter emission being performed using PIC to study emission heating

Surface field enhancement due emitter protrusion being calculated using Omega3P to study RF heating

Detailed of modeling of field emitters in progress