Current status of the silicon strip Current status of the silicon strip sensor development in Korea sensor development in Korea 1. 1. Introduction Introduction 2. 2. Silicon Inner tracker configuration for IL Silicon Inner tracker configuration for IL C C 3. 3. Silicon strip sensors development Silicon strip sensors development 4. 4. Beam test and radiation damage test Beam test and radiation damage test 5. 5. Prospect Prospect H.J.Kim (KyungPook National U.) H.J.Kim (KyungPook National U.) For Korean silicon tracker collabortion For Korean silicon tracker collabortion ACFA9, Feb. 6/2007 ACFA9, Feb. 6/2007
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Current status of the silicon strip sensor development in Korea 1.Introduction 2.Silicon Inner tracker configuration for ILC 3.Silicon strip sensors development.
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Current status of the silicon strip Current status of the silicon strip sensor development in Korea sensor development in Korea
1.1. IntroductionIntroduction2.2. Silicon Inner tracker configuration for ILCSilicon Inner tracker configuration for ILC3.3. Silicon strip sensors developmentSilicon strip sensors development4.4. Beam test and radiation damage testBeam test and radiation damage test5.5. ProspectProspect
H.J.Kim (KyungPook National U.) H.J.Kim (KyungPook National U.) For Korean silicon tracker collabortionFor Korean silicon tracker collabortion
Electrical characteristic of each channel in one of the AC-SSD
AGFA9, H.J.Kim
AC coupling capacitanceAC coupling capacitance• Coupling capacitance (CCoupling capacitance (Cc c ))
– Target value : AC1 214pF / AC2 322pFTarget value : AC1 214pF / AC2 322pF– Measured value : AC1 177pF / AC2 257pFMeasured value : AC1 177pF / AC2 257pF
– Differences are due to different permittivity depending on SiODifferences are due to different permittivity depending on SiO22 layer layer
– And due to the limitation of SiOAnd due to the limitation of SiO22 layer thickness in the our fabrication layer thickness in the our fabrication process.process.
Measured capacitances of the AC SSDProbing for coupling capacitance measurement
Target value : 214 pF
Target value : 322pF
AGFA9, H.J.Kim
Bias resistance of 0101AC1
0
5
10
15
20
25
30
0 20 40 60 80 100 120voltage(V)
resi
stan
ce(o
hm)
ch1 ch2 ch3 ch32 ch33 ch62 ch63 ch64
Biasing structure Biasing structure
• Bias resistor structureBias resistor structure– Purpose and advantage :Purpose and advantage :
• Isolation of each stripIsolation of each strip• Automatic biasing of total strip Automatic biasing of total strip • total leakage current is total leakage current is
measured easily with only one measured easily with only one connection on each surfaceconnection on each surface
–
Bias-ring Pad
DC Pad
Probing for Biasing resistance measurement
• Result
The Bias resistance of the AC-coupled SSSD
R1 R2 R3 R4
• Test patterns
WidthLength
RR s
Resistances of various test patterns
Target value : 25 MΩlength(μm) width(μm) Rs(kΩ) expected(MΩ) measurement(MΩ)
5 inch5 inch double/single-sideddouble/single-sided single-sidedsingle-sided
6 inch6 inch single-sidedsingle-sided single-sided (in single-sided (in progress)progress)
8 inch8 inch thickness ( 725 um, can be thinned ~500 thickness ( 725 um, can be thinned ~500 um)um)
• yieldsyields
• fabrication linefabrication line
5-inch double-sided process
Type 1
Type 2
Various patterns
AC TRK1P+width:200umAl wdth:220um
AC TRK2P+width:300umAl wdth:320um
DC TRK1P+width:400umAl wdth:420um
DC TRK2P+width:600umAl wdth:620um
Poly-Si Resists
PIN diode
Test patterns
AC typePitch:500umChannel:64
DC typePitch:1000umChannel:32
Test patterns
Test patterns
AC1
AC2 DC2
DC1
Test patterns
AC 256ch
AC512ch
AC256ch
DC512ch
DC32ch
AC64ch
6-inch single-sided process
5-inch single-sided process
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Radioactive source test block Radioactive source test block diagramdiagram
Light-tight box
Pb Pb
Trigger Sensor
Sensor90Sr source
Pre-amp. Amp.Discriminator
FADC4VA
Pre-amp. Amp.
