V GS - Gate-to-Source Voltage (V) R DS(on) - On-State Resistance (m:) 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 D007 T C = 25°C, I D = 8 A T C = 125°C, I D = 8 A Q g - Gate Charge (nC) V GS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 D004 I D = 8 A, V DS = 15 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17579Q3A SLPS527 – SEPTEMBER 2014 CSD17579Q3A 30 V N-Channel NexFET™ Power MOSFETs 1 Features Product Summary 1• Low Q g and Q gd T A = 25°C TYPICAL VALUE UNIT • Low R DS(on) V DS Drain-to-Source Voltage 30 V • Low Thermal Resistance Q g Gate Charge Total (4.5 V) 5.3 nC Q gd Gate Charge Gate-to-Drain 1.2 nC • Avalanche Rated V GS = 4.5 V 11.8 mΩ • Pb-Free R DS(on) Drain-to-Source On-Resistance V GS = 10 V 8.7 mΩ • RoHS Compliant V GS(th) Threshold Voltage 1.5 V • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package . Ordering Information (1) 2 Applications Device Media Qty Package Ship CSD17579Q3A 13-Inch Reel 2500 • Point-of-Load Synchronous Buck Converter for SON 3.3 × 3.3 mm Tape and Plastic Package Reel CSD17579Q3AT 7-Inch Reel 250 Applications in Networking, Telecom, and Computing Systems (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for Control FET Applications Absolute Maximum Ratings 3 Description T A = 25°C VALUE UNIT This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm V DS Drain-to-Source Voltage 30 V NexFET™ power MOSFET is designed to minimize V GS Gate-to-Source Voltage ±20 V losses in power conversion applications. Continuous Drain Current (Package limited) 20 Top View Continuous Drain Current (Silicon limited), I D 39 A T C = 25°C Continuous Drain Current (1) 11 I DM Pulsed Drain Current (2) 106 A Power Dissipation (1) 3.2 P D W Power Dissipation, T C = 25°C 29 T J , Operating Junction and –55 to 150 °C T stg Storage Temperature Range Avalanche Energy, single pulse E AS 14 mJ I D = 17 A, L = 0.1 mH, R G = 25 Ω (1) Typical R θJA = 50°C/W on a 1-inch 2 , 2-oz. Cu pad on a 0.06- . inch thick FR4 PCB. . (2) Max R θJC = 5.4 °C/W, pulse duration ≤100 μs, duty cycle ≤1% R DS(on) vs V GS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD17579Q3A 30 V N-Channel NexFET Power MOSFET · Device Media Qty Package Ship • Point-of-Load Synchronous Buck Converter for CSD17579Q3A 13-Inch Reel 2500 SON 3.3 × 3.3 mm Tape
VGS(th) Threshold Voltage 1.5 V• Halogen Free• SON 3.3 mm × 3.3 mm Plastic Package .
2 Applications Device Media Qty Package Ship
CSD17579Q3A 13-Inch Reel 2500• Point-of-Load Synchronous Buck Converter for SON 3.3 × 3.3 mm Tape andPlastic Package ReelCSD17579Q3AT 7-Inch Reel 250Applications in Networking, Telecom, and
Computing Systems (1) For all available packages, see the orderable addendum atthe end of the data sheet.• Optimized for Control FET Applications
Absolute Maximum Ratings3 DescriptionTA = 25°C VALUE UNITThis 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mmVDS Drain-to-Source Voltage 30 VNexFET™ power MOSFET is designed to minimizeVGS Gate-to-Source Voltage ±20 Vlosses in power conversion applications.
Continuous Drain Current (Package limited) 20Top View Continuous Drain Current (Silicon limited),ID 39 ATC = 25°C
Continuous Drain Current(1) 11
IDM Pulsed Drain Current(2) 106 A
Power Dissipation(1) 3.2PD W
Power Dissipation, TC = 25°C 29
TJ, Operating Junction and –55 to 150 °CTstg Storage Temperature Range
Avalanche Energy, single pulseEAS 14 mJID = 17 A, L = 0.1 mH, RG = 25 Ω
(1) Typical RθJA = 50°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-.inch thick FR4 PCB.
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.
PARAMETER TEST CONDITIONS MIN TYP MAX UNITSTATIC CHARACTERISTICSBVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 30 VIDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 24 V 1 μAIGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nAVGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.1 1.5 1.9 V
VGS = 4.5 V, ID = 8 A 11.8 14.2 mΩRDS(on) Drain-to-Source On-Resistance
VGS = 10 V, ID = 8 A 8.7 10.2 mΩgƒs Transconductance VDS = 3 V, ID = 8 A 37 SDYNAMIC CHARACTERISTICSCiss Input Capacitance 768 998 pFCoss Output Capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 93 121 pFCrss Reverse Transfer Capacitance 38 49 pFRG Series Gate Resistance 1.9 3.8 ΩQg Gate Charge Total (4.5 V) 5.3 6.9
nCQg Gate Charge Total (10 V) 11.5 15.0Qgd Gate Charge Gate-to-Drain VDS = 15 V, ID = 8 A 1.2 nCQgs Gate Charge Gate-to-Source 2.2 nCQg(th) Gate Charge at Vth 1.1 nCQoss Output Charge VDS = 15 V, VGS = 0 V 3.0 nCtd(on) Turn On Delay Time 2 nstr Rise Time 5 nsVDS = 15 V, VGS = 10 V,
IDS = 8 A, RG = 0 Ωtd(off) Turn Off Delay Time 11 nstƒ Fall Time 1 nsDIODE CHARACTERISTICSVSD Diode Forward Voltage ISD = 8 A, VGS = 0 V 0.8 1.0 VQrr Reverse Recovery Charge 3.4 nCVDS= 15 V, IF = 8 A,
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s boarddesign.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6.1 TrademarksNexFET is a trademark of Texas Instruments.
6.2 Electrostatic Discharge CautionThese devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.
6.3 GlossarySLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
7 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.22. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm3. Material: black static-dissipative polystyrene4. All dimensions are in mm, unless otherwise specified.5. Thickness: 0.30 ±0.05 mm6. MSL1 260°C (IR and convection) PbF-reflow compatible
CSD17579Q3A ACTIVE VSONP DNH 8 2500 Green (RoHS& no Sb/Br)
CU SN Level-1-260C-UNLIM 17579
CSD17579Q3AT ACTIVE VSONP DNH 8 250 Green (RoHS& no Sb/Br)
CU SN Level-1-260C-UNLIM 17579
(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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