Features • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune • Application-specific gate drive range: Motor Drive: 12 V to 20 V (IRS2127/IRS2128) Automotive: 9 V to 20 V (IRS21271/IRS21281) • Undervoltage lockout • 3.3 V, 5 V, and 15 V input logic compatible • FAULT lead indicates shutdown has occured • Output in phase with input (IRS2127/IRS21271) • Output out of phase with input (IRS2128/IRS21281) CURRENT SENSING SINGLE CHANNEL DRIVER V OFFSET 600 V max. I O +/- 200 mA / 420 mA V OUT 12 V - 20V 9 V - 20 V (IRS2127/IR2128) (IRS21271/IR21281) V CSth 250 mV or 1.8 V t on/off (typ.) 150 ns & 150 ns Typical Connection www.irf.com 1 Packages IRS2127/IRS21271 IRS2128/IRS21281 8-Lead PDIP 8-Lead SOIC IRS212(7, 71, 8, 81)(S)PbF Data Sheet No. PD60299 Description The IRS2127/IRS2128/IRS21271/IRS21281 are high voltage, high speed power MOSFET and IGBT drivers. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construc- tion. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3 V. The protec- tion circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output Product Summary V CC V B CS HO V S COM IN FAULT V CC IN FAULT V CC V B CS HO V S COM IN FAULT V CC IN FAULT (Refer to Lead Assignments for correct pin configuration). These diagrams show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating chan- nel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V. • RoHS compliant
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CURRENT SENSING SINGLE CHANNEL DRIVER · IRS212(7, 71, 8, 81)(S)PbF 2 Symbol Definition Min. Max. Units VB High-side floating supply voltage -0.3 625 VS High-side floating offset
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Features• Floating channel designed for bootstrap operation
Fully operational to +600 VTolerant to negative transient voltage dV/dt immune
• Application-specific gate drive range:Motor Drive: 12 V to 20 V (IRS2127/IRS2128)Automotive: 9 V to 20 V (IRS21271/IRS21281)
• Undervoltage lockout• 3.3 V, 5 V, and 15 V input logic compatible• FAULT lead indicates shutdown has occured• Output in phase with input (IRS2127/IRS21271)• Output out of phase with input (IRS2128/IRS21281)
CURRENT SENSING SINGLE CHANNEL DRIVER
VOFFSET 600 V max.
IO+/- 200 mA / 420 mA
VOUT 12 V - 20V 9 V - 20 V (IRS2127/IR2128) (IRS21271/IR21281)
VCSth 250 mV or 1.8 V
t on/off (typ.) 150 ns & 150 ns
Typical Connection
www.irf.com 1
Packages
IRS2127/IRS21271
IRS2128/IRS21281
8-Lead PDIP 8-Lead SOIC
IRS212(7, 71, 8, 81)(S)PbF
Data Sheet No. PD60299
DescriptionThe IRS2127/IRS2128/IRS21271/IRS21281 arehigh voltage, high speed power MOSFET and IGBTdrivers. Proprietary HVIC and latch immune CMOStechnologies enable ruggedized monolithic construc-tion. The logic input is compatible with standardCMOS or LSTTL outputs, down to 3.3 V. The protec-tion circuity detects over-current in the driven powertransistor and terminates the gate drive voltage. Anopen drain FAULT signal is provided to indicate thatan over-current shutdown has occurred. The output
Product Summary
VCC V B
CS
HO
V SCOM
IN
FAULT
V CC
IN
FAULT
VCC V B
CS
HO
V SCOM
IN
FAULT
V CC
IN
FAULT
(Refer to Lead Assignments for correct pin configuration).These diagrams show electrical connections only. Pleaserefer to our Application Notes and DesignTips for propercircuit board layout.
driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating chan-nel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration whichoperates up to 600 V.
Symbol Definition Min. Max. UnitsVB High-side floating supply voltage -0.3 625
VS High-side floating offset voltage VB - 25 VB + 0.3
VHO High-side floating output voltage VS - 0.3 VB + 0.3
VCC Logic supply voltage -0.3 25 V
VIN Logic input voltage -0.3 VCC + 0.3
VFLT FAULT output voltage -0.3 VCC + 0.3
VCS Current sense voltage VS - 0.3 VB + 0.3
dVs/dt Allowable offset supply voltage transient — 50 V/ns
PD Package power dissipation @ TA ≤ +25 °C8-Lead DIP — 1.0
8-Lead SOIC — 0.625
RthJA Thermal resistance, junction to ambient8-Lead DIP — 125
8-Lead SOIC — 200
TJ Junction temperature — 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) — 300
Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measuredunder board mounted and still air conditions.
Symbol Definition Min. Max. Units
VB High-side floating supply voltage (IRS2127/IRS2128) VS + 12 VS + 20
(IRS21271/IRS21281) VS + 9 VS + 20
VS High-side floating offset voltage Note 1 600
VHO High-side floating output voltage VS VB
VCC Logic supply voltage 10 20
VIN Logic input voltage 0 VCC
VFLT FAULT output voltage 0 VCC
VCS Current sense signal voltage VS VS + 5
TA Ambient temperature -40 125 °C
Note 1: Logic operational for VS of -5 V to +600 V. Logic state held for VS of -5 V to -VBS. (Please refer to the Design TipDT97-3 for more details).
Recommended Operating ConditionsThe input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within therecommended conditions. The VS offset rating is tested with all supplies biased at 15 V differential.
Output high short circuit pulsed current 200 290 —
VO = 0 V, V IN = 5 VPW ≤ 10 µs
IO-
Output low short circuit pulsed current 420 600 —
VO = 15 V, V IN = 0 VPW ≤ 10 µs
Ron,FLT
FAULT - low on resistance — 125 — Ω
Symbol Definition Min. Typ. Max. Units Test Conditionston Turn-on propagation delay — 150 200 VS = 0 V
toff Turn-off propagation delay — 150 200 VS = 600 V
tr Turn-on rise time — 80 130
tf Turn-off fall time — 40 65 ns
tbl Start-up blanking time 550 750 950
tcs CS shutdown propagation delay — 65 360
tflt CS to FAULT pull-up propagation delay — 270 510
Dynamic Electrical CharacteristicsVBIAS (VCC, VBS) = 15 V, CL = 1000 pF and TA = 25 °C unless otherwise specified. The dynamic electrical characteristicsare measured using the test circuit shown in Fig. 3.
Static Electrical CharacteristicsVBIAS (VCC, VBS) = 15 V and TA = 25 °C unless otherwise specified. The VIN, VTH, and IIN parameters are referenced toCOM. The VO and IO parameters are referenced to VS.
IN Logic input for gate driver output (HO), in phase with HO (IRS2127/IRS21271)out of phase with HO (IRS2128/IRS21281)Indicates over-current shutdown has occurred, negative logic
COM Logic ground VB High-side floating supply HO High-side gate drive output VS High-side floating supply return CS Current sense input to current sense comparator
Lead Assignments
8 Lead PDIP 8 Lead SOICIRS2127/IRS21271 IRS2127S/IRS21271S
FAULT
8 Lead PDIP 8 Lead SOICIRS2128/IRS21281 IRS2128S/IRS21281S
NOTES:1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.2. CONTROLLING DIMENSION: MILLIMETER3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
7
K x 45°
8X L 8X c
y
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050] 8X 1.78 [.070]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.