DSO
PC
Xilinx
ADC
Trigger
Photodiode sensor of HPK
512ch Double-sided Silicon Strip Sensor
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Source Test Source Test Measurement ResultMeasurement Result
• Signal-to-noise ratio is measured to be 25.0Signal-to-noise ratio is measured to be 25.0
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Beamtest & Radiation damage testBeamtest & Radiation damage test• Korea Institute of Radiological And Medical ScienceKorea Institute of Radiological And Medical Science• Beam energy from 35 ~ 45MeVBeam energy from 35 ~ 45MeV• Beam current from 0.2nA ~ few micro ABeam current from 0.2nA ~ few micro A
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Front-end electronics for SSD (DC Front-end electronics for SSD (DC type)type)
VA Interface boardPower supply to VA and silicon strip sensorLogic converter for interfacing between VA and Xilinx
FADC4VA boardXilinx chip on Flash ADC4VA board makes a control logic and distributes it to VA and ADC chip converts analog signal to digital signal.
Digital signal from ADC is sent to PC through USB2 bus for data analysis
VA Hybrid boardThis VA1 chip has 128 channels, and a low noise charge sensitive preamp, a shaper, and a sample and hold for each channel. Analog signals are serially clocked out by control via a shift register.
SSDVA chip
OpAmp.
hybrid
VA interface
FADC4VA
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Block Diagram of Experimental Set-up for Beam TestBlock Diagram of Experimental Set-up for Beam Test
PMTVA Hybrid
VA Interface
FADC4VA
Amplifier
Discriminator
Gate & Delaygenerator
HV
PCEthernet Hub
DSO
Collimator (Pb)
Liquid Scintillator
Collimator (Al)
Proton Beam Pipe
TriggerControl
PC(To outside)
Light-tight box
thin Cu windows
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Experimental Set-up Experimental Set-up
Al light-tight box
Liquid Scintillator and PMT for trigger
Silicon strip sensor
VA1_prime2.3
collimator
USB2
AGFA9, H.J.Kim
Test resultsTest results
This problem is well understood : random trigger due to misalignment
Simulated absorbed energy spectrum of 37.5 MeV proton impinging onto 380 um silicon sensor
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Results of beam test : S/NResults of beam test : S/N
• The SNR is defined as the ratio of the most probable energy deposit in the The SNR is defined as the ratio of the most probable energy deposit in the sensor to the noise RMS.sensor to the noise RMS.
• The estimated SNRs of channels 0 ~ 22 have large errors because of only fThe estimated SNRs of channels 0 ~ 22 have large errors because of only few properly triggered events. Channels 23 ~ 31 show good SNRs of 164 ~ ew properly triggered events. Channels 23 ~ 31 show good SNRs of 164 ~ 67 for as 37.5 MeV proton, which corresponds to be 67 for as 37.5 MeV proton, which corresponds to be 16.4 ~ 6.7 for a Mini16.4 ~ 6.7 for a Minimum Ionizing Particle.mum Ionizing Particle.
Radiation damage test• Irradiation
45 MeV proton beam from MC-50 cyclotron at KIRAMS fluence normalization based on NIEL scaling hypothesis
– for different particles– for different energy ranges
• The standard for particle fluence is to normalize all damage to the equivalent damage caused by 1 MeV neutron.
toteq κ is “hardness factor” = D(E)/Dneutron(1MeV)
Energy dependence on NIEL in silicon for different particle types
and energies
Radiation damage test results
Leakage currents as a function of bias voltage
Φeq=3.0×108 Φeq=1.6×109
Φeq=1.6×1010 Φeq=1.6×1011
• Increase in leakage currents
AGFA9, H.J.Kim
Radiation damage effectsRadiation damage effects
Fluence dependence of leakage current Fluence dependence of leakage current Fluence independence of damage parameterFluence independence of damage parameter
•current increase is strictly proportional to fluence•Damage induced bulk
•current related damage rate α is expected to be independent of irradiation•
• α can be used to monitor the particle fluence
eqVI /
ROSE data
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More Beam Test at KIRAMS on 2007 :analysis ongoingMore Beam Test at KIRAMS on 2007 :analysis ongoing
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Beam Test at CERN on 2006 : analysis on goingBeam Test at CERN on 2006 : analysis on going
150 GeV electron beam
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Summary and ProspectSummary and Prospect
• Double sided silicon sensor, DC-type Double sided silicon sensor, DC-type single sided silicon sensor and AC-single sided silicon sensor and AC-type single sided silicon sensor was type single sided silicon sensor was successfully produced and tested. successfully produced and tested.
• Beam test and radiation damage Beam test and radiation damage shows that developed sensor can be shows that developed sensor can be used for the ILC environment.used for the ILC environment.
• Radioactive source test and beam test Radioactive source test and beam test showed that S/N ratio is good enough showed that S/N ratio is good enough for the ILC environment.for the ILC environment.
• Electronics R&D is under progress.Electronics R&D is under progress.